EP1756645A1 - Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir - Google Patents
Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en irInfo
- Publication number
- EP1756645A1 EP1756645A1 EP05745043A EP05745043A EP1756645A1 EP 1756645 A1 EP1756645 A1 EP 1756645A1 EP 05745043 A EP05745043 A EP 05745043A EP 05745043 A EP05745043 A EP 05745043A EP 1756645 A1 EP1756645 A1 EP 1756645A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- sample
- microstructured
- light illumination
- inspecting
- transmitted light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000005286 illumination Methods 0.000 claims description 39
- 238000007689 inspection Methods 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 11
- 230000000007 visual effect Effects 0.000 claims description 10
- 230000003595 spectral effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 3
- 239000013307 optical fiber Substances 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 43
- 238000000576 coating method Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/06—Means for illuminating specimens
- G02B21/08—Condensers
- G02B21/088—Condensers for both incident illumination and transillumination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
Definitions
- the invention relates to an apparatus for the optical inspection of microstructured samples with a sample holder to which the sample can be applied for inspection, and to a method for the optical inspection of microstructured samples in which a sample holder is provided to which the sample is applied for inspection and an observation device, in particular a microscope, with which the sample is observed.
- microstructured samples e.g. wafers
- Masks or a microstructured component on a substrate are particularly suitable for optical devices.
- the surface can be examined by evaluating rays which are retroreflected by the surface of the wafer.
- Optical devices are also known which can recognize a wide variety of structures on the surface of the sample of a wafer by image recognition.
- the sample is usually illuminated in the bright field and scanned with a camera, such as a matrix or line scan camera.
- a camera such as a matrix or line scan camera.
- US Pat. No. 6,587,193 it is also known to examine the surface of a wafer, an illumination being selected which scans the wafer in the form of a line.
- the illumination line is guided over the surface of the wafer in such a way that a two-dimensional image can be generated.
- a method and a device for examining a wafer is also known. Illumination is irradiated onto the wafer in such a way that an edge of the wafer is hit. The edge of the wafer can thus be detected and processed by an image processing unit. Wafers of the wafer can then be determined by comparing the edge image determined with a stored comparison image.
- the known systems for inspecting wafers are designed almost exclusively for incident light inspection in the visual or UV range and for inspecting microstructured samples e.g. encapsulated or embedded objects or wafers structured on both sides as well as stack structures from several wafers are generally not suitable or not suitable.
- the object of the present invention is to further develop the known sample inspection technique in such a way that it is also suitable for the inspection of encapsulated or embedded objects or wafers structured on both sides and stacked structures composed of several wafers.
- this object is achieved by a device for inspecting microstructured samples with the features according to claim 1 and a method for inspecting microstructured samples with the features according to claim 9.
- an inspection device in particular a microscope, which enables simultaneous or separate incident and transmitted light illumination of the samples in the IR and additionally offers visual incident light illumination.
- the incident light illumination has an incident light source and a filter device for filtering radiation from the optical spectral range.
- a light source that emits radiation with components from the infrared spectral range (IR) can be used as the illumination device for the transmitted light device.
- the desired wavelength can be selected together with interchangeable filters for wavelength selection.
- the light is preferably coupled into the system via a light guide. With this illumination, which is different in incident and transmitted light, it is possible to combine the advantages of IR illumination with those of visual incident light illumination.
- transmitted light the sample only passes IR light at the locations that are transparent for it. This creates a very high-contrast image.
- the simultaneous IR incident light illumination enables the display of objects that cannot be displayed in transmitted light due to the shading effect of metallization layers.
- the result is a detailed, high-contrast image with structures that are not visible in the reflected light due to the lack of transparency of many layers.
- the usual visual incident light image is available for orientation. Both pictures, i.e.
- the combined incident / transmitted light IR image and the visual incident light image can be simultaneously displayed on an IR special camera and a normal visual color or B / W CC D camera via a wavelength-selective double TV outlet and on a computer on a monitor output: This functionality can be further improved by adjusting the light wavelengths used, in particular using exchangeable filters for incident and transmitted light illumination.
- the device can be further improved by using switchable shutters in the beam path of the incident and transmitted light illumination.
- the acquisition of the images of the samples takes place depending on the set wavelength with conventional lenses and tube lenses or with IR lenses, in particular with special, corresponding sample thicknesses.
- the entire system can be automated, which is particularly advantageous for inline use in the production of wafers.
- the images of the incident and transmitted light system can be combined with one another in such a way that they can be output together on an output device, in particular a monitor.
- FIG. Schematically an overview of a wafer inspection device
- the single figure shows schematically a characteristic structure according to the invention of a wafer inspection device 10, in particular a microscope for observing a wafer 28.
- wafer inspection device 10 should not be construed as a limitation.
- microstructured samples such as. B. wafers, masks or microstructured components (encapsulated or unencapsulated) on a substrate (usually a semiconductor substrate), are examined.
- the wafer inspection device 10 has an incident light illumination device 50. This essentially consists of an incident light source 12, the light of which can be coupled directly or indirectly onto the wafer 28. For this purpose, the incident light beam 11 can be guided through a collector 14.
- the light wavelength desired for illumination can be filtered out of the optical spectral range.
- a switchable diaphragm 15 can be provided in order to select the part desired for illuminating the wafer 28 from the incident light beam 11.
- About a divider 18 can the incident light beam is then directed onto the wafer 28, which is fixed in the substrate holder 26.
- the light from the incident light source 12 can also be coupled directly, for example with the aid of an optical fiber.
- the light reflected by the wafer 28 is captured with a conventional objective 22, which is provided on an objective turret 20, and fed to a CCD camera 44 via an exchangeable tube lens 40.
- the image data generated in this way are processed in a computing unit, in particular a PC 46, and output with an output device, in particular a monitor 48.
- a transmitted light illumination 52 is simultaneously provided according to the invention, with the aid of which the wafer can additionally be illuminated in transmitted light.
- This transmitted light illumination 52 has a transmitted light source 38, a collector 36 and a filter device 34.
- the Filterein device makes it possible to filter a desired IR spectral component from the light of the light source 38, which is to be used for the transmitted light illumination of the wafer.
- An optical waveguide 32 for example in the form of an optical waveguide bundle, is preferably used to couple in the IR light.
- the IR transmitted light After the IR transmitted light has passed through an intermediate optical system 33, it can be directed onto the wafer 28 via a splitter mirror 30.
- a condenser which is combined with a switchable diaphragm, is usually arranged between the divider mirror 30 and the wafer 28.
- the image can thus be fed to an IR camera 42 and the data generated thereby can be forwarded to a computing unit, for example the PC 46.
- the data can in turn be processed and output via the monitor 48.
- the wafer can be focused manually or automatically via an auto focus system, which makes a significant contribution to the complete automation of the entire examination process.
- the data originating from the IR incident and transmitted light examination and the VIS incident light examination can be fed to a special, wavelength-selective TV double output 41, which, as shown, with a visual CCD camera and an IR Camera is equipped.
- Both images can be processed in the PC 46 in such a way that they can be displayed either individually or as an overall image on the monitor 48. It is precisely the combination of the two imaging methods that makes it possible to structurally capture inner elements of the wafer or structures on the underside and to combine them with the data obtained from the visual incident light illumination. In this way, the monitoring of the production process of wafers or the other samples mentioned can be significantly increased.
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optics & Photonics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Microscoopes, Condenser (AREA)
Abstract
Pour l'analyse d'échantillons microstructurés, par exemple, d'une plaquette à semi-conducteurs (28), on utilise jusqu'à présent des dispositifs et des procédés d'analyse qui, pour la plupart, fonctionnent visuellement ou selon des processus en lumière réfléchie UV. En vue d'élargir les possibilités d'utilisation de ces dispositifs, à savoir, et en particulier, de représenter des détails de structure qui ne sont pas visibles en VIS ou en UV, par suite de la non-transparence des couches de recouvrement ou des matériaux intermédiaires, par exemple, des plaquettes structurées des deux côtés, on applique en lumière réfléchie, une lumière IR et on produit en même temps un éclairage en lumière transmise IR (52) qui offre, entre autre, une nette amélioration de contraste de l'image IR. De cette façon, l'échantillon peut être représenté en même temps en lumière réfléchie IR et/ou en lumière transmise ainsi qu'en lumière réfléchie VIS.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004029212A DE102004029212B4 (de) | 2004-06-16 | 2004-06-16 | Vorrichtung und Verfahren zur optischen Auf- und/oder Durchlichtinspektion von Mikrostrukturen im IR |
PCT/EP2005/052351 WO2005124422A1 (fr) | 2004-06-16 | 2005-05-23 | Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1756645A1 true EP1756645A1 (fr) | 2007-02-28 |
Family
ID=34968027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05745043A Withdrawn EP1756645A1 (fr) | 2004-06-16 | 2005-05-23 | Dispositif et procede d'inspection optique en lumiere reflechie et/ou en lumiere transmise de microstructures en ir |
Country Status (6)
Country | Link |
---|---|
US (1) | US8154718B2 (fr) |
EP (1) | EP1756645A1 (fr) |
JP (1) | JP2008502929A (fr) |
CN (1) | CN101019061A (fr) |
DE (1) | DE102004029212B4 (fr) |
WO (1) | WO2005124422A1 (fr) |
Families Citing this family (31)
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JP4878907B2 (ja) * | 2006-05-08 | 2012-02-15 | 三菱電機株式会社 | 画像検査装置およびこの画像検査装置を用いた画像検査方法 |
GB0611156D0 (en) * | 2006-06-07 | 2006-07-19 | Qinetiq Ltd | Optical inspection |
KR20080015363A (ko) | 2006-08-14 | 2008-02-19 | 야마하 가부시키가이샤 | 웨이퍼 및 반도체 소자의 검사 방법 및 장치 |
DE102006056086B3 (de) * | 2006-11-28 | 2008-01-10 | Rmb Gmbh Maschinen-Und Anlagenbau | Verfahren und Vorrichtung zur optischen Analyse von Körpern aus Silizium |
DE102007006525B4 (de) * | 2007-02-06 | 2009-05-14 | Basler Ag | Verfahren und Vorrichtung zur Detektierung von Defekten |
ES2376394T3 (es) * | 2007-08-31 | 2012-03-13 | Icos Vision Systems Nv | Aparato y procedimiento para detectar anomal�?as de un sustrato semiconductor. |
DE102008028869A1 (de) * | 2008-06-19 | 2009-12-24 | Vistec Semiconductor Systems Gmbh | Verfahren und Vorrichtung zur Inspektion eines scheibenförmigen Gegenstandes |
WO2011017772A1 (fr) * | 2009-08-14 | 2011-02-17 | Bt Imaging Pty Ltd | Détection de discontinuités dans des matériaux semi-conducteurs |
US8492721B2 (en) * | 2009-10-15 | 2013-07-23 | Camtek Ltd. | Systems and methods for near infra-red optical inspection |
CN102156106A (zh) * | 2010-02-11 | 2011-08-17 | 致茂电子(苏州)有限公司 | 太阳能晶圆快速检测系统 |
US9389408B2 (en) * | 2010-07-23 | 2016-07-12 | Zeta Instruments, Inc. | 3D microscope and methods of measuring patterned substrates |
JP5646922B2 (ja) * | 2010-09-03 | 2014-12-24 | 株式会社トプコン | 検査装置 |
JP5824984B2 (ja) * | 2011-09-06 | 2015-12-02 | 株式会社島津製作所 | 太陽電池セル検査装置 |
WO2013063316A1 (fr) | 2011-10-25 | 2013-05-02 | Daylight Solutions, Inc. | Microscope d'imagerie infrarouge |
US9322786B2 (en) * | 2012-02-10 | 2016-04-26 | Shimadzu Corporation | Solar cell inspection apparatus and solar cell processing apparatus |
JP5867194B2 (ja) * | 2012-03-13 | 2016-02-24 | 株式会社島津製作所 | 顕微鏡 |
US8902428B2 (en) * | 2012-03-15 | 2014-12-02 | Applied Materials, Inc. | Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers |
US9885671B2 (en) | 2014-06-09 | 2018-02-06 | Kla-Tencor Corporation | Miniaturized imaging apparatus for wafer edge |
US9645097B2 (en) | 2014-06-20 | 2017-05-09 | Kla-Tencor Corporation | In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning |
CN104267015B (zh) * | 2014-07-09 | 2017-01-18 | 香港应用科技研究院有限公司 | 用于生理检测的光信号检测装置及分析样本成分的方法 |
KR20220103201A (ko) | 2014-12-05 | 2022-07-21 | 케이엘에이 코포레이션 | 워크 피스들에서의 결함 검출을 위한 장치, 방법 및 컴퓨터 프로그램 제품 |
CN104538326A (zh) * | 2014-12-16 | 2015-04-22 | 苏州凯锝微电子有限公司 | 一种晶圆切割切口检测装置 |
CN104568962A (zh) * | 2014-12-16 | 2015-04-29 | 苏州凯锝微电子有限公司 | 一种晶圆切割切口检测设备 |
US9588058B1 (en) * | 2015-12-29 | 2017-03-07 | Lawrence Livermore National Security, Llc | Non-destructive evaluation of water ingress in photovoltaic modules |
KR20180077781A (ko) * | 2016-12-29 | 2018-07-09 | 에이치피프린팅코리아 주식회사 | 화상독취장치 및 화상독취방법 |
US20180311762A1 (en) * | 2017-04-26 | 2018-11-01 | Asm Technology Singapore Pte Ltd | Substrate cutting control and inspection |
DE102018129832B4 (de) * | 2017-12-04 | 2020-08-27 | Leica Microsystems Cms Gmbh | Mikroskopsystem und Verfahren zur mikroskopischen Abbildung |
IL264937B (en) * | 2018-02-25 | 2022-09-01 | Orbotech Ltd | Range differences for self-focusing in optical imaging systems |
CN109557074A (zh) * | 2019-01-10 | 2019-04-02 | 华东师范大学 | 一种拉曼高光谱图像的采集方法 |
US11340284B2 (en) * | 2019-07-23 | 2022-05-24 | Kla Corporation | Combined transmitted and reflected light imaging of internal cracks in semiconductor devices |
CN111564382A (zh) * | 2020-04-08 | 2020-08-21 | 中国科学院微电子研究所 | 晶圆检测装置及检测方法 |
Family Cites Families (17)
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JPS5524566Y2 (fr) * | 1975-10-28 | 1980-06-12 | ||
JPH0662305B2 (ja) * | 1983-12-29 | 1994-08-17 | オ−ストラリア国 | テクネチウム−99m−標識放射医薬の製造 |
DE3511571C1 (de) * | 1985-03-12 | 1986-09-25 | C. Reichert Optische Werke Ag, Wien | Infrarotmikroskop |
JPH0360055U (fr) * | 1989-10-17 | 1991-06-13 | ||
EP0455857A1 (fr) * | 1990-05-11 | 1991-11-13 | Diffracto Limited | Appareil et procédés améliorés d'inspection de surface et de mesure des distortions de manière rétroréflective |
DE69124288T2 (de) * | 1990-05-30 | 1997-05-07 | Dainippon Screen Mfg | Verfahren zum Lesen einer optischen Abbildung einer untersuchten Oberfläche und dafür einsetzbare Bildleseeinrichtung |
EP0770848A1 (fr) * | 1991-05-14 | 1997-05-02 | Kabushiki Kaisha Topcon | Appareil de projection-inspection |
JPH0714898A (ja) * | 1993-06-23 | 1995-01-17 | Mitsubishi Electric Corp | 半導体ウエハの試験解析装置および解析方法 |
JPH11264935A (ja) * | 1998-03-18 | 1999-09-28 | Jeol Ltd | 顕微赤外装置 |
DE19903486C2 (de) * | 1999-01-29 | 2003-03-06 | Leica Microsystems | Verfahren und Vorrichtung zur optischen Untersuchung von strukturierten Oberflächen von Objekten |
US6587193B1 (en) * | 1999-05-11 | 2003-07-01 | Applied Materials, Inc. | Inspection systems performing two-dimensional imaging with line light spot |
US6734962B2 (en) * | 2000-10-13 | 2004-05-11 | Chemimage Corporation | Near infrared chemical imaging microscope |
JP4481397B2 (ja) * | 1999-09-07 | 2010-06-16 | オリンパス株式会社 | 光学装置及び顕微鏡 |
US20010030744A1 (en) * | 1999-12-27 | 2001-10-18 | Og Technologies, Inc. | Method of simultaneously applying multiple illumination schemes for simultaneous image acquisition in an imaging system |
DE10019486A1 (de) * | 2000-04-19 | 2001-10-31 | Siemens Ag | Anordnung zur Inspektion von Objektoberflächen |
JP2002075815A (ja) * | 2000-08-23 | 2002-03-15 | Sony Corp | パターン検査装置及びこれを用いた露光装置制御システム |
CN1260800C (zh) * | 2001-09-19 | 2006-06-21 | 奥林巴斯光学工业株式会社 | 半导体晶片检查设备 |
-
2004
- 2004-06-16 DE DE102004029212A patent/DE102004029212B4/de not_active Expired - Fee Related
-
2005
- 2005-05-23 EP EP05745043A patent/EP1756645A1/fr not_active Withdrawn
- 2005-05-23 JP JP2007515921A patent/JP2008502929A/ja active Pending
- 2005-05-23 US US11/568,949 patent/US8154718B2/en not_active Expired - Fee Related
- 2005-05-23 WO PCT/EP2005/052351 patent/WO2005124422A1/fr not_active Application Discontinuation
- 2005-05-23 CN CN200580017989.6A patent/CN101019061A/zh active Pending
Non-Patent Citations (1)
Title |
---|
See references of WO2005124422A1 * |
Also Published As
Publication number | Publication date |
---|---|
US20070247618A1 (en) | 2007-10-25 |
DE102004029212A1 (de) | 2006-01-12 |
DE102004029212B4 (de) | 2006-07-13 |
CN101019061A (zh) | 2007-08-15 |
WO2005124422A1 (fr) | 2005-12-29 |
JP2008502929A (ja) | 2008-01-31 |
US8154718B2 (en) | 2012-04-10 |
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