EP1540762B1 - Junction between a microstrip line and a waveguide - Google Patents

Junction between a microstrip line and a waveguide Download PDF

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Publication number
EP1540762B1
EP1540762B1 EP20030798047 EP03798047A EP1540762B1 EP 1540762 B1 EP1540762 B1 EP 1540762B1 EP 20030798047 EP20030798047 EP 20030798047 EP 03798047 A EP03798047 A EP 03798047A EP 1540762 B1 EP1540762 B1 EP 1540762B1
Authority
EP
European Patent Office
Prior art keywords
waveguide
substrate
opening
characterized
ls
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP20030798047
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German (de)
French (fr)
Other versions
EP1540762A1 (en
Inventor
Thomas Johannes MÜLLER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EADS Deutschland GmbH
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EADS Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE10243671 priority Critical
Priority to DE2002143671 priority patent/DE10243671B3/en
Application filed by EADS Deutschland GmbH filed Critical EADS Deutschland GmbH
Priority to PCT/DE2003/002553 priority patent/WO2004030142A1/en
Publication of EP1540762A1 publication Critical patent/EP1540762A1/en
Application granted granted Critical
Publication of EP1540762B1 publication Critical patent/EP1540762B1/en
Application status is Expired - Fee Related legal-status Critical
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
    • H01P5/107Hollow-waveguide/strip-line transitions

Abstract

The invention relates to a configuration for a junction between a microstrip line and a waveguide, comprising: a microstrip line (ML), which is placed on the top side of a dielectric substrate (S); a waveguide, which is placed on the top side of the substrate (S) and which has an opening (OB) on at least one face and on a step-like structure (ST) provided on a lateral wall in the vicinity of the opening (OB) while, in at least one part (ST1), being conductively connected to the microstrip line (ML), whereby a lateral wall of the waveguide is a metallized layer (LS) provided on the substrate (S); a recess (A), which is made in the metallized layer (LS) and into which the microstrip line (ML) protrudes; a rear side metallization (RM) provided on the rear side of the substrate (S), and; electrically conductive through connections (VH) between the metallized layer (LS) on the top side of the substrate (S) and the rear side metallization (RM) that surround the recess (A).

Description

  • The invention relates to an arrangement according to claim 1.
  • In many applications of ultra-high frequency technology, especially in millimeter wave technology, it is necessary to couple a guided in a microstrip line wave in a waveguide and vice versa. Here a possible reflection and loss-free transition is desired. This transition provides, within a limited frequency range, for the impedances between the waveguide and the stripline to be matched and for the field pattern of one waveguide type to be transferred to the field pattern of the other waveguide type.
  • Microstrip line waveguide junctions are made, for example DE 197 41 944 A1 or US 6,265,950 B1 known.
  • In DE 197 41 944 A1 an arrangement is described in which the microstrip line is applied to the top side of the substrate ( Fig. 1 ). The waveguide HL is attached with an end face on the underside of the substrate S. The substrate S has in the region of the waveguide HL on an opening D, which corresponds substantially to the cross section of the waveguide HL. At the microstrip line ML, a coupling element (not shown) is arranged, which projects into the opening D. The aperture D is on the upper side of the substrate S of a shield cap SK surrounded, which is electrically conductively connected by means of electrically conductive boreholes (via-holes) VH with the present on the underside of the substrate S metallization RM.
  • This arrangement has the disadvantage that the circuit board must be mounted conductive on a pre-processed, the waveguide HL-containing support plate. In addition, a precisely manufactured, mechanically accurately positioned and conductive applied cap SK is necessary. The preparation of this arrangement is time-consuming and costly due to the large number of different processing steps. Further disadvantages arise from high space requirements due to the arranged outside the circuit board waveguide.
  • At the in US 6,265,950 B1 described arrangement for a transition between a microstrip line and a waveguide protrudes into the substrate with the microstrip line applied thereto in the waveguide. A disadvantage of this arrangement is the integration of the waveguide in a printed circuit board environment. The waveguide can only be arranged on the boundary surfaces of the printed circuit board (substrate). An integration of the waveguide within the circuit board is not possible for reasons of costly preparation of the circuit board.
  • In the article of Sano et al.: "A transition from microstrip to dielectric-filled rectangular waveguide to surface mounting" 2002 IEEE MTT-S International Microwave Symposium Digest (IMS 2002) Seattle, WA, June 2-7, 2002 . IEEE MTT-S International Microwave Symposium, New York, NY: IEEE, US, Vol.2 of 4,2.June 2002, pages 813-816, XP001109917, ISBN: 0-7803-7239-5 an arrangement for a transition between a microstrip line and a waveguide according to the preamble of claim 1 is known. The use of electrically conductive vias (via holes) between the metallized layer on top of a substrate and the backside metallization described in the article is disclosed in US Pat EP 0 920 071 A2 described in detail.
  • Out JP 05283915 a further transition between a microstrip line and a waveguide is known in which the transition to improve the Match between microstrip line and waveguide along the longitudinal extent of the waveguide has a plurality of stages of equal width.
  • It is an object of the invention to provide an arrangement for a transition between a microstrip line and a waveguide, which is simple and inexpensive to implement and requires a small space requirement and in which the matching of the impedance between microstrip line and waveguide is improved.
  • This object is achieved by the arrangement with the features according to claim 1. Advantageous embodiments of the arrangement are the subject of dependent claims.
  • An advantage of the arrangement according to the invention is the simple and cost-effective production of the microstrip waveguide transition. In order to realize the transition, in contrast to the prior art, fewer components are required. Another advantage is that the implementation of the waveguide in the PCB environment is not like in US 6,265,950 must be done on the edge of the circuit board, but that it can be done anywhere on the circuit board. The arrangement according to the invention thus has a small space requirement.
  • Advantageously, the waveguide is an SMD (surface mount device) component. The waveguide part is placed in a simple assembly step from above on the circuit board and conductively connected. The connection of the waveguide to the transition can thus be integrated into known assembly methods. As a result, manufacturing steps are saved, whereby the production costs and time are reduced.
  • The invention and further advantageous embodiments of the arrangement according to the invention are explained in more detail below with reference to drawings. Show it:
  • Fig. 1
    a longitudinal section through an arrangement for a microstrip waveguide transition according to the prior art,
    Fig. 2
    in plan view the metallized layer on top of the substrate,
    Fig. 3
    a perspective view of an exemplary stepped inner structure of the SMD component,
    Fig. 4
    a longitudinal section through an inventive arrangement for a microstrip waveguide transition,
    Fig. 5
    a first cross section through the area 3 in FIG Fig. 4 .
    Fig. 6
    a second cross-section through the area 4 in FIG Fig. 4 .
    Fig. 7
    a third cross-section through the area 5 in FIG Fig. 4 .
    Fig. 8
    a fourth cross-section through the area 6 in FIG Fig. 4 ,
    Fig. 9
    a further advantageous embodiment of the microstrip waveguide transition according to the invention.
  • Fig. 2 shows in plan view the metallized layer of the substrate. This metallized layer is also referred to as the landing structure for the microstrip waveguide transition. The landing structure LS has a recess A with an opening OZ. Through this opening OZ extends the microstrip line ML, which ends within the recess A. The recess A is surrounded by plated-through holes VH, also referred to as via holes. These vias VH are electrically conductive openings of the substrate, which connects the landing structure LS with the back side metallization (not shown) on the rear side of the substrate. The distance between the via holes VH to each other is so narrow, within the useful frequency range, the radiation of the electromagnetic wave through the intermediate spaces is small. The via holes VH can advantageously extend in a plurality of mutually parallel rows to reduce the radiation.
  • Fig. 3 shows a perspective view of an exemplary stepped inner structure of the SMD component. The component B has corresponding to the opening in the recess of the landing structure (see. Fig. 2 ) also has an opening OB. In the longitudinal direction of the component, a stepped structure ST1, ST is formed at a predeterminable distance from the opening OB on the side wall. The side wall of the component B which includes the step structure ST1 and ST lies opposite the substrate surface after assembly of the landing structure LS (cf. Fig. 4 ). The waveguide component B to be applied is opened downwards (in the direction of the substrate) before assembly and is therefore still incomplete. The still missing side wall is formed by the landing structure LS embodied on the substrate.
  • The inventive arrangement is further not by the number of in FIG. 3 or FIG. 4 limited levels shown. The structure ST can be adapted in terms of number of stages, length and width of the individual stages to the respective requirements of the transition.
  • In the illustration shown, the step designated by the reference symbol ST1 has such a height that in the form-fitting application of the component B to the landing structure according to FIG Fig. 2 the stage ST1 rests directly on the microstrip line ML and thus produces an electrically conductive connection between the microstrip line ML and the component B.
  • Fig. 4 shows a longitudinal section of an inventive arrangement of a microstrip waveguide transition. Here, the component B is according to Fig. 3 positively on the landing structure of the substrate S according to Fig. 3 applied. The component B is thereby in particular applied to the substrate such that an electrically conductive connection is formed between the landing structure and the component B.
  • On the underside, the substrate S has a substantially continuous metallic coating RM. The waveguide region is identified by the reference HB in the illustration. The transition region is identified by the reference symbol UB.
  • The microstrip waveguide transition according to the invention works according to the following principle:
    The high frequency signal outside the waveguide HL is passed through a microstrip line ML with the impedance Z 0 (area 1). The high-frequency signal within the waveguide HL is guided in the form of the TE 10 waveguide fundamental mode. The transition UB gradually converts the field pattern of the microstrip mode into the field pattern of the waveguide mode. At the same time, the transition UB by the gradations of the component B with respect to the characteristic impedance transforms and ensures in the useful frequency range for an adjustment of the impedance Z 0 to the impedance Z HL of the waveguide HL. This allows a low-loss and low-reflection transition between the two waveguides.
  • The microstrip line ML first leads into region 2 of a so-called cutoff channel. This channel is formed by the component B, the backside metallization RM and the via holes VH, which provide a conductive connection between component B and backside metallization RM. The width of the cutoff channel is chosen so that in this area 2 except the signal-carrying microstrip mode no additional wave type is propagatable. The length of the channel determines the attenuation of the unwanted waveguide mode that can not propagate and prevents radiation into the free space (area 1).
  • In area 3, the microstrip line ML is in a kind of partially filled waveguide. The waveguide is formed from the component B, the backside metallization RM and the via holes VH (FIG. Fig. 5 ). In area 4, the step-shaped structure of the component B is connected to the microstrip line ML ( Fig. 6 ). The side walls of the component B are conductively connected to the rear side metallization RM of the substrate S by a so-called row of screens made of via holes VH.
    This forms a dielectrically loaded ridge waveguide. The signal energy is concentrated between the backside metallization RM and the land formed by the microstrip line ML and the step ST1 of the device B.
  • In comparison to region 4, the height of the step structure ST contained in the component B decreases in the region 5, so that a defined air gap L arises between the substrate material and the step structure ST during the form-fitting assembly of the component B onto the landing structure LS of the substrate S (FIG. Fig. 7 ). The side walls of the component B are conductively connected to the backside metallization RM through via holes VH. This forms a partially filled dielectrically loaded ridge waveguide.
  • According to the invention, the width of the step extends transversely to the longitudinal direction of the waveguide HL to the field image from area 4 gradually to the field image of the waveguide mode to match (area 6). The length, width and height of the stages are chosen so that the impedance of the microstrip mode Z 0 is transformed into the impedance of the waveguide mode Z HL at the end of region 6. If necessary, the number of stages in the structure of the component B in the region 5 can also be increased.
  • Area 6 shows the waveguide area HB. The component B forms the side walls and the lid of the waveguide HL. The waveguide bottom is formed by the landing structure LS of the substrate S, ie in comparison to region 5 there is no dielectric filling in the waveguide HL.
  • One or more transverse to the propagation direction of the waveguide wave screen rows of via holes VH in the transition region between area 5 and Be rich 6 realize the transition between the partially dielectric filled waveguide and the purely air-filled waveguide. At the same time, the coupling of the signal between the landing structure LS and the rear-side metallization is prevented by these screen rows.
  • In region 6, a step structure (analogous to the step structure in region 5) can optionally also be present in the cap top.
    The length and height of these stages are chosen to be analogous to region 5 such that, in combination with the other regions, the impedance of the microstrip mode Z 0 is transformed into the impedance Z HL of the waveguide mode present at the end of region 6.
  • In Fig. 9 a further advantageous embodiment of the microstrip waveguide transition according to the invention is shown. With this embodiment, it is possible to realize a simple and inexpensive waveguide transition, in which the high-frequency signal can be coupled through the substrate S down through the continuous hollow conductor opening DB contained in the substrate. The waveguide opening DB advantageously has electrically conductive inner walls (IW). The component B advantageously has a step shape ST on the side wall opposite the waveguide opening DB in the region of the opening DB. With this step shape ST, the waveguide wave is deflected by 90 ° from the waveguide region HB of the component B into the waveguide opening DB of the substrate S. On the underside of the substrate S, for example, a further waveguide or a radiation element may be arranged in the region of the waveguide opening DB. In this example in Fig. 9 is at the back side metallization RM another carrier material TP, eg a one to multi-layer printed circuit board or a metal support attached. The advantage of this arrangement is compared to DE 197 41 944 A1 in the simplified and less expensive construction of the substrate S and the carrier material TP. The waveguide opening is milled throughout and the inner walls are metallized by electroplating. Both steps are common in printed circuit board technology, easy to carry out standard procedures.

Claims (7)

  1. Arrangement for a junction between a microstripline and a waveguide, comprising
    - a microstripline (ML) which is fitted on an upper face of a dielectric substrate (S),
    - a waveguide which is fitted on the upper face of the substrate (S) and has an opening (OB) on at least one end surface, wherein one side wall of the waveguide is a metallized layer (LS) formed on the substrate (S),
    - a cutout (A) which is formed in the metallized layer (LS) and into which the microstripline (ML) projects through the opening (OB) into the waveguide,
    - rear-face metallization (RM) which is formed on a rear face of the substrate (S), and
    - electrically conductive via holes (VH) between the metallized layer (LS) on the upper face of the substrate (S) and the rear-face metallization (RM), which surround the cutout (A),
    characterized in that
    a structure (ST) which is in the form of a step or steps and is conductively connected in at least one part (ST1) to the microstripline (ML), is formed on a side wall, opposite the upper face of the substrate (S), of the waveguide in the region of the opening (OB) of the waveguide, with the steps in the stepped structure (ST) having a width which increases in the longitudinal direction of the waveguide away from the junction.
  2. Arrangement according to Claim 1, characterized in that the waveguide is a surface mounted device.
  3. Arrangement according to Claim 1 or 2, characterized in that the structure (ST) which is in the form of a step or steps is formed on that side wall of the waveguide which is opposite the cutout (A).
  4. Arrangement according to one of the preceding claims, characterized in that the via holes (VH) run in a number of rows which are arranged parallel to one another.
  5. Arrangement according to one of the preceding claims, characterized in that the substrate (S) has a waveguide opening (DB) in the area of the metallized layer (LS) on the upper face of the substrate (S).
  6. Arrangement according to Claim 4, characterized in that the inner surface of the waveguide opening (DB) is electrically conductive.
  7. Arrangement according to Claim 4 or 5, characterized in that that side wall of the waveguide which is opposite the upper face of the substrate has a structure (ST), which is in the form of a step or steps, in the area of the waveguide opening (DB).
EP20030798047 2002-09-20 2003-07-30 Junction between a microstrip line and a waveguide Expired - Fee Related EP1540762B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE10243671 2002-09-20
DE2002143671 DE10243671B3 (en) 2002-09-20 2002-09-20 Arrangement for transition between microstrip conductor, hollow conductor has one hollow conductor side wall as metallised coating on substrate with opening into which microstrip conductor protrudes
PCT/DE2003/002553 WO2004030142A1 (en) 2002-09-20 2003-07-30 Junction between a microstrip line and a waveguide

Publications (2)

Publication Number Publication Date
EP1540762A1 EP1540762A1 (en) 2005-06-15
EP1540762B1 true EP1540762B1 (en) 2008-08-27

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EP20030798047 Expired - Fee Related EP1540762B1 (en) 2002-09-20 2003-07-30 Junction between a microstrip line and a waveguide

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US (1) US7336141B2 (en)
EP (1) EP1540762B1 (en)
JP (1) JP4145876B2 (en)
KR (1) KR100958790B1 (en)
CN (1) CN100391045C (en)
AT (1) AT406672T (en)
AU (1) AU2003257396B2 (en)
BR (1) BR0306449A (en)
CA (1) CA2499585C (en)
DE (2) DE10243671B3 (en)
ES (1) ES2312850T3 (en)
IL (1) IL167325A (en)
NO (1) NO20041694L (en)
PL (1) PL207180B1 (en)
WO (1) WO2004030142A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7603097B2 (en) * 2004-12-30 2009-10-13 Valeo Radar Systems, Inc. Vehicle radar sensor assembly
US7680464B2 (en) * 2004-12-30 2010-03-16 Valeo Radar Systems, Inc. Waveguide—printed wiring board (PWB) interconnection
EP1949491B1 (en) 2005-11-14 2011-07-06 VEGA Grieshaber KG Waveguide junction
WO2008069714A1 (en) * 2006-12-05 2008-06-12 Telefonaktiebolaget Lm Ericsson (Publ) A surface-mountable waveguide arrangement
AT504957T (en) * 2007-11-30 2011-04-15 Ericsson Telefon Ab L M Transition of micro strips to wave leader
WO2009084697A1 (en) * 2007-12-28 2009-07-09 Kyocera Corporation High-frequency transmission line connection structure, wiring substrate, high-frequency module, and radar device
US8598961B2 (en) * 2008-04-16 2013-12-03 Telefonaktiebolaget L M Ericsson (Publ) Waveguide transition for connecting U-shaped surface mounted waveguide parts through a dielectric carrier
WO2011109939A1 (en) * 2010-03-10 2011-09-15 Huawei Technologies Co., Ltd. Microstrip coupler
US9653796B2 (en) 2013-12-16 2017-05-16 Valeo Radar Systems, Inc. Structure and technique for antenna decoupling in a vehicle mounted sensor
DE102014109120B4 (en) 2014-06-30 2017-04-06 Krohne Messtechnik Gmbh microwave module
DE102017214871A1 (en) * 2017-08-24 2019-02-28 Astyx Gmbh Transition from a stripline to a waveguide
KR101839045B1 (en) 2017-10-18 2018-03-15 엘아이지넥스원 주식회사 Structure for transmitting signal in millimeter wave system
KR101827952B1 (en) 2017-10-18 2018-02-09 엘아이지넥스원 주식회사 Millimeter wave compact radar system
KR101858585B1 (en) 2018-03-15 2018-05-16 엘아이지넥스원 주식회사 Apparatus for combining power in millimeter wave system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754239A (en) * 1986-12-19 1988-06-28 The United States Of America As Represented By The Secretary Of The Air Force Waveguide to stripline transition assembly
JPH0590807A (en) * 1991-09-27 1993-04-09 Nissan Motor Co Ltd Waveguide/strip line converter
JP2682589B2 (en) * 1992-03-10 1997-11-26 三菱電機株式会社 Coaxial microstrip line transducer
JPH05283915A (en) * 1992-03-31 1993-10-29 Toshiba Corp Waveguide-microstrip line converter
JPH08162810A (en) * 1994-12-08 1996-06-21 Nec Corp Strip line waveguide conversion circuit
DE19636890C1 (en) * 1996-09-11 1998-02-12 Bosch Gmbh Robert Transition from a waveguide to a stripline
DE19741944A1 (en) * 1997-09-23 1999-03-25 Daimler Benz Aerospace Ag Microstrip-wave-guide junction
US5982250A (en) * 1997-11-26 1999-11-09 Twr Inc. Millimeter-wave LTCC package
JP2002111312A (en) * 2000-09-29 2002-04-12 Hitachi Kokusai Electric Inc Waveguide filter
JP5090807B2 (en) * 2007-07-10 2012-12-05 株式会社トプコン Surgical microscope equipment
FR2919610B1 (en) * 2007-08-02 2009-10-16 Sanofi Aventis Sa Tricyclic n-heteroaryl-carboxamide derivatives, their preparation and their therapeutic use
JP5283915B2 (en) * 2008-01-30 2013-09-04 株式会社三共 Game machine

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Publication number Publication date
JP4145876B2 (en) 2008-09-03
PL207180B1 (en) 2010-11-30
JP2005539461A (en) 2005-12-22
AU2003257396A1 (en) 2004-04-19
ES2312850T3 (en) 2009-03-01
IL167325A (en) 2010-04-15
BR0306449A (en) 2004-10-26
KR20050057509A (en) 2005-06-16
KR100958790B1 (en) 2010-05-18
CA2499585A1 (en) 2004-04-08
WO2004030142A1 (en) 2004-04-08
CN100391045C (en) 2008-05-28
NO20041694L (en) 2004-04-27
CA2499585C (en) 2011-02-15
PL374171A1 (en) 2005-10-03
US7336141B2 (en) 2008-02-26
AT406672T (en) 2008-09-15
EP1540762A1 (en) 2005-06-15
DE50310414D1 (en) 2008-10-09
AU2003257396B2 (en) 2008-09-25
DE10243671B3 (en) 2004-03-25
US20060145777A1 (en) 2006-07-06
CN1682404A (en) 2005-10-12

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