EP1049117A2 - Metallkomplex-Farbstoff für eine photoelektrochemische Zelle - Google Patents

Metallkomplex-Farbstoff für eine photoelektrochemische Zelle Download PDF

Info

Publication number
EP1049117A2
EP1049117A2 EP00108862A EP00108862A EP1049117A2 EP 1049117 A2 EP1049117 A2 EP 1049117A2 EP 00108862 A EP00108862 A EP 00108862A EP 00108862 A EP00108862 A EP 00108862A EP 1049117 A2 EP1049117 A2 EP 1049117A2
Authority
EP
European Patent Office
Prior art keywords
group
independently represent
photoelectric conversion
same
integer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00108862A
Other languages
English (en)
French (fr)
Other versions
EP1049117B1 (de
EP1049117A3 (de
Inventor
Hiroo Takizawa
Tadahiko Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11117828A external-priority patent/JP2000311723A/ja
Priority claimed from JP37560999A external-priority patent/JP4285671B2/ja
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to EP10014756A priority Critical patent/EP2280404A3/de
Publication of EP1049117A2 publication Critical patent/EP1049117A2/de
Publication of EP1049117A3 publication Critical patent/EP1049117A3/de
Application granted granted Critical
Publication of EP1049117B1 publication Critical patent/EP1049117B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/10—Metal complexes of organic compounds not being dyes in uncomplexed form
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/348—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising osmium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Definitions

  • the present invention relates to a metal complex dye that is able to efficiently sensitize semiconductor particles, a photoelectric conversion device comprising semiconductor particles sensitized by the metal complex dye, and a photo-electrochemical cell comprising the photoelectric conversion device.
  • Solar cells for the solar power generation comprising a monocrystalline silicon, a polycrystalline silicon, an amorphous silicon, cadmium telluride, indium copper selenide, etc. have been the subject of practical use and a major object of research and development.
  • problems for a widespread use of the solar cell as a home power source, etc., there are such problems as a high production cost, difficulty in security of raw materials, and a long energy payback time, therefore, these obstacles must be overcome.
  • a variety of solar cells comprising organic materials are proposed with the objects of increasing the surface area of the cell, lowering the price thereof, etc. However, they generally have such defects as a low conversion efficiency and a poor durability.
  • ruthenium complex dye mentioned above have a thiocyanate group or an isothiocyanate group as a ligand. These groups are liable to be de-sulfurized by heat or light, to be converted into a cyano group. Consequently, it has been known that for the photoelectric conversion device comprising the ruthenium complex dye with these groups, a photoelectric conversion efficiency tends to be reduced by heat or light. Accordingly, for improvement of the photoelectric conversion device in stability to heat and light, it has been desired to develop a ligand exhibiting a higher stability to heat and light than those of the thiocyanate group and the isothiocyanate group.
  • ruthenium complex dyes are disadvantageous in hardly absorbing an infrared ray with a wavelength of 700 nm or more. Consequently, a photoelectric conversion device comprising such a dye exhibits a low photoelectric conversion efficiency at infrared region. Accordingly, it has been desired to develop a dye having a high absorbancy at a large wave range containing visible region to infrared region.
  • the first object of the present invention is to provide a metal complex dye having a high stability to heat and light which is able to efficiently sensitize semiconductor particles, a photoelectric conversion device comprising the metal complex dye which exhibits a high stability to heat and light, and an excellent photoelectric conversion efficiency, and a photo-electrochemical cell comprising the photoelectric conversion device.
  • the second object of the present invention is to provide a metal complex dye having a high absorbability not only at visible region but also at infrared region, which is able to efficiently sensitize semiconductor particles, a photoelectric conversion device comprising the metal complex dye which exhibits an excellent photoelectric conversion efficiency, and a photo-electrochemical cell comprising the photoelectric conversion device.
  • a metal complex dye comprising a metal atom, bidentate or tridentate ligand(s) having nitrogen atoms for coordinating to the metal atom, and monodentate or bidentate ligand(s) which coordinates to the metal atom via one or two groups with an excellent stability to heat and light such as an acyloxy group, a 1,3-diketo group, etc. has a high stability to heat and light, and can efficiently sensitize semiconductor particles, and that a photoelectric conversion device comprising the metal complex dye exhibits a high stability to heat and light, and an excellent photoelectric conversion efficiency, so that it is useful for a photo-electrochemical cell.
  • the first present invention has been accomplished by the findings.
  • the first photoelectric conversion device comprising semiconductor particles sensitized by the first metal complex dye represented by the following formula (I): M 1 (LL 1 ) m1 (X1) m2 ⁇ Cl 1 wherein M 1 represents a metal atom;
  • the first photo-electrochemical cell of the present invention is characterized by the use of the above-mentioned first photoelectric conversion device.
  • the stability to heat and light, and the photoelectric conversion efficiency are further improved by satisfying at least one of the following conditions (1) to (11).
  • M 2 is Ru
  • LL 2 is a bidentate or tridentate ligand represented by any one of the general formulae (V-1) to (V-8)
  • LL 3 is a bidentate ligand represented by the general formula (IV)
  • X 2 represents a monodentate or bidentate ligand which coordinates to M 2 via one or two groups selected from the group consisting of an acyloxy group, an acylthio group, an acylaminooxy group, a thioacyloxy group, a thioacylthio group, a thiocarbonate group, a dithiocarbonate group, a trithiocarbonate group, an alkylthio group, an arylthio group, an alkoxy group, an aryloxy group, a thiocarbamate group, a dithiocarbamate group, an acyl group, a thiocyanate
  • the first metal complex dye for use in the first photoelectric conversion device of the present invention is represented by the following general formula (I). M 1 (LL 1 ) m1 (X 1 ) m2 ⁇ Cl 1 Constitutional components of the dye will be described in detail below.
  • M 1 represents a metal atom.
  • M 1 is preferably a metal atom that is able to form four- or six-coordinated complex, more preferably Ru, Fe, Os, Cu, W, Cr, Mo, Ni, Pd, Pt, Co, Ir, Rh, Mn or Zn, particularly preferably Ru, Fe, Os or Cu, most preferably Ru.
  • LL 1 represents a bidentate or tridentate ligand represented by the following general formula (III).
  • m1 indicating the number of LL 1 is 1 or 2.
  • LL 1 's may be the same or different ligands, are preferably the same ligands.
  • m1 is preferably 1.
  • m1 is 1 when M 1 is Cu, Pd, Pt or the like and that m1 is 2 when M 1 is another metal.
  • Za, Zb and Zc independently represent nonmetallic atoms forming a 5- or 6-membered ring.
  • the 5- or 6-membered ring may be substituted or unsubstituted ring that may be a monocyclic or a condensed ring.
  • Za, Zb and Zc are preferably composed of carbon, hydrogen, nitrogen, oxygen, sulfur, phosphorus and/or halogen atoms, respectively. They preferably form an aromatic ring.
  • aromatic ring such rings as an imidazole ring, an oxazole ring, a thiazole ring and a triazole ring are preferred as a 5-membered ring, and such rings as a pyridine ring, a pyrimidine ring, a pyridazine ring and a pyrazine ring are preferred as a 6-membered ring.
  • aromatic ring such rings as an imidazole ring, an oxazole ring, a thiazole ring and a triazole ring are preferred as a 5-membered ring, and such rings as a pyridine ring, a pyrimidine ring, a pyridazine ring and a pyrazine ring are preferred as a 6-membered ring.
  • rings more preferred are an imidazole ring and a pyridine ring, and most preferred is a pyridine ring.
  • ⁇ represents 0 or 1.
  • ⁇ is preferably 0, that is, LL 1 is preferably a bidentate ligand.
  • LL 1 represents a bidentate or tridentate ligand represented by any one of the following general formulae (V-1) to (V-8).
  • LL 1 is more preferably represented by any one of the general formulae (V-1) to (V-6), particularly preferably represented by the general formulae (V-1), (V-3) or (V-6).
  • R 11 to R 18 independently represent a carboxyl group, a sulfonic acid group, a hydroxyl group, a hydroxamic acid group preferably having 1 to 20 carbon atoms such as - CONHOH, -CONCH 3 OH, etc., a phosphoryl group such as -OP(O)(OH) 2 , etc. or a phosphonyl group such as -P(O)(OH) 2 , etc.
  • a carboxyl group, a phosphonyl group and a phosphoryl group more preferred are a carboxyl group and a phosphonyl group, and the most preferred is a carboxyl group.
  • R 19 to R 26 independently represent a substituent.
  • Preferred examples thereof include an alkyl group preferably having 1 to 20 carbon atoms such as a methyl group, an ethyl group, an isopropyl group, a t-butyl group, a pentyl group, a heptyl group, a 1-ethylpentyl group, a benzyl group, a 2-ethoxyethyl group, a 1-carboxymethyl group, etc., an alkenyl group preferably having 2 to 20 carbon atoms such as a vinyl group, an allyl group, an oleyl group, etc., a cycloalkyl group preferably having 3 to 20 carbon atoms such as a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a 4-methylcyclohexyl group, etc., an aryl group preferably having 1 to 20 carbon atoms such as
  • an alkyl group an alkenyl group, an aryl group, a heterocyclic group, an alkoxy group, an alkoxycarbonyl group, an acylamino group, an amino group and a halogen atom
  • an alkyl group an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acylamino group and an amino group.
  • R 27 to R 31 independently represent an alkyl group, an alkenyl group, an aryl group or a hydrogen atom. Preferable examples of these groups are equal to those of R 19 to R 26 .
  • R 27 to R 31 are preferably a branched alkyl group or an alkyl group having a carboxyl group, independently.
  • LL 1 contains an alkyl group, an alkenyl group, etc.
  • they may be a substituted or unsubstituted group that may have a straight or branched structure.
  • LL 1 contains an aryl group, a heterocyclic group, etc.
  • they may be a substituted or unsubstituted group that may have a monocyclic or condensed ring structure.
  • R 11 to R 26 may be bonded to any carbon atom forming a ring.
  • d1 to d8, d13, d14 and d16 independently represent an integer of 0 to 4, and d9 to d12 and d15 independently represent an integer of 0 to 6.
  • d1 to d5 are preferably 1 or 2, more preferably 2.
  • d6 is preferably an integer of 0 to 2
  • d7 is preferably an integer of 1 to 3
  • d8 is preferably an integer of 0 to 3.
  • d9 to d16 are preferably an integer of 0 to 2.
  • R 11 to R 18 may be the same or different group, respectively.
  • R 19 to R 26 may be the same or different groups that may be bonded together to form a ring, respectively. It is particularly preferable that R 19 's, R 20 's, R 21 's and R 25 's are independently an alkyl group or an alkenyl group, and they are bonded together to form a ring when d9, d10, d11 and d15 are 2 or more, respectively.
  • X 1 represents a monodentate or bidentate ligand which coordinates to M 1 via one or two groups selected from the group consisting of an acyloxy group preferably having 1 to 20 carbon atoms such as an acetyloxy group, a benzoyloxy group, a glycyloxy group, an N,N-dimethylglycyloxy group, a salicyloyloxy group, a oxalylene group (-OC(O)C(O)O-), etc., an acylthio group preferably having 1 to 20 carbon atoms such as an acetylthio group, a benzoylthio group, etc., an acylaminooxy group preferably having 1 to 20 carbon atoms such as an N-methylbenzoylaminooxy group (PhC(O)N(CH 3 )O-), an acetylaminooxy group (CH 3 C(O)NHO-), etc.,
  • X 1 is preferably a monodentate or bidentate ligand which coordinates to M 1 via one or two groups selected from the group consisting of an acyloxy group, an acylaminooxy group, an alkylthio group, an arylthio group, an alkoxy group and an aryloxy group, or a monodentate or bidentate ligand selected from the group consisting of ketones, thiocarbonamides, thioureas and isothioureas, more preferably a ligand which coordinates to M 1 via one or two groups selected from the group consisting of an acyloxy group, an acylaminooxy group, an alkylthio group and an arylthio group, or a 1,3-diketone, particularly preferably a ligand which coordinates to M 1 via an acyloxy group or an acylaminooxy group, or a 1,3-diketone.
  • X 1 contains an alkyl group, an alkenyl group, an alkynyl group, an alkylene group, etc., they may be a substituted or unsubstituted group that has a straight or branched structure.
  • X 1 contains an aryl group, a heterocyclic group, a cycloalkyl group, etc., they may be a substituted or unsubstituted group that may have a monocyclic or condensed ring structure.
  • X 1 is preferably a bidentate ligand, more preferably a bidentate ligand represented by any one of the following general formulae (VI-1) to (VI-5).
  • X 1 is furthermore preferably represented by any one of the general formulae (VI-1) to (VI-3) and (VI-5), particularly preferably represented by the general formulae (VI-1), (VI-2) or (VI-5), most preferably represented by the general formula (VI-5).
  • a 1 represents a bidentate linking group.
  • a 1 is preferably a bidentate linking group having 0 to 20 carbon atoms such as a methylene group, an ethylene group, a buthylene group, a 1-octylmethylene group, a 1,2-phenylene group, -NH-, etc., more preferably a linking group having 1 to 4 carbon atoms.
  • a 1 is particularly preferably a methylene group or an ethylene group.
  • e1 is 0 or 1, preferably 0.
  • the general formula (VI-1) represents an oxalylene group.
  • R 32 and R 33 independently represent an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a heterocyclic group, an alkoxy group, an alkoxycarbonyl group, an amino group, an acyl group or a hydrogen atom.
  • R 32 is preferably an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a heterocyclic group, an alkoxy group or an amino group, more preferably an alkyl group or an aryl group.
  • R 33 is preferably an alkyl group, an alkenyl group, an aryl group or a hydrogen atom, more preferably an alkyl group or a hydrogen atom.
  • B 1 and B 2 independently represent an oxygen atom or a sulfur atom. Both of B 1 and B 2 are preferably the same atom, more preferably a sulfur atom.
  • a 2 represents an alkylene group preferably having 1 to 20 carbon atoms such as a methylene group, an ethylene group, a propylene group, a 1-octylethylene group, etc. or an arylene group preferably having 6 to 20 carbon atoms such as a 1,2-phenylene group, a 4-octyloxy-1,2-phenylene group, etc., preferably an ethylene group, a propylene group or a 1,2-phenylene group optionally having substituents.
  • R 34 represents any one of an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a heterocyclic group, an alkoxy group and an aryloxy group with preferable examples being the same as those of R 19 to R 26 , or an alkylthio group preferably having 1 to 20 carbon atoms such as a methylthio group, an isopropylthio group, etc. or an arylthio group preferably having 6 to 20 carbon atoms such as a phenylthio group, a 4-methylphenylthio group, etc.
  • R 34 is preferably an alkyl group, an aryl group, an alkoxy group or aryloxy group, more preferably an alkoxy group or an aryloxy group, particularly preferably an alkoxy group.
  • R 35 and R 36 independently represent any one of an alkenyl group, a cycloalkyl group, an aryl group, an alkoxy group and an amino group with preferable examples being the same as those of R 19 to R 26 , or a hydrogen atom, an alkyl group preferably having 1 to 20 carbon atoms such as a methyl group, an ethyl group, a t-butyl group, a chloromethyl group, a trifluoromethyl group, a benzyl group, etc.
  • R 35 and R 36 preferably represent an aryl group, an alkyl group or a heterocyclic group, more preferably a phenyl group, a methyl group, a t-butyl group, a trifluoromethyl group or a 2-thienyl group, particularly preferably a methyl group, a t-butyl group or a trifluoromethyl group, respectively. It is most preferable that both R 34 and R 35 are a methyl group or a t-butyl group, or that R 34 is a trifluoromethyl group and R 35 is a methyl group.
  • R 37 represents any one of an alkyl group, an alkenyl group, an aryl group and a halogen atom with preferable examples being the same as those of R 19 to R 26 , or a hydrogen atom.
  • R 37 preferably represents an alkyl group, a halogen atom or a hydrogen atom, more preferably an alkyl group or a hydrogen atom, and particularly preferably a hydrogen atom.
  • CI 1 represents a counter ion optionally contained in the metal complex dye to neutralize charge thereof. Whether the metal complex dye is a cation or an anion and whether the dye has the net ionic charge or not depends on a metal atom, ligands and substituents therein. When a substituent has a dissociative group, it may dissociate the group to have charge. In this case, the charge of the whole complex is also neutralized by the CI 1 .
  • Typical positive counter ions are inorganic or organic ammonium ions such as a tetraalkyl ammonium ion, a pyridinium ion, etc., proton and alkali metal ions.
  • negative counter ions may be inorganic or organic, and examples thereof include a halide ion such as a fluoride ion, a chloride ion, a bromide ion, an iodide ion, etc., a substituted aryl sulfonate ion such as a p-toluene sulfonate ion, a p-chlorobenzene sulfonate ion, etc., an aryl disulfonate ion such as a 1,3-benzene disulfonate ion, a 1,5-naphthalene disulfonate ion, a 2,6-naphthalene disulfonate
  • ionic polymers or other dyes having an opposite charge to the dye may be also used as a charge-balancing counter ion.
  • metal complex such as bisbenzene-1,2-dithiolato nickel (III), etc. can be also used in the present invention.
  • the dye represented by the general formula (I) has preferably at least one, more preferably 2 or more interlocking group suitable for the surface of semiconductor particles.
  • Preferable interlocking groups are acidic groups having a dissociative proton such as a carboxyl group (-COOH), a sulfonic acid group (-SO 3 H), a hydroxyl group (-OH), a phsphonyl group (-P(O)(OH) 2 , etc.), a phosphoryl group (-OP(O)(OH) 2 , etc.), a hydroxamic acid group (-CONHOH, etc.), etc.
  • a dissociative proton such as a carboxyl group (-COOH), a sulfonic acid group (-SO 3 H), a hydroxyl group (-OH), a phsphonyl group (-P(O)(OH) 2 , etc.), a phosphoryl group (-OP(O)(OH) 2 , etc.), a
  • M 1 is Ru
  • LL 1 is a bidentate or tridentate ligand represented by any one of the general formulae (V-1) to (V-8)
  • X 1 is a bidentate ligand represented by any one of the general formulae (VI-1) to (VI-5)
  • m1 is 1 or 2
  • LL 1 's may be the same or different ligands when m1 is 2
  • m2 represents an integer of 1 to 3
  • X 1 's may be the same or different ligands that may be bonded together when m2 is 2 or 3
  • CI 1 represents a counter ion optionally contained to neutralize charge of the dye.
  • LL 1 and X 1 are bidentate ligand, m1 being 2 and m2 being 1.
  • the second metal complex dye for use in the second photoelectric conversion device of the present invention is represented by the following general formula (II). M 2 (LL 2 ) m3 (LL 3 ) m4 (X 2 ) m5 ⁇ Cl 2 Constitutional components of the dye will be described in detail below.
  • M 2 represents a metal atom, being the same as M 1 above mentioned. Preferable embodiments of M 2 are equal to those of M 1 .
  • LL 2 represents a bidentate or tridentate ligand, preferably a bidentate ligand represented by the above general formula (III), the same as LL 1 above mentioned.
  • Preferable embodiments of Za, Zb and Zc in the general formula (III) are equal to those in the case of LL 1 .
  • m3 indicating the number of LL 2 represents an integer of 0 to 2, preferably 0 or 1. When m3 is 2, LL 2 's may be the same or different ligands.
  • LL 2 represents a bidentate or tridentate ligand represented by any one of the above general formulae (V-1) to (V-8).
  • LL 2 is more preferably represented by the general formula (V-1), (V-2), (V-4) or (V-6), particularly preferably represented by the general formula (V-1) or (V-2).
  • R 11 to R 18 , R 19 to R 26 and R 27 to R 31 in the general formulae (V-1) to (V-8) are the same as those of LL 1 , respectively.
  • d1 to d8 preferably represent an integer of 0 to 2 independently
  • d7 and d8 preferably represent an integer of 0 to 3 independently
  • d9 to d16 preferably represent an integer of 0 to 3 independently. It is particularly preferable that R 20 's are bonded together on a pyridine ring to form a pyridine ring when d10 is 2 or more.
  • LL 3 represents a bidentate ligand represented by the following general formula (IV).
  • m4 indicating the number of LL 3 represents an integer of 1 to 3, preferably 1 or 2, more preferably 2.
  • LL 3 's may be the same or different ligands.
  • R 1 and R 2 independently represent a carboxyl group, a sulfonic acid group, a hydroxyl group, a hydroxamic acid group preferably having 1 to 20 carbon atoms such as -CONHOH, -CONCH 3 OH, etc., a phosphoryl group such as -OP(O)(OH) 2 , etc., or a phosphonyl group such as -P(O)(OH) 2 , etc.
  • R 1 and R 2 independently represent a carboxyl group, a sulfonic acid group, a hydroxyl group, a hydroxamic acid group preferably having 1 to 20 carbon atoms such as -CONHOH, -CONCH 3 OH, etc., a phosphoryl group such as -OP(O)(OH) 2 , etc., or a phosphonyl group such as -P(O)(OH) 2 , etc.
  • R 3 and R 4 independently represent a substituent.
  • Preferred examples thereof include an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, a heterocyclic group, an alkoxy group, an aryloxy group, an acyloxy group, an alkoxycarbonyl group, a carbamoyl group, an acylamino group, an amino group, an acyl group, a sulfonamido group and a halogen atom with preferable examples being the same as those of R 19 to R 26 , and a cyano group, a hydroxyl group and an alkynyl group preferably having 2 to 20 of carbon atoms such as an ethynyl group, a butadiynyl group, a phenylethynyl group, etc.
  • R 3 and R 4 is more preferably an alkyl group, an alkenyl group, a cycloalkyl group, an alkoxy group, an aryloxy group, an acylamino group, an amino group, a hydroxyl group or an alkynyl group, particularly preferably an alkyl group, an alkenyl group, an alkoxy group, an acylamino group or an amino group, most preferably an alkyl group, an alkoxy group or an amino group, independently.
  • LL 3 When LL 3 contains an alkyl group, an alkenyl group, etc., they may be a substituted or unsubstituted group having a straight or branched structure. When LL 3 contains an aryl group, a heterocyclic group, etc., they may be a substituted or unsubstituted group that may have a monocyclic or condensed ring structure.
  • b1 and b2 independently represent an integer of 0 to 4.
  • R 1 's may be the same or different groups when b1 is 2 or more, and R 2 's may be the same or different groups when b2 is 2 or more.
  • R 1 may be bonded to any carbon atom in the pyridine ring, and R 2 may be bonded to any carbon atom in the quinoline ring.
  • b1 is preferably an integer of 0 to 2, more preferably 0 or 1.
  • b2 is preferably 1 or 2.
  • the sum of b1 and b2 is preferably 1 to 4, more preferably 1 or 2.
  • c1 represents an integer of 0 to 3
  • c2 represents an integer of 0 to 5.
  • R 3 's may be the same or different groups that may be bonded together to form a ring when c1 is 2 or more.
  • R 4 's may be the same or different groups that may be bonded together to form a ring when c2 is 2 or more.
  • R 3 and R 4 may be bonded together to form a ring when both of c1 and c2 are 1 or more.
  • This ring formed by R 3 and R 4 is preferably a benzene ring, a cyclohexane ring or cyclopentane ring.
  • R 3 may be bonded to any carbon atom in the pyridine ring, and R 4 may be bonded to any carbon atom in the quinoline ring.
  • c1 preferably represents an integer of 0 to 2, more preferably represents 0 or 1.
  • c2 preferably represents an integer of 1 to 4, more preferably represents 1 or 2.
  • the sum of c1 and c2 is preferably 1 to 6, more preferably 1 to 3.
  • X 2 represents a monodentate or bidentate ligand which coordinates to M 2 via one or two groups selected from the group consisting of an acyloxy group, an acylthio group, an acylaminooxy group, a thioacyloxy group, a thioacylthio group, a thiocarbonate group, a dithiocarbonate group, a trithiocarbonate group, an alkylthio group, an arylthio group, an alkoxy group and an aryloxy group with preferable examples being the same as those of X 1 , and a thiocarbamate group preferably having 1 to 20 carbon atoms such as an N,N-diethylthiocarbamate group, etc., a dithiocarbamate group preferably having 1 to 20 carbon atoms such as an N-phenyldithiocarbamate group, an N,N-dimethyldithiocarbamate group, an N,N
  • m5 indicating the number of X 2 represents an integer of 0 to 3.
  • X 2 's may be the same or different ligands that may be bonded together when m5 is 2 or 3.
  • m5 is preferably 0 to 2, more preferably 1 or 2. It is particularly preferable that m5 is 2 when X 2 is a monodentate ligand, and that m5 is 1 when X 2 is a bidentate ligand.
  • M 2 is a metal atom tend to form four-coordinated complex such as Cu, Pd, Pt, etc.
  • m3 is 0 and m4 is 1 or 2.
  • m5 is preferably 1 or 2 when m4 is 1, and m5 is preferably 0 when m4 is 2.
  • m4 is preferably 1 or 2, more preferably 2.
  • m3 is preferably 1 or 2, more preferably 1 when m4 is 1, m5 is preferably 1 or 2 when m3 is 1, and m5 is preferably 0 when m3 is 2.
  • m3 is preferably 0 or 1, more preferably 0 when m4 is 2, m5 is preferably 1 or 2 when m3 is 0, and m5 is preferably 0 when m3 is 1.
  • both of m3 and m5 are preferably 0.
  • Preferred bidentate ligand X 2 is a ligand which coordinates to M 2 via one or two groups selected from the group consisting of an acyloxy group, an acylthio group, an acylaminooxy group, a thioacyloxy group, a thioacylthio group, a thiocarbonate group, a dithiocarbonate group, a trithiocarbonate group, an alkylthio group, an arylthio group, an alkoxy group, an aryloxy group, a thiocarbamate group, a dithiocarbamate group and an acyl group, or a ligand selected from the group consisting of 1,3-diketones, carbonamides, thiocarbonamides and thioureas.
  • Preferred monodentate ligand X 2 is a ligand which coordinates to M 2 via one or two groups selected from the group consisting of an alkylthio group, an arylthio group, a thiocyanate group, an isothiocyanate group, a cyanate group, an isocyanate group and a cyano group, or a ligand selected from a member consisting of 1,3-diketones, carbonamides, thiocarbonamides, thioureas, halogen atoms and carbonyl.
  • X 2 is more preferably a ligand which coordinates to M 2 via one or two groups selected from the group consisting of an acyloxy group, an acylaminooxy group, a thioacylthio group, a dithiocarbonate group, a trithiocarbonate group, an alkylthio group, an arylthio group, an alkoxy group, an aryloxy group, a dithiocarbamate group, a thiocyanate group, an isothiocyanate group, a cyanate group, an isocyanate group and a cyano group, or a ligand selected from the group consisting of 1,3-diketones, thioureas, halogen atoms and carbonyl, furthermore preferably a ligand which coordinates to M 2 via one or two groups selected from the group consisting of an acyloxy group, an acylaminooxy group, an arylthio group, a dithiocarbamate group,
  • X 2 contains an alkyl group, an alkenyl group, an alkynyl group, an alkylene group, etc., they may be a substituted or unsubstituted group having a straight or branched structure.
  • X 2 contains an aryl group, a heterocyclic group, a cycloalkyl group, etc., they may be a substituted or unsubstituted group having a monocyclic or condensed ring structure.
  • CI 2 represents a counter ion optionally contained in the metal complex dye to neutralize charge thereof, being the same as CI 1 above mentioned. Examples and preferable embodiments of CI 2 are equal to those of CI 1 .
  • the dye represented by the general formula (II) has preferably at least one interlocking group suitable for the surface of semiconductor particles, being the same as the dye represented by the general formula (I) mentioned above.
  • the number of the interlocking group in the dye represented by the general formula (II) is more preferably one to six, particularly preferably one to four.
  • LL 3 has at least one interlocking group, and it is more preferable that LL 2 and LL 3 have at least one interlocking group, respectively.
  • M 2 is Ru
  • LL 2 is a bidentate or tridentate ligand represented by any one of the general formulae (V-1) to (V-8)
  • LL 3 is a bidentate ligand represented by the general formula (IV)
  • X 2 represents a monodentate or bidentate ligand which coordinates to M 2 via one or two groups selected from the group consisting of an acyloxy group, an acylthio group, an acylaminooxy group, a thioacyloxy group, a thioacylthio group, a thiocarbonate group, a dithiocarbonate group, a trithiocarbonate group, an alkylthio group, an arylthio group, an alkoxy group, an aryloxy group, a thiocarbamate group, a dithiocarbamate group, an acyl group, a thiocyanate
  • Synthesis of the metal complex dye represented by the general formula (II) according to the present invention can be carried out based on methods described in literatures such as Chem. Phys. Lett., 85, 309 (1982), Chem. Phys. Lett., 71, 220 (1980), J. Am. Chem. Soc., 115, 6382 (1993) and references therein, etc.
  • Ligands composing the dye can be synthesized referring to Synth. Commun., 27, 2165 (1997), Aust. J. Chem., 25, 1631 (1972), etc.
  • the photoelectric conversion device of the present invention comprises a photosensitive layer containing semiconductor particles sensitized by the above-described metal complex dye.
  • the photoelectric conversion device preferably comprises an electrically conductive layer 10, a photosensitive layer 20, a charge transfer layer 30 and a counter electrically conductive layer 40 each laminated in this order as shown in Fig. 1.
  • the photosensitive layer 20 comprises the semiconductor particles 21 sensitized by a metal complex dye 22 and charge-transporting materials 23 penetrated into voids among the semiconductor particles.
  • the charge-transporting material 23 is composed of the same components as materials for use in the charge transfer layer 30.
  • a substrate 50 may be set on the electrically conductive layer 10 or the counter electrically conductive layer 40.
  • a layer composed of the electrically conductive layer 10 and the substrate 50 optionally set thereon is referred to as "conductive support”, and a layer composed of the counter electrically conductive layer 40 and the substrate 50 optionally set thereon is referred to as "counter electrode”.
  • An article comprising such a photoelectric conversion device connected to an outer circuit is a photo-electrochemical cell.
  • the electrically conductive layer 10, the counter electrically conductive layer 40, and the substrate 50 shown in Fig. 1 may be a transparent electrically conductive layer 10a, a transparent counter electrically conductive layer 40a, and a transparent substrate 50a, respectively.
  • the photoelectric conversion device of the present invention shown in Fig. 1 In the photoelectric conversion device of the present invention shown in Fig. 1, light injected to the photosensitive layer 20 excites the metal complex dye 22, etc., electrons with high energy therein are transferred to a conduction band of the semiconductor particles 21, and they are diffused to reach to the electrically conductive layer 10. At this time, the dye 22, etc. are in the form of the oxidation product. In the photo-electrochemical cell, the electrons in the electrically conductive layer 10 are returned to the oxidation product of the dye 22 etc. through the counter electrically conductive layer 40 and the charge transfer layer 30 while working in the outer circuit, so that the dye 22 is regenerated.
  • the photosensitive layer 20 acts as an anode.
  • each layer such as a boundary between the electrically conductive layer 10 and the photosensitive layer 20, a boundary between the photosensitive layer 20 and the charge transfer layer 30, a boundary between the charge transfer layer 30 and the counter electrically conductive layer 40, etc., components of each layer may be diffused and mixed each other.
  • a boundary between the electrically conductive layer 10 and the photosensitive layer 20 and the photosensitive layer 20 and the charge transfer layer 30, a boundary between the charge transfer layer 30 and the counter electrically conductive layer 40, etc. components of each layer may be diffused and mixed each other.
  • the conductive support is composed of: (1) a single layer of the electrically conductive layer; or (2) two layers of the electrically conductive layer and the substrate.
  • the substrate is not necessary in the case where the electrically conductive layer has sufficient strength and can fully seal the photoelectric conversion device.
  • the electrically conductive layer is made of a material having a sufficient strength and an electrical conductivity such as a metal, etc.
  • the conductive support may be used the substrate having thereon the electrically conductive layer comprising an electrically conductive agent at the photosensitive layer side.
  • the electrically conductive agent include metals such as platinum, gold, silver, copper, aluminum, rhodium, indium, etc., carbon and electrically conductive metal oxides such as indium-tin composite oxides, tin oxides doped with fluorine, etc.
  • the thickness of the electrically conductive layer is preferably 0.02 to 10 ⁇ m.
  • the surface resistance of the conductive support is as low as possible.
  • the surface resistance is preferably 100 ⁇ /square or less, more preferably 40 ⁇ /square or less.
  • the lowest limit of the surface resistance is not limited in particular, generally approximately 0.1 ⁇ /square.
  • the conductive support is substantially transparent.
  • the "substantially transparent" conductive support has a light transmittance of 10 % or more in the present invention.
  • the light transmittance is preferably 50 % or more, particularly preferably 70 % or more.
  • the transparent conductive support preferably composed of the transparent substrate such as a glass substrate, a plastic substrate, etc. and a transparent electrically conductive layer comprising an electrically conductive metal oxide formed by coating or vapor depositing on the surface thereof.
  • a transparent electrically conductive glass in which an electrically conductive layer comprising a tin oxide doped with fluorine is deposited on a transparent substrate made of a low-cost soda-lime float glass is preferred.
  • a transparent polymer film having an electrically conductive layer thereon is preferably used as the transparent conductive support.
  • the transparent polymer examples include tetraacetylcellulose (TAC), polyethyleneterephthalate (PET), polyethylenenaphthalate (PEN), syndiotactic polystyrene (SPS), polyphenylenesulfide (PPS), polycarbonate (PC), polyarylate (PAr), polysulfone (PSF), polyestersulfone (PES), polyetherimide (PEI), cyclic polyolefin, brominated phenoxy, etc.
  • TAC tetraacetylcellulose
  • PET polyethyleneterephthalate
  • PEN polyethylenenaphthalate
  • SPS syndiotactic polystyrene
  • PPS polyphenylenesulfide
  • PC polycarbonate
  • PAr polyarylate
  • PSF polysulfone
  • PET polyestersulfone
  • PEI polyetherimide
  • cyclic polyolefin brominated phenoxy, etc.
  • a metal lead to reduce a resistance of the transparent conductive support.
  • Material of the metal lead is preferably a metal such as aluminum, copper, silver, gold, platinum, nickel, etc., particularly preferably aluminum or silver. It is preferable that the metal lead is applied onto the transparent substrate by vapor deposition, sputtering, or the like, and the transparent electrically conductive layer composed of a tin oxide doped with fluorine or ITO film is applied thereon. It is also preferable that the transparent electrically conductive layer is formed on the transparent substrate, and then the metal lead is applied onto the transparent electrically conductive layer.
  • the reduction in quantity of incident light owing to the metal lead is preferably 10 % or less, more preferably 1 to 5 %.
  • the semiconductor particles act as a so-called photosensitive substance.
  • the semiconductor particles absorb a light to conduct a charge separation, thereby generating electrons and positive holes.
  • light-absorption and the generation of electrons and positive holes are primarily caused in the dye, and the semiconductor particles receive and then convey the electrons.
  • semiconductor particles simple substances such as silicone and germanium, III-V series compound semiconductors, metal chalcogenides such as oxides, sulfides and selenides, compounds with perovskite structure such as strontium titanate, calcium titanate, sodium titanate, barium titanate and potassium niobate, etc. may be used.
  • the metal chalcogenide include oxides of titanium, tin, zinc, iron, tungsten, zirconium, hafnium, strontium, indium, cerium, yttrium, lanthanum, vanadium, niobium or tantalum; sulfides of cadmium, zinc, lead, silver, antimony or bismuth; selenides of cadmium or lead; and cadmium telluride.
  • Examples of other semiconductor compounds include phosphides of zinc, gallium, indium and cadmium; selenides of gallium-arsenic or copper-indium; and copper-indium sulfide, etc.
  • the semiconductor used in the present invention include Si, TiO 2 , SnO 2 , Fe 2 O 3 , WO 3 , ZnO, Nb 2 O 5 , CdS, ZnS, PdS, Bi 2 S 3 , CdSe, CdTe, GaP, InP, GaAs, CuInS 2 , CuInSe 2 , etc.
  • the semiconductor for use in the present invention may be a single crystal or a poly crystal.
  • the single crystal semiconductor is preferred from a viewpoint of a conversion efficiency, while the poly crystal semiconductor is preferred from a viewpoints of a production cost, security of raw materials, a period of energy-payback time, etc.
  • the particle size of the semiconductor particles is generally in the nm to ⁇ m level.
  • the mean size of primary particles which is obtained from a diameter of a circle equivalent to a projected area, is preferably 5 to 200 nm, more preferably 8 to 100 nm.
  • the mean size of the secondary semiconductor particles in a dispersion is preferably 0.01 to 100 ⁇ m.
  • Two or more kinds of particles having a different particle size distribution from each other, may be mixed to use in the photosensitive layer.
  • the average particle size of the smaller particles is preferably 5 nm or less.
  • semiconductor particles each having a large particle size, e.g. approximately 300 nm, may be added to the mixture used for composing the semiconductor layer.
  • Preferred as a method for producing the semiconductor particles are sol-gel methods described in Sumio Sakka, Science of a sol-gel method, Agune Shofusha (1998), Technical information Association, Thin film-coating technology by a sol-gel method (1995), etc. and gel-sol methods described in Tadao Sugimoto, Synthesis of mono-dispersion particles and control of their size and form by a novel gel-sol method, and MATERIA, Vol. 35, No. 9, pp. 1012 to 1018 (1996). Further, the method developed by Degussa Company, which comprises preparing oxides by subjecting chlorides to a high temperature hydrolysis in an oxyhydrogen salt is also preferred.
  • any of the above-described sol-gel method, gel-sol method and high temperature hydrolysis method may be preferably used, and further a sulfuric acid method and a chlorine method described in Manabu Seino, Titanium oxide - properties and applied technique, Gihodo Shuppan, (1997) may be used.
  • a sol-gel method are a method described in Christophe J. Barb'e, et al, Journal of American Ceramic Society, Vol. 80, No. 12, pp. 3157 to 3171 (1997) and a method described in Burnside, et al, Chemistry of Materials, Vol. 10, No. 9, pp. 2419 to 2425.
  • the semiconductor particles may be coated on the conductive support by a method where a dispersion liquid or a colloid solution containing the particles is coated on the electrically conductive layer, the above-mentioned sol-gel method, etc.
  • a wet-type film production method is relatively advantageous for the mass production of the photoelectric conversion device, improvement of properties of semiconductor particles and adaptability of the conductive support, etc.
  • a coating method and a printing method are typical examples.
  • the sol-gel method mentioned above may be used as a method for preparing a dispersion solution containing the semiconductor particles. Further, the dispersion solution may be prepared by crushing the semiconductor in a mortar, dispersing the semiconductor while grinding in a mill, or precipitating the semiconductor particles in a solvent when the semiconductor is synthesized.
  • dispersion solvent water or various kinds of organic solvents such as methanol, ethanol, isopropyl alcohol, dichloromethane, acetone, acetonitrile, ethyl acetate, etc. may be used.
  • a polymer, a surfactant, an acid or a chelating agent may be used as a dispersing agent, if necessary.
  • Preferred coating methods are a roller method and a dip method as an application series, an air-knife method and a blade method as a metering series, etc. Further, preferable as a method where an application and metering can be performed at the same time are a wire-bar method disclosed in JP-B-58-4589, a slide-hopper method described in United States Patent Nos. 2,681,294, 2,761,419, 2,761,791, etc., an extrusion method, a curtain method, etc. Further, as for a wide use, a spin method and a spray method are preferred.
  • a wet-type printing method three major printing methods comprising a relief printing, an offset printing and a gravure printing, and an intagilo printing, a gum-printing, a screen printing, etc. are preferred.
  • a preferable film-production method is selected from the above-mentioned methods in accordance with viscosity of the solution and a wet thickness.
  • the viscosity of the dispersion solution material ly depends on the kind and dispersion property of the semiconductor particles, the kind of a solvent and additives such as a surfactant and a binder.
  • a high viscosity solution e.g. 0.01 to 500 Poise
  • an extrusion method, a cast method, a screen-printing method, etc. are preferably used.
  • a low viscosity solution e.g. 0.1 Poise or less
  • a slide-hopper method, a wire-bar method and a spin method are preferably used to form a uniform film.
  • an extrusion method may be used if the solution is coated to some extent.
  • a wet-type film-production method may be properly selected in accordance with the viscosity of a coating solution, a coating amount, a support, a coating speed and so on.
  • the layer of the semiconductor particles is not limited to a single layer.
  • the dispersion solutions of semiconductor particles, each of which dispersion has a different particle size may be subjected to a multi-layer coating.
  • alternatively coating solutions each containing different kinds of semiconductor particles (or different kinds of binder, or additives) may be subjected to a multi-layer coating.
  • An extrusion method or a slide-hopper method is suitable for the multi-layer coating.
  • multi-layers may be coated at the same time, or alternatively they may be coated one over the other from several times to ten-several times. In the latter case, a screen method is also preferably used.
  • the thickness of the semiconductor particle layer same as the thickness of a photosensitive layer, becomes thicker, the amount of a dye incorporated therein per unit of the projected area increases, thereby making the light capturing rate higher.
  • a preferable thickness of the semiconductor particle layer is 0.1 to 100 ⁇ m.
  • the thickness of the semiconductor particle layer is preferably 1 to 30 ⁇ m, more preferably 2 to 25 ⁇ m.
  • a coating amount of the semiconductor particles per 1 m 2 of the support is preferably 0.5 to 400 g, more preferably 5 to 100 g.
  • the particles are preferably subjected to a heat treatment to electronically contact them with each other, and to increase a coating strength and an adherence thereof with the support.
  • a heating temperature at the heat treatment is preferably 40 °C or more but less than 700 °C, more preferably 100 to 600 °C.
  • a heating time is approximately 10 minutes to 10 hours. It is not preferred that a support having a low melting point or softening point such as a polymer film is subjected to a high temperature treatment because such a support tends to be deteriorated thereby.
  • the heat treatment is preferably carried out at a temperature as low as possible from a viewpoint of the cost. The practice at such a low temperature can be realized by a combination use with the above-described small semiconductor particles having a size of 5 nm or less, a heat treatment in the presence of a mineral acid, etc.
  • a chemical metal-plating using an titanium tetrachloride aqueous solution, etc. or an electrochemical metal-plating using an titanium trichloride aqueous solution may be carried out to increase a surface area of the semiconductor particles, or to enhance a purity in the vicinity of the semiconductor particles, thereby improving an efficiency of electron injection into the semiconductor particles from a dye.
  • the semiconductor particles have a large surface area, so that they can adsorb lots of dyes. Therefore, the surface area in the state that the semiconductor particle layer have been coated on the support is preferably 10 times or more, more preferably 100 times or more of the projected area. The highest limit, even though it is not limited in particular, is generally a level of 1000 times.
  • the metal complex dye may be adsorbed onto the semiconductor particles by soaking the conductive support having thereon the well-dried semiconductor particle layer in a solution of the metal complex dye, or by coating a solution of the metal complex dye onto the semiconductor particle layer.
  • a soaking method, a dipping method a roller method, an air-knife method, etc. may be used.
  • the dye may be adsorbed at a room temperature or while refluxing as described in JP-A-7-249790.
  • a coating method of the latter a wire-bar method, a slide-hopper method, an extrusion method, a curtain method, a spin method, a spray method, etc. may be used.
  • a relief printing, an offset printing, a gravure printing, a screen-printing, etc. may be used as a printing method.
  • a solvent therefor may be properly selected in accordance with the solubility of the metal complex dye.
  • the solvent include alcohols such as methanol, ethanol, t-butanol, benzyl alcohol, etc., nitriles such as acetonitrile, propionitrile, 3-methoxypropionitrile, etc., nitromethane, halogenated hydrocarbons such as dichloromethane, dichloroethane, chloroform, chlorobenzene, etc., ethers such as diethylether, tetrahydrofuran, etc., dimethylsulfoxide, amides such as N,N-dimethylformamide, N,N-dimethylacetamide, etc., N-methylpyrrolidone, 1,3-dimethylimidazolidinone, 3-methyloxazolidinone, esters
  • various kinds of coating methods can be also selected in accordance with the viscosity of the metal complex dye solution.
  • a high viscosity solution e.g. 0.01 to 500 Poise
  • an extrusion method e.g. 0.01 to 500 Poise
  • various kinds of printing methods are suitable.
  • a low viscosity solution e.g. 0.1 Poise or less
  • a slide-hopper method e.g. a wire bar method and a spin method are suitable.
  • a uniform film can be made by any of them.
  • adsorption method of the dye may be properly selected in accordance with the viscosity of the coating solution of the metal complex dye, the coating amount, the conductive support, the coating speed, etc. It is preferable that the time which is required to adsorb the dye after coating is as short as possible from a viewpoint of mass production.
  • the unadsorbed metal complex dye causes disturbance of efficiency of the device, it is preferable that they are removed by washing immediately after adsorption.
  • the washing is preferably carried out using a wet-type washing bath with a polar solvent such as acetonitrile, or an organic solvent such as an alcohol-based solvent.
  • a polar solvent such as acetonitrile
  • an organic solvent such as an alcohol-based solvent.
  • a heat treatment before adsorption. After the heat treatment, it is preferable that the dye is quickly adsorbed at 40 to 800 °C without cooling to a room temperature in order to prevent adsorption of water onto the surface of the semiconductor particles
  • the total amount of the metal complex dye to be used is preferably 0.01 to 100 mmol per the unit surface area (1 m 2 ) of the conductive support. Further, the amount of the dye to be adsorbed onto semiconductor particles is preferably 0.01 to 1 mmol per g of the semiconductor particles. Such an adsorption amount of the metal complex dye effects a sufficient sensitization to the semiconductors. In contrast, if the amount of the dye is too small, the sensitization effect is not enough. On the other hand, if excessive, the dye unadsorbed onto the semiconductor particles floats, thereby reducing sensitization effect.
  • two or more kinds of dyes may be mixed and used therein to extend the wave range of the photoelectric conversion and to increase a conversion efficiency.
  • the dyes and their proportion is preferably selected in accordance with the wavelength region and the intensity distribution of a light source.
  • two or more kinds of the metal complex dyes of the present invention may be used in combination, or the dye of the present invention and a prior art metal complex dye and/or a polymethine dye may be used in combination.
  • a colorless compound may be co-adsorbed on the semiconductor particles together with the metal complex dye to weaken an interaction between the metal complex dyes, such as association.
  • the hydrophobic compounds for the co-adsorption include steroid compounds having a carboxyl group such as chenodeoxycholic acid, etc.
  • an UV-absorbing agent may be used together therewith.
  • the surface of the semiconductor particles may be treated with amines after adsorbing the metal complex dye to accelerate to remove an excessive metal complex dye.
  • the amines include pyridine, 4-t-butylpyridine, polyvinylpyridine, etc.
  • the amine may be used as it is when it is liquid, and used as a solution with an organic solvent.
  • the charge transfer layer replenishes electrons to the oxidized metal complex dye.
  • Typical examples of materials for use in the charge transfer layer include a an electrolysis solution having a redox coupler dissolved in an organic solvent, a so-called gel electrolyte where a liquid composed of an organic solvent and a redox coupler dissolved therein is penetrated into a polymer matrix, a fused salt containing redox couple, etc. Further, a solid electrolyte and a hole-transporting material may be used for the charge transfer layer.
  • the electrolysis solution used in the present invention preferably comprises an electrolyte, a solvent and additives.
  • the electrolyte may be: (a) a combination of I 2 and iodides (e.g. metal iodides such as LiI, NaI, CsI, CaI 2 , quaternary ammonium iodides such as tetraalkyl ammonium iodide, pyridinium iodide, imidazolium iodide, etc.); (b) a combination of Br 2 and bromides (e.g.
  • I 2 and iodides e.g. metal iodides such as LiI, NaI, CsI, CaI 2 , quaternary ammonium iodides such as tetraalkyl ammonium iodide, pyridinium iodide, imidazolium iodide, etc.
  • Br 2 and bromides e.
  • metal bromides such as LiBr, NaBr, KBr, CsBr, CaBr 2 , quaternary ammonium bromides such as tetraalkyl ammonium bromide, pyridinium bromide, etc.); (c) metal complexes comprising a ferrocyanide-ferricyanide, a ferrocene-ferricinium ion, etc.; (d) sulfur compounds such as sodium polysulfide, alkylthiol-alkyldisulfide, etc.; and (e) viologen dye, hydroquinone-quinone, etc.
  • I 2 and iodide such as LiI and quaternary ammonium iodide is preferably used.
  • the above-described electrolytes may be used as a mixture thereof.
  • fused salts described in EP 718288, WO 95/18456, J. Electrochem. Soc., Vol. 143, No. 10, 3099 (1996), Inorg. Chem., 35, 1168 to 1178 (1996), etc. may be used as an electrolyte. When the fused salts are used as an electrolyte, no solvent is necessary to use, generally.
  • the density of electrolyte in the electrolysis solution is preferably 0.1 to 15 M, more preferably 0.2 to 10 M.
  • the iodine density therein is preferably 0.01 to 0.5 M.
  • a solvent for the electrolyte is a compound which exhibits an excellent ionic conductibility. Such a compound exhibits a low viscosity and a high ionic mobility, and/or exhibits a high permittivity and a high actual carrier concentration.
  • the following compounds are given as examples of the above-mentioned solvents.
  • Ethylene carbonate, propylene carbonate, vinylene carbonate, butylene carbonate, dimethyl carbonate, diethyl carbonate, methylethyl carbonate, and dipropyl carbonate are preferred examples.
  • ⁇ -butyrolactone, ⁇ -valerolactone, ⁇ -capryrolactone, crotolactone, ⁇ -caprolactone, and ⁇ -valerolactane are preferred examples.
  • Ethyl ether, 1,2-dimethoxyethane, diethoxyethane, trimethoxymethane, ethyleneglycol dimethylether, polyethyleneglycol dimethylether, 1,3-dioxolan, and 1,4-dioxan are preferred examples.
  • Methanol, ethanol, ethyleneglycol monomethylether, propyleneglycol monoethylether, polyethyleneglycol monoalkylether, and polypropyleneglycol monoalkylether are preferred examples.
  • Ethyleneglycol, propyleneglycol, polyethyleneglycol, polypropylene glycol, and glycerin are preferred examples.
  • Ethyleneglycol dialkylether, propyleneglycol dialkylether, polyethyleneglycol dialkylether, and polypropyleneglycol dialkylether are preferred examples.
  • Tetrahydrofuran, and 2-methyltetrahydrofuran are preferred examples.
  • Acetonitrile, glutarodinitrile, propionitrile, methoxyacetonitrile, and benzonitrile are preferred examples.
  • Methyl formate, methyl acetate, ethyl acetate, and methyl propionate are preferred examples.
  • Trimethyl phosphate and triethyl phosphate are preferred examples.
  • N-methyl pyrrolidone 4-methyl-1,3-dioxane, 2-methyl-1,3-dioxolan, 3-methyl-2-oxazolidinone, 1,3-propansultone, and sulfolane are preferred examples.
  • Aprotic organic solvents such as dimethylsulfoxide, formamide, N,N-dimethylformamide, nitromethane, etc. and water are preferred examples.
  • solvents Of these compounds, carbonates, nitriles, and heterocyclic compounds are preferred as solvents.
  • Mixed solvent composed of two or more kinds of the solvents may be used if necessary.
  • a basic compound such as t-butylpyridine, 2-pycoline, 2,6-lutidine, etc. as described in J. Am. Ceram. Soc., 80 (12), 3157 to 3171 (1997) may be added.
  • the concentration of the basic compound is preferably 0.05 to 2 M.
  • An electrolyte may be gelled (solidified). Gelation may be carried out by: adding a polymer or an oil-gelling agent; polymerization of multifunctional monomers added to the electrolysis solution; or a cross-linking reaction with a polymer.
  • a polymer or an oil-gelling agent When the electrolyte is gelled by adding the polymer, compounds described in Polymer Electrolyte Reviews-1,2, (edited by J. R. MacCaLLum and C. A. Vincent, ELSEIVER APPLIED SCIENCE) may be used, and polyacrylonitrile or poly(vinylidene fluoride) is particularly preferably used.
  • the electrolyte is gelled by adding the oil-gelling agent, compounds described in J. Chem. Soc. Japan, Ind. Chem.
  • the electrolysis solution comprising the multifunctional monomers, a polymerization initiator, the electrolyte and a solvent is prepared, and coated on the dye-sensitized semiconductor particle layer (photosensitive layer 20) according to a method such as a casting method, a coating method, a soaking method and an impregnation method.
  • the electrolysis solution is preferably gelled by filling voids among the semiconductor particles 21 with the solution in a sol state to form a sol electrolyte layer on the photosensitive layer 20 as shown in Fig. 1, followed by a radical polymerization.
  • the multifunctional monomer has two or more ethylenycally unsaturated groups.
  • ethylenycally unsaturated groups Preferable examples thereof include divinyl benzene, ethyleneglycol diacrylate, ethyleneglycol dimethacrylate, diethyleneglycol diacrylate, diethyleneglycol dimethacrylate, triethyleneglycol diacrylate, triethyleneglycol dimethacrylate, pentaerythritol triacrylate and trimethylolpropane triacrylate.
  • the gel electrolyte may contain unifunctional monomers together with the above-described multifunctional monomers.
  • the unifunctional monomers include esters or amides derived from an acrylic acid or an ⁇ -alkylacrylic acid such as methacrylic acid (e.g. N-isopropyl acrylamide, acrylamide, 2-acrylamido-2-methylpropane sulfonic acid, acrylamidopropyl trimethylammonium chloride, methyl acrylate, hydroxyethyl acrylate, N-propylacrylate, N-butylacrylate, 2-methoxyethylacrylate, cyclohexylacrylate, etc.), vinyl esters (e.g.
  • vinyl acetate, etc. maleate or fumarate (e.g. dimethyl maleate, dibutyl maleate, diethyl fumarate, etc.), organic acid salts (e.g. sodium salts of maleic acid, fumaric acid or p-styrene sulfonic acid, etc.), nitriles (e.g. acrylonitrile, methacryronitrile, etc.), dienes (e.g. butadiene, cyclopentadiene, isoprene, etc.), aromatic vinyl compounds (e.g.
  • maleate or fumarate e.g. dimethyl maleate, dibutyl maleate, diethyl fumarate, etc.
  • organic acid salts e.g. sodium salts of maleic acid, fumaric acid or p-styrene sulfonic acid, etc.
  • nitriles e.g. acrylonitrile, methacryronitrile, etc.
  • the weight ratio of the multifunctional monomer to the total of the monomers is preferably 0.5 to 70 weight %, more preferably 1.0 to 50 weight %.
  • the above-described monomers for a gelation can be polymerized by a general radical polymerization method described in Takayuki Otsu and Masaetsu Kinoshita, Kobunshi Gosei no Jikkenho (Kagaku Dojin), Takayuki Otsu, Koza Jugo Hannoron 1 Rajikaru Jugo (I) (Kagaku Dojin), etc.
  • Radical polymerization of the monomers for a gelation can be carried out by heating, light, an ultraviolet ray or electron ray, or by an electro-chemical method. Radical polymerization by heating is particularly preferred.
  • the polymerization initiator include azo initiators such as 2,2'-azobis(isobutyronitrile), 2,2'-azobis(dimethylvaleronitrile) and dimethyl 2,2'-azobis(2-methylpropionate), and peroxide initiators such as benzoyl peroxide, etc.
  • the weight ratio of the initiator is preferably 0.01 to 20 weight %, more preferably 0.1 to 10 weight %, based on the total amount of monomers.
  • the weight ratio of the monomers accounting for the gel electrolyte is preferably in the range of 0.5 to 70 weight %, more preferably 1.0 to 50 weight %.
  • the gelation of the electrolyte is accomplished by a cross-linking reaction of polymers
  • a polymer having a group with a cross-linking reactivity in combination with a cross-linking agent.
  • the group with a cross-linking reactivity include nitrogen-containing groups having heterocyclic structure such as a pyridine ring, an imidazole ring, a thiazole ring, an oxazole ring, a triazole ring, a morpholine ring, a piperidine ring, a piperazine ring, etc.
  • cross-linking agent examples include bi- or multi-functional electrophilic agents to be reacted with the nitrogen such as alkyl halide, aralkyl halide, sulfonate, acid anhydride, isocyanate, etc.).
  • Organic hole-transporting materials and/or inorganic hole-transporting materials may be used in place of the electrolyte.
  • Preferable examples of the organic hole-transporting material include the following compounds.
  • aromatic diamine compounds composed of linked tertiary aromatic amine units of 1,1'-bis ⁇ 4-(di-p-tolylamino)phenyl ⁇ cyclohexane described in JP-A-59-194393, aromatic amines having 2 or more of tertiary amino groups in which 2 or more of condensed aromatic rings are bonded to nitrogen atom(s), such as 4,4'-bis[(N-1-naphthyl-N-phenylamino)] biphenyl described in JP-A-5-234681, aromatic triamines derived from triphenyl benzene, having a starburst structure described in United States Patent No.
  • aromatic diamines such as N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine described in United States Patent No.
  • Polypyrrole (K. Murakoshi et al., Chem. Lett., 1997, p. 471), polyacetylene and derivatives thereof, poly(p-phenylene) and derivatives thereof, poly(p-phenylenevinylene) and derivatives thereof, polythienylenevinylene and derivatives thereof, polythiophene and derivatives thereof, polyaniline and derivatives thereof, and polytoluidine and derivatives thereof described in Handbook of Organic Conductive Molecules and Polymers, Vol. 1 to 4 (edited by NALWA, published by WILEY), etc.
  • a compound containing cation radical such as tris(4-bromophenyl)aminium hexachloroantimonate to control a dopant level
  • a salt such as Li[(CF 3 SO 2 ) 2 N] to carry out a potential-control of surface of the oxide semiconductor thereby compensating a space-charge layer.
  • the organic hole-transporting materials may be introduced into the electrodes by a vacuum deposition method, a casting method, a coating method, a spin-coating method, a soaking method, an electrolytic polymerization method, a photo electrolytic polymerization method, etc.
  • a titanium dioxide thin layer is coat as an undercoating layer to be shortproof by a spray pyrolysis described in Electrochim. Acta., 40, 643 to 652 (1995), etc.
  • two methods as described below may be used.
  • One is a method comprising the steps of laminating a counter electrode on the semiconductor particle layer through a spacer, and dipping open-ends of both layers into the electrolysis solution to spread the electrolysis solution into the interior of the semiconductor particle layer and voids between the semiconductor particle layer and the counter electrode.
  • Another is a method comprising the steps of coating the electrolyte solution onto the semiconductor particle layer, thereby spreading the solution into the semiconductor particle layer and forming the charge transfer layer thereon, and setting the counter electrode on the charge transfer layer.
  • a normal pressure method utilizing a capillarity may be used as a method for spreading the electrolyte solution into the voids between the semiconductor particle layer and the counter electrode.
  • a reduced pressure method which comprises pumping up the solution from the upper open-ends between the semiconductor particle layer and the counter electrode, not soaked in the solution.
  • an wet-type charge transfer layer may be applied the counter electrode thereon before drying, and then a treatment for preventing liquid-leakage is carried out at the edges thereof.
  • charge transfer layer comprising a gel electrolyte may be coated in a liquid state, gelled by polymerization, etc., and applied the counter electrode thereon, or may be gelled after the application of the counter electrode thereon.
  • Examples of a method for forming a charge transfer layer comprising an wet-type organic hole transporting material or a gel electrolyte include a soaking method, a roller method, a dip method, an air-knife method, an extrusion method, a slide-hopper method, a wire-bar method, a spin method, a spray method, a cast method, various printing methods, etc. similarly to the case of forming the semiconductor particle layer, or adsorbing a dye mentioned above.
  • a charge transfer layer comprising a solid electrolyte or a solid hole transporting material may be formed by a dry film-forming method such as a vacuum deposition method and a CVD method, and followed by applying the counter electrode thereon.
  • the charge transfer layer comprising an electrolysis solution or a wet-type hole transporting material that is difficult to be solidified, it is preferable that the edges of the layer is sealed rapidly after coating.
  • the hole transfer layer comprising a hole transporting material which is able to be solidified, it is preferable that the hole transfer layer according to a wet-type application, and then the material is solidified by photo-polymerization, thermal radical polymerization, etc.
  • a method for forming the charge transfer layer may be properly selected in accordance with physical properties of the electrolyte and production conditions.
  • the water content of the charge transfer layer is preferably 10,000 ppm or less, more preferably 2,000 ppm or less, and particularly preferably 100 ppm or less.
  • the counter electrode acts as an anode of the cell.
  • the counter electrode may be a single layer structure of a counter conductive layer comprising an electrically conductive material, or composed of the counter electrically conductive layer and a support, similarly to the above-described conductive support.
  • the material for the counter electrically conductive layer include metals such as platinum, gold, silver, copper, aluminum, rhodium and indium, carbon, electrically conductive metal oxides such as indium-tin composite oxides, fluorine-doped tin oxides, etc.
  • the substrate for the counter electrode is preferably made of glass or plastic, and the electrically conductive layer is coated or vapor-deposited thereon.
  • the thickness of the counter electrically conductive layer is not limited in particular, preferably 3 nm to 10 ⁇ m. In the case of the metal counter electrically conductive layer, the thickness thereof is preferably 5 ⁇ m or less, more preferably 5 nm to 3 ⁇ m.
  • any one or both of the conductive support and the counter electrode may be irradiated, at least one of them may be substantially transparent to have light reached to the photosensitive layer.
  • the conductive support is preferably transparent, and light is irradiated from the side thereof.
  • the counter electrode preferably has a light-reflective property.
  • Such a counter electrode may be made of glass or plastic having vapor-deposited metal or electrically conductive oxides thereon, or a metal.
  • the counter electrode may be (i) applied on the charge transfer layer formed beforehand, or (ii) placed on the semiconductor particle layer through a spacer before forming the charge transfer layer.
  • the electrically conductive material may be coated, metal-plated, or vapor-deposited (PVD, CVD, etc.) directly on the charge transfer layer, or the electrically conductive layer composing the counter electrode may be laminated on the charge transfer layer.
  • the counter electrode may be settled on the semiconductor particle layer through the spacer, and the open ends between the electrode and the semiconductor layer is soaked in an electrolysis solution. The electrolysis solution penetrates into the voids between the counter electrode and the semiconductor particle layer, utilizing capillarity or reduced pressure.
  • the electrolyte molecules may be cross-linked by heating, etc., if necessary. Similar to the case of the conductive support, it is preferable to use the metal lead for reducing resistance of the electrode particularly in the case where the counter electrode is transparent. Further, preferable materials of the metal lead, preferable methods for setting the metal lead, preferable reduced-degree of the incident light amount caused by the metal lead, etc. are the same as the case of the conductive support, mentioned above.
  • Functional layers such as a protective layer and a reflection-preventing layer may be formed on one of or both of the conductive support and the counter electrode each acting as the electrode.
  • they may be formed by a simultaneous multi-layer coating method or a successive coating method.
  • the simultaneous multi-layer coating method is preferred from a viewpoint of productivity.
  • a slide-hopper method and an extrusion method are suitable from the viewpoint of both productivity and homogeneity of a coated film for the simultaneous multi-layer coating method.
  • the functional layers may be formed by a vapor-deposition method and a sticking method, and these methods may be selected in accordance with the materials for the layer.
  • the photoelectric conversion device may have various interior structures in accordance with an end of use. These structures are classified into two major forms composed of a structure allowing incidence of light from both faces, and a structure allowing it from only one face.
  • Fig. 2 to 9 illustrate examples of the interior structure of the photoelectric conversion device which can be preferably used in the present invention.
  • Fig. 2 illustrates a preferable structure of a photoelectric conversion device of the present invention, where a photosensitive layer 20 and a charge transfer layer 30 formed between a transparent electrically conductive layer 10a and a transparent counter electrically conductive layer 40a. This structure allows incidence of light from both faces of the photoelectric conversion device.
  • Fig. 3 illustrates a preferable structure of a photoelectric conversion device of the present invention, where on a transparent substrate 50a partially having a metal lead 11 is formed a transparent electrically conductive layer 10a, an undercoating layer 60, a photosensitive layer 20, a charge transfer layer 30 and a counter electrically conductive layer 40 are laminated thereon in this order, and a substrate 50 is further set thereon.
  • This structure allows incidence of light from the electrically conductive layer side.
  • Fig. 4 illustrates a preferable structure of a photoelectric conversion device of the present invention, where a photosensitive layer 20 is applied on a substrate 50 having an electrically conductive layer 10 thereon through an undercoating layer 60, a charge transfer layer 30 and a transparent counter electrically conductive layer 40a are formed thereon, and further a transparent substrate 50a locally having a metal lead 11 thereon is placed so that the metal lead 11 side orients inward.
  • This structure allows incidence of light from the counter electrode side.
  • Fig. 5 illustrates a preferable structure of a photoelectric conversion device of the present invention, where on two transparent substrates 50 each having a metal lead 11 partially are formed a transparent electrically conductive layer 10a or a transparent counter electrically conductive layer 40a, respectively, and an undercoating layer 60, a photosensitive layer 20 and a charge transfer layer 30 placed between the conductive layers.
  • This structure allows incidence of light from both faces of the photoelectric conversion device.
  • Fig. 6 illustrates a preferable structure of a photoelectric conversion device of the present invention, where on a transparent substrate 50a having a transparent electrically conductive layer 10a thereon is formed a photosensitive layer 20 through an undercoating layer 60, a charge transfer layer 30 and a counter electrically conductive layer 40 are applied thereon, and further a substrate 50 is placed thereon.
  • This structure allows incidence of light from the electrically conductive layer side.
  • Fig. 7 illustrates a preferable structure of a photoelectric conversion device of the present invention, where on a substrate 50 having an electrically conductive layer 10 thereon is applied a photosensitive layer 20 through an undercoating layer 60, a charge transfer layer 30 and a transparent counter electrically conductive layer 40a are applied thereon, and further a transparent substrate 50a is placed thereon.
  • This structure allows incidence of light from the counter electrode side.
  • Fig. 8 illustrates a preferable structure of a photoelectric conversion device of the present invention, where on a transparent substrate 50a having a transparent electrically conductive layer 10a thereon is applied a photosensitive layer 20 through an undercoating layer 60, a charge transfer layer 30 and a transparent counter electrically conductive layer 40a are applied thereon, and further a transparent substrate 50a is placed thereon.
  • This structure allows incidence of light from both faces of the photoelectric conversion device.
  • Fig. 9 illustrates a preferable structure of a photoelectric conversion device of the present invention, where on a substrate 50 having an electrically conductive layer 10 thereon is applied a photosensitive layer 20 through an undercoating layer, a solid charge transfer layer 30 is applied thereon, and further a counter electrically conductive layer 40 or a metal lead 11 is locally applied thereon. This structure allows incidence of light from the counter electrode side.
  • the photo-electrochemical cell of the present invention comprises the above-described photoelectric conversion device that is designed to work in the outer circuit.
  • the side face of the photo-electrochemical cell is preferably sealed with a polymer or an adhesive agent, etc. to prevent deterioration of the compositions thereof and volatility of the content in the cell.
  • the outer circuit is connected to the conductive support and the counter electrode via a lead.
  • Various known circuits may be used in the present invention.
  • the interior structure of the photoelectric conversion device may be essentially the same as above.
  • Module structures of the solar cell comprising the photoelectric conversion device of the present invention will be explained below.
  • the dye-sensitized solar cell of the present invention may have essentially the same module structure as that of prior art solar cells.
  • the solar cell module generally has a structure where a cell is formed on a substrate made of metal, ceramic, etc., they are covered with a packing resin, a protective glass, etc., and light is introduced from an opposite side of the substrate.
  • the solar cell module may have a structure where a cell is formed on a substrate made of a transparent material such as a tempered glass, and light is introduced from the transparent substrate side.
  • a module structure are structures that are called "superstraight type", "substrate type” or "potting type", substrate-integrated type structure used for an amorphous silicon solar cell, etc.
  • the dye-sensitized solar cell of the present invention may have a module structure properly selected from the above structures in accordance with ends, places and environment at use.
  • the super straight type modules and the substrate type modules generally have a structure where cells are set at a regular intervals between substrates, adjoining cells are connected by a metal lead, a flexible wirering, etc., and collector electrodes are set at the outer marginal portion so that a generated electric power can be delivered to the outside.
  • One or both side of the substrates are transparent and subjected to a reflection-preventing treatment.
  • Various kinds of plastic material such as ethylene vinyl acetate (EVA) may be contained between the substrate and the cell to protect the cell or to improve a collector efficiency.
  • EVA ethylene vinyl acetate
  • Such a plastic material is may be used in a form of a film or a packing resin.
  • the substrate of one side can be omitted by forming a surface protective layer composed of a transparent plastic film, or by hardening the above-described packing resin to give a protection function.
  • the periphery of the substrates may be sandwiched and fixed by metallic flames, and the substrates and the flames may be sealed with a sealant.
  • flexible materials may be used for the cell proper, the substrate, the packing agent and the sealant to constructing the solar cell on a curved surface.
  • the super straight type solar cell module may be manufactured by the following steps of: placing cells on a front substrate sent out from a substrate-supplying device together with lead lines for connecting a sealant to the cells and a sealant for back surface while carrying the front substrate by a belt conveyer, etc.; placing a back substrate or a back cover thereon; and setting flames at the outer edge portion.
  • the substrate type solar cell may be manufactured by the following steps of: placing cells on a substrate sent out from a substrate-supplying device together with lead lines for connecting the cells and a sealant, etc. while carrying the substrate by a belt conveyer, etc.; placing a front cover thereon; and setting flames at the outer edge portion.
  • Fig. 10 shows structure of an embodiment of the substrate-integrated type solar cell produced by modularizing a photoelectric conversion device of the present invention.
  • the solar cell shown in Fig. 10 has a structure where cells having a transparent electrically conductive layer 10a, a photosensitive layer 20 containing dye-adsorbed TiO 2 , a solid charge transfer layer 30 and a metal counter electrically conductive layer 40 are modularized on one surface of a transparent substrate 50a, and a reflection-preventing layer 70 is applied on the other surface of the substrate.
  • a desired module structure can be obtained by patterning according to a semiconductor process technique such as selective metal plating, selective etching, CVD, PVD, etc., or a mechanical method such as laser scribing, plasma CVM, polishing, etc. so that the transparent electrically conductive layers, the photosensitive layers, the charge transfer layers and the counter electrode etc. are three-dimensionally arranged at a regular interval on the substrate.
  • a semiconductor process technique such as selective metal plating, selective etching, CVD, PVD, etc.
  • a mechanical method such as laser scribing, plasma CVM, polishing, etc.
  • various materials such as a liquid EVA (ethylene vinyl acetate), an EVA film, a mixture of fluorinated vinylidene copolymer and an acrylic resin, etc. may be used in accordance with objects such as application of weather-resistance or electric insulation, improvement in light-condensing efficiency, protection of a cell (improvement in impact resistance), etc.
  • the outer edge of the module and the frame surrounding the fringe are preferably sealed with the sealant having high weather-resistance and moisture permeability.
  • the strength and light transmittance of the sealed cell can be enhanced by adding a transparent filter into the sealant.
  • a method suited to a property of the sealant is preferably used.
  • Various methods therefor may be used such as roll pressurization followed by thermal adherence, vacuum pressurization followed by thermal adherence, etc. for the film sealant, and roll coat, bar coat, spray coat, screen printing, etc. for the liquid or paste sealant.
  • a flexible material such as PET and PEN is used for a substrate, because after constructing the cells on a roll-like support, the sealing layer can be successively laminated according to the above-described methods to obtain a high productivity.
  • the light-taking surface of the substrate, generally a tempered glass substrate, of the module may be subjected to a reflection-preventing treatment.
  • the reflection-preventing treatment may comprise laminating a reflection-preventing film, coating a reflection-preventing layer, etc.
  • the surface of the solar cell may be grooved or textured, thereby enhancing efficiency of utilizing incident light.
  • the light reflectance may be increased by vapor-depositing or metal-plating the substrate with Ag, Al, etc. after a mirror plane-polishing, applying a layer comprising an Al-Mg alloy, an Al-Ti alloy, etc. as reflective layer at the lowest layer in the solar cell, making the lowest layer to a texture structure by annealing.
  • the cells are generally connected each other by a wire bonding method or using an electrically conductive flexible sheet.
  • the cells may be connected by methods such as electrically connecting while fixing the cells by an electrically conductive adhesives, adhesive tapes, etc., and pattern-coating an electrically conductive hot melt at an intended position.
  • a solar cell comprising a flexible support made of a polymer film, etc. may be manufactured by a method comprising the steps: forming cells in the same manner as described above while sending out a roll-like support; cutting it to an intended size; and sealing the marginal portion thereof with a flexible, moisture permeable material.
  • the solar cell may have a module structure called "SCAF" described in Solar Energy Materials and Solar Cells, 48, p 383 to 391. Further, the solar cell comprising the flexible support may be used while adhered and fixed to a curved glass, etc.
  • the solar cells comprising the photoelectric conversion device of the present invention may have various kinds of forms and functions in accordance with ends of use and environment of use.
  • the first metal complex dye, photoelectric conversion device and photo-electrochemical cell The first metal complex dye, photoelectric conversion device and photo-electrochemical cell
  • the metal complex dye D-2 was synthesized in the same manner as synthesis of D-1 except for using sodium hydroxamate 2 in place of potassium oxalate in the same molar amount.
  • the structure of the product was identified by NMR spectra and MS spectra.
  • the metal complex dye D-5 was synthesized in the same manner as synthesis of D-1 except for using sodium 1,2-phenylenesulfide 3 in place of potassium oxalate in the same molar amount.
  • the structure of the product was identified by NMR spectra and MS spectra.
  • the first metal complex dyes of the present invention other than the above-described dyes can be also easily synthesized by using suitable ligands in a similar method to above.
  • 3-methoxypropionitrile solutions each comprising 1 ⁇ 10 -4 mol/l of the first metal complex dye D-1, D-2, D-5, D-46 or D-47, or a comparative dye 1 illustrated below were prepared.
  • the thermal stability of each dye was evaluated by a retention (%) of maximum absorbance in the solutions after leaving the solution for 100 hours at 80 °C. The results are shown in Table 1.
  • each metal complex dyes of the present invention exhibited an excellent thermal stability with little reduction of the maximum absorbance.
  • a stainless steel vessel coated with Teflon inside and having an inner volume of 200 ml was charged with 15 g of titanium dioxide Degussa P-25 manufactured by Nippon Aerosil K.K., 45 g of water, 1 g of a dispersant Triton X-100 manufactured by Aldrich, and 30 g of zirconia beads having a diameter of 0.5 mm manufactured by Nikkato K.K. These contents were subjected to a dispersion treatment at 1500 rpm for 2 hours by means of a sand-grinder mill manufactured by Imex K.K. The zirconia beads were removed from the resulting dispersion by filtration to obtain the titanium dioxide dispersion. The average particle diameter of the titanium dioxide particles in the dispersion was 2.5 ⁇ m. Incidentally, the particle diameter was measured by Master Sizer manufactured by MALVERN.
  • the above-described dispersion was coated on an electrically conductive surface of a conductive glass having a fluorine-doped tin oxide layer thereon by a glass bar.
  • a conductive glass Used as the conductive glass was 20 mm ⁇ 20 mm of TCO Glass-U manufactured by Asahi Glass K.K. with surface resistance of approximately 30 ⁇ /square.
  • a coating amount of the semiconductor particles was 20 g/m 2 .
  • the dispersion at once after adhesive tape was attached to a part of the conductive surface (3 mm from the edge) of each conductive glass as a spacer, and the glasses were arranged so that the adhesive tapes come to both edges thereof.
  • the coated glasses were air-dried for one day at a room temperature after peeling the adhesive tapes.
  • the glasses were placed in an electric furnace (muffle furnace FP-32, manufactured by Yamato Science K.K.), followed by calcinating at 450 °C for 30 minutes to obtain TiO 2 electrodes.
  • the electrodes were taken out of the furnace and cooled, they were immersed in the methanol solutions each comprising the metal complex dye of the present invention or the comparative dye 1 for 15 hours to absorbing the dyes.
  • the concentration of the dye in the methanol solution was 3 ⁇ 10 -4 mol/l.
  • the dye-adsorbed TiO 2 electrodes were further immersed in 4-t-butylpyridine for 15 minutes, then washed with ethanol and air-dried.
  • the thickness of thus-obtained photosensitive layer was 10 ⁇ m.
  • the 20 mm ⁇ 20 mm of dye-sensitized TiO 2 electrode glass substrate prepared as described above was put on platinum-vapor deposited glass having the same size as the TiO 2 electrode.
  • an electrolysis solution composed of 3-methoxypropionitrile, and 0.65 mol/l of 1-methyl-3-hexylimidazolium iodide and 0.05 mol/l of iodine as an electrolyte was permeated into a crevice between the glasses through capillarity to be introduced into the TiO 2 electrode, thereby obtaining a photo-electrochemical cell.
  • the photo-electrochemical cell as shown in Fig.
  • a simulated sunlight was irradiated to the photo-electrochemical cell, and the electricity generated in the cell was measured by current-voltage tester Keithley SMU238.
  • the simulated sunlight was obtained by passing light of a 500 W xenone lamp manufactured by Ushio K.K. through an AM 1.5 filter manufactured by Oriel Co. and a sharp cut filter Kenko L-42.
  • the simulated sunlight was free of an ultraviolet radiation and had intensity of 86 mW/cm 2 . This measurement was carried out with respect to the photo-electrochemical cell each comprising the metal complex dyes shown in Table 2.
  • the photoelectric conversion efficiency ( ⁇ ) of each cell is also shown in Table 2.
  • Table 2 showed that the first photo-electrochemical cell containing the first dye of the present invention exhibited the photoelectric conversion efficiency equal or superior to that of the cell containing the comparative dye 1. In addition, the first cell of the present invention exhibited much superior stability to heat and light, as compared with the cell containing the comparative dye 1.
  • the first metal complex dye of the present invention has a high stability to heat and light, and can effectively sensitize semiconductor particles. Consequently, the first photoelectric conversion device using the first dye exhibits a high stability to heat and light and an excellent photoelectric conversion efficiency.
  • the first photo-electrochemical cell comprising the first device of the present invention is extremely useful as a solar cell.
  • the second metal complex dye, photoelectric conversion device and photo-electrochemical cell The second metal complex dye, photoelectric conversion device and photo-electrochemical cell
  • reaction mixture was concentrated, and residue was dissolved in methanol and purified by column chromatography using Sephadex column LH-20 (developing solvent: methanol). Fractions of desired product were concentrated, and residue was dissolved in water. To this was added dilute nitric acid for depositing crystal, and the resultant solution was filtered to obtain 0.060 g of the metal complex dye D-138 (41% yield). The structure of the product was identified by NMR spectra.
  • Pyridylquinoline 13 was synthesized in the same manner as synthesis of pyridylquinoline 9 except for using the commercially available isatin 12 in place of methoxyisatin 7 in the same molar amount.
  • the metal complex dye D-93 and D-136 were synthesized in the same manners as syntheses of D-100 and D-138 except for using the pyridylquinoline 13 in place of the pyridylquinoline 9 , respectively.
  • the structures of the products were identified by NMR spectra.
  • the metal complex dye D-95 and D-137 were synthesized in the same manners as in syntheses of D-93 and D-136 except for using sodium dithiocarbamate 14 in place of sodium thiocyanate in 1/2 molar amount, respectively.
  • the structures of the products were identified by NMR spectra.
  • the second metal complex dyes of the present invention other than the above-described dyes can be also easily synthesized by using suitable ligands in a similar method to above.
  • Ligands in the second dyes of the present invention are commercially available, or can be easily synthesized referring to Synth. Commun., 27, 2165 (1997), Aust. J. Chem., 25, 1631 (1972), etc. or references therein.
  • the second metal complex dye of the present invention had a maximum absorption wavelength longer than that of the comparative dye 1.
  • the absorption spectrum of the second dye of the present invention was broader than that of the comparative dye 1. Accordingly, the photo-electrochemical cell utilizing the second metal complex dye of the present invention can efficiently convert light in longer wavelength region into electricity as compared with a prior art metal complex dye.
  • the photo-electrochemical cells each comprising the second metal complex dye represented by the above general formula (II) or the comparative dye 1 were prepared in the same manner as EXAMPLE 1.
  • the comparative dye 1 had no absorbability to light at 800 nm, the photo-electrochemical cell using the dye could not convert the light into electricity.
  • the second photo-electrochemical cell utilizing the second dyes of the present invention exhibited an excellent photoelectric conversion efficiency to such a light having a long wavelength.
  • the second metal complex dye of the present invention has a high absorbability against light in a large wavelength region containing visible region to infrared region. Consequently, the second photoelectric conversion device using the second dye exhibits a high photoelectric conversion efficiency to a light in the visible region to the infrared region.
  • the second photo-electrochemical cell comprising the second device is extremely useful as a solar cell.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
EP00108862A 1999-04-26 2000-04-26 Rutheniumkomplex-Farbstoff Expired - Lifetime EP1049117B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10014756A EP2280404A3 (de) 1999-04-26 2000-04-26 Metallkomplex-Farbstoff für eine photoelektrochemische Zelle

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP11782899 1999-04-26
JP11117828A JP2000311723A (ja) 1999-04-26 1999-04-26 錯体色素、光電変換素子および光電気化学電池
JP16756499 1999-06-14
JP16756499 1999-06-14
JP37560999A JP4285671B2 (ja) 1999-06-14 1999-12-28 光電変換素子および光電気化学電池ならびに金属錯体色素
JP37560999 1999-12-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP10014756.0 Division-Into 2010-11-18

Publications (3)

Publication Number Publication Date
EP1049117A2 true EP1049117A2 (de) 2000-11-02
EP1049117A3 EP1049117A3 (de) 2005-03-23
EP1049117B1 EP1049117B1 (de) 2011-11-02

Family

ID=27313463

Family Applications (2)

Application Number Title Priority Date Filing Date
EP10014756A Withdrawn EP2280404A3 (de) 1999-04-26 2000-04-26 Metallkomplex-Farbstoff für eine photoelektrochemische Zelle
EP00108862A Expired - Lifetime EP1049117B1 (de) 1999-04-26 2000-04-26 Rutheniumkomplex-Farbstoff

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP10014756A Withdrawn EP2280404A3 (de) 1999-04-26 2000-04-26 Metallkomplex-Farbstoff für eine photoelektrochemische Zelle

Country Status (2)

Country Link
EP (2) EP2280404A3 (de)
AT (1) ATE531722T1 (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1231619A2 (de) * 2001-02-13 2002-08-14 Fuji Photo Film Co., Ltd. Metallkomplex-Farbstoff für eine photoelektrochemische Zelle
US6664462B2 (en) * 2000-03-13 2003-12-16 National Institute Of Advanced Industrial Science And Technology Metal complex having β-diketonate, process for production thereof, photoelectric conversion element, and photochemical cell
EP1511116A1 (de) * 2002-06-04 2005-03-02 Nippon Oil Corporation Fotoelektrischer wandler
EP1542249A2 (de) * 2003-12-12 2005-06-15 Samsung SDI Co., Ltd. Farbstoffsensibilisierte Solarzelle und Herstellungsverfahren
US20110304262A1 (en) * 2010-06-11 2011-12-15 Universal Display Corporation Delayed-Fluorescence OLED
WO2012001628A1 (en) * 2010-06-29 2012-01-05 Basf Se Photoelectric conversion device comprising hydroxamic acid derivative or salt thereof as additive and process for producing same
WO2012127468A3 (en) * 2011-03-24 2013-06-13 Ben-Gurion University Of The Negev Research And Development Authority Coatings for solar applications

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013126385A1 (en) 2012-02-21 2013-08-29 Northwestern University Photoluminescent compounds
US9966198B2 (en) 2014-04-24 2018-05-08 Northwestern University Solar cells with perovskite-based light sensitization layers
US9305715B2 (en) 2014-08-01 2016-04-05 Hunt Energy Enterprises Llc Method of formulating perovskite solar cell materials

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927721A (en) 1988-02-12 1990-05-22 Michael Gratzel Photo-electrochemical cell
WO1994004497A1 (en) 1992-08-21 1994-03-03 Ecole polytechnique fédérale de Lausanne (EPFL) Organic compounds
WO1997011955A1 (en) 1995-09-26 1997-04-03 R.V.A. Capital Risque S.A. Method of preparation of mononuclear ruthenium complexes
WO1998050393A1 (en) 1997-05-07 1998-11-12 Ecole Polytechnique Federale De Lausanne Metal complex photosensitizer and photovoltaic cell

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE513714A (de) 1951-08-23 1900-01-01
BE545464A (de) 1955-02-23 1900-01-01
JPS584589B2 (ja) 1976-08-12 1983-01-27 富士写真フイルム株式会社 塗布方法
US4764625A (en) 1980-12-12 1988-08-16 Xerox Corporation Process for preparing arylamines
US4539507A (en) 1983-03-25 1985-09-03 Eastman Kodak Company Organic electroluminescent devices having improved power conversion efficiencies
DE68912216T2 (de) 1988-06-28 1994-07-28 Agfa Gevaert Nv Elektrophotographisches Registriermaterial.
JPH07106853B2 (ja) 1989-06-05 1995-11-15 三菱電機株式会社 エレベータのかご室装置
JPH07119409B2 (ja) 1990-03-19 1995-12-20 凸版印刷株式会社 有機薄膜ｅｌ素子
JPH04175395A (ja) 1990-07-06 1992-06-23 Ricoh Co Ltd 電界発光素子
US5061569A (en) 1990-07-26 1991-10-29 Eastman Kodak Company Electroluminescent device with organic electroluminescent medium
JP3150330B2 (ja) 1990-09-19 2001-03-26 株式会社東芝 有機薄膜素子
JP3185280B2 (ja) 1991-02-18 2001-07-09 ミノルタ株式会社 新規ベンジルジフェニル化合物、このベンジルジフェニル化合物を用いた用いた感光体およびエレクトロルミネセンス素子
JPH04264189A (ja) 1991-02-18 1992-09-18 Fuji Electric Co Ltd エレクトロルミネセンス素子
JP2927017B2 (ja) 1991-03-18 1999-07-28 ミノルタ株式会社 新規スチリル化合物、このスチリル化合物を用いた感光体およびエレクトロルミネセンス素子
JP3065130B2 (ja) 1991-07-22 2000-07-12 三井化学株式会社 有機電界発光素子
JP3565870B2 (ja) 1992-02-25 2004-09-15 株式会社リコー 電界発光素子
JP3111635B2 (ja) 1992-05-25 2000-11-27 住友化学工業株式会社 有機エレクトロルミネッセンス素子
JP3279014B2 (ja) 1993-11-19 2002-04-30 三菱化学株式会社 有機電界発光素子
DE69416428T2 (de) 1993-12-29 1999-09-16 Ecole Polytech Photoelektrochemische zelle und elektrolyt für diese zelle
JP3579078B2 (ja) 1994-03-11 2004-10-20 石原産業株式会社 光電変換材料用半導体
JP3284737B2 (ja) 1994-03-16 2002-05-20 三菱化学株式会社 有機電界発光素子
EP0718288B8 (de) 1994-12-21 2005-10-26 Hydro Quebec Flüssige, hydrophobe Salze, ihre Herstellung und ihre Verwendung in der Elektrochemie
DE19533850A1 (de) 1995-09-13 1997-03-27 Hoechst Ag Photovoltaische Zelle

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927721A (en) 1988-02-12 1990-05-22 Michael Gratzel Photo-electrochemical cell
WO1994004497A1 (en) 1992-08-21 1994-03-03 Ecole polytechnique fédérale de Lausanne (EPFL) Organic compounds
WO1997011955A1 (en) 1995-09-26 1997-04-03 R.V.A. Capital Risque S.A. Method of preparation of mononuclear ruthenium complexes
WO1998050393A1 (en) 1997-05-07 1998-11-12 Ecole Polytechnique Federale De Lausanne Metal complex photosensitizer and photovoltaic cell

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
A. JURIS ET AL., COORD. CHEM. REV., vol. 84, 1988, pages 85 - 277
AUST. J. CHEM., vol. 25, 1972, pages 1631
CHEM. PHYS. LETT., vol. 71, 1980, pages 220
CHEM. PHYS. LETT., vol. 85, 1982, pages 309
DALTON, J. CHEM. SOC., 1973, pages 204
J. AM. CHEM. SOC., vol. 115, 1993, pages 6382
M. K. NAZEERUDDIN ET AL., J. CHEM. SOC. DALTON TRANS., 1997, pages 4571 - 4578
NATURE, vol. 353, 1991, pages 737 - 740
S. RUILE ET AL., INORG. CHEM. ACTA, vol. 261, 1997, pages 129 - 140
SYNTH. COMMUN., vol. 27, 1997, pages 2165

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664462B2 (en) * 2000-03-13 2003-12-16 National Institute Of Advanced Industrial Science And Technology Metal complex having β-diketonate, process for production thereof, photoelectric conversion element, and photochemical cell
EP1231619A2 (de) * 2001-02-13 2002-08-14 Fuji Photo Film Co., Ltd. Metallkomplex-Farbstoff für eine photoelektrochemische Zelle
EP1231619A3 (de) * 2001-02-13 2004-01-21 Fuji Photo Film Co., Ltd. Metallkomplex-Farbstoff für eine photoelektrochemische Zelle
EP1511116A4 (de) * 2002-06-04 2010-05-05 Nippon Oil Corp Fotoelektrischer wandler
EP1511116A1 (de) * 2002-06-04 2005-03-02 Nippon Oil Corporation Fotoelektrischer wandler
EP1542249A2 (de) * 2003-12-12 2005-06-15 Samsung SDI Co., Ltd. Farbstoffsensibilisierte Solarzelle und Herstellungsverfahren
EP1542249A3 (de) * 2003-12-12 2006-03-29 Samsung SDI Co., Ltd. Farbstoffsensibilisierte Solarzelle und Herstellungsverfahren
US20110304262A1 (en) * 2010-06-11 2011-12-15 Universal Display Corporation Delayed-Fluorescence OLED
CN102933682A (zh) * 2010-06-11 2013-02-13 通用显示公司 延迟荧光oled
US8673458B2 (en) * 2010-06-11 2014-03-18 Universal Display Corporation Delayed fluorescence OLED
US9543532B2 (en) 2010-06-11 2017-01-10 Universal Display Corporation Organic electroluminescent materials and devices
WO2012001628A1 (en) * 2010-06-29 2012-01-05 Basf Se Photoelectric conversion device comprising hydroxamic acid derivative or salt thereof as additive and process for producing same
WO2012127468A3 (en) * 2011-03-24 2013-06-13 Ben-Gurion University Of The Negev Research And Development Authority Coatings for solar applications

Also Published As

Publication number Publication date
ATE531722T1 (de) 2011-11-15
EP2280404A2 (de) 2011-02-02
EP1049117B1 (de) 2011-11-02
EP1049117A3 (de) 2005-03-23
EP2280404A3 (de) 2011-04-13

Similar Documents

Publication Publication Date Title
JP4285671B2 (ja) 光電変換素子および光電気化学電池ならびに金属錯体色素
JP4874454B2 (ja) 光電変換素子および光電池
KR101008226B1 (ko) 신규한 유기염료 및 이의 제조방법
EP1075005B1 (de) Elektrolytzusammensetzung und photolektrochemische Zelle
US6586670B2 (en) Photoelectric conversion device and method for producing same
EP1176618B1 (de) Ruthenium-Komplexfarbstoff, photoelektrische Umwandlungsvorrichtung und photoelektrische Zelle
JP4162106B2 (ja) 光電変換素子および光電気化学電池ならびに金属錯体色素
JP2000294306A (ja) 光電変換素子および光電気化学電池
EP1089305B1 (de) Elektrolyt-Zusammensetzung, photoelektrische Umwandlungsvorrichtung und photoelektrochemische Zelle
JP2000268892A (ja) 光電変換素子および光電池
EP1052661B1 (de) Metallkomplex-Farbstoff für eine photoelektrochemische Zelle
EP1049117A2 (de) Metallkomplex-Farbstoff für eine photoelektrochemische Zelle
JP5620496B2 (ja) 金属錯体色素、光電変換素子及び光電気化学電池
EP1213776A2 (de) Metallkomplex-Farbstoff für eine farbstoffsensibilisierte Solarzelle
JP2000353553A (ja) 光電変換素子および光電池
EP1164603A2 (de) Farbstoffsensibilisierte Solarzelle
EP1231619A2 (de) Metallkomplex-Farbstoff für eine photoelektrochemische Zelle
EP1271581B1 (de) Elektrolytezusammensetzung, photoelektrische Umwandlungsvorrichtung und photoelektrochemische Zelle
JP4521737B2 (ja) 太陽光発電装置
JP2001060467A (ja) 光電変換素子および光電気化学電池ならびに金属錯体色素
JP2007073289A (ja) 光電変換素子
JP2001203005A (ja) 光電変換素子および光電池ならびに金属錯体色素
JP2001060468A (ja) 光電変換素子および光電池ならびに金属錯体色素
JP5557818B2 (ja) 金属錯体色素
EP3522191A1 (de) Fotoelektrisches umwandlungselement, farbstoffsensibilisierte solarzelle, metallkomplexfarbstoff, farbstofflösung und oxidhalbleiterelektrode

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

RIC1 Information provided on ipc code assigned before grant

Ipc: 7H 01L 51/30 A

Ipc: 7H 01G 9/20 B

Ipc: 7C 07F 15/00 B

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

17P Request for examination filed

Effective date: 20050426

AKX Designation fees paid

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: FUJIFILM CORPORATION

17Q First examination report despatched

Effective date: 20070507

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 60046614

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0051300000

Ipc: C07F0015000000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIC1 Information provided on ipc code assigned before grant

Ipc: C07F 15/00 20060101AFI20110217BHEP

Ipc: H01L 51/46 20060101ALI20110217BHEP

Ipc: H01G 9/20 20060101ALI20110217BHEP

RTI1 Title (correction)

Free format text: RUTHENIUM COMPLEX DYE

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 60046614

Country of ref document: DE

Effective date: 20120112

REG Reference to a national code

Ref country code: NL

Ref legal event code: VDEP

Effective date: 20111102

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120203

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120302

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20111102

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20111102

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20111102

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20111102

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20111102

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20111102

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 531722

Country of ref document: AT

Kind code of ref document: T

Effective date: 20111102

26N No opposition filed

Effective date: 20120803

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 60046614

Country of ref document: DE

Effective date: 20120803

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120430

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20121228

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20111102

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120430

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120430

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120426

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120430

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120213

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20111102

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120426

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20190416

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20190424

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 60046614

Country of ref document: DE

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20200425

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20200425