EP3944410A1 - Structure haute fréquence pourvu de guider d'ondes intégré au substrat et conducteur creux rectangulaire - Google Patents

Structure haute fréquence pourvu de guider d'ondes intégré au substrat et conducteur creux rectangulaire Download PDF

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Publication number
EP3944410A1
EP3944410A1 EP21185769.3A EP21185769A EP3944410A1 EP 3944410 A1 EP3944410 A1 EP 3944410A1 EP 21185769 A EP21185769 A EP 21185769A EP 3944410 A1 EP3944410 A1 EP 3944410A1
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EP
European Patent Office
Prior art keywords
waveguide
substrate
rectangular waveguide
electrically conductive
frequency structure
Prior art date
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Application number
EP21185769.3A
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German (de)
English (en)
Inventor
Steffen Hansen
Nils Pohl
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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Publication of EP3944410A1 publication Critical patent/EP3944410A1/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports

Definitions

  • the present invention relates to a high-frequency structure having a substrate-integrated waveguide and a rectangular waveguide which is vertically coupled to the substrate-integrated waveguide.
  • Substrate-integrated waveguides enable the realization of compact radar sensors in the millimeter wave range. They are formed by a dielectric coated on both sides with a metallization with an electrically conductive connection between the two metallizations for the lateral delimitation of the waveguide and can therefore be implemented very cost-effectively in a printed circuit board.
  • the substrate-integrated waveguide also known under the term SIW (Substrate Integrated Waveguide), can also be implemented in printed circuit boards in which at least one of the two metallizations is thicker than usual (thick metal cladding).
  • a chip to be embedded with an integrated circuit, in particular an MMIC (Monolithic Microwave Integrated Circuit) for generating microwave signals, for which the metallization simultaneously takes over the heat dissipation.
  • MMIC Monitoring Microwave Integrated Circuit
  • a connection between the SIW and the antenna is required, which is preferably via a rectangular waveguide takes place, which must be coupled to the SIW.
  • a stepped structure for impedance matching is formed in the direction of the substrate-integrated waveguide, which is formed by steps in the metallization facing the rectangular waveguide.
  • the differential signal usually generated by an MMIC must first be coupled via two microstrip lines by a coupler into a single-ended microstrip line which is connected to one end of the SIW.
  • Such a connection of the MMIC with the SIW is, for example, the publication of B. Welp et al., "Versatile Dual-Receiver 94-GHz FMCW Radar System with High Output-Power and 26-GHz Tuning Range for High Distance Applications", IEEE Transactions on Microwave Theory and Technics, Vol. 68, No. 3, 2020, pages 1195 to 1211 refer to.
  • the microwave signal generated by the MMIC experiences a significant reduction in bandwidth and power on the way to the antenna.
  • the object of the present invention is to specify a high-frequency structure that enables a differential signal generated by a microwave source, in particular an MMIC, to be coupled into a rectangular waveguide inexpensively and while maintaining a high bandwidth and power.
  • the proposed high-frequency structure features a transition from a substrate-integrated waveguide (SIW) to a rectangular waveguide that is vertically coupled to the substrate-integrated waveguide.
  • the substrate-integrated waveguide is formed in a known manner by a dielectric substrate provided on both sides with an electrically conductive coating, in particular a metallic coating, with an electrically conductive connection, for example with electrical connection vias, between the two electrically conductive coatings for lateral delimitation of the waveguide.
  • the substrate-integrated waveguide has a cavity in the dielectric and the electrically conductive coatings that is open towards the rectangular waveguide and is closed off on a side opposite the rectangular waveguide by a metallic cover, for example a metallic layer or metallic plate is.
  • the proposed high-frequency structure is characterized in that the coupling area to the rectangular waveguide is arranged on the substrate-integrated waveguide in such a way that it separates the substrate-integrated waveguide into two waveguide branches, which enable a differential signal to be coupled in via their ends remote from the coupling area, which in the cavity open towards the rectangular waveguide has a phase difference in the range of 180°, ie for example 180° ⁇ 45°.
  • the one towards the rectangular waveguide In the direction of the two waveguide branches, the open cavity has a stepped structure on both sides for impedance matching, which is formed by steps in the electrically conductive coating facing the rectangular waveguide.
  • This electrically conductive coating for example made of copper, is sufficiently thick for the formation of such steps and preferably has a thickness of ⁇ 200 ⁇ m, particularly preferably ⁇ 1 mm.
  • This configuration of the proposed structure allows a differential signal to be coupled directly into the substrate-integrated waveguide via the two waveguide branches, so that an additional coupler can be dispensed with on the way from an MMIC to the rectangular waveguide, as is required in the prior art for the Coupling of two parallel microstrip lines in a single-ended microstrip line is required.
  • the MMIC usually generates a differential signal. In the present case, this can be coupled directly into the ends of the two waveguide branches of the substrate-integrated waveguide via two microstrip lines. This avoids bandwidth and performance losses, such as those caused by an additional coupler.
  • the stepped design of the transition from the substrate-integrated waveguide to the rectangular waveguide enables a broadband impedance matching at this transition.
  • the suitable number and dimensions of the steps in the electrically conductive coating can be selected for the respective frequency ranges and dimensions of the rectangular waveguide be determined by simulation calculations.
  • the steps themselves can easily be milled into the substrate or the electrically conductive coating from the side opposite the rectangular waveguide. As is the case, for example, in the publication by S. Hansen et al. is described.
  • the proposed high-frequency structure can be used primarily in the field of radar technology for routing a differential signal generated by an MMIC to an antenna, but is not limited to this application.
  • the proposed high-frequency structure is a passive HF structure for vertical coupling of a wave guided in a substrate-integrated waveguide (SIW) into a rectangular waveguide (RWG) standing perpendicular to it. It is a differential waveguide coupling. With this type of coupling, broadband matching is achieved by means of a stepped profile that is milled into the thick metal of the substrate.
  • SIW substrate-integrated waveguide
  • RWG rectangular waveguide
  • figure 1 shows an exemplary embodiment of the proposed high-frequency structure, in which the substrate-integrated waveguide 1 (SIW) and the coupled rectangular waveguide 2 (RWG) can be seen.
  • the substrate-integrated waveguide 1 is formed in a printed circuit board 3 which is provided with a metallic coating on both sides and in which the lower metallization has a thickness of approximately 1 mm.
  • the electrical connections which are realized here by vias 7, but are not limited to such, can be seen between the two metallic coatings that delimit the substrate-integrated waveguide 1 laterally.
  • the figure offers a view of the cavity in the coupling area to the rectangular waveguide 2, in which the stepped height profile for impedance matching can be seen. The required metallic covering of this cavity is therefore omitted in this figure.
  • figure 2 shows this a section along a plane of symmetry of the structure of figure 1 , from which the guide channel of the rectangular waveguide 2 can be seen.
  • the coupling area to the rectangular waveguide 2 is arranged in such a way that it divides the substrate-integrated waveguide 1 into the two waveguide branches to the left and right of the cavity.
  • a differential signal can be injected from both ends of these waveguide branches.
  • the signals arriving at the cavity via the two waveguide branches must have a phase difference in the range of 180°.
  • the differential signal can be coupled into the waveguide 2 in this way.
  • FIG 3 shows another representation of the exemplary embodiment of the proposed high-frequency structure, in which the individual layers can be seen better and the metallic cover 8 of the cavity is also represented.
  • the printed circuit board 3, in which the substrate-integrated waveguide 1 is formed, has a dielectric layer 5, which in the present example is covered by a thin metallization 6 on the upper side and by a thick metallic layer 4 with a thickness of e.g. 1mm coated.
  • This figure shows how the Figures 1 and 2 a two-step profile with the corresponding steps 9.
  • a third contour is given by milled the entire layer structure so that the rectangular waveguide 2 can be flanged on from below. Since the impedance in the waveguide 2 is proportional to the height, a higher-order matching network can be integrated into the printed circuit board 3 by arranging sections of different heights Hi and a length Li that corresponds to approximately a quarter of the wavelength of the guided wave.
  • the number, the height and the length of the steps 9 can be varied as desired, as a result of which the frequency range and the bandwidth are extremely scalable and this structure can therefore be used in a variety of ways.
  • the available design parameters of the length Li and height Hi of the steps 9, as well as the width W1 of the cavity and the substrate-integrated waveguide (W0) are exemplary for a two-step realization in figure 4 shown in top view (top) and in cross section (bottom).
  • this structure can be designed with little effort by initializing the lengths Li with the starting value, which corresponds to a quarter of the wavelength of the guided wave, and then optimizing them for the intended frequency range using optimization algorithms including the heights Hi will.
  • the widths W1 and W0 can be selected in such a way that the lower limit frequency corresponds to that of the waveguide 2 that is flanged on. However, this is not an absolute necessity for the functionality of this high-frequency structure.
  • the distance d between the connection vias 7 and the cavity can be set to 100 ⁇ m, for example in order not to damage the vias 7 when the cavity is created.
  • an MMIC for generating waves in the micrometer wave range can be integrated.
  • Such an MMIC generally generates a differential signal that is then fed via the proposed structure to an antenna that is connected to the rectangular waveguide 2 .
  • figure 5 shows an example of a schematic representation of a signal routing between an MMIC 11 and the proposed high-frequency structure.
  • the differential signal provided by the MMIC 11 is coupled into two microstrip lines 10, each of which is connected to one end of the two waveguide branches of the substrate-integrated waveguide 1 of the proposed high-frequency structure. In this way, the differential signal is coupled in via the two ends of the substrate-integrated waveguide 1 and then routed via the rectangular waveguide 2 to the antenna.
  • a coupler for converting the differential signal from the two microstrip lines 10 into a single microstrip line is no longer required here, so that a bandwidth and power reduction caused thereby is avoided.

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EP21185769.3A 2020-07-23 2021-07-15 Structure haute fréquence pourvu de guider d'ondes intégré au substrat et conducteur creux rectangulaire Withdrawn EP3944410A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102020119495.1A DE102020119495A1 (de) 2020-07-23 2020-07-23 Hochfrequenz-Struktur mit substratintegriertem Wellenleiter und Rechteck-Hohlleiter

Publications (1)

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EP3944410A1 true EP3944410A1 (fr) 2022-01-26

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EP21185769.3A Withdrawn EP3944410A1 (fr) 2020-07-23 2021-07-15 Structure haute fréquence pourvu de guider d'ondes intégré au substrat et conducteur creux rectangulaire

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EP (1) EP3944410A1 (fr)
DE (1) DE102020119495A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114843773A (zh) * 2022-04-28 2022-08-02 南通大学 一种集成式毫米波端射滤波天线

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158408A (ja) * 2001-11-20 2003-05-30 Anritsu Corp 給電器
EP1469548A1 (fr) * 2003-04-18 2004-10-20 Siemens Mobile Communications S.p.A. Duplexeur micro-ondes avec des filtres diélectriques, un jonction T, deux portes coaxiales et un porte de guide d'ondes
US20110267153A1 (en) * 2009-02-27 2011-11-03 Mitsubishi Electric Corporation Waveguide-microstrip line converter

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014112467B4 (de) 2014-08-29 2017-03-30 Lisa Dräxlmaier GmbH Speisenetzwerk für antennensysteme
KR101621480B1 (ko) 2014-10-16 2016-05-16 현대모비스 주식회사 도파관 대 유전체 도파관의 천이 구조

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158408A (ja) * 2001-11-20 2003-05-30 Anritsu Corp 給電器
EP1469548A1 (fr) * 2003-04-18 2004-10-20 Siemens Mobile Communications S.p.A. Duplexeur micro-ondes avec des filtres diélectriques, un jonction T, deux portes coaxiales et un porte de guide d'ondes
US20110267153A1 (en) * 2009-02-27 2011-11-03 Mitsubishi Electric Corporation Waveguide-microstrip line converter

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
B. WELP ET AL.: "Versatile Dual-Receiver 94-GHz FMCW Radarsystem with High Output-Power and 26-GHz Tuning Range for High Distance Applications", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNICS, vol. 68, no. 3, 2020, pages 1195 - 1211, XP011775578, DOI: 10.1109/TMTT.2019.2955127
C. SCHULZ ET AL.: "A broadband circular waveguideto-microstrip transition for an 80 GHz FMCW radar system", PROCEEDINGS OF THE ASIA-PACIFIC MICROWAVE CONFERENCE, 2011, pages 391 - 394, XP032152653
HANSEN STEFFEN ET AL: "A W-Band Stepped Impedance Transformer Transition from SIW to RWG for Thin Single Layer Substrates with Thick Metal Cladding", 2019 49TH EUROPEAN MICROWAVE CONFERENCE (EUMC), EUROPEAN MICROWAVE ASSOCIATION (EUMA), 1 October 2019 (2019-10-01), pages 352 - 355, XP033641799, DOI: 10.23919/EUMC.2019.8910721 *
S. HANSEN ET AL.: "A W-Band Stepped Impedance Transformer Transition from SIW to RWG for Thin Single Layer Substrates with Thick Metal Cladding", PROCEEDINGS OF THE 49TH EUROPEAN MICROWAVE CONFERENCE, 2019, pages 352 - 355, XP033641799, DOI: 10.23919/EuMC.2019.8910721

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114843773A (zh) * 2022-04-28 2022-08-02 南通大学 一种集成式毫米波端射滤波天线
CN114843773B (zh) * 2022-04-28 2023-09-12 南通大学 一种集成式毫米波端射滤波天线

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