EP1756645A1 - Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir - Google Patents

Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir

Info

Publication number
EP1756645A1
EP1756645A1 EP05745043A EP05745043A EP1756645A1 EP 1756645 A1 EP1756645 A1 EP 1756645A1 EP 05745043 A EP05745043 A EP 05745043A EP 05745043 A EP05745043 A EP 05745043A EP 1756645 A1 EP1756645 A1 EP 1756645A1
Authority
EP
European Patent Office
Prior art keywords
sample
microstructured
light illumination
inspecting
transmitted light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05745043A
Other languages
German (de)
English (en)
Inventor
Uwe Graf
Lambert Danner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Tencor MIE GmbH
Original Assignee
Vistec Semiconductor Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vistec Semiconductor Systems GmbH filed Critical Vistec Semiconductor Systems GmbH
Publication of EP1756645A1 publication Critical patent/EP1756645A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00Microscopes
    • G02B21/06Means for illuminating specimens
    • G02B21/08Condensers
    • G02B21/088Condensers for both incident illumination and transillumination
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59Transmissivity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks

Definitions

  • the invention relates to an apparatus for the optical inspection of microstructured samples with a sample holder to which the sample can be applied for inspection, and to a method for the optical inspection of microstructured samples in which a sample holder is provided to which the sample is applied for inspection and an observation device, in particular a microscope, with which the sample is observed.
  • microstructured samples e.g. wafers
  • Masks or a microstructured component on a substrate are particularly suitable for optical devices.
  • the surface can be examined by evaluating rays which are retroreflected by the surface of the wafer.
  • Optical devices are also known which can recognize a wide variety of structures on the surface of the sample of a wafer by image recognition.
  • the sample is usually illuminated in the bright field and scanned with a camera, such as a matrix or line scan camera.
  • a camera such as a matrix or line scan camera.
  • US Pat. No. 6,587,193 it is also known to examine the surface of a wafer, an illumination being selected which scans the wafer in the form of a line.
  • the illumination line is guided over the surface of the wafer in such a way that a two-dimensional image can be generated.
  • a method and a device for examining a wafer is also known. Illumination is irradiated onto the wafer in such a way that an edge of the wafer is hit. The edge of the wafer can thus be detected and processed by an image processing unit. Wafers of the wafer can then be determined by comparing the edge image determined with a stored comparison image.
  • the known systems for inspecting wafers are designed almost exclusively for incident light inspection in the visual or UV range and for inspecting microstructured samples e.g. encapsulated or embedded objects or wafers structured on both sides as well as stack structures from several wafers are generally not suitable or not suitable.
  • the object of the present invention is to further develop the known sample inspection technique in such a way that it is also suitable for the inspection of encapsulated or embedded objects or wafers structured on both sides and stacked structures composed of several wafers.
  • this object is achieved by a device for inspecting microstructured samples with the features according to claim 1 and a method for inspecting microstructured samples with the features according to claim 9.
  • an inspection device in particular a microscope, which enables simultaneous or separate incident and transmitted light illumination of the samples in the IR and additionally offers visual incident light illumination.
  • the incident light illumination has an incident light source and a filter device for filtering radiation from the optical spectral range.
  • a light source that emits radiation with components from the infrared spectral range (IR) can be used as the illumination device for the transmitted light device.
  • the desired wavelength can be selected together with interchangeable filters for wavelength selection.
  • the light is preferably coupled into the system via a light guide. With this illumination, which is different in incident and transmitted light, it is possible to combine the advantages of IR illumination with those of visual incident light illumination.
  • transmitted light the sample only passes IR light at the locations that are transparent for it. This creates a very high-contrast image.
  • the simultaneous IR incident light illumination enables the display of objects that cannot be displayed in transmitted light due to the shading effect of metallization layers.
  • the result is a detailed, high-contrast image with structures that are not visible in the reflected light due to the lack of transparency of many layers.
  • the usual visual incident light image is available for orientation. Both pictures, i.e.
  • the combined incident / transmitted light IR image and the visual incident light image can be simultaneously displayed on an IR special camera and a normal visual color or B / W CC D camera via a wavelength-selective double TV outlet and on a computer on a monitor output: This functionality can be further improved by adjusting the light wavelengths used, in particular using exchangeable filters for incident and transmitted light illumination.
  • the device can be further improved by using switchable shutters in the beam path of the incident and transmitted light illumination.
  • the acquisition of the images of the samples takes place depending on the set wavelength with conventional lenses and tube lenses or with IR lenses, in particular with special, corresponding sample thicknesses.
  • the entire system can be automated, which is particularly advantageous for inline use in the production of wafers.
  • the images of the incident and transmitted light system can be combined with one another in such a way that they can be output together on an output device, in particular a monitor.
  • FIG. Schematically an overview of a wafer inspection device
  • the single figure shows schematically a characteristic structure according to the invention of a wafer inspection device 10, in particular a microscope for observing a wafer 28.
  • wafer inspection device 10 should not be construed as a limitation.
  • microstructured samples such as. B. wafers, masks or microstructured components (encapsulated or unencapsulated) on a substrate (usually a semiconductor substrate), are examined.
  • the wafer inspection device 10 has an incident light illumination device 50. This essentially consists of an incident light source 12, the light of which can be coupled directly or indirectly onto the wafer 28. For this purpose, the incident light beam 11 can be guided through a collector 14.
  • the light wavelength desired for illumination can be filtered out of the optical spectral range.
  • a switchable diaphragm 15 can be provided in order to select the part desired for illuminating the wafer 28 from the incident light beam 11.
  • About a divider 18 can the incident light beam is then directed onto the wafer 28, which is fixed in the substrate holder 26.
  • the light from the incident light source 12 can also be coupled directly, for example with the aid of an optical fiber.
  • the light reflected by the wafer 28 is captured with a conventional objective 22, which is provided on an objective turret 20, and fed to a CCD camera 44 via an exchangeable tube lens 40.
  • the image data generated in this way are processed in a computing unit, in particular a PC 46, and output with an output device, in particular a monitor 48.
  • a transmitted light illumination 52 is simultaneously provided according to the invention, with the aid of which the wafer can additionally be illuminated in transmitted light.
  • This transmitted light illumination 52 has a transmitted light source 38, a collector 36 and a filter device 34.
  • the Filterein device makes it possible to filter a desired IR spectral component from the light of the light source 38, which is to be used for the transmitted light illumination of the wafer.
  • An optical waveguide 32 for example in the form of an optical waveguide bundle, is preferably used to couple in the IR light.
  • the IR transmitted light After the IR transmitted light has passed through an intermediate optical system 33, it can be directed onto the wafer 28 via a splitter mirror 30.
  • a condenser which is combined with a switchable diaphragm, is usually arranged between the divider mirror 30 and the wafer 28.
  • the image can thus be fed to an IR camera 42 and the data generated thereby can be forwarded to a computing unit, for example the PC 46.
  • the data can in turn be processed and output via the monitor 48.
  • the wafer can be focused manually or automatically via an auto focus system, which makes a significant contribution to the complete automation of the entire examination process.
  • the data originating from the IR incident and transmitted light examination and the VIS incident light examination can be fed to a special, wavelength-selective TV double output 41, which, as shown, with a visual CCD camera and an IR Camera is equipped.
  • Both images can be processed in the PC 46 in such a way that they can be displayed either individually or as an overall image on the monitor 48. It is precisely the combination of the two imaging methods that makes it possible to structurally capture inner elements of the wafer or structures on the underside and to combine them with the data obtained from the visual incident light illumination. In this way, the monitoring of the production process of wafers or the other samples mentioned can be significantly increased.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

Pour l'analyse d'échantillons microstructurés, par exemple, d'une plaquette à semi-conducteurs (28), on utilise jusqu'à présent des dispositifs et des procédés d'analyse qui, pour la plupart, fonctionnent visuellement ou selon des processus en lumière réfléchie UV. En vue d'élargir les possibilités d'utilisation de ces dispositifs, à savoir, et en particulier, de représenter des détails de structure qui ne sont pas visibles en VIS ou en UV, par suite de la non-transparence des couches de recouvrement ou des matériaux intermédiaires, par exemple, des plaquettes structurées des deux côtés, on applique en lumière réfléchie, une lumière IR et on produit en même temps un éclairage en lumière transmise IR (52) qui offre, entre autre, une nette amélioration de contraste de l'image IR. De cette façon, l'échantillon peut être représenté en même temps en lumière réfléchie IR et/ou en lumière transmise ainsi qu'en lumière réfléchie VIS.
EP05745043A 2004-06-16 2005-05-23 Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir Withdrawn EP1756645A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004029212A DE102004029212B4 (de) 2004-06-16 2004-06-16 Vorrichtung und Verfahren zur optischen Auf- und/oder Durchlichtinspektion von Mikrostrukturen im IR
PCT/EP2005/052351 WO2005124422A1 (fr) 2004-06-16 2005-05-23 Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir

Publications (1)

Publication Number Publication Date
EP1756645A1 true EP1756645A1 (fr) 2007-02-28

Family

ID=34968027

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05745043A Withdrawn EP1756645A1 (fr) 2004-06-16 2005-05-23 Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir

Country Status (6)

Country Link
US (1) US8154718B2 (fr)
EP (1) EP1756645A1 (fr)
JP (1) JP2008502929A (fr)
CN (1) CN101019061A (fr)
DE (1) DE102004029212B4 (fr)
WO (1) WO2005124422A1 (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878907B2 (ja) * 2006-05-08 2012-02-15 三菱電機株式会社 画像検査装置およびこの画像検査装置を用いた画像検査方法
GB0611156D0 (en) * 2006-06-07 2006-07-19 Qinetiq Ltd Optical inspection
KR20080015363A (ko) 2006-08-14 2008-02-19 야마하 가부시키가이샤 웨이퍼 및 반도체 소자의 검사 방법 및 장치
DE102006056086B3 (de) * 2006-11-28 2008-01-10 Rmb Gmbh Maschinen-Und Anlagenbau Verfahren und Vorrichtung zur optischen Analyse von Körpern aus Silizium
DE102007006525B4 (de) * 2007-02-06 2009-05-14 Basler Ag Verfahren und Vorrichtung zur Detektierung von Defekten
ES2376394T3 (es) * 2007-08-31 2012-03-13 Icos Vision Systems Nv Aparato y procedimiento para detectar anomal�?as de un sustrato semiconductor.
DE102008028869A1 (de) * 2008-06-19 2009-12-24 Vistec Semiconductor Systems Gmbh Verfahren und Vorrichtung zur Inspektion eines scheibenförmigen Gegenstandes
WO2011017772A1 (fr) * 2009-08-14 2011-02-17 Bt Imaging Pty Ltd Détection de discontinuités dans des matériaux semi-conducteurs
US8492721B2 (en) * 2009-10-15 2013-07-23 Camtek Ltd. Systems and methods for near infra-red optical inspection
CN102156106A (zh) * 2010-02-11 2011-08-17 致茂电子(苏州)有限公司 太阳能晶圆快速检测系统
US9389408B2 (en) * 2010-07-23 2016-07-12 Zeta Instruments, Inc. 3D microscope and methods of measuring patterned substrates
JP5646922B2 (ja) * 2010-09-03 2014-12-24 株式会社トプコン 検査装置
JP5824984B2 (ja) * 2011-09-06 2015-12-02 株式会社島津製作所 太陽電池セル検査装置
WO2013063316A1 (fr) 2011-10-25 2013-05-02 Daylight Solutions, Inc. Microscope d'imagerie infrarouge
US9322786B2 (en) * 2012-02-10 2016-04-26 Shimadzu Corporation Solar cell inspection apparatus and solar cell processing apparatus
JP5867194B2 (ja) * 2012-03-13 2016-02-24 株式会社島津製作所 顕微鏡
US8902428B2 (en) * 2012-03-15 2014-12-02 Applied Materials, Inc. Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers
US9885671B2 (en) 2014-06-09 2018-02-06 Kla-Tencor Corporation Miniaturized imaging apparatus for wafer edge
US9645097B2 (en) 2014-06-20 2017-05-09 Kla-Tencor Corporation In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning
CN104267015B (zh) * 2014-07-09 2017-01-18 香港应用科技研究院有限公司 用于生理检测的光信号检测装置及分析样本成分的方法
KR20220103201A (ko) 2014-12-05 2022-07-21 케이엘에이 코포레이션 워크 피스들에서의 결함 검출을 위한 장치, 방법 및 컴퓨터 프로그램 제품
CN104538326A (zh) * 2014-12-16 2015-04-22 苏州凯锝微电子有限公司 一种晶圆切割切口检测装置
CN104568962A (zh) * 2014-12-16 2015-04-29 苏州凯锝微电子有限公司 一种晶圆切割切口检测设备
US9588058B1 (en) * 2015-12-29 2017-03-07 Lawrence Livermore National Security, Llc Non-destructive evaluation of water ingress in photovoltaic modules
KR20180077781A (ko) * 2016-12-29 2018-07-09 에이치피프린팅코리아 주식회사 화상독취장치 및 화상독취방법
US20180311762A1 (en) * 2017-04-26 2018-11-01 Asm Technology Singapore Pte Ltd Substrate cutting control and inspection
DE102018129832B4 (de) * 2017-12-04 2020-08-27 Leica Microsystems Cms Gmbh Mikroskopsystem und Verfahren zur mikroskopischen Abbildung
IL264937B (en) * 2018-02-25 2022-09-01 Orbotech Ltd Range differences for self-focusing in optical imaging systems
CN109557074A (zh) * 2019-01-10 2019-04-02 华东师范大学 一种拉曼高光谱图像的采集方法
US11340284B2 (en) * 2019-07-23 2022-05-24 Kla Corporation Combined transmitted and reflected light imaging of internal cracks in semiconductor devices
CN111564382A (zh) * 2020-04-08 2020-08-21 中国科学院微电子研究所 晶圆检测装置及检测方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524566Y2 (fr) * 1975-10-28 1980-06-12
JPH0662305B2 (ja) * 1983-12-29 1994-08-17 オ−ストラリア国 テクネチウム−99m−標識放射医薬の製造
DE3511571C1 (de) * 1985-03-12 1986-09-25 C. Reichert Optische Werke Ag, Wien Infrarotmikroskop
JPH0360055U (fr) * 1989-10-17 1991-06-13
EP0455857A1 (fr) * 1990-05-11 1991-11-13 Diffracto Limited Appareil et procédés améliorés d'inspection de surface et de mesure des distortions de manière rétroréflective
DE69124288T2 (de) * 1990-05-30 1997-05-07 Dainippon Screen Mfg Verfahren zum Lesen einer optischen Abbildung einer untersuchten Oberfläche und dafür einsetzbare Bildleseeinrichtung
EP0770848A1 (fr) * 1991-05-14 1997-05-02 Kabushiki Kaisha Topcon Appareil de projection-inspection
JPH0714898A (ja) * 1993-06-23 1995-01-17 Mitsubishi Electric Corp 半導体ウエハの試験解析装置および解析方法
JPH11264935A (ja) * 1998-03-18 1999-09-28 Jeol Ltd 顕微赤外装置
DE19903486C2 (de) * 1999-01-29 2003-03-06 Leica Microsystems Verfahren und Vorrichtung zur optischen Untersuchung von strukturierten Oberflächen von Objekten
US6587193B1 (en) * 1999-05-11 2003-07-01 Applied Materials, Inc. Inspection systems performing two-dimensional imaging with line light spot
US6734962B2 (en) * 2000-10-13 2004-05-11 Chemimage Corporation Near infrared chemical imaging microscope
JP4481397B2 (ja) * 1999-09-07 2010-06-16 オリンパス株式会社 光学装置及び顕微鏡
US20010030744A1 (en) * 1999-12-27 2001-10-18 Og Technologies, Inc. Method of simultaneously applying multiple illumination schemes for simultaneous image acquisition in an imaging system
DE10019486A1 (de) * 2000-04-19 2001-10-31 Siemens Ag Anordnung zur Inspektion von Objektoberflächen
JP2002075815A (ja) * 2000-08-23 2002-03-15 Sony Corp パターン検査装置及びこれを用いた露光装置制御システム
CN1260800C (zh) * 2001-09-19 2006-06-21 奥林巴斯光学工业株式会社 半导体晶片检查设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2005124422A1 *

Also Published As

Publication number Publication date
US20070247618A1 (en) 2007-10-25
DE102004029212A1 (de) 2006-01-12
DE102004029212B4 (de) 2006-07-13
CN101019061A (zh) 2007-08-15
WO2005124422A1 (fr) 2005-12-29
JP2008502929A (ja) 2008-01-31
US8154718B2 (en) 2012-04-10

Similar Documents

Publication Publication Date Title
WO2005124422A1 (fr) Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir
EP2335556B1 (fr) Dispositif de contrôle d'un système d'analyse optique
EP0116321B1 (fr) Spectromètre infrarouge
DE102004029012B4 (de) Verfahren zur Inspektion eines Wafers
EP1669741A1 (fr) procédé et système pour l'inspection de Plaquettes
DE19916749B4 (de) Verfahren zur Untersuchung von Proben
DE19903486A1 (de) Verfahren und Vorrichtung zur optischen Untersuchung von strukturierten Oberflächen von Objekten
EP3410091B1 (fr) Procédé de détection d'une fonction de transfert de modulation et d'un centrage d'un système optique
DE2437984A1 (de) Verfahren zur beobachtung dynamischer vorgaenge in lebenden objekten, die mangels genuegender optischer aufloesung lichtoptisch nicht mehr sichtbar sind, sowie geraet zur durchfuehrung des verfahrens
DE102016011497A1 (de) Optische Untersuchungseinrichtung und optisches Untersuchungsverfahren mit sichtbarem und infrarotem Licht für Halbleiterbauteile
EP2335555A1 (fr) Procédé de contrôle d'un dispositif optique
DE102018129833B4 (de) Mikroskopsystem, Detektionseinheit für Mikroskopsystem und Verfahren zur mikroskopischen Abbildung einer Probe
DE102017210274A1 (de) Mikroskopiesystem und Mikroskopieverfahren zur Aufnahme von Fluoreszenzlichtbildern und Weißlichtbildern
EP1505424A1 (fr) Microscope à balayage avec un moyen de couplage optique pour lumière externe
DE3623394C2 (de) Operationsmikroskop
WO2019011627A1 (fr) Appareil de contrôle de dureté par indentation
DE102008028869A1 (de) Verfahren und Vorrichtung zur Inspektion eines scheibenförmigen Gegenstandes
DE202009011701U1 (de) Vorrichtung zum optischen Abtasten von Proben, mit einer Streuscheibe vor einem Durchlicht-Detektor
DE102007047935A1 (de) Vorrichtung und Verfahren zur Inspektion von Defekten am Randbereich eines Wafers und Verwendung der Vorrichtung in einer Inspektionseinrichtung für Wafer
DE10323139A1 (de) Verfahren und Vorrichtung zum Hochauflösenden Fehlerfinden und Klassifizieren
WO2017036893A1 (fr) Dispositif de prise de vue, appareil d'observation optique et procédé d'acquisition d'images
WO2012159752A2 (fr) Système de microscopie pour examen ophtalmologique et procédé permettant de faire fonctionner un système de microscopie
WO2005031427A1 (fr) Procede d'examen d'echantillon et microscope a eclairage evanescent de l'echantillon
DE102016205707A1 (de) Reinigungseinrichtung und optische Anordnung zur Prüfung und Reinigung von Systemen, Modulen und komplexen Geometrien
EP1373961B1 (fr) Ensemble objectif de microscope

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20061107

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: VISTEC SEMICONDUCTOR SYSTEMS GMBH

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20080226

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20080328