EP1362420A1 - Composant a ondes acoustiques de surface - Google Patents

Composant a ondes acoustiques de surface

Info

Publication number
EP1362420A1
EP1362420A1 EP02714026A EP02714026A EP1362420A1 EP 1362420 A1 EP1362420 A1 EP 1362420A1 EP 02714026 A EP02714026 A EP 02714026A EP 02714026 A EP02714026 A EP 02714026A EP 1362420 A1 EP1362420 A1 EP 1362420A1
Authority
EP
European Patent Office
Prior art keywords
surface wave
wave component
acoustic surface
component according
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02714026A
Other languages
German (de)
English (en)
Inventor
Siegfried Menzel
Hagen Schmidt
Manfred Weihnacht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
Original Assignee
Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV filed Critical Leibniz Institut fuer Festkorper und Werkstofforschung Dresden eV
Publication of EP1362420A1 publication Critical patent/EP1362420A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02874—Means for compensation or elimination of undesirable effects of direct coupling between input and output transducers

Definitions

  • the invention relates to a surface acoustic wave component in which metallic strip structures are mechanically coupled to a piezoelectric material.
  • Such components can be used, for example, as filters, acousto-optical modulators, actuators, convolvers or sensors.
  • the stripe structures of known acoustic surface wave components are based on AI and are subject to acustom migration under stress, especially when realizing large powers and amplitudes.
  • the material of the stripe structures is partially transported, which leads to the formation of cavities and streak breaks on the one hand and to hill growth and lateral growth on the other.
  • Another characteristic of damage can be the partial delamination of the stripe structures.
  • Another way is to use two-layer Al layers, the Al being alloyed with small amounts of another element, in particular with Cu or Ti, layers with different alloy compositions being combined with one another (US Pat. No. 4,775,814).
  • Multi-layer systems with up to eleven Al layers are also known, with an Al-free intermediate layer made of, for example, Ti or Cu as a migration inhibitor with a larger elastic component being arranged between the individual Al layers, which are the main component of the layer system (US Pat. No. 5,844 374).
  • An Al-free intermediate layer made of, for example, Ti or Cu as a migration inhibitor with a larger elastic component being arranged between the individual Al layers, which are the main component of the layer system (US Pat. No. 5,844 374).
  • the production of stripe structures on this basis is technically very complex.
  • Strip structures are provided with a hard cover layer, for example with Al oxide, silicide or boride
  • the layer is either applied or generated by reaction with the AI.
  • the substrate, as well as the thickness of the overlay and the metallization must be adapted to the wave type so that only a lower damping of the surface waves is brought about.
  • a surface acoustic wave arrangement is also known, in which single-crystal is used to reduce migration effects grown Cu layers can be used on diamond substrate
  • the invention is based on the object of designing surface acoustic wave components in which metallic strip structures made of Cu are mechanically coupled to a piezoelectric material such that, even when the components are subjected to high loads, the acustom migration to the strip structures is noticeably reduced or completely with technical measures which are as easy to implement as possible can be avoided.
  • the metallic stripe structures have a polycrystalline and / or nanocrystalline structure or / and are in the amorphous state and are made of a Cu base material with an admixture of 0 atomic% to a maximum of 10 atomic% or several other metallic elements, an alloy and / or a compound exist.
  • the strip structures are coated or surrounded with one or more diffusion barrier layers.
  • Diffusion barrier layers, an adhesion promoter layer and / or a protective layer are present, or the diffusion barrier layers are designed as a protective layer and / or as an adhesion promoter layer.
  • the added elements are preferably selected from the group Ag, Ta, W, Si, Zr, Cr and Ti.
  • the strip structures consist of a Cu-based alloy with 50 atom ppm to 5.0 atom% Ag, preferably with 100 atom ppm to 2.0 atom% Ag.
  • the added alloy can advantageously consist of two or more elements from the group Ag, Ta, W, Si, Zr, Cr and Ti.
  • the strip structures can advantageously be coated or surrounded with Si0 2 , Si 3 N 4 , Cr0 2 and / or A1 2 0.
  • the stripe structures according to the invention can rest on the piezoelectric material or can be arranged completely or partially embedded in trenches of the piezoelectric material with regard to the stripe height.
  • the stripe structures can also rest on a non-piezoelectric substrate or be completely or partially recessed in the trenches of a non-piezoelectric substrate with respect to the stripe height, the partially or completely recessed stripe structures either being connected to a piezoelectric plate on their top side or to their top side and partially on their side surfaces are covered with a piezoelectric layer.
  • the non-piezoelectric substrate can consist of an insulator material or a semiconductor material, in particular of diamond, Si, GaAs or Ge or compounds of Si or Ge.
  • the stripe structures can be used as a monolayer or as
  • Multi-layer layer where in the
  • Multi-layer layers adjacent layers can consist of different materials.
  • a diffusion barrier and / or adhesion promoter layer can advantageously be arranged between the strip structures and the non-piezoelectric substrate and / or between the layers of the multilayer layer and / or between the strip structures and the piezoelectric material.
  • the diffusion barrier layer preferably consists of Ta, Ti, W, Ag, Au, Al or their oxides or nitrides or fluorides or from multilayers of these materials.
  • the grain sizes should predominantly be ⁇ 50 nm.
  • the strip structures consist of a Cu-based alloy of the composition Cu ⁇ ⁇ oo- x ) Ag x , where x is set to a value in the range from 59 to 62, in particular to 60.1 , at which the eutectic point of the alloy lies.
  • the acoustic surface wave components according to the invention have a significantly higher resistance to acustom migration and thus a longer service life than the known components of this type, since the acustom migration on the strip structures is significantly reduced and in certain cases practically completely avoided.
  • This advantage is achieved in particular by the material used for the stripe structures, but also by the manner in which the stripe structures are mechanically coupled to the piezoelectric material and their wrapping, which are formed by the barrier and / or protective layers provided according to the invention.
  • the invention can advantageously be used in the case of acoustic surface wave components for all metallic strip structures used there, in particular in the case of transducer structures and reflector strips.
  • one of the strips 1 can be seen from a strip structure that has been deposited on a piezoelectric material 2.
  • the stripe structure consists of copper with the addition of 1.0 atomic% Ag.
  • the piezoelectric material can consist, for example, of single-crystal LiNb0 3 , LiT0 3 , Si0 2 , La 3 Ga 5 SiO 4 , Li 2 B 4 0 7 , GaP0 4 , ZnO or A1N.
  • the top of the strip 1 and, in FIGS. 2 and 3, also the side edges of the strip 1 are covered with a diffusion barrier layer 8 made of TaN, which in particular is an O 2 and Cu diffusion prevented.
  • a diffusion barrier layer 8 made of TaN, which in particular is an O 2 and Cu diffusion prevented.
  • an adhesion promoter layer 9 made of Ta is also present between the strip 1 and the piezoelectric material 2, which also functions as a diffusion barrier layer 8 at the same time.
  • the strip 1 is embedded in the trench 3 machined into the piezoelectric material 2 and is surrounded on all sides with a diffusion barrier layer 8.
  • the strip 1 is located in a trench 5 machined into a non-piezoelectric substrate 4.
  • the strip 1 is connected to the piezoelectric material 2 on its upper side.
  • two strips 1 of a strip structure are shown. In terms of their height, the strips 1 are only partially embedded in trenches 5 which are incorporated in a non-piezoelectric substrate 4.
  • the strips 1 are connected on their upper side to a plate 6 made of piezoelectric material 2.
  • the surfaces of the strips 1 protruding from the non-piezoelectric substrate are covered with a layer 7 of piezoelectric material 2.
  • the non-piezoelectric substrate 4 consists of a semiconductor material, specifically of Si.
  • the same materials as used for FIGS. 1 to 4 were used.
  • the Cu, diffusion barrier and bonding agent and protective layers are expediently applied using the known methods of thin-film technology, for example by magnetron sputtering or also by MO-CVD, by electron beam evaporation or by electroplating.
  • the strip structures according to the invention can be applied to any of the commercial piezoelectric or non-piezoelectric substrates, specifically as strip structures lying on top or partially or completely in trenches.
  • the structuring processes known from microelectronics, for example the liftoff technique or etching processes, can be used here.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention concerne un composant à ondes acoustiques de surface, dans lequel des structures de bandes métalliques sont accouplées mécaniquement à un matériau piézoélectrique. L'objectif de l'invention est de créer des composants de ce type, dont les structures de bandes métalliques sont constituées de Cu, de sorte que, même en cas de sollicitation élevée des composants, la migration acoustique au niveau des structures de bandes puisse être considérablement réduite voire totalement supprimée au moyen de mesures techniques réalisables le plus simplement possible. A cet effet, les structures de bandes métalliques possèdent une structure polycristalline et/ou nanocristalline et/ou se présentent à l'état amorphe et sont constituées d'un matériau de base de Cu auquel est mélangé entre 0 et 10 % atomique au maximum d'un ou plusieurs autres éléments métalliques, d'un alliage et/ou d'un composé. En outre, les structures de bandes selon l'invention sont revêtues ou entourées d'une ou plusieurs couches de barrière de diffusion. Les composants selon l'invention s'utilisent par exemple comme filtres, modulateurs acousto-optiques, actionneurs, convolutionneurs ou détecteurs.
EP02714026A 2001-02-16 2002-02-15 Composant a ondes acoustiques de surface Withdrawn EP1362420A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10107804 2001-02-16
DE10107804 2001-02-16
PCT/DE2002/000571 WO2002067423A1 (fr) 2001-02-16 2002-02-15 Composant a ondes acoustiques de surface

Publications (1)

Publication Number Publication Date
EP1362420A1 true EP1362420A1 (fr) 2003-11-19

Family

ID=7674626

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02714026A Withdrawn EP1362420A1 (fr) 2001-02-16 2002-02-15 Composant a ondes acoustiques de surface

Country Status (7)

Country Link
US (1) US6853115B2 (fr)
EP (1) EP1362420A1 (fr)
JP (1) JP2004519171A (fr)
KR (1) KR100856656B1 (fr)
CN (1) CN1457549A (fr)
DE (2) DE10206480B4 (fr)
WO (1) WO2002067423A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10216559B4 (de) * 2002-04-09 2007-08-09 Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. Akustisches Oberflächenwellenbauelement und Verfahren zu dessen Herstellung
DE10236003B4 (de) * 2002-08-06 2013-12-24 Epcos Ag Verfahren zur Herstellung eines Bauelements mit leistungsverträglicher Elektrodenstruktur
JP4064208B2 (ja) * 2002-10-31 2008-03-19 アルプス電気株式会社 弾性表面波素子及びその製造方法
DE10302633B4 (de) * 2003-01-23 2013-08-22 Epcos Ag SAW-Bauelement mit verbessertem Temperaturgang
JP4453701B2 (ja) 2004-03-02 2010-04-21 株式会社村田製作所 弾性表面波装置
JP4183019B2 (ja) * 2005-04-06 2008-11-19 株式会社村田製作所 表面波センサ装置
JP4279271B2 (ja) * 2005-06-01 2009-06-17 アルプス電気株式会社 弾性表面波素子及びその製造方法
US7373838B2 (en) * 2005-06-03 2008-05-20 Honeywell International Inc. Acoustic wave flow sensor for high-condensation applications
CN100435482C (zh) * 2005-09-30 2008-11-19 哈尔滨工业大学 薄膜声表面波器件的非晶金刚石增频衬底的制备方法
CN101180532A (zh) * 2006-04-20 2008-05-14 多弗电子股份有限公司 用于恶劣环境的涂层以及使用所述涂层的传感器
KR100889044B1 (ko) * 2007-08-09 2009-03-19 주식회사 엠디티 표면탄성파 센서
DE102009021508B4 (de) * 2009-05-15 2014-05-22 Epcos Ag Elektrode mit verbesserter Leistungsfestigkeit
JP5378927B2 (ja) * 2009-09-25 2013-12-25 太陽誘電株式会社 弾性波デバイスの製造方法
CN101986563B (zh) * 2010-10-18 2013-08-28 华为技术有限公司 声表面滤波器及其制造方法
JP5617936B2 (ja) * 2011-01-19 2014-11-05 株式会社村田製作所 弾性表面波装置
US8723392B2 (en) * 2011-07-15 2014-05-13 International Business Machines Corporation Saw filter having planar barrier layer and method of making

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204493A (ja) * 1995-01-23 1996-08-09 Oki Electric Ind Co Ltd 弾性表面波装置
JPH09199976A (ja) * 1996-01-18 1997-07-31 Hitachi Ltd 弾性表面波素子電極
EP1049252A2 (fr) * 1999-04-28 2000-11-02 Murata Manufacturing Co., Ltd. Procédé de fabrication d'un composant à ondes acoustiques de surface

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1188478A (fr) * 1982-07-15 1985-06-11 Peter E.F. Krause Collecteur integre a l'epreuve de la corrosion
JPS62272610A (ja) * 1986-05-21 1987-11-26 Hitachi Ltd 弾性表面波素子
JP3252865B2 (ja) * 1992-09-11 2002-02-04 住友電気工業株式会社 表面弾性波素子および表面弾性波素子の製造方法
US5856198A (en) * 1994-12-28 1999-01-05 Extraction Systems, Inc. Performance monitoring of gas-phase air filters
JPH0969748A (ja) * 1995-09-01 1997-03-11 Matsushita Electric Ind Co Ltd Ｓａｗデバイスおよびその製造方法
WO1997044989A1 (fr) 1996-05-23 1997-11-27 Philips Electronics N.V. Agencement de circuit
DE19758195C2 (de) * 1997-12-30 2000-05-18 Siemens Ag Oberflächenwellen- (SAW-)Bauelement auf insbesondere Lithiumtantalat- oder -niobat-Substrat
CN1190892C (zh) * 1998-04-21 2005-02-23 松下电器产业株式会社 弹性表面波器件及其制法及使用该器件的移动通信装置
DE60035966T2 (de) * 1999-11-30 2008-03-20 Tdk Corp. Herstellungsverfahren für eine akustische oberflächenwellenvorrichtung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204493A (ja) * 1995-01-23 1996-08-09 Oki Electric Ind Co Ltd 弾性表面波装置
JPH09199976A (ja) * 1996-01-18 1997-07-31 Hitachi Ltd 弾性表面波素子電極
EP1049252A2 (fr) * 1999-04-28 2000-11-02 Murata Manufacturing Co., Ltd. Procédé de fabrication d'un composant à ondes acoustiques de surface

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN
See also references of WO02067423A1

Also Published As

Publication number Publication date
WO2002067423A1 (fr) 2002-08-29
KR100856656B1 (ko) 2008-09-04
DE10290650D2 (de) 2004-04-15
DE10206480A1 (de) 2002-09-19
DE10206480B4 (de) 2005-02-10
US20040076081A1 (en) 2004-04-22
CN1457549A (zh) 2003-11-19
US6853115B2 (en) 2005-02-08
KR20020089468A (ko) 2002-11-29
JP2004519171A (ja) 2004-06-24

Similar Documents

Publication Publication Date Title
DE10206480B4 (de) Akustisches Oberflächenwellenbauelement
DE10206369B4 (de) Elektrodenstruktur mit verbesserter Leistungsverträglichkeit und Verfahren zur Herstellung
DE102004058016B4 (de) Mit akustischen Oberflächenwellen arbeitendes Bauelement mit hoher Bandbreite
DE112010002856B4 (de) Vorrichtung für elastische Wellen und Verfahren zur Herstellung einer solchen Vorrichtung
DE102018126080A1 (de) Schallwellenvorrichtung
DE10302633B4 (de) SAW-Bauelement mit verbessertem Temperaturgang
DE102004037819B4 (de) Elektroakustisches Bauelement mit geringen Verlusten
DE112007002083B4 (de) Grenzflächenschallwellenvorrichtung
DE112015002640T5 (de) Vorrichtung für elastische Wellen
DE112013002924B4 (de) Bauelement für elastische Wellen
WO2003081773A1 (fr) Filtre comportant des resonateurs couples de façon acoustique
DE102011011377B4 (de) Mit akustischen Wellen arbeitendes Bauelement
DE112014003731B4 (de) Bauelement für elastische Oberflächenwellen und elektronische Komponente
DE112013002520B4 (de) Bauelement für elastische Wellen
DE112020001723T5 (de) Akustische oberflächenwellenvorrichtungen hoher ordnung
DE112007000373T5 (de) Grenzwellenbauelement und Verfahren zum Herstellen desselben
DE3320567C2 (de) SAW-Bauelement
DE602004002437T2 (de) Akustisches Oberflächenwellenelement und Herstellungsverfahren
DE102010048620A1 (de) Elektrode, mikroakustisches Bauelement und Herstellungsverfahren für eine Elektrode
DE102010061511A1 (de) Schallwellenvorrichtung
EP0358040B1 (fr) Couche de surface conductrice
DE10236003B4 (de) Verfahren zur Herstellung eines Bauelements mit leistungsverträglicher Elektrodenstruktur
DE112018005526B4 (de) Schallwellenvorrichtung und Verfahren zur Herstellung einer Schallwellenvorrichtung
DE102012107155A1 (de) Topografische Struktur und Verfahren zu deren Herstellung
DE102010028007A1 (de) Wandler mit natürlicher Unidirektionalität für akustische Oberflächenwellen

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20030916

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

TPAC Observations filed by third parties

Free format text: ORIGINAL CODE: EPIDOSNTIPA

17Q First examination report despatched

Effective date: 20071001

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20160901