DE602005002160D1 - Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung - Google Patents

Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung

Info

Publication number
DE602005002160D1
DE602005002160D1 DE602005002160T DE602005002160T DE602005002160D1 DE 602005002160 D1 DE602005002160 D1 DE 602005002160D1 DE 602005002160 T DE602005002160 T DE 602005002160T DE 602005002160 T DE602005002160 T DE 602005002160T DE 602005002160 D1 DE602005002160 D1 DE 602005002160D1
Authority
DE
Germany
Prior art keywords
generating
integrated circuit
reference voltage
corresponding integrated
improved reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005002160T
Other languages
English (en)
Other versions
DE602005002160T2 (de
Inventor
Joel Chatal
Abdellatif Bendraoui
Mikael Tual
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Nantes
Original Assignee
Atmel Nantes SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Nantes SA filed Critical Atmel Nantes SA
Publication of DE602005002160D1 publication Critical patent/DE602005002160D1/de
Application granted granted Critical
Publication of DE602005002160T2 publication Critical patent/DE602005002160T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE602005002160T 2004-02-20 2005-02-18 Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung Active DE602005002160T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0401753 2004-02-20
FR0401753A FR2866724B1 (fr) 2004-02-20 2004-02-20 Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant

Publications (2)

Publication Number Publication Date
DE602005002160D1 true DE602005002160D1 (de) 2007-10-11
DE602005002160T2 DE602005002160T2 (de) 2008-04-24

Family

ID=34708013

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005002160T Active DE602005002160T2 (de) 2004-02-20 2005-02-18 Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung

Country Status (5)

Country Link
US (1) US7218167B2 (de)
EP (1) EP1566717B1 (de)
DE (1) DE602005002160T2 (de)
ES (1) ES2293476T3 (de)
FR (1) FR2866724B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629832B2 (en) * 2006-04-28 2009-12-08 Advanced Analog Silicon IP Corporation Current source circuit and design methodology
KR100780771B1 (ko) * 2006-06-30 2007-11-29 주식회사 하이닉스반도체 밴드-갭 기준 전압 발생 장치
FR2903312B1 (fr) * 2006-07-05 2008-09-26 Univ Aix Marseille Ii Utilisation d'inhibiteurs d'hmg-coa reductase et de farnesyl-pyrophosphate synthase dans la preparation d'un medicament
US7852144B1 (en) * 2006-09-29 2010-12-14 Cypress Semiconductor Corporation Current reference system and method
US8217713B1 (en) 2006-10-24 2012-07-10 Cypress Semiconductor Corporation High precision current reference using offset PTAT correction
TWI337744B (en) * 2007-06-05 2011-02-21 Etron Technology Inc Electronic device and related method for performing compensation operation on electronic element
US7701263B2 (en) * 2008-03-31 2010-04-20 Globalfoundries Inc. Cascode driver with gate oxide protection
TWI361967B (en) * 2008-04-21 2012-04-11 Ralink Technology Corp Bandgap voltage reference circuit
WO2009153618A1 (en) * 2008-06-18 2009-12-23 Freescale Semiconductor, Inc. Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior
US11029718B2 (en) * 2017-09-29 2021-06-08 Intel Corporation Low noise bandgap reference apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197965B1 (de) * 1984-10-01 1991-01-16 AT&T Corp. Fet-stromquelle
EP0504983A1 (de) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Referenzschaltung zum Zuführen eines Referenzstromes mit vorbestimmtem Temperaturkoeffizienten
US6531911B1 (en) * 2000-07-07 2003-03-11 Ibm Corporation Low-power band-gap reference and temperature sensor circuit
KR100400304B1 (ko) * 2000-12-27 2003-10-01 주식회사 하이닉스반도체 커런트 미러형의 밴드갭 기준전압 발생장치
FR2842317B1 (fr) 2002-07-09 2004-10-01 Atmel Nantes Sa Source de tension de reference, capteur de temperature, detecteur de seuil de temperature, puce et systeme correspondant
JP2005128939A (ja) * 2003-10-27 2005-05-19 Fujitsu Ltd 半導体集積回路
US7012416B2 (en) * 2003-12-09 2006-03-14 Analog Devices, Inc. Bandgap voltage reference

Also Published As

Publication number Publication date
FR2866724A1 (fr) 2005-08-26
US20050206443A1 (en) 2005-09-22
US7218167B2 (en) 2007-05-15
EP1566717B1 (de) 2007-08-29
FR2866724B1 (fr) 2007-02-16
ES2293476T3 (es) 2008-03-16
EP1566717A1 (de) 2005-08-24
DE602005002160T2 (de) 2008-04-24

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