EP1540762B1 - Jonction entre une microbande et un guide d'ondes - Google Patents

Jonction entre une microbande et un guide d'ondes Download PDF

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Publication number
EP1540762B1
EP1540762B1 EP03798047A EP03798047A EP1540762B1 EP 1540762 B1 EP1540762 B1 EP 1540762B1 EP 03798047 A EP03798047 A EP 03798047A EP 03798047 A EP03798047 A EP 03798047A EP 1540762 B1 EP1540762 B1 EP 1540762B1
Authority
EP
European Patent Office
Prior art keywords
waveguide
substrate
opening
microstrip
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03798047A
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German (de)
English (en)
Other versions
EP1540762A1 (fr
Inventor
Thomas Johannes MÜLLER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
EADS Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EADS Deutschland GmbH filed Critical EADS Deutschland GmbH
Publication of EP1540762A1 publication Critical patent/EP1540762A1/fr
Application granted granted Critical
Publication of EP1540762B1 publication Critical patent/EP1540762B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the invention relates to an arrangement according to claim 1.
  • Microstrip line waveguide junctions are made, for example DE 197 41 944 A1 or US 6,265,950 B1 known.
  • the microstrip line is applied to the top side of the substrate ( Fig. 1 ).
  • the waveguide HL is attached with an end face on the underside of the substrate S.
  • the substrate S has in the region of the waveguide HL on an opening D, which corresponds substantially to the cross section of the waveguide HL.
  • a coupling element (not shown) is arranged, which projects into the opening D.
  • the aperture D is on the upper side of the substrate S of a shield cap SK surrounded, which is electrically conductively connected by means of electrically conductive boreholes (via-holes) VH with the present on the underside of the substrate S metallization RM.
  • An advantage of the arrangement according to the invention is the simple and cost-effective production of the microstrip waveguide transition. In order to realize the transition, in contrast to the prior art, fewer components are required. Another advantage is that the implementation of the waveguide in the PCB environment is not like in US 6,265,950 must be done on the edge of the circuit board, but that it can be done anywhere on the circuit board. The arrangement according to the invention thus has a small space requirement.
  • the waveguide is an SMD (surface mount device) component.
  • the waveguide part is placed in a simple assembly step from above on the circuit board and conductively connected.
  • the connection of the waveguide to the transition can thus be integrated into known assembly methods. As a result, manufacturing steps are saved, whereby the production costs and time are reduced.
  • Fig. 2 shows in plan view the metallized layer of the substrate.
  • This metallized layer is also referred to as the landing structure for the microstrip waveguide transition.
  • the landing structure LS has a recess A with an opening OZ. Through this opening OZ extends the microstrip line ML, which ends within the recess A.
  • the recess A is surrounded by plated-through holes VH, also referred to as via holes.
  • These vias VH are electrically conductive openings of the substrate, which connects the landing structure LS with the back side metallization (not shown) on the rear side of the substrate.
  • the distance between the via holes VH to each other is so narrow, within the useful frequency range, the radiation of the electromagnetic wave through the intermediate spaces is small.
  • the via holes VH can advantageously extend in a plurality of mutually parallel rows to reduce the radiation.
  • Fig. 3 shows a perspective view of an exemplary stepped inner structure of the SMD component.
  • the component B has corresponding to the opening in the recess of the landing structure (see. Fig. 2 ) also has an opening OB.
  • a stepped structure ST1 ST is formed at a predeterminable distance from the opening OB on the side wall.
  • the side wall of the component B which includes the step structure ST1 and ST lies opposite the substrate surface after assembly of the landing structure LS (cf. Fig. 4 ).
  • the waveguide component B to be applied is opened downwards (in the direction of the substrate) before assembly and is therefore still incomplete.
  • the still missing side wall is formed by the landing structure LS embodied on the substrate.
  • the inventive arrangement is further not by the number of in FIG. 3 or FIG. 4 limited levels shown.
  • the structure ST can be adapted in terms of number of stages, length and width of the individual stages to the respective requirements of the transition.
  • the step designated by the reference symbol ST1 has such a height that in the form-fitting application of the component B to the landing structure according to FIG Fig. 2 the stage ST1 rests directly on the microstrip line ML and thus produces an electrically conductive connection between the microstrip line ML and the component B.
  • Fig. 4 shows a longitudinal section of an inventive arrangement of a microstrip waveguide transition.
  • the component B is according to Fig. 3 positively on the landing structure of the substrate S according to Fig. 3 applied.
  • the component B is thereby in particular applied to the substrate such that an electrically conductive connection is formed between the landing structure and the component B.
  • the substrate S has a substantially continuous metallic coating RM.
  • the waveguide region is identified by the reference HB in the illustration.
  • the transition region is identified by the reference symbol UB.
  • the microstrip waveguide transition works according to the following principle:
  • the high frequency signal outside the waveguide HL is passed through a microstrip line ML with the impedance Z 0 (area 1).
  • the high-frequency signal within the waveguide HL is guided in the form of the TE 10 waveguide fundamental mode.
  • the transition UB gradually converts the field pattern of the microstrip mode into the field pattern of the waveguide mode.
  • the transition UB by the gradations of the component B with respect to the characteristic impedance transforms and ensures in the useful frequency range for an adjustment of the impedance Z 0 to the impedance Z HL of the waveguide HL. This allows a low-loss and low-reflection transition between the two waveguides.
  • the microstrip line ML first leads into region 2 of a so-called cutoff channel.
  • This channel is formed by the component B, the backside metallization RM and the via holes VH, which provide a conductive connection between component B and backside metallization RM.
  • the width of the cutoff channel is chosen so that in this area 2 except the signal-carrying microstrip mode no additional wave type is propagatable.
  • the length of the channel determines the attenuation of the unwanted waveguide mode that can not propagate and prevents radiation into the free space (area 1).
  • the microstrip line ML is in a kind of partially filled waveguide.
  • the waveguide is formed from the component B, the backside metallization RM and the via holes VH (FIG. Fig. 5 ).
  • the step-shaped structure of the component B is connected to the microstrip line ML ( Fig. 6 ).
  • the side walls of the component B are conductively connected to the rear side metallization RM of the substrate S by a so-called row of screens made of via holes VH. This forms a dielectrically loaded ridge waveguide.
  • the signal energy is concentrated between the backside metallization RM and the land formed by the microstrip line ML and the step ST1 of the device B.
  • the height of the step structure ST contained in the component B decreases in the region 5, so that a defined air gap L arises between the substrate material and the step structure ST during the form-fitting assembly of the component B onto the landing structure LS of the substrate S (FIG. Fig. 7 ).
  • the side walls of the component B are conductively connected to the backside metallization RM through via holes VH. This forms a partially filled dielectrically loaded ridge waveguide.
  • the width of the step extends transversely to the longitudinal direction of the waveguide HL to the field image from area 4 gradually to the field image of the waveguide mode to match (area 6).
  • the length, width and height of the stages are chosen so that the impedance of the microstrip mode Z 0 is transformed into the impedance of the waveguide mode Z HL at the end of region 6. If necessary, the number of stages in the structure of the component B in the region 5 can also be increased.
  • Area 6 shows the waveguide area HB.
  • the component B forms the side walls and the lid of the waveguide HL.
  • the waveguide bottom is formed by the landing structure LS of the substrate S, ie in comparison to region 5 there is no dielectric filling in the waveguide HL.
  • One or more transverse to the propagation direction of the waveguide wave screen rows of via holes VH in the transition region between area 5 and Be rich 6 realize the transition between the partially dielectric filled waveguide and the purely air-filled waveguide. At the same time, the coupling of the signal between the landing structure LS and the rear-side metallization is prevented by these screen rows.
  • a step structure (analogous to the step structure in region 5) can optionally also be present in the cap top.
  • the length and height of these stages are chosen to be analogous to region 5 such that, in combination with the other regions, the impedance of the microstrip mode Z 0 is transformed into the impedance Z HL of the waveguide mode present at the end of region 6.
  • Fig. 9 a further advantageous embodiment of the microstrip waveguide transition according to the invention is shown.
  • the waveguide opening DB advantageously has electrically conductive inner walls (IW).
  • the component B advantageously has a step shape ST on the side wall opposite the waveguide opening DB in the region of the opening DB. With this step shape ST, the waveguide wave is deflected by 90 ° from the waveguide region HB of the component B into the waveguide opening DB of the substrate S.
  • a further waveguide or a radiation element may be arranged in the region of the waveguide opening DB.
  • another carrier material TP eg a one to multi-layer printed circuit board or a metal support attached.
  • the advantage of this arrangement is compared to DE 197 41 944 A1 in the simplified and less expensive construction of the substrate S and the carrier material TP.
  • the waveguide opening is milled throughout and the inner walls are metallized by electroplating. Both steps are common in printed circuit board technology, easy to carry out standard procedures.

Landscapes

  • Waveguides (AREA)
  • Structure Of Printed Boards (AREA)
  • Waveguide Connection Structure (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Tires In General (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Automatic Analysis And Handling Materials Therefor (AREA)

Claims (7)

  1. Arrangement pour une transition entre un guide d'ondes à ruban et un guide diélectrique, comprenant
    un guide d'ondes à ruban (ML) disposé sur un côté supérieur d'un substrat diélectrique (S),
    un guide diélectrique disposé sur le côté supérieur du substrat (S) et comportant une ouverture (OB) sur au moins un côté frontal, une paroi latérale du guide diélectrique étant une couche métallisée (LS) réalisée sur le substrat (S),
    un creux (A) aménagé dans la couche métallique (LS) et dans lequel pénètre le guide d'ondes à ruban (ML) à travers l'ouverture (OB) dans le guide diélectrique,
    une métallisation de face arrière (RM) réalisée sur une face arrière du substrat (S),
    des contacts traversants (VH) électriquement conducteurs entre la couche métallisée (LS) sur le côté supérieur du substrat (S) et la métallisation de face arrière (RM), lesquels entourent le creux (A),
    caractérisé en ce que
    une structure (ST) en forme de gradins et reliée de manière conductrice avec le guide d'ondes à ruban (ML) dans au moins une partie (ST1) est réalisée dans la zone de l'ouverture (OB) du guide diélectrique sur une paroi latérale du guide diélectrique qui se trouve à l'opposé du côté supérieur du substrat (S), les gradins de la structure (ST) en forme de gradins présentant une largeur qui augmente dans le sens longitudinal du guide diélectrique à l'opposé de la transition.
  2. Arrangement selon la revendication 1, caractérisé en ce que le guide diélectrique est un composant CMS.
  3. Arrangement selon la revendication 1 ou 2, caractérisé en ce que la structure (ST) en forme de gradins est réalisée sur la paroi latérale du guide diélectrique à l'opposé du creux (A).
  4. Arrangement selon l'une des revendications précédentes, caractérisé en ce que les contacts traversants (VH) s'étendent en plusieurs rangées disposées parallèlement les unes aux autres.
  5. Arrangement selon l'une des revendications précédentes, caractérisé en ce que le substrat (S) présente une ouverture de guide diélectrique (DB) dans la zone de la couche métallisée (LS) sur le côté supérieur du substrat (S).
  6. Arrangement selon la revendication 4, caractérisé en ce que la surface intérieure de l'ouverture de guide diélectrique (DB) est électriquement conductrice.
  7. Arrangement selon la revendication 4 ou 5, caractérisé en ce que la paroi latérale du guide diélectrique à l'opposé du côté supérieur du substrat présente une structure (ST) en forme de gradins dans la zone de l'ouverture de guide diélectrique (DB).
EP03798047A 2002-09-20 2003-07-30 Jonction entre une microbande et un guide d'ondes Expired - Lifetime EP1540762B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10243671 2002-09-20
DE10243671A DE10243671B3 (de) 2002-09-20 2002-09-20 Anordnung für einen Übergang zwischen einer Mikrostreifenleitung und einem Hohlleiter
PCT/DE2003/002553 WO2004030142A1 (fr) 2002-09-20 2003-07-30 Jonction entre une microbande et un guide d'ondes

Publications (2)

Publication Number Publication Date
EP1540762A1 EP1540762A1 (fr) 2005-06-15
EP1540762B1 true EP1540762B1 (fr) 2008-08-27

Family

ID=31896216

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03798047A Expired - Lifetime EP1540762B1 (fr) 2002-09-20 2003-07-30 Jonction entre une microbande et un guide d'ondes

Country Status (15)

Country Link
US (1) US7336141B2 (fr)
EP (1) EP1540762B1 (fr)
JP (1) JP4145876B2 (fr)
KR (1) KR100958790B1 (fr)
CN (1) CN100391045C (fr)
AT (1) ATE406672T1 (fr)
AU (1) AU2003257396B2 (fr)
BR (1) BR0306449A (fr)
CA (1) CA2499585C (fr)
DE (2) DE10243671B3 (fr)
ES (1) ES2312850T3 (fr)
IL (1) IL167325A (fr)
NO (1) NO20041694L (fr)
PL (1) PL207180B1 (fr)
WO (1) WO2004030142A1 (fr)

Families Citing this family (22)

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Publication number Priority date Publication date Assignee Title
US7603097B2 (en) * 2004-12-30 2009-10-13 Valeo Radar Systems, Inc. Vehicle radar sensor assembly
US7680464B2 (en) * 2004-12-30 2010-03-16 Valeo Radar Systems, Inc. Waveguide—printed wiring board (PWB) interconnection
EP1949491B1 (fr) 2005-11-14 2011-07-06 VEGA Grieshaber KG Jonction de guides d'ondes
JP4365852B2 (ja) * 2006-11-30 2009-11-18 株式会社日立製作所 導波管構造
WO2008069714A1 (fr) * 2006-12-05 2008-06-12 Telefonaktiebolaget Lm Ericsson (Publ) Structure de guide d'onde montable en surface
DE602007013825D1 (de) * 2007-11-30 2011-05-19 Ericsson Telefon Ab L M Übergangsanordnung von mikrostreifen zu wellenleiter
EP2224535B1 (fr) * 2007-12-28 2013-12-18 Kyocera Corporation Structure de connexion de ligne de transmission haute fréquence, substrat de câblage, module haute fréquence et dispositif radar
EP2277232B1 (fr) * 2008-04-16 2016-06-08 Telefonaktiebolaget LM Ericsson (publ) Agencement de transition de guide d'ondes
AU2010348252B2 (en) * 2010-03-10 2014-07-31 Huawei Technologies Co., Ltd. Microstrip coupler
US9653796B2 (en) 2013-12-16 2017-05-16 Valeo Radar Systems, Inc. Structure and technique for antenna decoupling in a vehicle mounted sensor
DE102014109120B4 (de) 2014-06-30 2017-04-06 Krohne Messtechnik Gmbh Mikrowellenmodul
KR102674456B1 (ko) * 2017-01-26 2024-06-13 주식회사 케이엠더블유 전송선로-도파관 전이 장치
US10468736B2 (en) 2017-02-08 2019-11-05 Aptiv Technologies Limited Radar assembly with ultra wide band waveguide to substrate integrated waveguide transition
DE102017214871A1 (de) * 2017-08-24 2019-02-28 Astyx Gmbh Übergang von einer Streifenleitung auf einen Hohlleiter
KR101827952B1 (ko) 2017-10-18 2018-02-09 엘아이지넥스원 주식회사 밀리미터파 초소형 레이더 시스템
KR101839045B1 (ko) 2017-10-18 2018-03-15 엘아이지넥스원 주식회사 밀리미터파 시스템에서의 신호 전송용 구조
KR101858585B1 (ko) 2018-03-15 2018-05-16 엘아이지넥스원 주식회사 밀리미터파 시스템의 전력 결합 장치
US11283162B2 (en) * 2019-07-23 2022-03-22 Veoneer Us, Inc. Transitional waveguide structures and related sensor assemblies
US11757166B2 (en) * 2020-11-10 2023-09-12 Aptiv Technologies Limited Surface-mount waveguide for vertical transitions of a printed circuit board
US11616306B2 (en) 2021-03-22 2023-03-28 Aptiv Technologies Limited Apparatus, method and system comprising an air waveguide antenna having a single layer material with air channels therein which is interfaced with a circuit board
CN115207588A (zh) * 2021-04-09 2022-10-18 华为技术有限公司 一种转接装置、电子设备、终端和转接装置的制备方法
EP4084222A1 (fr) 2021-04-30 2022-11-02 Aptiv Technologies Limited Guide d'ondes à charge diélectrique pour les distributions de signaux à faibles pertes et les antennes à petit facteur de forme

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JPH0590807A (ja) * 1991-09-27 1993-04-09 Nissan Motor Co Ltd 導波管・ストリツプ線路変換器
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JP2002111312A (ja) * 2000-09-29 2002-04-12 Hitachi Kokusai Electric Inc 導波管フィルタ

Also Published As

Publication number Publication date
US7336141B2 (en) 2008-02-26
AU2003257396B2 (en) 2008-09-25
AU2003257396A1 (en) 2004-04-19
JP2005539461A (ja) 2005-12-22
CN100391045C (zh) 2008-05-28
ES2312850T3 (es) 2009-03-01
US20060145777A1 (en) 2006-07-06
KR100958790B1 (ko) 2010-05-18
ATE406672T1 (de) 2008-09-15
PL207180B1 (pl) 2010-11-30
BR0306449A (pt) 2004-10-26
DE10243671B3 (de) 2004-03-25
CN1682404A (zh) 2005-10-12
NO20041694L (no) 2004-04-27
CA2499585A1 (fr) 2004-04-08
IL167325A (en) 2010-04-15
PL374171A1 (en) 2005-10-03
DE50310414D1 (de) 2008-10-09
EP1540762A1 (fr) 2005-06-15
JP4145876B2 (ja) 2008-09-03
WO2004030142A1 (fr) 2004-04-08
KR20050057509A (ko) 2005-06-16
CA2499585C (fr) 2011-02-15

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