EP0790618A1 - Appareil mémoire à semi-conducteur capable de positionner la valeur de la tension du substrat en fonction du mode - Google Patents

Appareil mémoire à semi-conducteur capable de positionner la valeur de la tension du substrat en fonction du mode Download PDF

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Publication number
EP0790618A1
EP0790618A1 EP96114904A EP96114904A EP0790618A1 EP 0790618 A1 EP0790618 A1 EP 0790618A1 EP 96114904 A EP96114904 A EP 96114904A EP 96114904 A EP96114904 A EP 96114904A EP 0790618 A1 EP0790618 A1 EP 0790618A1
Authority
EP
European Patent Office
Prior art keywords
node
substrate voltage
potential
level
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96114904A
Other languages
German (de)
English (en)
Other versions
EP0790618B1 (fr
Inventor
Jun Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of EP0790618A1 publication Critical patent/EP0790618A1/fr
Application granted granted Critical
Publication of EP0790618B1 publication Critical patent/EP0790618B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
EP96114904A 1996-02-15 1996-09-17 Appareil mémoire à semi-conducteur capable de positionner la valeur de la tension du substrat en fonction du mode Expired - Lifetime EP0790618B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27636/96 1996-02-15
JP8027636A JPH09219092A (ja) 1996-02-15 1996-02-15 半導体記憶装置

Publications (2)

Publication Number Publication Date
EP0790618A1 true EP0790618A1 (fr) 1997-08-20
EP0790618B1 EP0790618B1 (fr) 1998-12-02

Family

ID=12226440

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96114904A Expired - Lifetime EP0790618B1 (fr) 1996-02-15 1996-09-17 Appareil mémoire à semi-conducteur capable de positionner la valeur de la tension du substrat en fonction du mode

Country Status (7)

Country Link
US (1) US5694365A (fr)
EP (1) EP0790618B1 (fr)
JP (1) JPH09219092A (fr)
KR (1) KR100244837B1 (fr)
CN (1) CN1113361C (fr)
DE (1) DE69601067T2 (fr)
TW (1) TW310434B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199987B2 (ja) * 1995-08-31 2001-08-20 株式会社東芝 半導体集積回路装置およびその動作検証方法
JPH1186548A (ja) * 1997-09-16 1999-03-30 Mitsubishi Electric Corp 半導体記憶装置
KR100309459B1 (ko) * 1998-04-13 2001-12-17 김영환 반도체장치의기판전압발생기
KR100272511B1 (ko) * 1998-08-10 2000-11-15 김영환 반도체 메모리소자의 고전압 발생회로
JP3802239B2 (ja) 1998-08-17 2006-07-26 株式会社東芝 半導体集積回路
JP3430050B2 (ja) * 1998-12-28 2003-07-28 日本電気株式会社 半導体記憶装置およびその駆動方法
JP2002367369A (ja) * 2001-06-05 2002-12-20 Nec Corp 半導体記憶装置
CN104610928A (zh) * 2015-02-02 2015-05-13 孙建林 一种太阳能水箱的蓄热材料的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401897A (en) * 1981-03-17 1983-08-30 Motorola, Inc. Substrate bias voltage regulator
US4985869A (en) * 1988-07-05 1991-01-15 Hitachi, Ltd. Semiconductor memory device with an improved substrate back-bias arrangement
GB2300282A (en) * 1995-04-26 1996-10-30 Samsung Electronics Co Ltd Substrate bias voltage control circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US142967A (en) * 1873-09-16 Improvement in bench-irons for harness-makers
JPS59162690A (ja) * 1983-03-04 1984-09-13 Nec Corp 擬似スタテイツクメモリ
JPH0778992B2 (ja) * 1988-02-23 1995-08-23 三菱電機株式会社 ダイナミック型半導体記憶装置
JP2634241B2 (ja) * 1989-05-26 1997-07-23 三菱電機株式会社 半導体記憶装置
JPH04114393A (ja) * 1990-09-04 1992-04-15 Mitsubishi Electric Corp 半導体集積回路
EP0545266A3 (en) * 1991-11-29 1993-08-04 Nec Corporation Semiconductor integrated circuit
US5329168A (en) * 1991-12-27 1994-07-12 Nec Corporation Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources
JPH05274876A (ja) * 1992-03-30 1993-10-22 Mitsubishi Electric Corp 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401897A (en) * 1981-03-17 1983-08-30 Motorola, Inc. Substrate bias voltage regulator
US4985869A (en) * 1988-07-05 1991-01-15 Hitachi, Ltd. Semiconductor memory device with an improved substrate back-bias arrangement
GB2300282A (en) * 1995-04-26 1996-10-30 Samsung Electronics Co Ltd Substrate bias voltage control circuit

Also Published As

Publication number Publication date
EP0790618B1 (fr) 1998-12-02
KR970063246A (ko) 1997-09-12
CN1113361C (zh) 2003-07-02
KR100244837B1 (ko) 2000-02-15
DE69601067D1 (de) 1999-01-14
JPH09219092A (ja) 1997-08-19
US5694365A (en) 1997-12-02
CN1157460A (zh) 1997-08-20
TW310434B (en) 1997-07-11
DE69601067T2 (de) 1999-05-27

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