FR2866724A1 - Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant - Google Patents

Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant

Info

Publication number
FR2866724A1
FR2866724A1 FR0401753A FR0401753A FR2866724A1 FR 2866724 A1 FR2866724 A1 FR 2866724A1 FR 0401753 A FR0401753 A FR 0401753A FR 0401753 A FR0401753 A FR 0401753A FR 2866724 A1 FR2866724 A1 FR 2866724A1
Authority
FR
France
Prior art keywords
generating
current
integrated circuit
electrical voltage
corresponding electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR0401753A
Other languages
English (en)
Other versions
FR2866724B1 (fr
Inventor
Joel Chatal
Abdellatif Bendraoui
Mikael Tual
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Nantes
Original Assignee
Atmel Nantes SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Nantes SA filed Critical Atmel Nantes SA
Priority to FR0401753A priority Critical patent/FR2866724B1/fr
Priority to DE602005002160T priority patent/DE602005002160T2/de
Priority to EP05101272A priority patent/EP1566717B1/fr
Priority to ES05101272T priority patent/ES2293476T3/es
Priority to US11/062,888 priority patent/US7218167B2/en
Publication of FR2866724A1 publication Critical patent/FR2866724A1/fr
Application granted granted Critical
Publication of FR2866724B1 publication Critical patent/FR2866724B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un dispositif de génération d'une tension électrique de référence comprenant un premier (10) et un second (11) générateurs de courant délivrant respectivement un courant proportionnel et un courant inversement proportionnel à la température, et des moyens de sommation desdits courants, de façon à obtenir une tension indépendante de ladite température, ledit premier générateur de courant (10) comprenant deux branches en parallèle, une première branche (31) comprenant une première source de courant et un premier transistor bipolaire, et une seconde branche (32) comprenant une seconde source de courant, une première résistance (R1) et un second transistor bipolaire.Selon l'invention, un tel dispositif de génération d'une tension électrique de référence comprend des moyens de réduction de la dépendance à la valeur de ladite première résistance (R1) du courant circulant dans ladite première branche (31).
FR0401753A 2004-02-20 2004-02-20 Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant Expired - Fee Related FR2866724B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0401753A FR2866724B1 (fr) 2004-02-20 2004-02-20 Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant
DE602005002160T DE602005002160T2 (de) 2004-02-20 2005-02-18 Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung
EP05101272A EP1566717B1 (fr) 2004-02-20 2005-02-18 Dispositif de génération d'une tension électrique de référence de précision améliorée et circuit intégré électronique correspondant
ES05101272T ES2293476T3 (es) 2004-02-20 2005-02-18 Dispositivo de generacion de una tension electrica de referencia de precision mejorada y circuito electronico integrado correspondiente.
US11/062,888 US7218167B2 (en) 2004-02-20 2005-02-22 Electric reference voltage generating device of improved accuracy and corresponding electronic integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0401753A FR2866724B1 (fr) 2004-02-20 2004-02-20 Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant

Publications (2)

Publication Number Publication Date
FR2866724A1 true FR2866724A1 (fr) 2005-08-26
FR2866724B1 FR2866724B1 (fr) 2007-02-16

Family

ID=34708013

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0401753A Expired - Fee Related FR2866724B1 (fr) 2004-02-20 2004-02-20 Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant

Country Status (5)

Country Link
US (1) US7218167B2 (fr)
EP (1) EP1566717B1 (fr)
DE (1) DE602005002160T2 (fr)
ES (1) ES2293476T3 (fr)
FR (1) FR2866724B1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629832B2 (en) * 2006-04-28 2009-12-08 Advanced Analog Silicon IP Corporation Current source circuit and design methodology
KR100780771B1 (ko) * 2006-06-30 2007-11-29 주식회사 하이닉스반도체 밴드-갭 기준 전압 발생 장치
FR2903312B1 (fr) * 2006-07-05 2008-09-26 Univ Aix Marseille Ii Utilisation d'inhibiteurs d'hmg-coa reductase et de farnesyl-pyrophosphate synthase dans la preparation d'un medicament
US7852144B1 (en) * 2006-09-29 2010-12-14 Cypress Semiconductor Corporation Current reference system and method
US8217713B1 (en) 2006-10-24 2012-07-10 Cypress Semiconductor Corporation High precision current reference using offset PTAT correction
TWI337744B (en) * 2007-06-05 2011-02-21 Etron Technology Inc Electronic device and related method for performing compensation operation on electronic element
US7701263B2 (en) * 2008-03-31 2010-04-20 Globalfoundries Inc. Cascode driver with gate oxide protection
TWI361967B (en) * 2008-04-21 2012-04-11 Ralink Technology Corp Bandgap voltage reference circuit
WO2009153618A1 (fr) * 2008-06-18 2009-12-23 Freescale Semiconductor, Inc. Circuit de compensation de température et procédé de génération d’une tension de référence à comportement en température bien défini
US11029718B2 (en) * 2017-09-29 2021-06-08 Intel Corporation Low noise bandgap reference apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197965B1 (fr) * 1984-10-01 1991-01-16 AT&T Corp. Source de courant pour transistor a effet de champ
EP0504983A1 (fr) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Circuit de référence conçu pour fournir un courant de référence présentant un coefficient de température déterminé
US20020125938A1 (en) * 2000-12-27 2002-09-12 Young Hee Kim Current mirror type bandgap reference voltage generator

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531911B1 (en) * 2000-07-07 2003-03-11 Ibm Corporation Low-power band-gap reference and temperature sensor circuit
FR2842317B1 (fr) 2002-07-09 2004-10-01 Atmel Nantes Sa Source de tension de reference, capteur de temperature, detecteur de seuil de temperature, puce et systeme correspondant
JP2005128939A (ja) * 2003-10-27 2005-05-19 Fujitsu Ltd 半導体集積回路
US7012416B2 (en) * 2003-12-09 2006-03-14 Analog Devices, Inc. Bandgap voltage reference

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197965B1 (fr) * 1984-10-01 1991-01-16 AT&T Corp. Source de courant pour transistor a effet de champ
EP0504983A1 (fr) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Circuit de référence conçu pour fournir un courant de référence présentant un coefficient de température déterminé
US20020125938A1 (en) * 2000-12-27 2002-09-12 Young Hee Kim Current mirror type bandgap reference voltage generator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GUPTA V ET AL: "Predicting the effects of error sources in bandgap reference circuits and evaluating their design implications", 2002 45TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS. CONFERENCE PROCEEDINGS (CAT. NO.02CH37378), vol. 3, 2002, PISCATAWAY, NJ, USA, pages III 575 - III 578, XP002300515, ISBN: 0-7803-7523-8 *

Also Published As

Publication number Publication date
DE602005002160D1 (de) 2007-10-11
US20050206443A1 (en) 2005-09-22
US7218167B2 (en) 2007-05-15
EP1566717B1 (fr) 2007-08-29
FR2866724B1 (fr) 2007-02-16
ES2293476T3 (es) 2008-03-16
EP1566717A1 (fr) 2005-08-24
DE602005002160T2 (de) 2008-04-24

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ST Notification of lapse

Effective date: 20141031