EP1279928A2 - Magnetfeldsensor - Google Patents

Magnetfeldsensor Download PDF

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Publication number
EP1279928A2
EP1279928A2 EP02014862A EP02014862A EP1279928A2 EP 1279928 A2 EP1279928 A2 EP 1279928A2 EP 02014862 A EP02014862 A EP 02014862A EP 02014862 A EP02014862 A EP 02014862A EP 1279928 A2 EP1279928 A2 EP 1279928A2
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EP
European Patent Office
Prior art keywords
magnetic field
voltage
circuit
synchronizing signal
switch
Prior art date
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Withdrawn
Application number
EP02014862A
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English (en)
French (fr)
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EP1279928A3 (de
Inventor
Tadata Hatanaka
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Panasonic Corp
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Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of EP1279928A2 publication Critical patent/EP1279928A2/de
Publication of EP1279928A3 publication Critical patent/EP1279928A3/de
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
    • G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
    • G01D3/02—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups with provision for altering or correcting the law of variation

Definitions

  • the present invention relates to a magnetic field sensor capable of detecting an intensity of a magnetic field independently of the polarity of the magnetic field.
  • a voltage is generated between output terminals of a Hall element by the Hall effect in proportion to the density of a magnetic flux passing through the Hall element, the generated voltage is amplified by an amplifier, and whether or not the intensity of the detected magnetic field is greater than a predetermined magnetic field intensity is determined by a comparator, using the amplified signal.
  • a magnetic field sensor is produced by monolithically integrating bipolar transistors or CMOS devices.
  • One factor that dictates the performance of a magnetic field sensor product is the scattering in a detection value occurring while the detected magnetic field is converted into a voltage and subjected to a comparison.
  • There are two primary causes of the scattering one being a Hall element offset signal component, which is caused by, for example, a stress from an encapsulation package, and the other being an input-offset signal component to the amplifier.
  • a method for compensating for the Hall element offset signal component is shown in United States Patent No. 4,037,150.
  • the method shows a Hall element having geometrically equivalent four terminals, or two pairs of output terminals, the output terminals of each pair opposing each other.
  • the potential differences between one pair of output terminals and between the other pair thereof are output alternately in response to the first phase and the second phase, respectively, of a synchronizing signal that triggers a detection operation, and then the sum of the output values is obtained.
  • the effective signal value is doubled because the effective signal components are of the same phase, and the offset signal components are canceled out by each other because they are of the opposite phases.
  • Another factor that determines the performance of a magnetic field sensor product is whether it is capable of a bipolar detection, i.e., detecting a magnetic field irrespective of the polarity of a magnet built in the product. If the magnetic field intensity can be determined irrespective of the polarity of a magnet, it is no longer necessary, in a position sensor, or the like, having a magnet and a Hall IC being built therein, to manage the direction of the magnet when determining the position of the magnet.
  • FIG. 8 shows a conventional magnetic field sensor disclosed in Japanese Laid-Open Patent Publication No. 7-83699, which is capable of a bipolar determination of a magnetic field intensity.
  • the conventional magnetic field sensor has a Hall element 101 ; a voltage amplifier 102 for amplifying the output voltage from the Hall element 101 ; a first Schmitt trigger circuit 103A for receiving the output voltage from the voltage amplifier 102 and outputting different output voltages based on the threshold value thereof; a second Schmitt trigger circuit 103B for receiving the output voltage from the voltage amplifier 102 while the polarity thereof is inverted from the polarity of the input signal to the first Schmitt trigger circuit 103A ; and a logic latch circuit 104 for receiving and latching the output signals from the first Schmitt trigger circuit 103A and the second Schmitt trigger circuit 103B .
  • the voltage amplifier 102 amplifies a Hall voltage that is generated between output terminals of the Hall element 101 in proportion to a density of the magnetic flux passing through the Hall element 101 to obtain an amplified voltage VH.
  • the amplified voltage VH is input to the first Schmitt trigger circuit 103A and the second Schmitt trigger circuit 103B , each of which determines whether the value of the amplified voltage VH is greater than a predetermined voltage value so as to output a determination value.
  • the first Schmitt trigger circuit 103A and the second Schmitt trigger circuit 103B are equivalent to each other, and the detection of a magnetic field intensity level for the north polarity and that for the south polarity are performed separately by using the two Schmitt trigger circuits 103A and 103B , with input signals of the opposite polarities, respectively.
  • the output values of the first and the second Schmitt trigger circuits 103A and 103B are input to the logic latch circuit 104 . Then, the logic latch circuit 104 outputs an output value obtained by performing an operation on the output values from the two Schmitt trigger circuits 103A and 103B corresponding to a magnetic field intensity for the north polarity and a magnetic field intensity for the south polarity.
  • the output value from the logic latch circuit 104 is a binary value that is irrespective of the polarity and that indicates whether the intensity of the detected magnetic field is greater than that of a predetermined magnetic field.
  • the conventional magnetic field sensor involves difficulties in reducing both the circuit scale and the current consumption thereof because it requires two Schmitt trigger circuits as voltage comparison circuits that perform a bipolar detection of magnetic field intensity irrespective of the polarity of the magnetic field.
  • the present invention has its object of solving the problems in the prior art by enabling a bipolar detection of a magnetic field intensity irrespective of the polarity of the magnetic field with a simple configuration and with a reduced current consumption.
  • the present invention provides a magnetic field sensor in which a switch circuit for inverting the polarity of a Hall voltage is provided in a stage preceding a voltage comparison circuit that compares an amplified Hall voltage with a reference voltage, wherein the voltage comparison circuit inverts the polarity of a hysteresis voltage that determines a reference value of a magnetic field intensity in response to first and second synchronizing signals.
  • a first magnetic field sensor of the present invention includes: a Hall element; a voltage amplifier for amplifying an output voltage from the Hall element so as to output an amplified signal; a voltage comparison circuit for receiving the amplified signal; a switch circuit provided between the voltage amplifier and the voltage comparison circuit for inverting a polarity of the amplified signal; and a latch circuit for holding an output signal from the voltage comparison circuit, wherein the voltage comparison circuit inverts a polarity of a hysteresis voltage that determines a reference value of a magnetic field intensity in response to a first synchronizing signal, which triggers a detection of a magnetic field, and a second synchronizing signal following the first synchronizing signal.
  • a bipolar voltage comparison can be made with a single voltage comparator irrespective of the polarity of the magnetic field, whereby the magnetic field intensity can be detected with a simple form and with a reduced current consumption.
  • the latch circuit includes a first flip-flop circuit and a second flip-flop circuit for receiving binary values in response to the first synchronizing signal and the second synchronizing signal, respectively, so as to hold an operated value, which is obtained by an operation on the binary values, in response to the second synchronizing signal as an output value.
  • a second magnetic field sensor of the present invention includes: a Hall element including two pairs of external terminals; a first switch circuit connected to the two pairs of external terminals for selecting one of the two pairs of external terminals as output terminals; a voltage amplifier for amplifying an output voltage of the Hall element receiving via the first switch circuit and outputting an amplified signal; a memory device for storing the amplified signal; a second switch circuit provided between the voltage amplifier and the memory device for opening or closing a connection to the memory device; a voltage comparison circuit for receiving the amplified signal; a third switch circuit provided between the voltage amplifier and the voltage comparison circuit for inverting a polarity of the amplified signal; and a latch circuit for holding an output signal from the voltage comparison circuit, wherein: in response to a first synchronizing signal, which triggers a detection of a magnetic field, the first switch circuit selects one of the two pairs of external terminals of the Hall element as input terminals and the other one of the two pairs of external terminals of the Hall element as output terminals, with the
  • the Hall element offset signal component can be compensated for by using the pair of output terminals for the first and the second synchronizing signals since the second magnetic field sensor includes the first switch circuit connected to the two pairs of external terminals of the Hall element for selecting one of the two pairs of external terminals as output terminals.
  • the input offset signal component of the voltage amplifier can be compensated for because the second magnetic field sensor further includes the memory device for storing the amplified signal from the voltage amplifier, the second switch circuit provided between the voltage amplifier and the memory device for opening or closing the connection to the memory device, and the third switch circuit provided between the voltage amplifier and the voltage comparison circuit for inverting the polarity of the amplified signal, wherein the third switch circuit inverts the polarity of the sum of the first amplified signal and the second amplified signal in response to the third synchronizing signal.
  • the latch circuit includes a first flip-flop circuit and a second flip-flop circuit for receiving binary values in response to the second synchronizing signal and the third synchronizing signal, respectively, so as to hold an operated value, which is obtained by performing an operation on the binary values, in response to the third synchronizing signal as an output value.
  • the memory device includes a capacitor.
  • FIG. 1 illustrates a functional form of a magnetic field sensor according to the first embodiment of the present invention.
  • the magnetic field sensor of the first embodiment includes a Hall element 11 for generating a Hall voltage in proportion to the density of a magnetic flux passing therethrough; a voltage amplifier 12 for amplifying the output voltage from the Hall element 11 ; a Schmitt trigger circuit 13 , as a voltage comparison circuit, for receiving the amplified signal from the voltage amplifier 12 and outputting different output voltages based on the threshold value thereof; a switch circuit 14 provided between the voltage amplifier 12 and the Schmitt trigger circuit 13 for inverting the polarity of the amplified signal; and a logic latch circuit 15 for receiving and latching the output signal from the Schmitt trigger circuit 13 .
  • FIG. 2 is a timing chart illustrating a first synchronizing signal CK1, which triggers the detection of a magnetic field intensity by the magnetic field sensor of the first embodiment, and a second synchronizing signal CK2 following the first synchronizing signal CK1.
  • the amplified voltage VH in proportion to the output voltage (Hall voltage) from the Hall element 11 is generated at the output terminals of the voltage amplifier 12 .
  • the Schmitt trigger circuit 13 receives the amplified voltage VH via the switch circuit 14 .
  • the south polarity is detected, as illustrated in FIG. 3A .
  • an output value that shows whether the intensity of the detected magnetic field is greater than the intensity of a predetermined magnetic field is input to the logic latch circuit 15 , and the logic latch circuit 15 latches the output value at the end of the first phase.
  • the amplified voltage VH output from the voltage amplifier 12 is input to the Schmitt trigger circuit 13 while the polarity thereof is inverted by the switch circuit 14 from that in the first phase. Therefore, the polarity of the detected magnetic field is the north polarity, i.e., opposite to that in the first phase. Moreover, the polarity of the predetermined magnetic field, which is determined in the Schmitt trigger circuit 13 , is also inverted. Therefore, an output value can be obtained that indicates whether or not the intensity of the detected magnetic field is greater than the intensity of the predetermined magnetic field for the north polarity, as illustrated in FIG. 3B, and the output value is input to the logic latch circuit 15. Note that while the south polarity and the north polarity are detected in 'the first and second phases, respectively, this may be reversed.
  • the output values from the Schmitt trigger circuit 13 in the first and second phases i.e., two output values indicating whether the intensity of the detected magnetic field is greater than that of the predetermined magnetic field for the north polarity and the south polarity, illustrated in FIG. 3A and FIG. 3B , respectively, are subjected to an operation to obtain a desired output value. Therefore, at the end of the second phase, the operated value is latched, thus obtaining a binary output value that indicates whether or not the intensity of the detected magnetic field is greater than that of the predetermined magnetic field irrespective of the polarity of the magnetic field, as illustrated in FIG. 4 .
  • the magnetic field sensor of the first embodiment can be realized only with a single voltage comparison circuit (Schmitt trigger circuit 13 ), whereby it is possible to reduce the circuit scale and the current consumption.
  • FIG. 5 is a circuit configuration of a magnetic field sensor according to the second embodiment of the present invention.
  • like elements to those illustrated in FIG. 1 are denoted by like reference numerals, and those elements will not be further described below.
  • a switch circuit denoted by reference numeral 14 will be referred to as the "second switch circuit”.
  • the magnetic field sensor of the second embodiment is similar to that of the first embodiment, and further includes a first switch circuit 16 , a memory device 17 made of a capacitor, and a third switch circuit 18 .
  • the first switch circuit 16 is provided between the Hall element 11 , which includes geometrically equivalent four terminals, and the voltage amplifier 12 .
  • the first switch circuit 16 selects one of two pairs of output terminals of the Hall element 11 as input terminals and the other pair of the output terminals of the Hall element 11 as output terminals, with the output terminals of each pair opposing each other diagonally.
  • the memory device 17 is provided between the voltage amplifier 12 and the second switch circuit 14 for storing (holding) the amplified signal from the voltage amplifier 12 .
  • the third switch circuit 18 opens or closes the connection of one output terminal of the voltage amplifier 12 to one electrode of the memory device 17 and one input terminal of the second switch circuit 14 .
  • FIG. 6 is a timing chart illustrating a first synchronizing signal CK1, which triggers the detection of a magnetic field intensity by the magnetic field sensor of the second embodiment; a second synchronizing signal CK2 following the first synchronizing signal CK1; and a third synchronizing signal CK3 following the second synchronizing signal CK2.
  • a first amplified voltage VH1 in proportion to the output voltage (Hall voltage) given from the Hall element 11 , is generated at the output terminals of the voltage amplifier 12 .
  • the third switch circuit 18 is closed, whereby the first amplified voltage VH1 is held by the memory device 17 .
  • the Hall element 11 outputs an Hall voltage through output terminals different from those used in the first phase, as selected by the first switch circuit 16 .
  • a second amplified voltage VH2 output from the voltage amplifier 12 , is a voltage whose polarity is opposite to that of the first amplified voltage VH1.
  • the third switch circuit 18 transits to the open state.
  • the first amplified voltage VH1 of the first phase having been held by the memory device 17 , and the second amplified voltage VH2 of the second phase are added together to give a sum output voltage VH.
  • the effective signal value of the sum output voltage VH is doubled because the effective signal components are in the same phase, and the offset signal components thereof are canceled out by each other because they are of the opposite phases.
  • the sum output voltage VH is an accurate magnetic field detection value that includes neither the Hall element offset signal component, which is caused by, for example, a stress from an encapsulation package that encapsulates the magnetic field sensor, nor the amplifier input offset signal component.
  • the sum output voltage VH is received by the Schmitt trigger circuit 13 via the switch circuit 14 .
  • the Schmitt trigger circuit 13 detects either the north polarity or the south polarity, and outputs, to the logic latch circuit 15, the sum output voltage VH corresponding to the intensity of the detected magnetic field, as the output value that indicates whether or not the intensity of the detected magnetic field is greater than the intensity of the predetermined magnetic field.
  • the output value is latched by the logic latch circuit 15 at the end of the second phase.
  • the voltage value VH of the first and second phases is applied to the Schmitt trigger circuit 13 while the polarity thereof is inverted by the second switch circuit 14 from that in the second phase. Therefore, the polarity of the detected magnetic field is opposite to that in the second phase. Moreover, the polarity of the predetermined magnetic field, which is determined in the Schmitt trigger circuit 13 , is also inverted. Therefore, the intensity of the predetermined magnetic field is subjected to a comparison with the polarity thereof being opposite to that in the second phase.
  • the output value from the Schmitt trigger circuit 13 which indicates the comparison result, is input to the logic latch circuit 15 .
  • the output values from the Schmitt trigger circuit 13 in the second and third phases i.e., two output values indicating whether or not the intensity of the detected magnetic field is greater than that of the predetermined magnetic field for the north polarity and the south polarity, respectively, are subjected to an operation to obtain a desired output value. Therefore, at the end of the third phase, the operated value is latched, thus obtaining a binary output value that indicates whether or not the intensity of the detected magnetic field is greater than that of the predetermined magnetic field irrespective of the polarity of the magnetic field, as illustrated in FIG. 4 .
  • the first switch circuit 16 , the memory device 17 and the third switch circuit 18 are added to the configuration of the magnetic field sensor of the first embodiment, thereby reducing the circuit scale and the current consumption of the magnetic field sensor capable of a bipolar detection of a magnetic field intensity irrespective of the polarity of the magnetic field. Moreover, it is possible to reduce the scattering in the detected magnetic field which occur while the detected magnetic field is converted into a voltage and subjected to a comparison, due to the Hall element offset signal component, which is caused by, for example, a stress from a package that encapsulates the magnetic field sensor, and the amplifier input offset signal component.
  • FIG. 7 schematically illustrates a circuit configuration of the magnetic field sensor according to the second embodiment of the present invention.
  • the first switch circuit 16 includes a first switch 21A , a second switch 21B , a third switch 22A and a fourth switch 22B .
  • the power supply voltage is applied to one end of each of the first switch 21A and the second switch 21B , and the other end of each of the first switch 21A and the second switch 21B is connected to an external terminal of the Hall element 11 .
  • One end of each of the third switch 22A and the fourth switch 22B is grounded, and the other end thereof is connected to an external terminal of the Hall element 11 .
  • the first switch 21A is connected to a first external terminal located at the first apex among the four apexes of the Hall element 11 , and is closed in synchronism with the first synchronizing signal CK1.
  • the second switch 21B is connected to a second external terminal located at the second apex adjacent to the first apex of the Hall element 11 , and is closed in synchronism with the second synchronizing signal CK2.
  • the third switch 22A is connected to a third external terminal located at the third apex opposing the first apex of the Hall element 11 , and is closed in synchronism with the first synchronizing signal CK1.
  • the fourth switch 22B is connected to a fourth external terminal located at the fourth apex opposing the second apex of the Hall element 11, and is closed in synchronism with the second synchronizing signal CK2.
  • the first switch circuit 16 further includes a fifth switch 23A , a sixth switch 23B , a seventh switch 24A and an eighth switch 24B .
  • the fifth switch 23A has one end connected to the second external terminal of the Hall element 11 and the other end connected to the positive phase terminal of the voltage amplifier 12 , and is closed in synchronism with the first synchronizing signal CK1.
  • the sixth switch 23B has one end connected to the first external terminal of the Hall element 11 and the other end connected to the positive phase input terminal of the voltage amplifier 12 , and is closed in synchronism with the second synchronizing signal CK2.
  • the seventh switch 24A has one end connected to the fourth external terminal of the Hall element 11 and the other end connected to the negative phase input terminal of the voltage amplifier 12 , and is closed in synchronism with the first synchronizing signal CK1.
  • the eighth switch 24B has one end connected to the third external terminal of the Hall element 11 and the other end connected to the negative phase input terminal of the voltage amplifier 12 , and is closed in synchronism with the second synchronizing signal CK2.
  • the Schmitt trigger circuit 13 includes a trigger circuit main body 13A, a first switch 31B, a second switch 31C, a third switch 32B, a fourth switch 32C, a fifth switch 34A and a sixth switch 35A.
  • the first switch 31B has one end connected to one electrode of a second memory device 33 made of a capacitor and the other end connected to the negative phase output terminal of the voltage amplifier 12 , and is closed in synchronism with the second synchronizing signal CK2.
  • the second switch 31C has one end connected to the other electrode of the second memory device 33 and the other end connected to the negative phase output terminal of the voltage amplifier 12 , and is closed in synchronism with the third synchronizing signal CK3.
  • the third switch 32B has one end connected to the other end of the second memory device 33 and the other end connected to the second switch circuit 14 , and is closed in synchronism with second synchronizing signal CK2.
  • the fourth switch 32C has one end connected to one electrode of the second memory device 33 and the other end connected to the second switch circuit 14 , and is closed in synchronism with the third synchronizing signal CK3.
  • the fifth switch 34A has one end connected to the other electrode of the second memory device 33 and the other end connected to a first MOS switch 36 , and is closed in synchronism with the first synchronizing signal CK1.
  • the sixth switch 35A has one end connected to one electrode of the second memory device 33 and the other end connected to a setting voltage source 38 for setting a hysteresis value (predetermined magnetic field), and is closed in synchronism with the first synchronizing signal CK1.
  • the Schmitt trigger circuit 13 further includes a second MOS switch 37 and a first inverter 39 .
  • the second MOS switch 37 has one end connected to one terminal of the first MOS switch 36 on the side closer to the fifth switch 34A and the other end connected to the setting voltage source 38 .
  • the first inverter 39 has an input terminal connected to the output terminal of the logic latch circuit 15 , and an output terminal connected to the gate electrode of the PMOS of the first MOS switch 36 and to the gate electrode of the NMOS of the second MOS switch 37 .
  • the gate electrode of the NMOS of the first MOS switch 36 and the gate electrode of the PMOS of the second MOS switch 37 are connected to the output terminal of the logic latch circuit 15 .
  • the second switch circuit 14 includes a first switch 41B , a second switch 41C , a third switch 42B and a fourth switch 42C .
  • the first switch 41B has one end connected to the first memory device 17 and the other end connected to the positive phase input terminal of the trigger circuit main body 13A , and is closed in synchronism with the second synchronizing signal CK2.
  • the second switch 41C has one end connected to the first memory device 17 and the other end connected to the negative phase input terminal of the trigger circuit main body 13A , and is closed in synchronism with the third synchronizing signal CK3.
  • the third switch 42B has one end connected to the third switch 32B of the Schmitt trigger circuit 13 and the other end connected to the negative phase input terminal of the trigger circuit main body 13A , and is closed in synchronism with the second synchronizing signal CK2.
  • the fourth switch 42C has one end connected to the third switch 32B of the Schmitt trigger circuit 13 and the other end connected to the positive phase input terminal of the trigger circuit main body 13A , and is closed in synchronism with the third synchronizing signal CK3.
  • the logic latch circuit 15 includes a first flip-flop 51 , a 2-input NOR gate 52 and a second flip-flop 53 .
  • the first flip-flop 51 has its input terminal connected to the output terminal of the trigger circuit main body 13A , and receives the second synchronizing signal CK2 at its clock terminal.
  • the 2-input NOR gate 52 receives the output signal from the trigger circuit main body 13A at one input terminal thereof, and receives the output signal from the first flip-flop 51 at the other input terminal thereof.
  • the second flip-flop 53 receives the output signal from the 2-input NOR gate 52 at its input terminal, and receives the third synchronizing signal CK3 at its clock terminal.
  • a second inverter 19 as an output buffer for receiving the output signal from the second flip-flop 53 is connected in the stage following the logic latch circuit 15 .
  • the first switch 21A , the third switch 22A , the fifth switch 23A and the seventh switch 24A of the first switch circuit 16 are closed, and the second switch 21B, the fourth switch 22B , the sixth switch 23B and the eighth switch 24B thereof are opened.
  • the output voltage from the second and fourth external terminals of the Hall element 11 is input to the voltage amplifier 12 .
  • the output voltage from the voltage amplifier 12 at this time is used as the first amplified voltage VH1.
  • the third switch circuit 18 is closed, whereby the first amplified voltage VH1 is held by the first memory device 17 .
  • a hysteresis value corresponding to the external magnetic field is determined by the setting voltage source 38 in the Schmitt trigger circuit 13 .
  • the determined hysteresis value is received by the second memory device 33 through the fifth switch 34A and the sixth switch 35A and through the first MOS switch 36 or the second MOS switch 37 .
  • the first switch 21A, the third switch 22A , the fifth switch 23A and the seventh switch 24A of the first switch circuit 16 are opened, and the second switch 21B, the fourth switch 22B, the sixth switch 23B and the eighth switch 24B thereof are closed.
  • the output voltage from the first and third external terminals of the Hall element 11 is input to the voltage amplifier 12 . Therefore, the second amplified voltage VH2 from the voltage amplifier is a voltage of the opposite polarity to the first amplified voltage VH1 of the first phase.
  • the third switch circuit 18 is opened, thereby obtaining the sum VH of the first amplified voltage VH1 of the first phase, which has been held by the first memory device 17 , and the second amplified voltage VH2 of the second phase.
  • the sum VH of the amplified voltages is an accurate magnetic field detection value that does not include the input offset signal component.
  • the sum output voltage VH is received by the Schmitt trigger circuit 13 via the second switch circuit 14 .
  • the first switch 41B and the third switch 42B of the second switch circuit 14 are closed, and the second switch 41C and the fourth switch 42C thereof are open. Therefore, the polarity of the voltage amplifier 12 is the same as that of the trigger circuit main body 13A .
  • the trigger circuit main body 13A detects either one of the polarities, and outputs, to the logic latch circuit 15 , a sam of the output voltage VH corresponding to the intensity of the detected magnetic field, as a value that indicates whether or not the intensity of the detected magnetic field is greater than the intensity of the predetermined magnetic field.
  • the voltage value corresponding to the predetermined magnetic field and having been held by the second memory device 33 is also input to the Schmitt trigger circuit 13 .
  • the output signal from the trigger circuit main body 13A is input to the first flip-flop 51 of the logic latch circuit 15 .
  • the output signal is latched by the first flip-flop 51 and is also input to the 2-input NOR gate 52 .
  • the first switch 41B and the third switch 42B of the second switch circuit 14 are opened, and the second switch 41C and the fourth switch 42C thereof are closed.
  • the sum output voltage VH from the voltage amplifier 12 in the first and second phases is input to the Schmitt trigger circuit 13 while the polarity thereof is inverted. Therefore, the polarity of the detected magnetic field is opposite to that in the second phase.
  • the second switch 31C and the fourth switch 32C of the Schmitt trigger circuit 13 are closed, and the first switch 31B , the third switch 32B , the fifth switch 34A and the sixth switch 35A thereof are open.
  • the polarity of the predetermined magnetic field value which is held by the second memory device 33 , is also inverted, and thus a comparison can be made with the predetermined magnetic field having the opposite polarity to that in the second phase.
  • the output value is input to one of the input terminals of the 2-input NOR gate 52 that is not connected with the first flip-flop 51.
  • the output values from the Schmitt trigger circuit 13 in the second and third phases i.e., two output values indicating whether or not the intensity of the detected magnetic field is greater than that of the predetermined magnetic field for the north polarity and the south polarity, respectively, are subjected to an operation to obtain an output value.
  • the output value from the 2-input NOR gate 52 is latched by the second flip-flop 53 , thus obtaining a binary output value that indicates whether or not the intensity of the detected magnetic field is greater than that of the predetermined magnetic field irrespective of the polarity of the magnetic field.
  • circuit configuration of the Schmitt trigger circuit 13 of the second embodiment may be applied to the Schmitt trigger circuit 13 of the first embodiment.
  • circuit configuration of the second switch circuit 14 of the second embodiment may be applied to the switch circuit 14 of the first embodiment, and the circuit configuration of the logic latch circuit 15 of the second embodiment may be applied to the logic latch circuit 15 of the first embodiment.

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Measuring Magnetic Variables (AREA)
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EP02014862A 2001-07-26 2002-07-04 Magnetfeldsensor Withdrawn EP1279928A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001225685A JP4451577B2 (ja) 2001-07-26 2001-07-26 磁界センサ
JP2001225685 2001-07-26

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EP1279928A2 true EP1279928A2 (de) 2003-01-29
EP1279928A3 EP1279928A3 (de) 2005-05-11

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EP02014862A Withdrawn EP1279928A3 (de) 2001-07-26 2002-07-04 Magnetfeldsensor

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US (1) US6727684B2 (de)
EP (1) EP1279928A3 (de)
JP (1) JP4451577B2 (de)
KR (1) KR20030010539A (de)
CN (1) CN1295518C (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7459887B2 (en) 2004-10-29 2008-12-02 Panasonic Corporation Voltage detection circuit, overcurrent detection circuit, charging current control system, and voltage detection method
FR2920534A1 (fr) * 2007-12-14 2009-03-06 Siemens Vdo Automotive Sas Capteur de position
CN107437934A (zh) * 2017-09-08 2017-12-05 上海灿瑞科技股份有限公司 一种全极性霍尔传感器开关

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4451577B2 (ja) * 2001-07-26 2010-04-14 パナソニック株式会社 磁界センサ
JP3609069B2 (ja) * 2002-08-01 2005-01-12 ファナック株式会社 モータ制御装置
FR2846749B1 (fr) * 2002-11-04 2005-01-07 Siemens Vdo Automotive Dispositif de mesure de l'intensite d'un courant electrique
US6960816B2 (en) * 2003-04-28 2005-11-01 Knowles Electronics, Llc. System and method for sensing a magnetic field
JP4242800B2 (ja) * 2004-03-26 2009-03-25 東光株式会社 センサ回路
JP4514104B2 (ja) * 2004-03-30 2010-07-28 旭化成エレクトロニクス株式会社 磁気検出装置
US7518414B2 (en) * 2004-12-13 2009-04-14 Allegro Microsystems, Inc. Track-and-hold peak detector circuit
EP1850143A1 (de) * 2005-02-08 2007-10-31 Rohm Co., Ltd. Magnetsensorschaltung und mit einer solchen magnetsensorschaltung ausgestattetes tragbares endgerät
CN2852533Y (zh) * 2005-06-15 2006-12-27 易亨电子股份有限公司 磁感应切换电路及使用该电路的电子装置
US7481400B2 (en) * 2005-07-01 2009-01-27 Portec, Rail Products Ltd. Railway wheel sensor
JP4784186B2 (ja) * 2005-07-19 2011-10-05 株式会社デンソー 縦型ホール素子およびその磁気検出感度調整方法
KR100720620B1 (ko) * 2005-11-21 2007-05-22 (주)에이디테크놀로지 자석의 극성에 따른 자계센서 출력 보정회로, 그보정회로를 포함하는 포인팅 장치 및 디지털 단말기
US7847536B2 (en) * 2006-08-31 2010-12-07 Itron, Inc. Hall sensor with temperature drift control
US7570044B2 (en) * 2007-02-19 2009-08-04 Kabushiki Kaisha Toshiba Signal detecting circuit
JP4897585B2 (ja) * 2007-06-22 2012-03-14 ローム株式会社 磁気センサ回路及びこれを用いた電子機器
JP5052982B2 (ja) * 2007-07-25 2012-10-17 セイコーインスツル株式会社 磁気センサ回路
JP4786608B2 (ja) 2007-07-30 2011-10-05 パナソニック株式会社 磁界検出装置
JP2009156699A (ja) 2007-12-26 2009-07-16 Toshiba Corp 磁気検出回路
JP4675994B2 (ja) * 2008-08-27 2011-04-27 株式会社東芝 磁気センサ及び磁気測定方法
CN102460188B (zh) 2009-04-16 2015-09-16 全景电力有限公司 用于在断路器点的功率消耗测量的设备和方法
US9678114B2 (en) 2009-04-16 2017-06-13 Panoramic Power Ltd. Apparatus and methods thereof for error correction in split core current transformers
US9134348B2 (en) 2009-04-16 2015-09-15 Panoramic Power Ltd. Distributed electricity metering system
JP5285585B2 (ja) * 2009-12-02 2013-09-11 セイコーインスツル株式会社 磁気センサ装置
CN101782634B (zh) * 2010-02-23 2013-07-10 南京大学 一种片上一体化微型集成磁传感器
CN101833073A (zh) * 2010-05-18 2010-09-15 苏州和迈微电子技术有限公司 一种片上一体化cmos锁存型霍尔传感器
JP5411818B2 (ja) * 2010-08-26 2014-02-12 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
KR20120052448A (ko) * 2010-11-15 2012-05-24 삼성전기주식회사 정류회로를 이용한 홀 집적회로
CN102135604B (zh) * 2011-02-25 2013-05-01 哈姆林电子(苏州)有限公司 磁场测量装置
CN102916007A (zh) * 2011-08-02 2013-02-06 上海腾怡半导体有限公司 一种3-d霍尔传感器及其制造方法
JP5736288B2 (ja) * 2011-09-27 2015-06-17 セイコーインスツル株式会社 磁気センサ装置
US20130249543A1 (en) * 2012-03-20 2013-09-26 Samsung Electro-Mechanics Co., Ltd Correction Circuit for Output Duty of Hall Element, Hall Sensor and Method of Correcting Output Duty of Hall Element
CN102854535B (zh) * 2012-08-24 2015-03-11 中国船舶重工集团公司第七二二研究所 一种宽带磁性传感器
JP6166124B2 (ja) * 2013-08-15 2017-07-19 旭化成エレクトロニクス株式会社 信号処理回路
JP6158682B2 (ja) * 2013-10-25 2017-07-05 エスアイアイ・セミコンダクタ株式会社 磁気センサ回路
US9891252B2 (en) 2015-07-28 2018-02-13 Panoramic Power Ltd. Thermal management of self-powered power sensors
US10024885B2 (en) 2015-07-28 2018-07-17 Panoramic Power Ltd. Thermal management of self-powered power sensors
CN106556803B (zh) * 2015-09-24 2019-06-25 南京理工大学 一种谐振型磁传感器
RU2614923C1 (ru) * 2015-12-22 2017-03-30 Открытое акционерное общество Арзамасское научно-производственное предприятие "ТЕМП-АВИА" (ОАО АНПП "ТЕМП-АВИА") Датчик магнитного поля
US10436856B2 (en) 2015-12-24 2019-10-08 Asahi Kasei Microdevices Corporation Magnetic sensor apparatus and current sensor apparatus
JP6591953B2 (ja) * 2015-12-24 2019-10-16 旭化成エレクトロニクス株式会社 磁気センサ装置および電流センサ装置
DE102017106789A1 (de) * 2016-04-01 2017-10-05 Johnson Electric S.A. Magnetsensor, Motoranordnung und Gebrauchsgerät
CN106153084B (zh) * 2016-08-24 2018-11-27 成都芯进电子有限公司 一种磁灵敏度温度补偿电路和可编程线性霍尔传感器芯片
WO2019022794A1 (en) 2017-07-26 2019-01-31 Panoramic Power Ltd. TIME SYNCHRONIZATION OF SELF-POWERED POWER SENSORS AND CENTRAL CONTROL DEVICE Y COLLECTING SAMPLES
EP3659236B1 (de) 2017-07-26 2023-09-13 Panoramic Power Ltd. Übertragung von zeitstempeln von proben eines selbstversorgten leistungssensors
WO2019022796A1 (en) 2017-07-26 2019-01-31 Panoramic Power Ltd. SYSTEM AND METHOD FOR TIME SYNCHRONIZATION OF SELF-POWERED POWER SENSOR
US10627458B2 (en) * 2017-09-25 2020-04-21 Allegro Microsystems, Llc Omnipolar schmitt trigger
CN110120803B (zh) * 2018-02-06 2023-07-28 意瑞半导体（上海）有限公司 一种全极霍尔开关电路
CN114019431B (zh) * 2021-10-26 2024-04-09 上海空间推进研究所 极性测试装置及方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0642029A1 (de) * 1993-09-03 1995-03-08 ALLEGRO MICROSYSTEMS Inc. Ein anstiegsaktivierter Hall-Spannungssensor
US5604433A (en) * 1994-09-06 1997-02-18 Deutsche Itt Industries Gmbh Offset compensation for magnetic-field sensor with Hall effect device
US5619137A (en) * 1996-02-12 1997-04-08 Allegro Microsystems, Inc. Chopped low power magnetic-field detector with hysteresis memory
US5621319A (en) * 1995-12-08 1997-04-15 Allegro Microsystems, Inc. Chopped hall sensor with synchronously chopped sample-and-hold circuit
US5844427A (en) * 1996-03-02 1998-12-01 Deutsche Itt Industries Gmbh Monolithic integrated sensor circuit
US6154027A (en) * 1997-10-20 2000-11-28 Analog Devices, Inc. Monolithic magnetic sensor having externally adjustable temperature compensation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816766A (en) * 1973-01-29 1974-06-11 Sprague Electric Co Integrated circuit with hall cell
US4037150A (en) 1973-05-30 1977-07-19 Sergei Glebovich Taranov Method of and apparatus for eliminating the effect of non-equipotentiality voltage on the hall voltage
US4296410A (en) * 1980-02-25 1981-10-20 Sprague Electric Company Two-state Hall element proximity sensor device with lamp indicator
JPS58177031A (ja) * 1982-04-09 1983-10-17 Sharp Corp 磁気センサ−
CN1053498A (zh) * 1990-01-17 1991-07-31 鹤山县开关厂 一种电流传感器
JPH08248110A (ja) * 1995-03-14 1996-09-27 Koyo Electron Ind Co Ltd 磁気センサ
JP4451577B2 (ja) * 2001-07-26 2010-04-14 パナソニック株式会社 磁界センサ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0642029A1 (de) * 1993-09-03 1995-03-08 ALLEGRO MICROSYSTEMS Inc. Ein anstiegsaktivierter Hall-Spannungssensor
US5604433A (en) * 1994-09-06 1997-02-18 Deutsche Itt Industries Gmbh Offset compensation for magnetic-field sensor with Hall effect device
US5621319A (en) * 1995-12-08 1997-04-15 Allegro Microsystems, Inc. Chopped hall sensor with synchronously chopped sample-and-hold circuit
US5619137A (en) * 1996-02-12 1997-04-08 Allegro Microsystems, Inc. Chopped low power magnetic-field detector with hysteresis memory
US5844427A (en) * 1996-03-02 1998-12-01 Deutsche Itt Industries Gmbh Monolithic integrated sensor circuit
US6154027A (en) * 1997-10-20 2000-11-28 Analog Devices, Inc. Monolithic magnetic sensor having externally adjustable temperature compensation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7459887B2 (en) 2004-10-29 2008-12-02 Panasonic Corporation Voltage detection circuit, overcurrent detection circuit, charging current control system, and voltage detection method
FR2920534A1 (fr) * 2007-12-14 2009-03-06 Siemens Vdo Automotive Sas Capteur de position
CN107437934A (zh) * 2017-09-08 2017-12-05 上海灿瑞科技股份有限公司 一种全极性霍尔传感器开关
CN107437934B (zh) * 2017-09-08 2023-09-01 上海灿瑞微电子有限公司 一种全极性霍尔传感器开关

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CN1295518C (zh) 2007-01-17
CN1400471A (zh) 2003-03-05
EP1279928A3 (de) 2005-05-11
JP4451577B2 (ja) 2010-04-14
JP2003043123A (ja) 2003-02-13

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