EP1362420A1 - Acoustic surface wave component - Google Patents
Acoustic surface wave componentInfo
- Publication number
- EP1362420A1 EP1362420A1 EP02714026A EP02714026A EP1362420A1 EP 1362420 A1 EP1362420 A1 EP 1362420A1 EP 02714026 A EP02714026 A EP 02714026A EP 02714026 A EP02714026 A EP 02714026A EP 1362420 A1 EP1362420 A1 EP 1362420A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- surface wave
- wave component
- acoustic surface
- component according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 12
- 239000000956 alloy Substances 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000002318 adhesion promoter Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 150000002222 fluorine compounds Chemical class 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 230000005012 migration Effects 0.000 abstract description 8
- 238000013508 migration Methods 0.000 abstract description 8
- 239000010949 copper Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012754 barrier agent Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02874—Means for compensation or elimination of undesirable effects of direct coupling between input and output transducers
Definitions
- the invention relates to a surface acoustic wave component in which metallic strip structures are mechanically coupled to a piezoelectric material.
- Such components can be used, for example, as filters, acousto-optical modulators, actuators, convolvers or sensors.
- the stripe structures of known acoustic surface wave components are based on AI and are subject to acustom migration under stress, especially when realizing large powers and amplitudes.
- the material of the stripe structures is partially transported, which leads to the formation of cavities and streak breaks on the one hand and to hill growth and lateral growth on the other.
- Another characteristic of damage can be the partial delamination of the stripe structures.
- Another way is to use two-layer Al layers, the Al being alloyed with small amounts of another element, in particular with Cu or Ti, layers with different alloy compositions being combined with one another (US Pat. No. 4,775,814).
- Multi-layer systems with up to eleven Al layers are also known, with an Al-free intermediate layer made of, for example, Ti or Cu as a migration inhibitor with a larger elastic component being arranged between the individual Al layers, which are the main component of the layer system (US Pat. No. 5,844 374).
- An Al-free intermediate layer made of, for example, Ti or Cu as a migration inhibitor with a larger elastic component being arranged between the individual Al layers, which are the main component of the layer system (US Pat. No. 5,844 374).
- the production of stripe structures on this basis is technically very complex.
- Strip structures are provided with a hard cover layer, for example with Al oxide, silicide or boride
- the layer is either applied or generated by reaction with the AI.
- the substrate, as well as the thickness of the overlay and the metallization must be adapted to the wave type so that only a lower damping of the surface waves is brought about.
- a surface acoustic wave arrangement is also known, in which single-crystal is used to reduce migration effects grown Cu layers can be used on diamond substrate
- the invention is based on the object of designing surface acoustic wave components in which metallic strip structures made of Cu are mechanically coupled to a piezoelectric material such that, even when the components are subjected to high loads, the acustom migration to the strip structures is noticeably reduced or completely with technical measures which are as easy to implement as possible can be avoided.
- the metallic stripe structures have a polycrystalline and / or nanocrystalline structure or / and are in the amorphous state and are made of a Cu base material with an admixture of 0 atomic% to a maximum of 10 atomic% or several other metallic elements, an alloy and / or a compound exist.
- the strip structures are coated or surrounded with one or more diffusion barrier layers.
- Diffusion barrier layers, an adhesion promoter layer and / or a protective layer are present, or the diffusion barrier layers are designed as a protective layer and / or as an adhesion promoter layer.
- the added elements are preferably selected from the group Ag, Ta, W, Si, Zr, Cr and Ti.
- the strip structures consist of a Cu-based alloy with 50 atom ppm to 5.0 atom% Ag, preferably with 100 atom ppm to 2.0 atom% Ag.
- the added alloy can advantageously consist of two or more elements from the group Ag, Ta, W, Si, Zr, Cr and Ti.
- the strip structures can advantageously be coated or surrounded with Si0 2 , Si 3 N 4 , Cr0 2 and / or A1 2 0.
- the stripe structures according to the invention can rest on the piezoelectric material or can be arranged completely or partially embedded in trenches of the piezoelectric material with regard to the stripe height.
- the stripe structures can also rest on a non-piezoelectric substrate or be completely or partially recessed in the trenches of a non-piezoelectric substrate with respect to the stripe height, the partially or completely recessed stripe structures either being connected to a piezoelectric plate on their top side or to their top side and partially on their side surfaces are covered with a piezoelectric layer.
- the non-piezoelectric substrate can consist of an insulator material or a semiconductor material, in particular of diamond, Si, GaAs or Ge or compounds of Si or Ge.
- the stripe structures can be used as a monolayer or as
- Multi-layer layer where in the
- Multi-layer layers adjacent layers can consist of different materials.
- a diffusion barrier and / or adhesion promoter layer can advantageously be arranged between the strip structures and the non-piezoelectric substrate and / or between the layers of the multilayer layer and / or between the strip structures and the piezoelectric material.
- the diffusion barrier layer preferably consists of Ta, Ti, W, Ag, Au, Al or their oxides or nitrides or fluorides or from multilayers of these materials.
- the grain sizes should predominantly be ⁇ 50 nm.
- the strip structures consist of a Cu-based alloy of the composition Cu ⁇ ⁇ oo- x ) Ag x , where x is set to a value in the range from 59 to 62, in particular to 60.1 , at which the eutectic point of the alloy lies.
- the acoustic surface wave components according to the invention have a significantly higher resistance to acustom migration and thus a longer service life than the known components of this type, since the acustom migration on the strip structures is significantly reduced and in certain cases practically completely avoided.
- This advantage is achieved in particular by the material used for the stripe structures, but also by the manner in which the stripe structures are mechanically coupled to the piezoelectric material and their wrapping, which are formed by the barrier and / or protective layers provided according to the invention.
- the invention can advantageously be used in the case of acoustic surface wave components for all metallic strip structures used there, in particular in the case of transducer structures and reflector strips.
- one of the strips 1 can be seen from a strip structure that has been deposited on a piezoelectric material 2.
- the stripe structure consists of copper with the addition of 1.0 atomic% Ag.
- the piezoelectric material can consist, for example, of single-crystal LiNb0 3 , LiT0 3 , Si0 2 , La 3 Ga 5 SiO 4 , Li 2 B 4 0 7 , GaP0 4 , ZnO or A1N.
- the top of the strip 1 and, in FIGS. 2 and 3, also the side edges of the strip 1 are covered with a diffusion barrier layer 8 made of TaN, which in particular is an O 2 and Cu diffusion prevented.
- a diffusion barrier layer 8 made of TaN, which in particular is an O 2 and Cu diffusion prevented.
- an adhesion promoter layer 9 made of Ta is also present between the strip 1 and the piezoelectric material 2, which also functions as a diffusion barrier layer 8 at the same time.
- the strip 1 is embedded in the trench 3 machined into the piezoelectric material 2 and is surrounded on all sides with a diffusion barrier layer 8.
- the strip 1 is located in a trench 5 machined into a non-piezoelectric substrate 4.
- the strip 1 is connected to the piezoelectric material 2 on its upper side.
- two strips 1 of a strip structure are shown. In terms of their height, the strips 1 are only partially embedded in trenches 5 which are incorporated in a non-piezoelectric substrate 4.
- the strips 1 are connected on their upper side to a plate 6 made of piezoelectric material 2.
- the surfaces of the strips 1 protruding from the non-piezoelectric substrate are covered with a layer 7 of piezoelectric material 2.
- the non-piezoelectric substrate 4 consists of a semiconductor material, specifically of Si.
- the same materials as used for FIGS. 1 to 4 were used.
- the Cu, diffusion barrier and bonding agent and protective layers are expediently applied using the known methods of thin-film technology, for example by magnetron sputtering or also by MO-CVD, by electron beam evaporation or by electroplating.
- the strip structures according to the invention can be applied to any of the commercial piezoelectric or non-piezoelectric substrates, specifically as strip structures lying on top or partially or completely in trenches.
- the structuring processes known from microelectronics, for example the liftoff technique or etching processes, can be used here.
Abstract
The invention relates to an acoustic surface wave component in which metallic strip structures are mechanically coupled to a piezoelectric material. The aim of the invention is to design surface wave components of this type in which the metallic strip structures consist of Cu whereby, even in the occurrence of a high level of stress exerted on the components, being able to noticeably reduce or completely prevent the acoustic migration on the strip structures with technical measures that can be realized in the simplest possible manner. To this end, the invention provides that the metallic strip structures comprise a polycrystalline and/or nanocrystalline structure and/or exist in the amorphous state and are comprised of a Cu base material with an admixture of 0 atom % to a maximum of 10 atom % of one or more other metallic elements, of an alloy and/or of a compound. In addition, the strip structures are coated or surrounded by one or more diffusion barrier layers. The inventive components can be used, for example, as filters, acousto-optical modulators, actuators, convolvers or sensors.
Description
AKUSTISCHES OBERFLACHENWELLENBAUELE ENT ACOUSTIC SURFACE WAVE ENT
Technisches GebietTechnical field
Die Erfindung betrifft ein akustisches Oberflächenwellenbauelement, bei dem metallische Streifenstrukturen mit einem piezoelektrischen Material mechanisch gekoppelt sind. Derartige Bauelemente sind beispielsweise als Filter, akustooptische Modulatoren, Aktoren, Convolver oder Sensoren anwendbar.The invention relates to a surface acoustic wave component in which metallic strip structures are mechanically coupled to a piezoelectric material. Such components can be used, for example, as filters, acousto-optical modulators, actuators, convolvers or sensors.
Stand der TechnikState of the art
Die Streifenstrukturen bekannter akustische Oberflächenwellenbauelemente basieren auf AI und unterliegen unter Belastung der Akustomigration, insbesondere bei der Realisierung großer Leistungen und Amplituden. Hierbei wird der Werkstoff der Streifenstrukturen partiell transportiert, was zur Bildung von Hohlräumen und Streifenunterbrechungen einerseits und zu Hügelwachstum und seitlichen Auswüchsen andererseits führt. Eine weiteres Schädigungsmerkmal kann die partielle Delamination der Streifenstrukturen darstellen. Diese Veränderungen bewirken eine Beeinträchtigung der Funktion der Bauelemente, so zum Beispiel bei Filtern eine Verschiebung der Filterfrequenzen bzw. der gesamten
Filtercharakteristik hinsichtlich Admittanz undThe stripe structures of known acoustic surface wave components are based on AI and are subject to acustom migration under stress, especially when realizing large powers and amplitudes. The material of the stripe structures is partially transported, which leads to the formation of cavities and streak breaks on the one hand and to hill growth and lateral growth on the other. Another characteristic of damage can be the partial delamination of the stripe structures. These changes have an adverse effect on the function of the components, for example in the case of filters a shift in the filter frequencies or in the total Filter characteristics regarding admittance and
Einfügedämpfung, bis hin zum Totalausfall des Bauelements.Insertion loss up to the total failure of the component.
Zur Verringerung der Akustomigration sind bereits verschiedene technische Lösungen bekannt. Eine der Lösungen besteht in der Verwendung • hochtexturierter oder einkristalliner AI-Schichten für die Herstellung der Streifenstrukturen. Dieser Weg hat jedoch den Nachteil, dass die Herstellung der Streifenstrukturen sehr aufwendig ist.Various technical solutions are already known for reducing acustom migration. One of the solutions is the use of • highly textured or single-crystalline Al layers for the production of the stripe structures. However, this approach has the disadvantage that the production of the stripe structures is very complex.
Ein anderer Weg besteht in der Verwendung von zweilagigen AI- Schichten, wobei das AI mit geringen Mengen eines anderen Elements legiert ist, insbesondere mit Cu oder Ti, wobei Schichten mit unterschiedlicher Legierungszusammensetzung miteinander kombiniert sind (US 4 775 814) .Another way is to use two-layer Al layers, the Al being alloyed with small amounts of another element, in particular with Cu or Ti, layers with different alloy compositions being combined with one another (US Pat. No. 4,775,814).
Bekannt sind auch Mehrlagensysteme mit bis zu elf AI- Schichten, wobei zwischen den einzelnen AI-Schichten, welche die Hauptkomponente des Schichtsystems darstellen, jeweils eine AI-freie Zwischenschicht aus beispielsweise Ti oder Cu als Migrationshemmer mit größerer elastischer Komponente angeordnet ist (US 5 844 374). Die Herstellung von Streifenstrukturen auf dieser Basis ist technisch sehr aufwändig.Multi-layer systems with up to eleven Al layers are also known, with an Al-free intermediate layer made of, for example, Ti or Cu as a migration inhibitor with a larger elastic component being arranged between the individual Al layers, which are the main component of the layer system (US Pat. No. 5,844 374). The production of stripe structures on this basis is technically very complex.
Bei Leckwellenbauelementen ist es bekannt, dass die Al-With leaky wave components, it is known that the aluminum
Streifenstrukturen mit einer harten Deckschicht versehen werden, beispielsweise mit AI-Oxid, -Silizid oder -BoridStrip structures are provided with a hard cover layer, for example with Al oxide, silicide or boride
(DE 197 58 195) . Die Schicht wird dabei entweder aufgetragen oder durch Reaktion mit dem AI erzeugt. Das Substrat, sowie die Dicke der Überschichtung und der Metallisierung müssen jedoch an den Wellentyp angepaßt werden, damit nur eine geringere Dämpfung der Oberflächenwellen bewirkt wird.(DE 197 58 195). The layer is either applied or generated by reaction with the AI. However, the substrate, as well as the thickness of the overlay and the metallization must be adapted to the wave type so that only a lower damping of the surface waves is brought about.
Bekannt ist auch eine akustische Oberflächenwellenanordnung, bei der zur Verringerung von Migrationseffekten einkristallin
gewachsene Cu-Schichten auf Diamantsubstrat verwendet werdenA surface acoustic wave arrangement is also known, in which single-crystal is used to reduce migration effects grown Cu layers can be used on diamond substrate
(DE 693 07 974 T2) . Der technische Aufwand und die Kosten für eine technologische Umsetzung dieser einkristallinen(DE 693 07 974 T2). The technical effort and the costs for the technological implementation of these single-crystal
Schichtsysteme ist jedoch sehr hoch. Eine industrielle Realisierbarkeit dieser Technik mit der erforderlichenLayer systems, however, is very high. An industrial feasibility of this technology with the required
Reproduzierbarkeit und Kosteneffektivität dürfte dabei kaum möglich sein. Hinzu kommt, dass die Herstellung von Cu-Reproducibility and cost effectiveness should hardly be possible. In addition, the production of copper
Einkristallen generell schwierig ist, da hierfür nach dem bisherigen Kenntnisstand eine sehr geringe Gitterfehlanpassung zwischen Schicht und Substrat erforderlich ist und damit diese Technik nicht für die am häufigsten verwendeten piezoelektrischen Substratmaterialien wie LiNb03, LiTa03 oder Quarz ohne eine Bufferschicht praktizierbar wäre.Single crystals are generally difficult, since according to the current state of knowledge a very low lattice mismatch between layer and substrate is required and therefore this technique would not be practicable for the most commonly used piezoelectric substrate materials such as LiNb03, LiTa03 or quartz without a buffer layer.
Darstellung der ErfindungPresentation of the invention
Der Erfindung liegt die Aufgabe zugrunde, akustische Oberflächenwellenbauelemente, bei denen metallische Streifenstrukturen aus Cu mit einem piezoelektrischen Material mechanisch gekoppelt sind, so auszubilden, dass auch bei einer hohen Belastung der Bauelemente die Akustomigration an den Streifenstrukturen mit möglichst einfach realisierbaren technischen Maßnahmen merklich verringert oder völlig vermieden werden kann.The invention is based on the object of designing surface acoustic wave components in which metallic strip structures made of Cu are mechanically coupled to a piezoelectric material such that, even when the components are subjected to high loads, the acustom migration to the strip structures is noticeably reduced or completely with technical measures which are as easy to implement as possible can be avoided.
Diese Aufgabe wird gemäß der Erfindung dadurch gelöst, dass die metallischen Streifenstrukturen ein polykristallines und/oder nanokristallines Gefüge aufweisen oder/und im amorphen Zustand vorliegen und aus einem Cu-Basiswerkstoff mit einer Beimengung von 0 Atoπι-% bis maximal 10 Atom-% eines oder mehrerer anderer metallischer Elemente, einer Legierung und/oder einer Verbindung bestehen. Außerdem sind die Streifenstrukturen erfindungsgemäß mit einer oder mehreren Diffusionsbarriereschichten beschichtet oder umgeben.
Nach vorteilhaften Ausgestaltungen der Erfindung ist auf denThis object is achieved according to the invention in that the metallic stripe structures have a polycrystalline and / or nanocrystalline structure or / and are in the amorphous state and are made of a Cu base material with an admixture of 0 atomic% to a maximum of 10 atomic% or several other metallic elements, an alloy and / or a compound exist. In addition, the strip structures are coated or surrounded with one or more diffusion barrier layers. According to advantageous embodiments of the invention, the
Diffusionsbarriereschichten eine Haftvermittlerschicht und/oder eine Schutzschicht vorhanden oder sind die Diffusionsbarriereschichten als Schutzschicht und/oder als Haftvermittlerschicht ausgeführt.Diffusion barrier layers, an adhesion promoter layer and / or a protective layer are present, or the diffusion barrier layers are designed as a protective layer and / or as an adhesion promoter layer.
Die beigemengten Elemente sind dabei vorzugsweise aus der Gruppe Ag, Ta, W, Si, Zr, Cr und Ti ausgewählt.The added elements are preferably selected from the group Ag, Ta, W, Si, Zr, Cr and Ti.
Gemäß einer vorteilhaften Ausgestaltung der Erfindung bestehen die Streifenstrukturen aus einer Cu-Basislegierung mit 50 Atom-ppm bis 5,0 Atom-% Ag, vorzugsweise mit 100 Atom- ppm bis 2,0 Atom-% Ag.According to an advantageous embodiment of the invention, the strip structures consist of a Cu-based alloy with 50 atom ppm to 5.0 atom% Ag, preferably with 100 atom ppm to 2.0 atom% Ag.
Die beigemengte Legierung kann vorteilhaft aus zwei oder mehreren Elemente der Gruppe Ag, Ta, W, Si, Zr, Cr und Ti bestehen.The added alloy can advantageously consist of two or more elements from the group Ag, Ta, W, Si, Zr, Cr and Ti.
Die Streifenstrukturen können vorteilhaft mit Si02, Si3N4, Cr02 und/oder A120 beschichtet oder umgeben sein.The strip structures can advantageously be coated or surrounded with Si0 2 , Si 3 N 4 , Cr0 2 and / or A1 2 0.
Die erfindungsgemäßen Streifenstrukturen können auf dem piezoelektrischen Material aufliegen oder in Gräben des piezoelektrischen Materials hinsichtlich der Streifenhöhe vollständig oder teilweise eingelassen angeordnet sein.The stripe structures according to the invention can rest on the piezoelectric material or can be arranged completely or partially embedded in trenches of the piezoelectric material with regard to the stripe height.
Die Streifenstrukturen können erfindungsgemäß auch auf einem nichtpiezoelektrischen Substrat aufliegen oder in Gräben eines nichtpiezoelektrischen Substrats hinsichtlich der Streifenhöhe vollständig oder teilweise eingelassen angeordnet sein, wobei die teilweise oder vollständig eingelassenen Streifenstrukturen entweder an ihrer Oberseite mit einer piezoelektrischen Platte verbunden sind oder an ihrer Oberseite und teilweise an ihren Seitenflächen mit einer piezoelektrischen Schicht bedeckt sind.
Das nichtpiezoelektrische Substrat kann hierbei aus einem Isolatormaterial oder einem Halbleitermaterial bestehen, insbesondere aus Diamant, Si, GaAs oder Ge oder Verbindungen von Si oder Ge .According to the invention, the stripe structures can also rest on a non-piezoelectric substrate or be completely or partially recessed in the trenches of a non-piezoelectric substrate with respect to the stripe height, the partially or completely recessed stripe structures either being connected to a piezoelectric plate on their top side or to their top side and partially on their side surfaces are covered with a piezoelectric layer. The non-piezoelectric substrate can consist of an insulator material or a semiconductor material, in particular of diamond, Si, GaAs or Ge or compounds of Si or Ge.
Die Streifenstrukturen können als Monoschicht oder alsThe stripe structures can be used as a monolayer or as
Multilagenschicht ausgeführt sein, wobei in derMulti-layer layer, where in the
Multilagenschicht benachbarte Schichten zueinander aus unterschiedlichen Werkstoffen bestehen können.Multi-layer layers adjacent layers can consist of different materials.
Vorteilhafterweise können zwischen den Streifenstrukturen und dem nichtpiezoelektrischen Substrat und/oder zwischen den Lagen der Multilagenschicht und/oder zwischen den Streifenstrukturen und dem piezoelektrischen Material eine Diffusionsbarriere- und/oder Haftvermittlerschicht angeordnet sein.A diffusion barrier and / or adhesion promoter layer can advantageously be arranged between the strip structures and the non-piezoelectric substrate and / or between the layers of the multilayer layer and / or between the strip structures and the piezoelectric material.
Die Diffusionsbarriereschicht besteht vorzugsweise aus Ta, Ti, W, Ag, Au, AI oder deren Oxiden oder Nitriden oder Flouriden oder aus Multischichten von diesen Materialien.The diffusion barrier layer preferably consists of Ta, Ti, W, Ag, Au, Al or their oxides or nitrides or fluorides or from multilayers of these materials.
Als Haftvermittlerschicht sind Cr, Ti, W, Ta, Si oder deren Verbindungen vorgesehen.Cr, Ti, W, Ta, Si or their compounds are provided as the adhesion promoter layer.
Im Falle der Ausführung der Streifenstrukturen mit polykristallinem Gefüge sollten die Korngrößen überwiegend < 50 nm sein.In the case of the strip structures having a polycrystalline structure, the grain sizes should predominantly be <50 nm.
Zur Lösung der Erfindungsaufgabe ist auch vorgesehen, dass die Streifenstrukturen aus einer Cu-Basislegierung der Zusammensetzung Cu{ιoo-x)Agx bestehen, wobei x auf einen Wert im Bereich von 59 bis 62, insbesondere auf den Wert von 60,1 eingestellt ist, bei dem der eutektische Punkt der Legierung liegt.
Die erfindungsgemäßen akustischen Oberflächenwellen- bauelemente weisen gegenüber den bekannten derartigen Bauelementen eine deutlich höhere Resistenz gegen Akustomigration und damit eine längere Lebensdauer auf, da die Akustomigration an den Streifenstrukturen wesentlich verringert und in bestimmten Fällen praktisch völlig vermieden wird. Dieser Vorteil wird insbesondere durch den für die Streifenstrukturen verwendeten Werkstoff erzielt, aber auch durch die Art und Weise der mechanischen Kopplung der Streifenstrukturen mit dem piezoelektrischen Material und deren Umhüllung, die von den erfindungsgemäß vorgesehenen Barriere- und/oder Schutzschichten gebildet werden. Die Erfindung ist bei akustischen Oberflächenwellenbauelementen für alle dort verwendeten metallischen Streifenstrukturen vorteilhaft anwendbar, insbesondere bei Wandlerstrukturen und Reflektorstreifen.To achieve the object of the invention, it is also provided that the strip structures consist of a Cu-based alloy of the composition Cu { ιoo- x ) Ag x , where x is set to a value in the range from 59 to 62, in particular to 60.1 , at which the eutectic point of the alloy lies. The acoustic surface wave components according to the invention have a significantly higher resistance to acustom migration and thus a longer service life than the known components of this type, since the acustom migration on the strip structures is significantly reduced and in certain cases practically completely avoided. This advantage is achieved in particular by the material used for the stripe structures, but also by the manner in which the stripe structures are mechanically coupled to the piezoelectric material and their wrapping, which are formed by the barrier and / or protective layers provided according to the invention. The invention can advantageously be used in the case of acoustic surface wave components for all metallic strip structures used there, in particular in the case of transducer structures and reflector strips.
Wege zur Ausführung der ErfindungWays of Carrying Out the Invention
Nachstehend ist die Erfindung anhand von Ausführungsbeispielen und den in den zugehörigen Zeichnungen enthaltenen Figuren 1 bis 7 näher erläutert. In den Figuren ist dabei jeweils nur das für die Erläuterung der Erfindung wesentliche Teilstück der erfindungsgemäßen Bauelemente dargestellt.The invention is explained in more detail below on the basis of exemplary embodiments and FIGS. 1 to 7 contained in the associated drawings. In the figures, only the part of the components according to the invention that is essential for explaining the invention is shown.
In den Figuren 1 bis 3 ist einer der Streifen 1 von einer Streifenstruktur ersichtlich, die auf einem piezoelektrischen Material 2 abgeschieden worden ist. Die Streifenstruktur besteht aus Kupfer mit einem Zusatz von 1,0 Atom-% Ag. Das piezoelektrische Material kann beispielsweise aus einkristallinem LiNb03, LiT03, Si02, La3Ga5SiOι4, Li2B407, GaP04, ZnO oder A1N bestehen. Die Oberseite des Streifens 1 und in den Figuren 2 und 3 auch die Seitenkanten des Streifens 1 sind mit einer Diffusionsbarriereschicht 8 aus TaN bedeckt, die insbesondere eine 02- und Cu-Diffusion
verhindert. Bei der Anordnung gemäß Figur 3 ist zwischen dem Streifen 1 und dem piezoelektrischen Material 2 noch eine Haftvermittlerschicht 9 aus Ta vorhanden, die gleichzeitig auch als Diffusionsbarriereschicht 8 fungiert. Bei der Darstellung gemäß Figur 4 ist der Streifen 1 in den in das piezoelektrische Material 2 eingearbeiteten Graben 3 eingelassen und allseitig mit einer Diffusionsbarriereschicht 8 umgeben.1 to 3, one of the strips 1 can be seen from a strip structure that has been deposited on a piezoelectric material 2. The stripe structure consists of copper with the addition of 1.0 atomic% Ag. The piezoelectric material can consist, for example, of single-crystal LiNb0 3 , LiT0 3 , Si0 2 , La 3 Ga 5 SiO 4 , Li 2 B 4 0 7 , GaP0 4 , ZnO or A1N. The top of the strip 1 and, in FIGS. 2 and 3, also the side edges of the strip 1 are covered with a diffusion barrier layer 8 made of TaN, which in particular is an O 2 and Cu diffusion prevented. In the arrangement according to FIG. 3, an adhesion promoter layer 9 made of Ta is also present between the strip 1 and the piezoelectric material 2, which also functions as a diffusion barrier layer 8 at the same time. In the illustration according to FIG. 4, the strip 1 is embedded in the trench 3 machined into the piezoelectric material 2 and is surrounded on all sides with a diffusion barrier layer 8.
Bei der Anordnung gemäß Figur 5 befindet sich der Streifen 1 in einem in ein nichtpiezoelektrisches Substrat 4 eingearbeiteten Graben 5. An seiner Oberseite ist der Streifen 1 mit dem piezoelektrischen Material 2 verbunden. Bei den Anordnungen gemäß der Figuren 6 und 7 sind jeweils zwei Streifen 1 einer Streifenstruktur dargestellt. Die Streifen 1 sind hier hinsichtlich ihrer Höhe nur teilweise in Gräben 5 eingelassen, die in ein nichtpiezoelektrisches Substrat 4 eingearbeitet sind. Bei der Anordnung gemäß Fig. 6 sind die Streifen 1 an ihrer Oberseite mit einer Platte 6 aus piezoelektrischem Material 2 verbunden. Bei der Anordnung gemäß Fig. 7 sind die aus dem nichtpiezoelektrischen Substrat herausragenden Flächen der Streifen 1 mit einer Schicht 7 aus piezoelektrischem Material 2 überschichtet.In the arrangement according to FIG. 5, the strip 1 is located in a trench 5 machined into a non-piezoelectric substrate 4. The strip 1 is connected to the piezoelectric material 2 on its upper side. In the arrangements according to FIGS. 6 and 7, two strips 1 of a strip structure are shown. In terms of their height, the strips 1 are only partially embedded in trenches 5 which are incorporated in a non-piezoelectric substrate 4. In the arrangement according to FIG. 6, the strips 1 are connected on their upper side to a plate 6 made of piezoelectric material 2. In the arrangement according to FIG. 7, the surfaces of the strips 1 protruding from the non-piezoelectric substrate are covered with a layer 7 of piezoelectric material 2.
Das nichtpiezoelektrisches Substrat 4 besteht bei den Anordnungen gemäß der Figuren 5 bis 7 aus einem Halbleitermaterial und zwar aus Si. Im übrigen wurden die gleichen Materialien wie zu den Figuren 1 bis 4 genannt verwendet .In the arrangements according to FIGS. 5 to 7, the non-piezoelectric substrate 4 consists of a semiconductor material, specifically of Si. For the rest, the same materials as used for FIGS. 1 to 4 were used.
Das Aufbringen der Cu-, Diffusionsbarriere- und Haftvermittler- und Schutzschichten erfolgt zweckmäßigerweise mit den bekannten Verfahren der Dünnschichttechnik, beispielsweise durch Magnetronsputtern oder auch durch MO- CVD, durch Elektronenstrahlverdampfen oder durch Elektroplating .
Die erfindungsgemäßen Streifenstrukturen können auf jedem der kommerziellen piezoelektrischen oder nichtpiezoelektrischen Substrate aufgebracht werden, und zwar als aufliegende oder teilweise oder vollständig in Gräben befindliche Streifenstrukturen. Dabei können die aus der Mikroelektronik bekannten Strukturierungsverfahren, beispielsweise die Liftoff-Technik oder Ätzverfahren, eingesetzt werden.
The Cu, diffusion barrier and bonding agent and protective layers are expediently applied using the known methods of thin-film technology, for example by magnetron sputtering or also by MO-CVD, by electron beam evaporation or by electroplating. The strip structures according to the invention can be applied to any of the commercial piezoelectric or non-piezoelectric substrates, specifically as strip structures lying on top or partially or completely in trenches. The structuring processes known from microelectronics, for example the liftoff technique or etching processes, can be used here.
Claims
1. Akustisches Oberflächenwellenbauelement, bei dem auf einem piezoelektrischen Material metallische Streifenstrukturen aus Cu aufgebracht sind, dadurch gekennzeichnet, dass die metallischen Streifenstrukturen ein polykristallines und/oder nanokristallines Gefüge aufweisen oder/und im amorphen Zustand vorliegen und aus einem Cu-Basiswerkstoff mit einer Beimengung von 0 Atom- % bis maximal 10 Atom-% eines oder mehrerer anderer metallischer Elemente, einer Legierung und/oder einer Verbindung bestehen, und dass die Streifenstrukturen mit einer oder mehreren Diffusionsbarriereschichten beschichtet oder umgeben sind.1. Acoustic surface wave component in which metallic stripe structures made of Cu are applied to a piezoelectric material, characterized in that the metallic stripe structures have a polycrystalline and / or nanocrystalline structure or / and are in the amorphous state and made of a Cu base material with an admixture of 0 atomic% to a maximum of 10 atomic% of one or more other metallic elements, an alloy and / or a compound, and that the strip structures are coated or surrounded with one or more diffusion barrier layers.
Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass auf den Diffusionsbarriereschichten eine Haftvermittlerschicht und/oder eine Schutzschicht vorhanden ist.Acoustic surface wave component according to claim 1, characterized in that an adhesion promoter layer and / or a protective layer is present on the diffusion barrier layers.
Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass die Diffusionsbarriereschichten als Schutzschicht und/oder als Haftvermittlerschicht ausgeführt sind.Acoustic surface wave component according to claim 1, characterized in that the diffusion barrier layers are designed as a protective layer and / or as an adhesion promoter layer.
Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass die beigemengten Elemente aus der Gruppe Ag, Ta, W, Si, Zr, Cr und Ti ausgewählt sind.Acoustic surface wave component according to claim 1, characterized in that the added elements are selected from the group Ag, Ta, W, Si, Zr, Cr and Ti.
5. Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass die Streifenstrukturen aus einer Cu-Basislegierung mit 50 Atom-ppm bis5. Acoustic surface wave component according to claim 1, characterized in that the strip structures made of a Cu-based alloy with 50 atomic ppm to
5,0 Atom-% Ag, vorzugsweise mit 100 Atom-ppm bis 2,0 Atom-% Ag bestehen. 5.0 atom% Ag, preferably with 100 atom ppm to 2.0 atom% Ag.
6. Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass die beigemengte Legierung aus zwei oder mehreren Elementen der Gruppe Ag, Ta, W, Si, Zr, Cr und Ti besteht.6. Acoustic surface wave component according to claim 1, characterized in that the admixed alloy consists of two or more elements from the group Ag, Ta, W, Si, Zr, Cr and Ti.
7. Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass die Streifenstrukturen mit Si02, Si3N4, Cr02 und/oder A1203 beschichtet oder umgeben sind.7. Acoustic surface wave component according to claim 1, characterized in that the stripe structures are coated or surrounded with Si0 2 , Si 3 N 4 , Cr0 2 and / or A1 2 0 3 .
8. Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass die Streifenstrukturen auf dem piezoelektrischen Material aufliegen oder in Gräben des piezoelektrischen Materials hinsichtlich der Streifenhöhe vollständig oder teilweise eingelassen angeordnet sind.8. Acoustic surface wave component according to claim 1, characterized in that the strip structures rest on the piezoelectric material or are arranged completely or partially embedded in trenches of the piezoelectric material with respect to the strip height.
9. Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass die Streifenstrukturen auf einem nichtpiezoelektrischen Substrat aufliegen oder in Gräben eines nichtpiezoelektrischen Substrats hinsichtlich der Streifenhöhe vollständig oder teilweise eingelassen angeordnet sind, wobei die teilweise oder vollständig eingelassenen Streifenstrukturen entweder an ihrer Oberseite mit einer piezoelektrischen Platte verbunden sind oder an ihrer Oberseite und teilweise an ihren Seitenflächen mit einer piezoelektrischen Schicht bedeckt sind.9. Acoustic surface wave component according to claim 1, characterized in that the stripe structures lie on a non-piezoelectric substrate or are arranged in trenches of a non-piezoelectric substrate with respect to the stripe height completely or partially embedded, the partially or completely recessed stripe structures either on their top with a piezoelectric plate are connected or are covered on their top and partially on their side surfaces with a piezoelectric layer.
10. Akustisches Oberflächenwellenbauelement nach Anspruch 9, dadurch gekennzeichnet, dass das nichtpiezoelektrische Substrat aus einem Isolatormaterial oder einem Halbleitermaterial besteht, insbesondere aus Diamant, Si, GaAs oder Ge oder Verbindungen von Si oder Ge . 10. Acoustic surface wave component according to claim 9, characterized in that the non-piezoelectric substrate consists of an insulator material or a semiconductor material, in particular of diamond, Si, GaAs or Ge or compounds of Si or Ge.
11. Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass die Streifenstrukturen als Monoschicht oder als Multilagenschicht ausgeführt sind.11. Acoustic surface wave component according to claim 1, characterized in that the strip structures are designed as a monolayer or as a multilayer layer.
12. Akustisches Oberflächenwellenbauelement nach Anspruch 11, dadurch gekennzeichnet, dass in der Multilagenschicht benachbarte Schichten zueinander aus unterschiedlichen Werkstoffen bestehen.12. Acoustic surface wave component according to claim 11, characterized in that in the multilayer layer adjacent layers to each other consist of different materials.
13. Akustisches Oberflächenwellenbauelement nach einem der Ansprüche 1 bis 12, dadurch gekennzeichnet, dass zwischen den Streifenstrukturen und dem nichtpiezoelektrischen Substrat und/oder zwischen den Lagen der Multilagenschicht und/oder zwischen den Streifenstrukturen und dem piezoelektrischen Material eine Diffusionsbarriere- und/oder Haftvermittlerschicht angeordnet ist.13. Acoustic surface wave component according to one of claims 1 to 12, characterized in that a diffusion barrier and / or adhesion promoter layer is arranged between the strip structures and the non-piezoelectric substrate and / or between the layers of the multilayer layer and / or between the strip structures and the piezoelectric material ,
14. Akustisches Oberflächenwellenbauelement nach Anspruch 13, dadurch gekennzeichnet, dass die14. Acoustic surface wave component according to claim 13, characterized in that the
Diffusionsbarriereschicht aus Ta, Ti, W, Ag, Au, AI oder deren Oxiden oder Nitriden oder Flouriden oder ausDiffusion barrier layer made of Ta, Ti, W, Ag, Au, Al or their oxides or nitrides or fluorides or from
Multischichten von diesen Materialien besteht.Multi-layers of these materials exist.
15. Akustisches Oberflächenwellenbauelement nach Anspruch15. Acoustic surface wave component according to claim
13, dadurch gekennzeichnet, dass die13, characterized in that the
Haftvermittlerschicht aus Cr, Ti, W, Ta, Si oder deren Verbindungen besteht.Adhesion layer consists of Cr, Ti, W, Ta, Si or their compounds.
16. Akustisches Oberflächenwellenbauelement nach Anspruch 1, dadurch gekennzeichnet, dass im Falle der Ausführung der Streifenstrukturen mit nanokristallinem Gefüge die Korngrößen überwiegend < 50 nm sind. 16. Acoustic surface wave component according to claim 1, characterized in that in the case of the execution of the strip structures with a nanocrystalline structure, the grain sizes are predominantly <50 nm.
7. Akustisches Oberflächenwellenbauelement nach einem der Ansprüche 1 bis 16, dadurch gekennzeichnet, dass die Streifenstrukturen aus einer Cu-Basislegierung der Zusammensetzung Cu(ιoo-x)Agx bestehen, wobei x auf einen Wert im Bereich von 59 bis 62, insbesondere auf den Wert von 60,1 eingestellt ist, bei dem der eutektische Punkt der Legierung liegt. 7. Acoustic surface wave component according to one of claims 1 to 16, characterized in that the strip structures consist of a Cu-based alloy of the composition Cu ( ιoo- x ) Ag x , where x has a value in the range from 59 to 62, in particular on the A value of 60.1 is set at which the eutectic point of the alloy lies.
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DE10107804 | 2001-02-16 | ||
DE10107804 | 2001-02-16 | ||
PCT/DE2002/000571 WO2002067423A1 (en) | 2001-02-16 | 2002-02-15 | Acoustic surface wave component |
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EP1362420A1 true EP1362420A1 (en) | 2003-11-19 |
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EP02714026A Withdrawn EP1362420A1 (en) | 2001-02-16 | 2002-02-15 | Acoustic surface wave component |
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US (1) | US6853115B2 (en) |
EP (1) | EP1362420A1 (en) |
JP (1) | JP2004519171A (en) |
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CN (1) | CN1457549A (en) |
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DE10216559B4 (en) * | 2002-04-09 | 2007-08-09 | Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. | Acoustic surface acoustic wave device and method for its production |
DE10236003B4 (en) * | 2002-08-06 | 2013-12-24 | Epcos Ag | Method for producing a component with a power-compatible electrode structure |
JP4064208B2 (en) * | 2002-10-31 | 2008-03-19 | アルプス電気株式会社 | Surface acoustic wave device and manufacturing method thereof |
DE10302633B4 (en) * | 2003-01-23 | 2013-08-22 | Epcos Ag | SAW device with improved temperature response |
WO2005083881A1 (en) | 2004-03-02 | 2005-09-09 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
EP1867980A4 (en) * | 2005-04-06 | 2014-03-05 | Murata Manufacturing Co | Surface wave sensor device |
JP4279271B2 (en) * | 2005-06-01 | 2009-06-17 | アルプス電気株式会社 | Surface acoustic wave device and manufacturing method thereof |
US7373838B2 (en) * | 2005-06-03 | 2008-05-20 | Honeywell International Inc. | Acoustic wave flow sensor for high-condensation applications |
CN100435482C (en) * | 2005-09-30 | 2008-11-19 | 哈尔滨工业大学 | Amorphous diamond intensified frequency substrate of thin-film sound surface wave device and its preparing method |
CH698809B1 (en) * | 2006-04-20 | 2009-10-30 | Capital Formation Inc | Cover for harsh environments and sensors having this cover. |
KR100889044B1 (en) * | 2007-08-09 | 2009-03-19 | 주식회사 엠디티 | SAW sensor |
DE102009021508B4 (en) * | 2009-05-15 | 2014-05-22 | Epcos Ag | Electrode with improved power resistance |
JP5378927B2 (en) * | 2009-09-25 | 2013-12-25 | 太陽誘電株式会社 | Method for manufacturing acoustic wave device |
CN101986563B (en) * | 2010-10-18 | 2013-08-28 | 华为技术有限公司 | Surface acoustic wave (SAW) filter and manufacturing method thereof |
DE112012000503B4 (en) * | 2011-01-19 | 2017-12-07 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device |
US8723392B2 (en) | 2011-07-15 | 2014-05-13 | International Business Machines Corporation | Saw filter having planar barrier layer and method of making |
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DE10206480A1 (en) | 2002-09-19 |
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