EP1566717A1 - Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung - Google Patents

Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung Download PDF

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Publication number
EP1566717A1
EP1566717A1 EP05101272A EP05101272A EP1566717A1 EP 1566717 A1 EP1566717 A1 EP 1566717A1 EP 05101272 A EP05101272 A EP 05101272A EP 05101272 A EP05101272 A EP 05101272A EP 1566717 A1 EP1566717 A1 EP 1566717A1
Authority
EP
European Patent Office
Prior art keywords
current
branch
resistor
temperature
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05101272A
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English (en)
French (fr)
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EP1566717B1 (de
Inventor
Joel Chatal
Abdellatif Bendraoui
Mikael Tual
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Nantes
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Atmel Nantes SA
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Publication of EP1566717A1 publication Critical patent/EP1566717A1/de
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Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Definitions

  • the field of the invention is that of circuit design electronic and microelectronics. More specifically, the invention relates to field of electrical reference voltage generation, used in all applications that need to be able to have a controlled voltage with very small variations as a function of temperature, variations supply voltage, or variations in the technological parameters of the realization of the different components.
  • the positive temperature coefficient of the source of PTAT current is usually obtained from a voltage difference between two diodes, or between two base-emitter junctions of bipolar transistors, polarized live, and the negative temperature coefficient of the source of CPTAT current is obtained from the voltage across a diode or the base-emitter junction of a live-polarized bipolar transistor.
  • a second operational amplifier 15 is used in follower assembly, and is connected to the smallest bipolar transistor Q1: it is used to generate a current inversely proportional to temperature (CPTAT), whose value may be adjusted by playing on resistance R2.
  • CPTAT current inversely proportional to temperature
  • FIG. Figure 2 which will not be described here in more detail, presents an example embodiment of the device shown schematically in FIG. Figures 1 and 2, the same functional elements are designated by the same numerical references.
  • the power source (which includes an active start circuit at the start energized, and provides the bias current of both amplifiers 14 and 15) which was not shown in FIG. 1, is illustrated in FIG. Figure 2 under the reference numeral 12.
  • a disadvantage of these components is that their value may vary more approximately 20%, depending on the parameters of the technology in which they are realized (typically, depending on the wafer (or slice) of silicon on which they are realized). These components therefore have absolute precision mediocre, which has the effect of inducing a dispersion of the reference voltage output, depending on the temperature and the parameters technological changes ("process" variations).
  • the object of the invention is in particular to overcome these drawbacks of the art prior.
  • an object of the invention is to provide a technique of generating a reference voltage that has increased accuracy compared to the reference voltages generated according to the techniques of the art prior.
  • the object of the invention is to improve the accuracy of the reference voltage generated with respect to temperature variations and / or technological parameters for the manufacture of components (particularly in part of the use of polysilicon resistors).
  • the invention aims to provide a technique of generation of a reference electrical voltage which makes it possible to reduce the dispersion of the output voltage of a "bandgap" type device.
  • Another object of the invention is to propose such a technique which is simple and inexpensive to implement, and which does not require the setting of specific components.
  • the invention aims to provide such a technique that limits the adjustment of the value of the components, after their assembly, when their operating conditions change.
  • Another object of the invention is to propose such a technique which does not significantly increase the complexity of the generation devices reference voltage, compared to the prior art.
  • the invention also aims to provide such a technique that is well adapted to devices for generating reference electrical voltages low voltage operating by summing currents.
  • such a device for generating an electrical voltage of reference includes means of reducing dependence on the value of said first resistance of the current flowing in said first branch, said reduction means comprising at least a second resistance of non-adjustable value.
  • the invention is based on an entirely new and inventive approach of the generation of a reference voltage, independent of the temperature and variations in manufacturing processes of the components constituting such a device.
  • the invention proposes a technique for generating a voltage of reference that has improved accuracy compared to the techniques of art previous, thanks to a reduction of the sensitivity to the values of the resistances used.
  • This technique is based on a "bandgap" type device based on operational amplifiers.
  • This type of bandgap makes it possible in particular to supply an output voltage adjustable and between 0 V and the supply voltage. It can also operate at voltages below 1V.
  • the invention thus makes it possible to eliminate a step of adjusting the components, which was according to the prior art necessary as soon as a variation of the resistivity occurred.
  • said reduction means act in such a way as to increase, respectively reduce, the current flowing in said first branches when the resistivity of said first resistance is greater, respectively less than a reference value.
  • said second resistor is placed on said second branch, on a link established between said first and second sources current.
  • This second resistor is thus placed in series with the transistor bipolar of the second limb.
  • the second resistor can in particular be connected in series between the second current source and a power supply of the generation device voltage.
  • said second resistance is chosen so as to what the ratio of said currents proportional and inversely proportional to the temperature remains within a predetermined range of values when the value of said first resistance varies.
  • the first and second resistors may be polysilicon resistors made on the same wafer.
  • Such a generation device comprises means for reducing the dependence on the value of said first resistance of the current flowing in said first branch, said reduction means comprising at least one second non-adjustable resistance.
  • the control point P corresponds to an initial value of the resistance R1, and the new regulation point P 'corresponds to a decrease of 20% of the value of R1 with respect to point P.
  • I M 1 I M2 V gs M1 - V T V gs M 2 - V T and where V gs M 1 and V gs M 2 respectively denote the voltage between the gate and the source of transistors M1 and M2, and where V T is the threshold voltage of these transistors.
  • resistance R4 has a value of adjustable. Here, it is the process variations that slightly modify the value of this resistance. No intervention to adjust (“trimmer”) the value of R4 is not necessary.
  • the invention thus proposes a technique for generating a voltage of reference with improved accuracy compared to the techniques of the art previous, thanks to a reduction of the sensitivity to the values of the resistances, and not requiring the readjustment of the value of the components in case of variations temperature, diet, ...
  • the abscissa of the curves of FIG. 8 represents the resistivity of the polysilicon with respect to the nominal resistivity (thus, an abscissa of 1.2 corresponds for example to a 20% increase in the resistivity), and the ordinate VREF corresponds to the output voltage of the "bandgap", expressed in Volts.
  • the reference voltage VREF delivered in the output of the "bandgap" device of the invention hardly depends on the process variations: indeed, when the resistivity of the components of the device evolves, the VREF voltage remains almost constant (referenced curve 82). According to the prior art however (curve referenced 81), the voltage VREF decreased sharply as the resistivity of the components increased.
  • Figure 9 shows the evolution of the reference voltage VREF as a function of temperature, for each of these two cases (with (curve referenced 91) or without (curve referenced 92) additional resistance R4), for a resistivity of the polysilicon components equal to 1.2 times their resistivity nominal.
  • the stability, as a function of temperature, of the voltage VREF generated at the output of the device "bandgap" is better in the where, in accordance with the invention, a resistance R4 has been added in series in the branch 32 of the current mirror of the generator PTAT 10.
  • Figure 10 shows a histogram of different voltage measurements VREF bandgap reference numbers obtained from 7 different wafers. More precisely, this histogram corresponds to measurements of the output voltage of the "bandgap", for a solution where an R4 resistance has been added. These measures were made at 25 ° C.
  • the abscissa of the histogram corresponds to the different values of voltage VREF measured (in volts), and the ordinate of each bar of the histogram represents the frequency (i.e. the number of pieces) for each value of the voltage VREF on the abscissa (no unit of measurement is therefore associated with the values obtained on the ordinate).
  • the means of reduction of the dependence on the value of the resistance R1 of the circulating current in the first branch 31 of the PTAT current generator consist of a resistance R4 placed in series in this branch.
  • These means could also consist of one or more resistors additional, external to the current generator circuit PTAT 10.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
EP05101272A 2004-02-20 2005-02-18 Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung Expired - Fee Related EP1566717B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0401753 2004-02-20
FR0401753A FR2866724B1 (fr) 2004-02-20 2004-02-20 Dispositif de generation d'une tension electrique de reference de precision amelioree et circuit integre electronique correspondant

Publications (2)

Publication Number Publication Date
EP1566717A1 true EP1566717A1 (de) 2005-08-24
EP1566717B1 EP1566717B1 (de) 2007-08-29

Family

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EP05101272A Expired - Fee Related EP1566717B1 (de) 2004-02-20 2005-02-18 Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung

Country Status (5)

Country Link
US (1) US7218167B2 (de)
EP (1) EP1566717B1 (de)
DE (1) DE602005002160T2 (de)
ES (1) ES2293476T3 (de)
FR (1) FR2866724B1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009153618A1 (en) * 2008-06-18 2009-12-23 Freescale Semiconductor, Inc. Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior
US20150105352A1 (en) * 2006-07-05 2015-04-16 Universitè D'aix-Marseille Combination of an hmg-coa reductase inhibitor and a farnesyl-pyrophosphatase synthase inhibitor for the treatment of diseases related to the persistence and/or accumulation of prenylated proteins

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629832B2 (en) * 2006-04-28 2009-12-08 Advanced Analog Silicon IP Corporation Current source circuit and design methodology
KR100780771B1 (ko) * 2006-06-30 2007-11-29 주식회사 하이닉스반도체 밴드-갭 기준 전압 발생 장치
US7852144B1 (en) * 2006-09-29 2010-12-14 Cypress Semiconductor Corporation Current reference system and method
US8217713B1 (en) 2006-10-24 2012-07-10 Cypress Semiconductor Corporation High precision current reference using offset PTAT correction
TWI337744B (en) * 2007-06-05 2011-02-21 Etron Technology Inc Electronic device and related method for performing compensation operation on electronic element
US7701263B2 (en) * 2008-03-31 2010-04-20 Globalfoundries Inc. Cascode driver with gate oxide protection
TWI361967B (en) * 2008-04-21 2012-04-11 Ralink Technology Corp Bandgap voltage reference circuit
US11029718B2 (en) * 2017-09-29 2021-06-08 Intel Corporation Low noise bandgap reference apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197965B1 (de) * 1984-10-01 1991-01-16 AT&T Corp. Fet-stromquelle
EP0504983A1 (de) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Referenzschaltung zum Zuführen eines Referenzstromes mit vorbestimmtem Temperaturkoeffizienten
US20020125938A1 (en) * 2000-12-27 2002-09-12 Young Hee Kim Current mirror type bandgap reference voltage generator

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
US6531911B1 (en) * 2000-07-07 2003-03-11 Ibm Corporation Low-power band-gap reference and temperature sensor circuit
FR2842317B1 (fr) 2002-07-09 2004-10-01 Atmel Nantes Sa Source de tension de reference, capteur de temperature, detecteur de seuil de temperature, puce et systeme correspondant
JP2005128939A (ja) * 2003-10-27 2005-05-19 Fujitsu Ltd 半導体集積回路
US7012416B2 (en) * 2003-12-09 2006-03-14 Analog Devices, Inc. Bandgap voltage reference

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197965B1 (de) * 1984-10-01 1991-01-16 AT&T Corp. Fet-stromquelle
EP0504983A1 (de) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Referenzschaltung zum Zuführen eines Referenzstromes mit vorbestimmtem Temperaturkoeffizienten
US20020125938A1 (en) * 2000-12-27 2002-09-12 Young Hee Kim Current mirror type bandgap reference voltage generator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GUPTA V ET AL: "Predicting the effects of error sources in bandgap reference circuits and evaluating their design implications", 2002 45TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS. CONFERENCE PROCEEDINGS (CAT. NO.02CH37378), vol. 3, 2002, PISCATAWAY, NJ, USA, pages III 575 - III 578, XP002300515, ISBN: 0-7803-7523-8 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150105352A1 (en) * 2006-07-05 2015-04-16 Universitè D'aix-Marseille Combination of an hmg-coa reductase inhibitor and a farnesyl-pyrophosphatase synthase inhibitor for the treatment of diseases related to the persistence and/or accumulation of prenylated proteins
WO2009153618A1 (en) * 2008-06-18 2009-12-23 Freescale Semiconductor, Inc. Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior
US8415940B2 (en) 2008-06-18 2013-04-09 Freescale Semiconductor, Inc. Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior

Also Published As

Publication number Publication date
DE602005002160D1 (de) 2007-10-11
FR2866724A1 (fr) 2005-08-26
US20050206443A1 (en) 2005-09-22
US7218167B2 (en) 2007-05-15
EP1566717B1 (de) 2007-08-29
FR2866724B1 (fr) 2007-02-16
ES2293476T3 (es) 2008-03-16
DE602005002160T2 (de) 2008-04-24

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