EP1096552A4 - Verfahren zur ionenimplantierung - Google Patents

Verfahren zur ionenimplantierung

Info

Publication number
EP1096552A4
EP1096552A4 EP99923945A EP99923945A EP1096552A4 EP 1096552 A4 EP1096552 A4 EP 1096552A4 EP 99923945 A EP99923945 A EP 99923945A EP 99923945 A EP99923945 A EP 99923945A EP 1096552 A4 EP1096552 A4 EP 1096552A4
Authority
EP
European Patent Office
Prior art keywords
ion implantation
implantation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99923945A
Other languages
English (en)
French (fr)
Other versions
EP1096552A1 (de
Inventor
Yasuhiko Matsunaga
Majeed Ali Foad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP1096552A1 publication Critical patent/EP1096552A1/de
Publication of EP1096552A4 publication Critical patent/EP1096552A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
EP99923945A 1998-06-08 1999-06-08 Verfahren zur ionenimplantierung Withdrawn EP1096552A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15910998 1998-06-08
JP10159109A JP3054123B2 (ja) 1998-06-08 1998-06-08 イオン注入方法
PCT/JP1999/003040 WO1999065069A1 (fr) 1998-06-08 1999-06-08 Procede d'implantation d'ions

Publications (2)

Publication Number Publication Date
EP1096552A1 EP1096552A1 (de) 2001-05-02
EP1096552A4 true EP1096552A4 (de) 2001-11-07

Family

ID=15686449

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99923945A Withdrawn EP1096552A4 (de) 1998-06-08 1999-06-08 Verfahren zur ionenimplantierung

Country Status (5)

Country Link
US (1) US6583018B1 (de)
EP (1) EP1096552A4 (de)
JP (1) JP3054123B2 (de)
KR (1) KR20010043249A (de)
WO (1) WO1999065069A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7135423B2 (en) 2002-05-09 2006-11-14 Varian Semiconductor Equipment Associates, Inc Methods for forming low resistivity, ultrashallow junctions with low damage
AU2003228925A1 (en) * 2002-05-10 2003-11-11 Varian Semiconductor Equipment Associates, Inc. Methods and systems for dopant profiling
EP1596427A4 (de) 2003-02-19 2009-06-10 Panasonic Corp Verfahren zum einführen von verunreinigungen
JP2005026442A (ja) * 2003-07-02 2005-01-27 Renesas Technology Corp 半導体装置の製造方法
US7566482B2 (en) 2003-09-30 2009-07-28 International Business Machines Corporation SOI by oxidation of porous silicon
CN101436534B (zh) 2003-10-09 2012-02-08 松下电器产业株式会社 制作器件的方法以及采用该方法形成的已加工材料
JP2005223218A (ja) 2004-02-06 2005-08-18 Matsushita Electric Ind Co Ltd 不純物導入方法
US20080194086A1 (en) * 2004-06-04 2008-08-14 Yuichiro Sasaki Method of Introducing Impurity
DE102005063462B4 (de) * 2004-09-22 2017-10-12 Infineon Technologies Ag Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper
US7993465B2 (en) * 2006-09-07 2011-08-09 Applied Materials, Inc. Electrostatic chuck cleaning during semiconductor substrate processing
US7642150B2 (en) * 2006-11-08 2010-01-05 Varian Semiconductor Equipment Associates, Inc. Techniques for forming shallow junctions
WO2009001592A1 (ja) 2007-06-25 2008-12-31 Ryobi Ltd. 電動工具
CN102379005B (zh) 2009-04-13 2016-08-24 应用材料公司 用离子和中性束注入改变膜的磁性
US10083854B2 (en) * 2014-06-24 2018-09-25 Ev Group E. Thallner Gmbh Method and device for surface treatment of substrates
JP2018022715A (ja) * 2016-08-01 2018-02-08 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法
JP2019091923A (ja) * 2019-02-07 2019-06-13 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板を表面処理するための方法及び装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263358A (ja) * 1994-03-25 1995-10-13 Ulvac Japan Ltd ドープトアモルファスシリコン膜の形成方法およびその形成装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS632322A (ja) 1986-06-23 1988-01-07 Shindengen Electric Mfg Co Ltd シリコン半導体における異方性エツチング面の突起物除去方法
JP2751181B2 (ja) 1988-02-20 1998-05-18 ソニー株式会社 半導体装置の製法
JPH02307277A (ja) 1989-05-22 1990-12-20 Matsushita Electron Corp 不揮発性半導体装置の製造方法
JP2748326B2 (ja) 1989-09-08 1998-05-06 富士通株式会社 イオン注入方法
JPH03248419A (ja) 1990-02-26 1991-11-06 Mitsubishi Electric Corp 半導体製造装置
US5266510A (en) * 1990-08-09 1993-11-30 Micron Technology, Inc. High performance sub-micron p-channel transistor with germanium implant
JPH0536618A (ja) 1991-08-02 1993-02-12 Mitsubishi Electric Corp 半導体製造装置
JPH06232390A (ja) 1993-01-29 1994-08-19 Nippon Steel Corp 半導体装置のポリサイド配線の製造方法
JP2705592B2 (ja) 1994-10-14 1998-01-28 日本電気株式会社 半導体装置の製造方法
JP2699921B2 (ja) 1995-04-21 1998-01-19 日本電気株式会社 半導体装置の製造方法
US6037640A (en) * 1997-11-12 2000-03-14 International Business Machines Corporation Ultra-shallow semiconductor junction formation
US6313505B2 (en) * 1998-09-02 2001-11-06 Advanced Micro Devices, Inc. Method for forming shallow source/drain extension for MOS transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263358A (ja) * 1994-03-25 1995-10-13 Ulvac Japan Ltd ドープトアモルファスシリコン膜の形成方法およびその形成装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BOUSETTA A ET AL: "SI ULTRASHALLOW P+N JUNCTIONS USING LOW-ENERGY BORON IMPLANTATION", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 58, no. 15, 15 April 1991 (1991-04-15), pages 1626 - 1628, XP000208385, ISSN: 0003-6951 *
DOWNEY D F ET AL: "Dose-rate effects on the formation of ultra-shallow junctions with low-energy Band BF2ion implants", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 308-309, no. 1-4, 31 October 1997 (1997-10-31), pages 562 - 569, XP004110336, ISSN: 0040-6090 *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 02 29 February 1996 (1996-02-29) *
See also references of WO9965069A1 *

Also Published As

Publication number Publication date
EP1096552A1 (de) 2001-05-02
KR20010043249A (ko) 2001-05-25
JP2000012481A (ja) 2000-01-14
US6583018B1 (en) 2003-06-24
WO1999065069A1 (fr) 1999-12-16
JP3054123B2 (ja) 2000-06-19

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