EP1594651A1 - Dispositif et procede pour traiter au laser des substrats de commutation electrique - Google Patents

Dispositif et procede pour traiter au laser des substrats de commutation electrique

Info

Publication number
EP1594651A1
EP1594651A1 EP03785671A EP03785671A EP1594651A1 EP 1594651 A1 EP1594651 A1 EP 1594651A1 EP 03785671 A EP03785671 A EP 03785671A EP 03785671 A EP03785671 A EP 03785671A EP 1594651 A1 EP1594651 A1 EP 1594651A1
Authority
EP
European Patent Office
Prior art keywords
laser
khz
laser power
average
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03785671A
Other languages
German (de)
English (en)
Inventor
Eddy Roelants
Stefan Lesjak
Sebastien Edme
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Via Mechanics Ltd
Original Assignee
Siemens AG
Hitachi Via Mechanics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Hitachi Via Mechanics Ltd filed Critical Siemens AG
Publication of EP1594651A1 publication Critical patent/EP1594651A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks

Definitions

  • the invention relates to an apparatus and a method for processing electrical circuit substrates
  • a workpiece holder for holding and positioning the substrate, a laser source with a diode-pumped, quality-controlled, pulsed solid-state laser,
  • EP 931 439 B1 discloses a method for forming at least two wiring levels on electrically insulating substrates, a laser, preferably an incad-YAG laser, being used both for drilling blind holes and for structuring conductor tracks.
  • a laser preferably an Arthurd-YAG laser
  • either the metal layer itself can be structured directly by the laser by partial ablation, or it is also possible to partially ablate an etching resist layer lying on the metal layer with the laser and then to etch away the area of the metal layer that is thereby exposed.
  • EP 1 115 031 A2 proposes using, for example, a titanium sapphire laser with repetition rates of more than 80 MHz, which generates a quasi-continuous UV laser beam.
  • the aim of the present invention is to provide a laser system and a corresponding laser processing method, which enables substrates to be processed using a wide variety of laser methods without costly additional investments and expensive retrofitting.
  • this aim is achieved with a device for processing electrical circuit substrates with a workpiece holder for holding and positioning the substrate, a laser source with a diode-pumped, quality-controlled, pulsed solid-state laser with a wavelength between 266 and 1064 nm, which is able to emit laser radiation in the following value ranges : - a pulse repetition frequency between 1 kHz and 1 MHz, - a pulse length of 30 ns to 200 ns and
  • an imaging unit and - a controller that is able to use the laser with different combinations depending on the application operate from medium laser power and repetition frequencies.
  • the inventive selection of the laser with a hitherto unknown spectrum of characteristic values and a controller that is able to set a predetermined combination of characteristic data for the type of substrate processing provided in each case makes it possible to carry out all laser processing steps occurring for printed circuit board processing, such as Boh - Removal of metal layers or of etch resist layers up to the mere exposure of photosensitive varnishes with a single laser source.
  • the effort for the provision of production facilities and for the changeover between different production steps is correspondingly simplified.
  • the device according to the invention is preferably operated with a laser with a wavelength between 350 and 550 nm, in particular with a UV laser with a 355 nm wavelength.
  • the laser can thus have a first operating mode for removing layers, in which it is operated with an average laser power of approximately 1 to 2 W and a repetition frequency of approximately 60 to 80 kHz. It should be noted that the somewhat higher laser power and the somewhat lower repetition frequency for structuring metallic layers, for example, and the somewhat lower laser power of approximately 1 W with the somewhat higher repetition frequency of 80 kHz for the removal of non-metallic layers, such as solder resist. is combined.
  • the laser In a second operating mode for drilling holes in metallic and dielectric layers of the circuit substrate, the laser can, for example, be set to an average laser power of 3 to 4 W and a repetition frequency of 10 to 30 kHz.
  • the laser is set to a significantly lower laser power in the order of about 100 mW at a repetition frequency of 200 kHz to 1 MHz.
  • a galvanometer mirror unit expediently serves as the deflection unit, which enables the high deflection speeds of typically 300 to 600 mm / s. With a suitable combination of laser power and spot diameter, a significantly higher deflection speed can also be used. At these speeds, the laser beam is moved essentially linearly when structuring layers, while circular movements are carried out in a known manner during drilling.
  • a method for processing an electrical circuit substrate wherein a laser with a wavelength between approximately 266 and approximately 1064 nm, a pulse repetition rate between 1 kHz and 1 MHz, a pulse length between 30 ns and 200 ns and an average laser power between approximately 0.1 W and approx. 5 W is used, has the following steps:
  • the substrate is fixed and positioned on a workpiece holder -
  • the laser beam is set to one of the following operating modes via a control unit: a) Drilling holes with an average laser power of 3 to 5 W, a repetition frequency of about 10 to 30 kHz. and a pulse length of approximately 30 to 50 ns, b) structuring of metallic or dielectric
  • the photosensitive layer exposed in operating mode c) is developed in a further step, and then the unexposed areas of the layer are removed.
  • FIG. 1 shows the schematic structure of a laser processing device designed according to the invention with a substrate provided for drilling holes
  • FIG. 2 shows a schematically illustrated substrate in which an etching resist layer is structured with the laser beam and the exposed pattern is subsequently etched
  • FIG. 3 shows a schematically shown substrate, in which a metallic surface layer is structured directly with the laser beam
  • FIG. 4 shows a schematically illustrated substrate, in which a photosensitive layer applied to a metal layer is exposed with the laser
  • FIG. 5 shows a substrate in plan view, in which, according to FIG. 4, a track is exposed with a laser and then washed out.
  • FIG. 1 the structure of a laser processing device is shown schematically.
  • the centerpiece is a laser 1, which is designed as a diode-pumped, quality-controlled, pulsed solid-state laser for the purposes of the invention.
  • the laser beam 2 emanating from this laser source is preferably emitted via a deflection unit 3 with two galvo mirrors 31 and 32 and one Imaging unit 4 formed by a lens is fed to a substrate 10 which is arranged on a receiving device 5, primarily a positioning table which can be adjusted in all directions.
  • a control unit 6 is used to control the device, which controls both the laser 1 and the “deflection unit 3 and the receiving device 5 in accordance with the desired processing.
  • the workpiece namely the substrate
  • the holding device 5 that is to say the positioning table
  • a certain field of the substrate intended for processing reaches the effective range of the laser beam 2 (X - Y positioning).
  • the substrate is held in the set position during laser processing, since the movements on the field to be processed are carried out by deflecting the laser beam via the deflection unit 3.
  • the deflection via galvo mirrors enables much higher speeds to be achieved than by adjusting the positioning table 5, which has a relatively large mass.
  • the deflection of the laser beam 2 on the field of the substrate 10 to be processed is therefore carried out by the control unit 6 via the galvo mirrors 31 and 32.
  • programs are stored in the control device with which the laser 1 is set to specific combinations of performance data for the respective application purposes.
  • the substrate has a central dielectric layer 11 and a metallic layer 12 and 13 on the top and bottom, respectively.
  • a blind hole 14 is drilled through the metallic layer 12 and the dielectric layer 11
  • the laser is set so that it emits an average laser power of, for example, 3.5 to 4 W at a repetition frequency of 10 to 30 kHz and a pulse length of 30 to 50 ns.
  • the laser itself is preferably a UV laser with a wavelength of 355 nm.
  • a laser with a wavelength of 532 nm could also be used.
  • the laser is now set to the specified power for the drilling mode, the required holes 14 are drilled in the substrate 10, the laser beam, for example, having to perform a certain number of circular movements in order to on the one hand the metallic layer 12 and on the other hand the dielectric layer 11 in the desired borehole.
  • an etching resist layer 15 can first be applied to the metal layer 12, which is removed with the laser in a predetermined pattern in regions 15a, so that in these areas, the metal layer 12 is exposed and can then be etched off.
  • the laser beam which is referred to in this figure as 2-2, is adjusted via the control unit so that it has, for example, an average laser power of approximately 1 W at a repetition frequency of 80 kHz and a pulse length of 60 ns for removing the etching resist , These values are only examples, since the exact setting depends on the layer to be removed, its nature, its thickness and the like.
  • FIG. 3 shows, for example, how a metal layer 12 is structured, ie partially removed, using a laser beam 2-3 directly according to a predetermined conductor pattern.
  • the metallic layer 12 therefore only remains where conductor tracks are desired, while the dielectric layer 11 is exposed in the regions 12a.
  • the laser beam 2-3 is tion set so that it has, for example, an average power of 1.5 W at a repetition frequency of 60 kHz and a pulse length of about 50 ns. In this case too, the exact setting depends on the nature and the thickness of the metal layer 12 to be removed.
  • FIG. 4 shows how structuring can be carried out on the substrate by means of photolithography.
  • a photosensitive layer 16 is first applied to the metal layer 12, which is exposed to a laser beam 2-4 in predetermined areas 16a.
  • the exposed layer is then developed and washed out, so that the underlying metal layer regions 12a are exposed and can be etched away.
  • FIG. 5 shows a photo in plan view of a substrate 10 with a photosensitive layer 16, which was exposed in the region 16a with a laser beam and then washed out.
  • a photoresist known under the trade name Probelec with a sensitivity of 1200 mJ / cm 2 at a laser wavelength of 355 nm was used. It was exposed with a frequency-tripled, diode-pumped semiconductor laser with a wavelength of 355 nm, a repetition frequency of 200 kHz and a pulse duration of approximately 100-200 ns with an average laser power of approximately 100 mW.
  • a line width of about 30 ⁇ was exposed with a deflection speed of about 100 to 600 nm / s. It can be seen in FIG.
  • the exposure can also be carried out with the same laser device as the structuring or drilling.
  • the achievable lines and spaces between the desired structures are determined by the diameter of the focused laser spot, the sensitivity of the photoresist and the repetition rate of the laser pulses.
  • the line width that can be achieved is a folding of the spatial beam distribution in focus with the spectral sensitivity of the photoresist.
  • it is a pulsed laser beam, a straight, continuous line is achieved by superimposing the successive pulses.
  • the corresponding setting of the laser repetition frequency and the deflection speed of the galvo mirror ensures that the photoresist is not removed but is exposed, so that the same effect as with the frequently used cw-Ar + laser is achieved.
  • line widths of about 30 ⁇ m can be generated.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)

Abstract

Pour traiter des substrats de commutation électrique, une source de rayonnement laser (1) à laser à corps solide pulsé, pompé par diode et à facteur de qualité contrôlé, est employée, ledit laser pouvant produire un rayonnement laser ayant une longueur d'onde comprise entre 266 nm et 1064 nm, une fréquence d'impulsions comprise entre 1 kHz et 1 MHz et une longueur d'impulsion de 30 ns à 200 ns pour une puissance laser moyenne comprise entre 0,1 W et environ 5 W. Selon l'invention, une commande permet, selon les conditions d'utilisation, à des types de fonctionnement prédéterminées d'être réglées avec différentes conditions correspondantes, afin de réaliser au choix avec le même laser, un type de fonctionnement de perçage, un type de fonctionnement d'ablation ou un type de fonctionnement d'éclairage. Une unité de déflexion à miroir galvanométrique réglable également au moyen de l'unité de commande, permet la déviation du rayonnement laser sur le substrat en fonction du type de fonctionnement respectif.
EP03785671A 2003-02-20 2003-11-26 Dispositif et procede pour traiter au laser des substrats de commutation electrique Withdrawn EP1594651A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10307309A DE10307309B4 (de) 2003-02-20 2003-02-20 Vorrichtung und Verfahren zur Bearbeitung von elektrischen Schaltungssubstraten mittels Laser
DE10307309 2003-02-20
PCT/EP2003/013314 WO2004073917A1 (fr) 2003-02-20 2003-11-26 Dispositif et procede pour traiter au laser des substrats de commutation electrique

Publications (1)

Publication Number Publication Date
EP1594651A1 true EP1594651A1 (fr) 2005-11-16

Family

ID=32841752

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03785671A Withdrawn EP1594651A1 (fr) 2003-02-20 2003-11-26 Dispositif et procede pour traiter au laser des substrats de commutation electrique

Country Status (8)

Country Link
US (1) US6849823B2 (fr)
EP (1) EP1594651A1 (fr)
JP (1) JP2006513862A (fr)
KR (1) KR20050103951A (fr)
CN (1) CN100448594C (fr)
AU (1) AU2003294733A1 (fr)
DE (1) DE10307309B4 (fr)
WO (1) WO2004073917A1 (fr)

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US20160279737A1 (en) 2015-03-26 2016-09-29 Pratt & Whitney Canada Corp. Laser drilling through multi-layer components
JP2018526217A (ja) * 2015-05-14 2018-09-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低吸収特性を有するレーザー波長を利用した透過性材料の除去方法
CN106425126B (zh) * 2016-11-11 2017-12-29 盐城工学院 一种多层印刷电路板飞秒激光打孔装置及其打孔方法
DE102018208715A1 (de) * 2017-12-20 2019-06-27 Magna Exteriors Gmbh Verfahren zum Herstellen eines Kunststoffbauteils, sowie Kunststoffbauteil und Bearbeitungsanlage
CN114176768B (zh) * 2021-12-10 2024-01-30 北京市汉华环球科技发展有限责任公司 一种点阵激光治疗仪中振镜偏转超时检测方法及装置
DE102022130159A1 (de) 2022-11-15 2024-05-16 Morino Stübe Displayschutzeinrichtung und verfahren zu deren herstellung

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Also Published As

Publication number Publication date
KR20050103951A (ko) 2005-11-01
CN1753755A (zh) 2006-03-29
JP2006513862A (ja) 2006-04-27
AU2003294733A1 (en) 2004-09-09
US6849823B2 (en) 2005-02-01
CN100448594C (zh) 2009-01-07
US20040164057A1 (en) 2004-08-26
DE10307309A1 (de) 2004-09-09
DE10307309B4 (de) 2007-06-14
WO2004073917A1 (fr) 2004-09-02

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