EP1454345A1 - Integriertes halbleiterprodukt mit metall-isolator-metall-kondensator - Google Patents
Integriertes halbleiterprodukt mit metall-isolator-metall-kondensatorInfo
- Publication number
- EP1454345A1 EP1454345A1 EP02792906A EP02792906A EP1454345A1 EP 1454345 A1 EP1454345 A1 EP 1454345A1 EP 02792906 A EP02792906 A EP 02792906A EP 02792906 A EP02792906 A EP 02792906A EP 1454345 A1 EP1454345 A1 EP 1454345A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- layer
- dielectric
- metal
- semiconductor product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Definitions
- the present invention relates to an integrated semiconductor product with conductor tracks and a metal-insulator-metal capacitor.
- the present invention relates in particular to an integrated semiconductor product with conductor tracks which have aluminum as an essential component.
- High-frequency circuits in BIPOLAR, BICMOS and CMOS technology require integrated capacitors with high voltage linearity, precisely adjustable capacitance values and, above all, low parasitic capacitances.
- the conventional MOS or MIS capacitors used to date have insufficient voltage linearity due to voltage-induced space charge zones. The short distance to the substrate also brings with it numerous parasitic capacitances.
- MIM capacitors metal-insulator-metal capacitors
- the top electrode is also structured with the aid of top electrode etching, which has to be stopped in the dielectric of the capacitor. For this reason, these methods require a dielectric layer with a sufficient thickness of at least 60 nm.
- FIG. 4 The starting point for the production of a MIM capacitor according to the prior art is the stack shown in FIG. 4.
- An adhesive layer 2 made of Ti, a conductor track 3 made of Al and an anti-reflective coating (ARC) layer 5 made of Ti / TiN is deposited on a substrate 1.
- This stack also functions as a first electrode.
- a dielectric layer 6 is applied to this stack.
- the metal stack for the second electrode is deposited over the dielectric layer 6. It consists of two TiN (Ti) layers 8, 10 and an Al layer 9 lying between them.
- FIG. 5 shows a process stage in which the second electrode 8, 9, 10 and the dielectric 6 have already been structured. As can be seen from the etching edge 16, the dielectric 6 serves as an etching stop in the area outside the second electrode 8, 9, 10.
- the area-specific capacitance of such known capacitors is around 1 fF / ⁇ m 2 ; however, a multiple of this value is required for future high-frequency applications. borrowed.
- the area-specific capacitance of a capacitor is essentially determined by the thickness of the dielectric separation layer and the value of the dielectric constant. An increase in the area-specific capacitance of a capacitor can therefore be achieved by using dielectrics with a high dielectric constant (> 8). Furthermore, insulation layers that are thinner than 60 nm also lead to an increase in the area-specific capacitance.
- the object of the invention is to create an improved integrated semiconductor product with conductor tracks and a metal-insulator-metal capacitor and to specify a method for its production.
- an integrated semiconductor product with conductor tracks, which have aluminum as an essential component, is provided, which has at least one metal
- Insulator metal capacitor having a first electrode, a dielectric layer and a second electrode.
- the dielectric layer is arranged in an opening of a dielectric auxiliary layer arranged above the first electrode.
- a method for producing an integrated semiconductor product with conductor tracks which have aluminum as an essential component and at least one metal-insulator-metal capacitor which has a first electrode, a dielectric layer and a second electrode includes, provided.
- the process includes the following steps:
- the first electrode is produced in a layer which is also provided as a layer for conductor tracks;
- the concept presented here is particularly, but not exclusively, suitable for integrating MIM capacitors with thin dielectrics without significantly changing the reliability of the other metal tracks.
- the reliability of the other metal tracks remains essentially unchanged, since in particular there are no residues of the dielectric capacitor layer on the other metal tracks.
- the method according to the present invention can be implemented relatively uncritically with regard to the individual process steps and allows greater freedom in the selection of materials and their thickness.
- the method according to the present invention has the advantage that etching can be carried out significantly more easily than according to the prior art, since no etching through of the remaining dielectric capacitor layer over the metal tracks is necessary.
- the metal-insulator-metal capacitor has a first electrode which is formed in a metal level for conductor tracks. Since the dielectric interlayer and the If the metallization layer for the second electrode can be kept thin, the metal-insulator-metal capacitor can be integrated into an existing concept for producing an integrated semiconductor product with passive semiconductor products without great difficulty.
- the metal-insulator-metal capacitor is expediently produced by applying a metal layer for conductor tracks to a substrate.
- This layer can in particular also be a liner layer and a
- a dielectric auxiliary layer is subsequently deposited onto the metal layer for conductor tracks. It serves as a partial sacrificial layer and does not play the role of the MIM dielectric, but becomes part of the later applied intermetallic dielectric (IMD).
- IMD intermetallic dielectric
- the dielectric layer is removed at those points where the integration of a MIM capacitor is provided. It is particularly preferred if a corresponding etching stops selectively on the lower electrode.
- a dielectric layer of freely selectable material and of any thickness is deposited on the correspondingly structured surface. The materials that form the second electrode are then applied and structured accordingly.
- a conductive barrier is applied to the first electrode before step (d). It is particularly preferred if the conductive barrier is selectively applied only to the exposed first electrode.
- Figure 1 shows a section of a cross section through an integrated semiconductor product containing a metal-insulator-metal capacitor, according to an embodiment of the invention.
- FIG. 2 shows a section of a cross section through a metal web stack, as used for the first electrode of a MIM capacitor according to an exemplary embodiment of the present invention, and a dielectric auxiliary layer deposited on the stack, the dielectric auxiliary layer already above the first electrode is open.
- Figure 3 shows a section of a cross section through an integrated semiconductor product with an integrated metal-insulator-metal capacitor according to an embodiment of the present invention.
- Figure 4 shows a section of a cross section through a layer stack, as used for the production of a MIM capacitor according to the prior art.
- Figure 5 shows the detail of Figure 4 after structuring of the second electrode.
- FIG. 2 shows a metal track stack with an adhesive layer 2 made of Ti, a conductor track 3 made of AlCu and an anti-reflective coating (ARG) layer 5, as is also the case in the corresponding case
- the conductor track 3 should also act as the lower MIM electrode.
- a dielectric auxiliary layer 6 made of, for example, SiO 2 or Si 3 N and having a thickness of approximately 50-100 nm using known, metallization-compatible processes. It serves as a partial sacrificial layer and does not play the role of a MIM dielectric but becomes part of the later applied intermetallic dielectric (IMD).
- IMD intermetallic dielectric
- FIG. 3 shows the MIM capacitor after the deposition and structuring of the MIM dielectric 7 and the upper electrode 8, 9, 10.
- the dielectric 7 can be freely selected and can be deposited in any thickness.
- a conductive barrier (not shown) can also be applied to the first electrode. It is particularly preferred if the conductive barrier is selectively applied only to the exposed first electrode.
- an integration path according to this exemplary embodiment does not impose any minimum requirements on the thickness, etching behavior and other properties of the dielectric layer 7, any method for its production can be used, such as CVD, PECVD, MOCVD, and PVD, as long as the layers can be produced at temperatures below 00 ° C.
- the dielectric layer 7 can also be produced on the lower electrode by means of an oxidation of the surface of the lower electrode or by means of the oxidation of a layer provided for this purpose (for example TaN).
- ALD atomic layer deposition
- This process allows extremely thin layers to be produced by atomic layer deposition.
- the method according to the invention opens up access to condensate Ren with specific capacities from 3 fF / pm 2 to well over 10 fF / pm 2 , which could not be produced with sufficient quality reproducible with the previous approaches.
- Ideal growth conditions for dielectrics to be deposited by means of ALD are obtained if the substrate is slightly oxidized on the surface after opening the sacrificial layer 6 in an oxygen-containing atmosphere.
- the native oxide thus produced in the ARC layer 5 offers similar good prerequisites for the deposition of any oxides as the neighboring dielectric auxiliary layer 6, so that the desired oxide layers grow spontaneously, reproducibly, densely and with the highest quality.
- the materials for the upper electrode are then applied. These in turn include conductive barriers 8, 10, which may include TiN, for example.
- conductive barriers 8, 10 which may include TiN, for example.
- the topology produced in the first dielectric layer 6 is relatively small: the edge length of the lower electrodes is greater than 1 ⁇ m and the step height is approximately 50-100 nm.
- the topology can therefore be covered well by the chosen deposition method.
- the stack is then etched from the upper electrode 8, 9, 10 of the dielectric layer 7 and the auxiliary layer 6.
- An upper intermetallic dielectric 11 is then deposited. Any residues of the dielectric auxiliary layer 6 now simply become part of this IMD 11.
- vias 12 are formed which are connected at their upper end to upper conductor tracks 13. These upper conductor tracks 13 are in turn embedded in an intermetallic dielectric 14.
- the via etching can be carried out much more easily than according to the prior art, since it is not necessary to etch through the remaining dielectric capacitor layer above the metal tracks.
- the metallization and plate capacitor materials described in the above exemplary embodiment are exemplary and are not limited to these.
- all conductive materials such as Si, W, Cu, Ag, Au, Ti, Pt and alloys thereof can be used as conductor tracks.
- Ti and TiN, TiW, W, WN X with 0 ⁇ x ⁇ 2, Ta, TaN, suicides and carbides are particularly suitable as alternative barriers or liner layers. All of the materials mentioned and their combinations can be used as electrodes.
- the entire range of materials with a significantly higher k is available, in particular Al 2 0 3 , Zr0 2 , Hf0 2 , Ta 2 0 5 , La 2 0 3 , Ti0 2 as well as the respective mixed oxides, oxynitrides and silicates from them, SrTi0 3 , Ba x Sr ! _ x Ti0 3 with O ⁇ x ⁇ l (BST) and PbZr x Ti X - x 0 3 with O ⁇ x ⁇ l (PZT).
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10161286A DE10161286A1 (de) | 2001-12-13 | 2001-12-13 | Integriertes Halbleiterprodukt mit Metall-Isolator-Metall-Kondensator |
DE10161286 | 2001-12-13 | ||
PCT/EP2002/013804 WO2003054934A1 (de) | 2001-12-13 | 2002-12-05 | Integriertes halbleiterprodukt mit metall-isolator-metall-kondensator |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1454345A1 true EP1454345A1 (de) | 2004-09-08 |
Family
ID=7709103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02792906A Ceased EP1454345A1 (de) | 2001-12-13 | 2002-12-05 | Integriertes halbleiterprodukt mit metall-isolator-metall-kondensator |
Country Status (7)
Country | Link |
---|---|
US (1) | US7233053B2 (de) |
EP (1) | EP1454345A1 (de) |
CN (1) | CN100576441C (de) |
AU (1) | AU2002358618A1 (de) |
DE (1) | DE10161286A1 (de) |
TW (1) | TW200301963A (de) |
WO (1) | WO2003054934A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7112507B2 (en) | 2003-11-24 | 2006-09-26 | Infineon Technologies Ag | MIM capacitor structure and method of fabrication |
US7582549B2 (en) * | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
KR100824627B1 (ko) * | 2006-12-22 | 2008-04-25 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
US7510944B1 (en) * | 2007-05-10 | 2009-03-31 | National Semiconductor Corporation | Method of forming a MIM capacitor |
US7989919B2 (en) * | 2009-06-03 | 2011-08-02 | Infineon Technologies Ag | Capacitor arrangement and method for making same |
US8445353B1 (en) | 2009-09-29 | 2013-05-21 | National Semiconductor Corporation | Method for integrating MIM capacitor and thin film resistor in modular two layer metal process and corresponding device |
US10515949B2 (en) | 2013-10-17 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit and manufacturing method thereof |
US10818544B2 (en) * | 2017-09-27 | 2020-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to enhance electrode adhesion stability |
CN111668186A (zh) * | 2020-06-08 | 2020-09-15 | 矽力杰半导体技术(杭州)有限公司 | 半导体器件及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5825073A (en) * | 1994-12-09 | 1998-10-20 | Lucent Technologies, Inc. | Electronic component for an integrated circuit |
JPH11233723A (ja) * | 1998-02-13 | 1999-08-27 | Sony Corp | 電子素子およびその製造方法ならびに誘電体キャパシタおよびその製造方法ならびに光学素子およびその製造方法 |
US6086951A (en) * | 1999-06-14 | 2000-07-11 | United Microelectronics Corp. | Method for forming metallic capacitor |
JP2000228497A (ja) * | 1999-02-04 | 2000-08-15 | Samsung Electronics Co Ltd | 半導体集積回路のキャパシタ製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4971924A (en) * | 1985-05-01 | 1990-11-20 | Texas Instruments Incorporated | Metal plate capacitor and method for making the same |
US5674771A (en) * | 1992-04-20 | 1997-10-07 | Nippon Telegraph And Telephone Corporation | Capacitor and method of manufacturing the same |
US5926359A (en) * | 1996-04-01 | 1999-07-20 | International Business Machines Corporation | Metal-insulator-metal capacitor |
KR100267087B1 (en) * | 1997-01-07 | 2000-10-02 | Samsung Electronics Co Ltd | Manufacturing method of capacitor device |
US6184551B1 (en) * | 1997-10-24 | 2001-02-06 | Samsung Electronics Co., Ltd | Method of forming integrated circuit capacitors having electrodes therein that comprise conductive plugs |
US6025226A (en) * | 1998-01-15 | 2000-02-15 | International Business Machines Corporation | Method of forming a capacitor and a capacitor formed using the method |
US6291337B1 (en) * | 1998-02-20 | 2001-09-18 | Stmicroelectronics, Inc. | Elimination of cracks generated after a rapid thermal process step of a semiconductor wafer |
US6090656A (en) * | 1998-05-08 | 2000-07-18 | Lsi Logic | Linear capacitor and process for making same |
US6320244B1 (en) * | 1999-01-12 | 2001-11-20 | Agere Systems Guardian Corp. | Integrated circuit device having dual damascene capacitor |
KR20010017820A (ko) * | 1999-08-14 | 2001-03-05 | 윤종용 | 반도체 소자 및 그 제조방법 |
DE19945939A1 (de) * | 1999-09-24 | 2001-04-12 | Infineon Technologies Ag | Integrierte Halbleiterschaltung mit Kondensatoren exakt vorgegebener Kapazität |
JP2001291844A (ja) * | 2000-04-06 | 2001-10-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6329234B1 (en) * | 2000-07-24 | 2001-12-11 | Taiwan Semiconductor Manufactuirng Company | Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow |
US6313003B1 (en) * | 2000-08-17 | 2001-11-06 | Taiwan Semiconductor Manufacturing Company | Fabrication process for metal-insulator-metal capacitor with low gate resistance |
US6815796B2 (en) * | 2001-12-07 | 2004-11-09 | Taiyo Yuden Co., Ltd. | Composite module and process of producing same |
US6730573B1 (en) * | 2002-11-01 | 2004-05-04 | Chartered Semiconductor Manufacturing Ltd. | MIM and metal resistor formation at CU beol using only one extra mask |
-
2001
- 2001-12-13 DE DE10161286A patent/DE10161286A1/de not_active Withdrawn
-
2002
- 2002-12-05 EP EP02792906A patent/EP1454345A1/de not_active Ceased
- 2002-12-05 AU AU2002358618A patent/AU2002358618A1/en not_active Abandoned
- 2002-12-05 CN CN02825012A patent/CN100576441C/zh not_active Expired - Fee Related
- 2002-12-05 WO PCT/EP2002/013804 patent/WO2003054934A1/de not_active Application Discontinuation
- 2002-12-12 TW TW091135972A patent/TW200301963A/zh unknown
-
2004
- 2004-06-10 US US10/865,463 patent/US7233053B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5825073A (en) * | 1994-12-09 | 1998-10-20 | Lucent Technologies, Inc. | Electronic component for an integrated circuit |
JPH11233723A (ja) * | 1998-02-13 | 1999-08-27 | Sony Corp | 電子素子およびその製造方法ならびに誘電体キャパシタおよびその製造方法ならびに光学素子およびその製造方法 |
JP2000228497A (ja) * | 1999-02-04 | 2000-08-15 | Samsung Electronics Co Ltd | 半導体集積回路のキャパシタ製造方法 |
US6086951A (en) * | 1999-06-14 | 2000-07-11 | United Microelectronics Corp. | Method for forming metallic capacitor |
Non-Patent Citations (2)
Title |
---|
KAR-ROY A ET AL: "HIGH DENSITY METAL INSULATOR METAL CAPACITORS USING PECVD NITRIDE FOR MIXED SIGNAL AND RF CIRCUITS", PROCEEDINGS OF THE IEEE, INTERNATIONAL INTERCONNECT TECHNOLOGYCONFERENCE, XX, XX, 24 May 1999 (1999-05-24), pages 245 - 247, XP000933962 * |
See also references of WO03054934A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN100576441C (zh) | 2009-12-30 |
DE10161286A1 (de) | 2003-07-03 |
US20050012223A1 (en) | 2005-01-20 |
WO2003054934A1 (de) | 2003-07-03 |
AU2002358618A1 (en) | 2003-07-09 |
CN1605114A (zh) | 2005-04-06 |
TW200301963A (en) | 2003-07-16 |
US7233053B2 (en) | 2007-06-19 |
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