EP1566717B1 - Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung - Google Patents

Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung Download PDF

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Publication number
EP1566717B1
EP1566717B1 EP05101272A EP05101272A EP1566717B1 EP 1566717 B1 EP1566717 B1 EP 1566717B1 EP 05101272 A EP05101272 A EP 05101272A EP 05101272 A EP05101272 A EP 05101272A EP 1566717 B1 EP1566717 B1 EP 1566717B1
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EP
European Patent Office
Prior art keywords
current
resistance
branch
temperature
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP05101272A
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English (en)
French (fr)
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EP1566717A1 (de
Inventor
Joel Chatal
Abdellatif Bendraoui
Mikael Tual
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Microchip Technology Nantes
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Atmel Nantes SA
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Definitions

  • the field of the invention is that of the design of electronic and micro-electronic circuits. More specifically, the invention relates to the field of the generation of reference electrical voltages, used in all applications that require the availability of a controlled voltage having very small variations as a function of temperature, variations in the voltage of supply, or variations in the technological parameters of realization of the different components.
  • Such reference voltages are particularly necessary in portable equipment powered by batteries (radiotelephones, laptops, etc.), as well as in systems using complex high-performance electronic circuits, and more generally in integrated circuit-based circuits. microcontrollers.
  • the positive temperature coefficient of the PTAT current source is generally obtained from a voltage difference between two diodes, or between two base-emitter junctions of bipolar transistors, directly biased, and the negative temperature coefficient.
  • the CTAT current source is obtained from the voltage across a diode or the base-emitter junction of a bipolar transistor directly biased.
  • the procedure is conventionally carried out by cascoding or by regulation.
  • the US patent document US 2002/125938 (Kim Young Hee et al. ) has a reference voltage generator comprising a first current generator, delivering a first current proportional to a transmitter-base voltage, and a second current generator, delivering a second current proportional to a thermal voltage.
  • the reference voltage generator then sums these two currents and generates a stable reference voltage.
  • Such a reference voltage generator uses a current mirror having a high output impedance and a wide excursion to reduce the variations of the reference voltage, but does not attempt to reduce the sensitivity of the output voltage to variations in the values of the reference voltage. resistive components of the device.
  • a first operational amplifier 14 makes it possible to polarize the bipolar components of the circuit, and to generate a current proportional to the temperature (PTAT), the value of which can be adjusted by varying the value of the resistor R1.
  • a second operational amplifier 15 is used in follower assembly, and is connected to the smallest bipolar transistor Q1: it is used to generate a current complementary to the temperature (PTAT), whose value can be adjusted by acting on the resistor R2.
  • Such a circuit also comprises a current source not shown in FIG. 1, which comprises a starting circuit active at power-up, and supplies the bias current of the two operational amplifiers 14 and 15.
  • the device of FIG. 1 delivers a reference voltage VREF, the expression of which is given by VREF-Rs (I 1 + I 2).
  • the first term k ⁇ T ⁇ R ⁇ s q ⁇ R 1 ⁇ ln ⁇ S 2 S 1 of this equation is proportional to the absolute temperature T
  • the second term R ⁇ s ⁇ V B ⁇ E ⁇ 1 R 2 is inversely proportional to T.
  • Figure 2 shows an exemplary embodiment of the device shown schematically in Figure 1.
  • Figures 1 and 2 the same functional elements are designated by the same reference numerals.
  • the current source (which comprises a start-up circuit active at power-up, and supplies the bias current of the two operational amplifiers 14 and 15) which was not shown in FIG. 1, is illustrated in FIG. reference numeral 12.
  • Reference voltage generating devices of the prior art include integrated components, such as polysilicon resistors.
  • a disadvantage of these components is that their value may vary by plus or minus 20%, depending on the parameters of the technology in which they are made (typically, depending on the wafer (or wafer) of silicon on which they are made) . These components therefore have a mediocre absolute precision, which has the effect of inducing a dispersion of the reference voltage delivered at the output, as a function of the temperature as technological parameters ("process" variations).
  • a disadvantage of the "Bandgap" reference voltage generation techniques of the prior art is therefore the inaccuracy of the voltage generated, in particular depending on temperature variations and technological parameters.
  • the invention particularly aims to overcome these disadvantages of the prior art.
  • an object of the invention is to provide a technique for generating a reference voltage which has an increased accuracy compared to the reference voltages generated according to the techniques of the prior art.
  • the object of the invention is to improve the accuracy of the reference voltage generated with respect to temperature variations and / or technological parameters for manufacturing the components (especially in the context of the use of components of the polysilicon resistors type).
  • the object of the invention is to provide a technique for generating a reference voltage that makes it possible to reduce the dispersion of the output voltage of a "bandgap" type device.
  • Another object of the invention is to provide such a technique which is simple and inexpensive to implement, and which does not require the adjustment of specific components.
  • the invention aims to provide such a technique which limits the adjustment of the value of the components after assembly, when their operating conditions change.
  • Another object of the invention is to propose such a technique which does not significantly increase the complexity of the reference voltage generation devices with respect to the prior art.
  • the invention also aims to provide such a technique which is well suited to low voltage reference voltage generating devices operating by summing currents.
  • the invention is based on a completely new and inventive approach to the generation of a reference voltage, independent of the temperature and variations in manufacturing processes of the components constituting such a device.
  • the invention proposes a technique for generating a reference voltage which has an improved accuracy compared to the techniques of the prior art, by reducing the sensitivity to the values of the resistors used.
  • This technique is based on a "bandgap" type device based on operational amplifiers.
  • This type of bandgap allows in particular to provide an adjustable output voltage and between 0 V and the supply voltage. It can also operate at voltages below 1V.
  • this second resistance is made according to the same technological method as the first resistance, the evolution of its value will be similar to that of the first resistance, which allows a fine compensation of the dependence on the value of the first resistance of the current. circulating in the first branch.
  • the invention thus allows the removal of a component adjustment step, which was according to the prior art necessary as soon as a variation of the resistivity occurred.
  • said reduction means act to increase, respectively reduce, the current flowing in said first branch when the resistivity of said first resistor is greater, respectively lower than a reference value.
  • said second resistor is placed on said second branch, on a link established between said first and second sources. current.
  • This second resistor is thus placed in series with the bipolar transistor of the second branch.
  • the second resistor may in particular be connected in series between the second current source and a power supply of the voltage generating device.
  • said second resistor is chosen such that the ratio of said proportional and complementary currents to the temperature remains within a predetermined range of values when the value of said first resistor varies.
  • This range of values is as narrow as possible, so as to ensure that the ratio of the currents generated by each of the first and second generators is as constant as possible, according to the evolution of the technological parameters.
  • the first and second resistors are made according to the same technology, so as to have the same behavior as a function of the variations in operating conditions of said device.
  • the first and second resistors may be polysilicon resistors made on the same wafer.
  • the invention also relates to an electronic integrated circuit comprising a device for generating a reference voltage comprising a first and a second current generator respectively delivering a proportional current and a current complementary to the temperature, and means for summing said currents. , so as to obtain a voltage independent of said temperature.
  • the first current generator comprises at least one operational amplifier and two branches in parallel, namely a first branch comprising a first current source, controlled by the operational amplifier, and a first bipolar transistor, and a second branch comprising a second source. of current, controlled by the operational amplifier, a first resistor and a second transistor bipolar.
  • Such a generation device comprises means for reducing the dependence on the value of said first resistance of the current flowing in said first branch, said reduction means comprising at least one second resistance of non-adjustable value.
  • the general principle of the invention is based on the introduction of means making it possible to reduce the dependence on the value of the resistances of the PTAT type current in a reference voltage generator device by summing currents.
  • An additional PMOS transistor M0 and a current source 10 have been added to supply power to the bipolar transistors Q1 and Q2.
  • V (in_p) and V (in_m) represent the two input voltages at the points A and B of the operational amplifier 14 of FIGS. 1 and 2, as a function of the (identical) current. injected on these points A and B.
  • the abscissa of the two curves corresponds to the (identical) current injected at points A and B (expressed in tens of microamperes ⁇ A, ie 1. e-5 A).
  • the ordinate of these curves corresponds to the voltage, expressed in volts V, at points A and B.
  • V (in_m) V (in_m)
  • the abscissa of the two curves corresponds to the (identical) current injected at the points A and B (expressed in tens microamperes ⁇ A, ie I. e-5 A).
  • the ordinate of these curves corresponds to the voltage, expressed in volts V, at points A and B.
  • the control point P corresponds to an initial value of the resistor R1, and the new control point P 'corresponds to a 20% decrease in the value of R1 with respect to the point P.
  • FIG. 6 corresponds to the assembly of FIGS. 1 and 2, in which an additional transistor R4 in series has been added in the second current branch 32 of the current mirror of the current generator PTAT 10.
  • additional resistance R4 non-adjustable value, aims to reduce the sensitivity of the output voltage VREF to variations in the values of the resistive components of the device.
  • the current flowing in the first branch 31 of the PTAT generator is denoted by I M1 , and by I M2 the current flowing in the second branch 32 of the PTAT generator.
  • the resistor R4 has a non-adjustable value. Here, it is the process variations that slightly modify the value of this resistance. No intervention to adjust (“trimmer”) the value of R4 is necessary.
  • the invention thus proposes a technique for generating a reference voltage having an improved accuracy compared to the techniques of the prior art, by reducing the sensitivity to the values of the resistors, and not requiring the readjustment of the value. components in case of temperature variations, power supply, ...
  • the abscissa of the curves of FIG. 8 represents the resistivity of the polysilicon with respect to the nominal resistivity (thus, an abscissa of 1.2 corresponds, for example, to a 20% increase in the resistivity), and the ordinate VREF corresponds to the output voltage of the "bandgap", expressed in volts.
  • the reference voltage VREF delivered at the output of the "bandgap" device of the invention hardly depends any more on process variations: indeed, when the resistivity of the components of the device changes, the voltage VREF remains almost constant (curve referenced 82). According to the prior art however (curve referenced 81), the voltage VREF decreased sharply as the resistivity of the components increased.
  • FIG. 9 presents the evolution of the reference voltage VREF as a function of the temperature, for each of these two cases (with (curve referenced 91) or without (curve referenced 92) additional resistance R4), for a resistivity polysilicon components equal to 1.2 times their nominal resistivity.
  • the stability, as a function of temperature, of the voltage VREF generated at the output of the "bandgap" device is better in the case where, in accordance with the invention, a resistor R4 has been added in series in the branch 32 of the current mirror of the PTAT generator 10.
  • Figure 10 shows a histogram of different VREF "bandgap" reference voltage measurements obtained from 7 different wafers. More precisely, this histogram corresponds to the measurements of the output voltage of the "bandgap", for a solution where a resistor R4 has been added. These measurements were made at 25 ° C.
  • the abscissa of the histogram corresponds to the different voltage values VREF measured (in volts), and the ordinate of each bar of the histogram represents the frequency (ie the number of pieces) for each value of the voltage VREF in abscissa (no unit of measure is therefore associated with the values obtained on the ordinate).
  • the means for reducing the dependence on the value of the resistor R1 of the current flowing in the first branch 31 of the PTAT current generator consist of a resistor R4. placed in series in this branch.
  • these means could also consist of an additional current injected into the first branch 31 of the current generator PTAT, which would compensate for the variations of the current I M1 due to the resistivity change of R1.
  • these means could consist of an additional current source proportional to the current I1 placed in shunt on the bipolar transistor Q1.
  • These means could also consist of one or more additional resistors, external to the circuit of the PTAT generator 10.
  • resistors R1, R2 and Rs external to the circuit, and precise, would also improve the stability of the resistance, but increase both the number of inputs / outputs that the number of components used, and would therefore lead to an overall increase in the cost of the "bandgap" device of the invention.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)

Claims (7)

  1. Vorrichtung zur Erzeugung einer elektrischen Referenzspannung, mit einem ersten und einem zweiten Stromgenerator, der jeweils einen zur Temperatur proportionalen Strom und komplementären Strom liefert, und Summierungsmittel dieser Ströme, so dass eine Spannung, die unabhängig von dieser Temperatur ist, erhalten wird,
    wobei der erste Stromgenerator zumindest einen Operationsverstärker (14) und zwei Parallelzweige aufweist, wobei ein erster Zweig (31) eine erste Stromquelle und einen ersten bipolaren Transistor aufweist und ein zweiter Zweig (32) eine zweite Stromquelle, einen ersten Widerstand (R1) und einen zweiten bipolaren Transistor aufweist,
    dadurch gekennzeichnet, dass er Mittel zur Reduzierung der Abhängigkeit vom Wert des ersten Widerstands (R1) des Stroms, der in dem ersten Zweig (31) fließt, aufweist, wobei diese Reduzierungsmittel zumindest einen zweiten Widerstand von nicht verstellbarem Wert (R4) aufweisen, der in Reihe in dem zweiten Zweig (32) zwischen der zweiten Stromquelle und einer Speisung der Vorrichtung vorgesehen ist.
  2. Vorrichtung zum Erzeugen nach Anspruch 1, dadurch gekennzeichnet, dass die Reduzierungsmittel derart wirken, dass sie den Strom, der in dem ersten Zweig (31) fließt, erhöhen bzw. reduzieren, wenn der spezifische Widerstand des ersten Widerstands (R1) größer bzw. kleiner als ein Referenzwert ist.
  3. Vorrichtung zum Erzeugen nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass der zweite Widerstand (R4) auf dem zweiten Zweig (32) auf einer Verbindung, die zwischen der ersten und zweiten Stromquelle erstellt wurde, vorgesehen ist.
  4. Vorrichtung zum Erzeugen nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass der zweite Widerstand (R4) derart gewählt ist, dass das Verhältnis zwischen dem zur Temperatur proportionalen und komplementären Strom in einem vorherbestimmten Wertebereich bleibt, wenn der Wert des ersten Widerstands (R1) variiert.
  5. Vorrichtung zum Erzeugen nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass der erste und zweite Widerstand nach einer gleichen Technologie verwirklicht sind, so dass ein gleiches Verhalten in Abhängigkeit der Variationen der Betriebsbedingungen der Vorrichtung vorgelegt wird.
  6. Vorrichtung zum Erzeugen nach Anspruch 5, dadurch gekennzeichnet, dass der erste und zweite Widerstand Polysiliziumwiderstände sind, die auf einem gleichen Wafer ausgestaltet sind.
  7. Elektronische integrierte Schaltung, dadurch gekennzeichnet, dass sie eine Vorrichtung zur Erzeugung einer elektrischen Referenzspannung nach Anspruch 1 aufweist.
EP05101272A 2004-02-20 2005-02-18 Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung Expired - Fee Related EP1566717B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0401753 2004-02-20
FR0401753A FR2866724B1 (fr) 2004-02-20 2004-02-20 Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant

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EP1566717A1 EP1566717A1 (de) 2005-08-24
EP1566717B1 true EP1566717B1 (de) 2007-08-29

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US (1) US7218167B2 (de)
EP (1) EP1566717B1 (de)
DE (1) DE602005002160T2 (de)
ES (1) ES2293476T3 (de)
FR (1) FR2866724B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629832B2 (en) * 2006-04-28 2009-12-08 Advanced Analog Silicon IP Corporation Current source circuit and design methodology
KR100780771B1 (ko) * 2006-06-30 2007-11-29 주식회사 하이닉스반도체 밴드-갭 기준 전압 발생 장치
FR2903312B1 (fr) * 2006-07-05 2008-09-26 Univ Aix Marseille Ii Utilisation d'inhibiteurs d'hmg-coa reductase et de farnesyl-pyrophosphate synthase dans la preparation d'un medicament
US7852144B1 (en) * 2006-09-29 2010-12-14 Cypress Semiconductor Corporation Current reference system and method
US8217713B1 (en) 2006-10-24 2012-07-10 Cypress Semiconductor Corporation High precision current reference using offset PTAT correction
TWI337744B (en) * 2007-06-05 2011-02-21 Etron Technology Inc Electronic device and related method for performing compensation operation on electronic element
US7701263B2 (en) * 2008-03-31 2010-04-20 Globalfoundries Inc. Cascode driver with gate oxide protection
TWI361967B (en) * 2008-04-21 2012-04-11 Ralink Technology Corp Bandgap voltage reference circuit
WO2009153618A1 (en) * 2008-06-18 2009-12-23 Freescale Semiconductor, Inc. Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior
US11029718B2 (en) * 2017-09-29 2021-06-08 Intel Corporation Low noise bandgap reference apparatus

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Publication number Priority date Publication date Assignee Title
EP0197965B1 (de) * 1984-10-01 1991-01-16 AT&T Corp. Fet-stromquelle
EP0504983A1 (de) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Referenzschaltung zum Zuführen eines Referenzstromes mit vorbestimmtem Temperaturkoeffizienten
US6531911B1 (en) * 2000-07-07 2003-03-11 Ibm Corporation Low-power band-gap reference and temperature sensor circuit
KR100400304B1 (ko) * 2000-12-27 2003-10-01 주식회사 하이닉스반도체 커런트 미러형의 밴드갭 기준전압 발생장치
FR2842317B1 (fr) 2002-07-09 2004-10-01 Atmel Nantes Sa Source de tension de reference, capteur de temperature, detecteur de seuil de temperature, puce et systeme correspondant
JP2005128939A (ja) * 2003-10-27 2005-05-19 Fujitsu Ltd 半導体集積回路
US7012416B2 (en) * 2003-12-09 2006-03-14 Analog Devices, Inc. Bandgap voltage reference

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Publication number Publication date
DE602005002160D1 (de) 2007-10-11
FR2866724A1 (fr) 2005-08-26
US20050206443A1 (en) 2005-09-22
US7218167B2 (en) 2007-05-15
FR2866724B1 (fr) 2007-02-16
ES2293476T3 (es) 2008-03-16
EP1566717A1 (de) 2005-08-24
DE602005002160T2 (de) 2008-04-24

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