EP0649150B1 - Verbundwerkstoff - Google Patents

Verbundwerkstoff Download PDF

Info

Publication number
EP0649150B1
EP0649150B1 EP94115003A EP94115003A EP0649150B1 EP 0649150 B1 EP0649150 B1 EP 0649150B1 EP 94115003 A EP94115003 A EP 94115003A EP 94115003 A EP94115003 A EP 94115003A EP 0649150 B1 EP0649150 B1 EP 0649150B1
Authority
EP
European Patent Office
Prior art keywords
resistor
filler
cores
particles
shells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP94115003A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0649150A1 (de
Inventor
Felix Dr. Greuter
Ralf Dr. Strümpler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Research Ltd Switzerland
ABB Research Ltd Sweden
Original Assignee
ABB Research Ltd Switzerland
ABB Research Ltd Sweden
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Research Ltd Switzerland, ABB Research Ltd Sweden filed Critical ABB Research Ltd Switzerland
Publication of EP0649150A1 publication Critical patent/EP0649150A1/de
Application granted granted Critical
Publication of EP0649150B1 publication Critical patent/EP0649150B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12Overvoltage protection resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/027Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/913Material designed to be responsive to temperature, light, moisture
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256Heavy metal or aluminum or compound thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/259Silicic material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/29Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991Coated
    • Y10T428/2993Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

Definitions

  • the invention is based on an electrical Resistance according to the preambles of claims 1, 6 and 11.
  • An electrical resistor of the aforementioned type is known from EP-A2-0 548 606.
  • This resistor contains a resistance body made of a composite material with a polymer as a matrix.
  • An electrically conductive powder such as carbon black, and a powdery varistor material, for example based on a spray granulate, are embedded in the polymer matrix as fillers.
  • the electrically conductive powder forms current paths through the resistor body in normal operation.
  • the resistance body heats up intensely above a certain value of the current.
  • the polymer matrix expands greatly and thus separates the particles of the electrically conductive filler that form the current path. The electricity is interrupted.
  • the particles of the varistor material form percolating paths above a predetermined limit value of the voltage locally or through the entire resistance body, which dissipate the undesirably high voltage.
  • two different fillers are required for the functions of current interruption and voltage limitation described above and caused by a non-linear behavior of the composite material with regard to the current or the applied voltage. This is undesirable for some applications and may lead to difficulties in the manufacture of the composite.
  • This resistance has one Resistor body made of a PTC composite material with a Polymer matrix and two powders embedded in the matrix, from which one is made of particles with an electrical Conductivity of at least 100 S / m, in particular carbon black, Silver, gold or nickel, and the other of particles with an electrical conductivity of at most 0.1 S / m and the best possible thermal conductivity, such as in particular Silicon, selenium or SiC is formed.
  • the invention lies based on the task of resistance of the aforementioned Specify which is easy to manufacture and by appropriate choice of filler and matrix with regard to its material properties easily to a given Requirements profile can be adjusted.
  • the resistance according to the invention is characterized in that that it is easy by appropriate selection of filler and matrix can be adapted to a specific requirement profile.
  • This requirement profile can already be used for the State-of-the-art PTC behavior, where the resistance is above a transition temperature increases its resistivity nonlinearly and in doing so limits a current carried by him, also a previous one existing varistor behavior after performing the PTC transition include.
  • Such an electrical resistance is then a Varistor with self-protection against excessive heating.
  • the requirement profile can be in addition to the aforementioned PTC transition include another PTC transition.
  • the resistance is then a PTC resistor in which the temperature of the Current is gradually limited.
  • the filler and / or the matrix can be compared to one external physical size due to a structural change, for example a phase transition from solid to liquid, react by a nonlinear change in a material property, for example the electrical conductivity, is caused.
  • a nonlinear change in one Material properties can also be influenced by the external physical quantities, for example an electrical one Field without causing structural changes.
  • a matrix is called active if it when one or more physical quantities act, one Undergoes structural change which leads to a nonlinear Change in a material property of the composite material leads.
  • a matrix is said to be passive if it Impact of one or more physical quantities none Undergoes structural change and therefore not a non-linear one Change in a material property of the composite material evokes.
  • a polymer for example a thermoplastic and / or thermoset and / or an elastomer, is generally provided as the matrix.
  • an inorganic material for example glass, ceramic, for example based on ZrO 2 , quartz, geopolymer and / or metal, can also be provided as the matrix.
  • the matrix is predominantly made up of solids, but may also be liquid if necessary.
  • the matrix can be passive, but is generally selected to actively respond to temperature changes (polyethylene), pressure (elastomers or thermoplastics filled with deformable particles such as hollow spheres, thermoplastics), or electric fields (piezoelectric polymers such as polyvinylidene fluoride) Structural changes responded.
  • the filler should have particles of core-shell structure or of granular structure with average particle sizes of typically contain up to some 100 ⁇ . If the filler a component with particles of granular structure However, the composite material should not have a filler component contain with electrically conductive particles whose electrical conductivity is higher than electrical conductivity the particles of granular structure upon exposure one to a nonlinear change in electrical Conductivity of the composite leading electrical Field.
  • the shells of the particles of core-shell structure are with Advantage from insulating material, whereas the core of this Particles preferably made of electrically conductive and / or exist electrically semiconducting material.
  • the shells of these particles consist of a chalcogenide, such as, in particular, an oxide or sulfide, a nitride, phosphide and / or sulfate, they should be dimensioned such that the electrical conductivity of the composite material is non-linear for a given value of an electrical field acting in the composite material changes. If the particles are then in a passive matrix formed by a thermoplastic or thermosetting polymer, the electrical conductivity of this composite material can change twice nonlinearly when an appropriate electric field is selected. A first of these nonlinear changes causes a voltage limitation, a second a current, power or energy limitation.
  • a chalcogenide such as, in particular, an oxide or sulfide, a nitride, phosphide and / or sulfate
  • the particles are in an active matrix formed by a thermoplastic or thermoset or elastomeric polymer, then a third non-linear change in the conductivity of the composite material can also be achieved, which serves the additional self-protection of the composite material against excessive power consumption and thus against overheating .
  • the cores can advantageously contain doped V 2 O 3 or doped BaTiO 3 and the insulating shells VO 2 , V 2 O 5 , TiO 2 , BaO, BaS or BaSO 4 .
  • the aforementioned advantageous effects can also be achieved with cores made of doped or undoped semiconducting material, such as in particular ZnO, SiC, Si, TiO 2 or SnO 2 .
  • the cores of the particles have electrically conductive material, such as in particular TiC, TiB 2 , BaTi, SrTi, V 2 O 3 , Al, Cu, Sn, Ti or Zn, and the shells of the particles are formed from a material with a high dielectric constant, which is non-linear depends on an external physical size, preferably a ferroelectric or an antiferroelectric, so there is a composite material which can be used as a dielectric.
  • electrically conductive material such as in particular TiC, TiB 2 , BaTi, SrTi, V 2 O 3 , Al, Cu, Sn, Ti or Zn
  • the shells of the particles are formed from a material with a high dielectric constant, which is non-linear depends on an external physical size, preferably a ferroelectric or an antiferroelectric, so there is a composite material which can be used as a dielectric.
  • the matrix is formed by an elastomeric and therefore pressure-active polymer
  • the shells contain a bismuthate such as, in particular, BaW 1/3 Bi 23 O 3 , a niobate such as, in particular, PbFe 0.5 Nb 0.5 0 3 , and a scandate such as in particular PbW 1/3 Sc 2/3 O 3 , a stannate such as in particular SrSnO 3 , a tantalate such as in particular PbFe 0.5 Ta 0.5 O 3 , a titanate such as in particular BaTiO 3 or SrTiO 3 , a zirconate such as in particular PbZrO 3 , a manganite such as in particular PbW 1/3 Mn 2/3 O 3 , a rhenite such as in particular BaMn 0.5 Re 0.5 O 3 , a tellurite such as in particular BaMn 0.5 Te 0.5 0 3 , a tungsten ( VI
  • the matrix in such a filler is formed by a piezoelectric polymer, in particular polyvinylidene fluoride, and the shells contain bismuth, niobate, scandate, stannate, tantalate, titanate, zirconate, manganite, rhenite, tellurite, tungsten (VI) oxide or gallium (VI ) oxide, alone or in a mixture, two nonlinear changes in the dielectric constant are produced in such a composite material when the electric field strength and the temperature change.
  • This composite material can therefore be used as a dielectric of a voltage and temperature-dependent capacitance.
  • a composite material with a corresponding filler but with a matrix formed by an active thermoplastic or thermosetting polymer.
  • the composite contains a filler in which both the cores and the shells of the particles of core-shell structure are formed from electrically conductive material, the cores and / or the shells undergoing a structural change when exposed to temperature, such composite material can be used as a PTC resistor.
  • the shells should have a thickness such that the reduced electrical conductivity of the cores when there is a change in structure causes an increase in the electrical resistance of the composite material, for example a doubling. In this way, a reduction in a current conducted through the PTC resistor, for example a halving, can be achieved very quickly when a limit temperature is reached. If an active matrix, for example a thermoplastic or thermosetting polymer, is additionally provided, then the slower heating of the polymer then further limits the already reduced current.
  • an active matrix for example a thermoplastic or thermosetting polymer
  • the particles of granular structure provided in the filler as an alternative or optionally together with the particles of core-shell structure are formed either by crushing a sintered ceramic or a polycrystalline semiconductor or by spray drying a suspension or solution and calcining or sintering the spray-dried particles.
  • These particles can be ferroelectric or antiferroelectric and are primarily bismuth, niobate, scandate, stannate, tantalate, titanate, zirconate, manganite, rhenite, tellurite, tungsten (VI) oxide or gallium (VI) oxide, alone or in a mixture and also doped or undoped.
  • the particles can also consist of doped metal oxide or carbide, such as SiC, TiO 2 or ZnO, and / or BaTiO 3 , SrTiO 3 , InSb, GaAs or Si.
  • doped metal oxide or carbide such as SiC, TiO 2 or ZnO, and / or BaTiO 3 , SrTiO 3 , InSb, GaAs or Si.
  • Such composites exhibit two non-linear, oppositely directed changes in the electrical conductivity when the temperature changes and can be used as a combined NTC and PTC resistance element. If the particles with a granular structure are embedded in an active matrix, two non-linear changes in the electrical conductivity occur, one of which has a voltage-limiting effect and the other has a current-, power- or energy-limiting effect.
  • a first embodiment of the resistor according to the Invention was - as known from the manufacture of varistors is - initially from a suspension or a solution of zinc oxide and dopants based on several elements, such as Bi, Sb, Mn, Co, Al, ..., by spray drying a granulate with particle diameters generated between 3 and 300 microns.
  • the granules was sintered into a powder at temperatures of approx. 1200 ° C.
  • the powder particles are essentially spherical trained and each consist of a variety of Grains, which are in the manner of the casing sections of a football casing adjoin.
  • Each of the grains of a powder particle consists of ZnO, which is known to contain Bi, Sb, Mn, and / or further elements and electrical current leads well. Are between adjacent grains electrically insulating grain boundaries, which when a Voltage of about 3 volts become electrically conductive. Depending on Leave selection of dopants and type of manufacturing process powder particles are thus produced, which are present when Voltages between 3 and 200 volts electrically conductive and are electrically non-conductive below this voltage.
  • the Powder particles therefore have an external electrical Field nonlinear, primarily due to the grain boundaries certain behavior. Instead of spherical shape, the Powder particles also have a needle or plate shape and can be compact or hollow depending on the manufacturing conditions be trained.
  • a varistor containing 25 parts by volume of doped ZnO has the current-voltage characteristic I shown in FIG. 1.
  • the varistor behaves essentially like a conventional varistor based on a sintered ceramic and has a highly non-linear dependence of the current I it carries on the applied voltage E.
  • the current is conducted in percolating paths formed by powder particles.
  • the critical current I c the polymer matrix is heated to temperatures higher than the melting temperature of polyethylene. The polymer matrix expands and breaks the current-carrying paths.
  • the varistor now goes back to a high-resistance state and blocks the current.
  • a varistor with the previously Composite described as an NTC or PTC element can be used. When heated, it decreases at temperatures T between 20 and 80 ° C the specific Resistance R of the composite is nonlinear to Temperatures between 110 and 130 ° C non-linear again increase.
  • the first change in resistance by the semi-conductive zinc oxide of the filler and the second Resistance change due to the active at approx. 110 to 130 ° C Polymer matrix can be used.
  • particles of shell-core structure are used as fillers.
  • One of these fillers contains cores made of conductive material, such as in particular V 2 O 3 , and shells made of an oxide, such as especially VO 2 or V 2 O 5 . If such fillers with a volume fraction of typically 20 to 50 percent by volume are embedded in a passive matrix, for example a thermoset based on epoxy, then such a composite material can advantageously be used as a resistance body of a varistor.
  • the current-voltage characteristic of a varistor with a resistance body based on an epoxy matrix and a core made of filler containing V 2 O 3 and shells made of VO 2 is shown in FIG. 1 and identified by the reference symbol II.
  • the filler contains cores made of doped BaTiO 3 instead of the cores made of V 2 O 3 .
  • the shells are advantageously formed from BaO, BaS, BaSO 4 , V 2 O 3 , VO 2 or TiO 2 . Since BaTiO 3 at a predetermined limit temperature due to a change in structure a substantially stronger PTC effect such a varistor causes as V 2 O 3, limits the performance significantly stronger than the varistor described above. This can be seen from its characteristic curve from FIG. 1, designated by the reference symbol III.
  • the composite material is used as a resistance body of a PTC resistor.
  • the composite material contains an active polymer, such as preferably polyethylene, and a filler with a core-shell structure. Both the cores and the shells are made of electrically conductive material. The material is selected in such a way that the cores and / or the shells undergo a structural change when one or more physical variables are involved.
  • the shells are preferably made of a material with good electrical conductivity, such as TiB 2 , TiC or a metal.
  • the cores preferably contain V 2 O 3 or BaTiO 3 , each in doped form.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Thermistors And Varistors (AREA)
EP94115003A 1993-10-15 1994-09-23 Verbundwerkstoff Expired - Lifetime EP0649150B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH3124/93 1993-10-15
CH312493 1993-10-15

Publications (2)

Publication Number Publication Date
EP0649150A1 EP0649150A1 (de) 1995-04-19
EP0649150B1 true EP0649150B1 (de) 1998-06-24

Family

ID=4249125

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94115003A Expired - Lifetime EP0649150B1 (de) 1993-10-15 1994-09-23 Verbundwerkstoff

Country Status (4)

Country Link
US (1) US5858533A (ja)
EP (1) EP0649150B1 (ja)
JP (1) JP3628049B2 (ja)
DE (1) DE59406312D1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7843308B2 (en) 2002-04-08 2010-11-30 Littlefuse, Inc. Direct application voltage variable material
US8574358B2 (en) 2005-12-06 2013-11-05 James Hardie Technology Limited Geopolymeric particles, fibers, shaped articles and methods of manufacture

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232866B1 (en) 1995-09-20 2001-05-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Composite material switches
DE19754976A1 (de) * 1997-12-11 1999-06-17 Abb Research Ltd Schutzelement
US6642297B1 (en) * 1998-01-16 2003-11-04 Littelfuse, Inc. Polymer composite materials for electrostatic discharge protection
DE19821239C5 (de) * 1998-05-12 2006-01-05 Epcos Ag Verbundwerkstoff zur Ableitung von Überspannungsimpulsen und Verfahren zu seiner Herstellung
IL128432A0 (en) * 1999-02-09 2000-01-31 Do Coop Technologies Ltd Materials and composites activable into a state of enhanced conductivity
DE19945426C1 (de) * 1999-09-22 2001-01-18 Siemens Ag Steckverbinder eines elektrischen Geräts
JP2001167904A (ja) * 1999-12-09 2001-06-22 Murata Mfg Co Ltd 半導体磁器およびそれを用いた電子部品
EP1168378A1 (en) * 2000-06-19 2002-01-02 Abb Research Ltd. Method of producing a PTC-resistor device
US7030435B2 (en) * 2000-08-24 2006-04-18 Cova Technologies, Inc. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
KR20020068198A (ko) * 2001-02-20 2002-08-27 엘지전선 주식회사 2중 전도성 복합체를 함유한 전기소자
US20020164850A1 (en) 2001-03-02 2002-11-07 Gnadinger Alfred P. Single transistor rare earth manganite ferroelectric nonvolatile memory cell
DE50115800D1 (de) * 2001-07-02 2011-04-07 Abb Schweiz Ag Polymercompound mit nichtlinearer Strom-Spannungs-Kennlinie und Verfahren zur Herstellung eines Polymercompounds
US7258819B2 (en) 2001-10-11 2007-08-21 Littelfuse, Inc. Voltage variable substrate material
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6714435B1 (en) * 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
DE10251583A1 (de) * 2002-11-06 2004-05-19 Philips Intellectual Property & Standards Gmbh Anzeigevorrichtung mit Varistorschicht
JP2006511973A (ja) * 2002-12-19 2006-04-06 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 相変化材料および並列ヒータを有する電子デバイス
US20060258327A1 (en) * 2005-05-11 2006-11-16 Baik-Woo Lee Organic based dielectric materials and methods for minaturized RF components, and low temperature coefficient of permittivity composite devices having tailored filler materials
US7271369B2 (en) * 2005-08-26 2007-09-18 Aem, Inc. Multilayer positive temperature coefficient device and method of making the same
US8728354B2 (en) * 2006-11-20 2014-05-20 Sabic Innovative Plastics Ip B.V. Electrically conducting compositions
US20090050856A1 (en) * 2007-08-20 2009-02-26 Lex Kosowsky Voltage switchable dielectric material incorporating modified high aspect ratio particles
DE102008009817A1 (de) * 2008-02-19 2009-08-27 Epcos Ag Verbundwerkstoff zur Temperaturmessung, Temperatursensor aufweisend den Verbundwerkstoff und Verfahren zur Herstellung des Verbundwerkstoffs und des Temperatursensors
US9390857B2 (en) * 2008-09-30 2016-07-12 General Electric Company Film capacitor
EP2330648A1 (de) * 2009-12-04 2011-06-08 Bayer MaterialScience AG Piezoelektrisches Polymerfilmelement, insbesondere Polymerfolie und Verfahren zu dessen Herstellung
CN101887960B (zh) * 2010-07-13 2015-07-29 清华大学 锂离子电池极耳及具有该极耳的锂离子电池
DE102011050567A1 (de) 2011-05-23 2012-11-29 Kurt Stimpfl Steckverbinder und seine Verwendung zum Schutz eines elektrischen Systems gegen Überspannungsentladung sowie Verfahren zu seiner Herstellung
CN103325508B (zh) * 2013-05-21 2016-02-10 京东方科技集团股份有限公司 变阻器及其制作方法
US20170176261A1 (en) * 2015-12-17 2017-06-22 Alexander Raymond KING Sensing element and sensing process

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549294B2 (ja) * 1972-02-16 1979-04-23
US3764529A (en) * 1972-02-17 1973-10-09 Matsushita Electric Ind Co Ltd Method of manufacturing fine grain ceramic barium titanate
US3805022A (en) * 1972-10-10 1974-04-16 Texas Instruments Inc Semiconducting threshold heaters
US4534889A (en) * 1976-10-15 1985-08-13 Raychem Corporation PTC Compositions and devices comprising them
US4271446A (en) * 1977-06-27 1981-06-02 Comstock Wilford K Transient voltage suppression system
US4152743A (en) * 1977-06-27 1979-05-01 Comstock Wilford K Transient voltage suppression system
JPS56169316A (en) * 1980-05-30 1981-12-26 Matsushita Electric Ind Co Ltd Composition functional element and method of producing same
US4347539A (en) * 1981-06-03 1982-08-31 Westinghouse Electric Corp. Electrical equipment protective apparatus with energy balancing among parallel varistors
US5064997A (en) * 1984-07-10 1991-11-12 Raychem Corporation Composite circuit protection devices
US4780598A (en) * 1984-07-10 1988-10-25 Raychem Corporation Composite circuit protection devices
US4583146A (en) * 1984-10-29 1986-04-15 General Electric Company Fault current interrupter
US4636378A (en) * 1985-06-11 1987-01-13 Hughes Aircraft Company Method of preparation of perovskite-type compounds
US4726991A (en) * 1986-07-10 1988-02-23 Eos Technologies Inc. Electrical overstress protection material and process
JPH0777161B2 (ja) * 1986-10-24 1995-08-16 日本メクトロン株式会社 Ptc組成物、その製造法およびptc素子
US5068634A (en) * 1988-01-11 1991-11-26 Electromer Corporation Overvoltage protection device and material
DE3823698A1 (de) * 1988-07-13 1990-01-18 Philips Patentverwaltung Nichtlinearer spannungsabhaengiger widerstand
CA2015812A1 (en) * 1989-05-02 1990-11-02 Shiro Nakayama Piezoelectric acceleration sensor and piezoelectric acceleration sensor device
DE4142523A1 (de) * 1991-12-21 1993-06-24 Asea Brown Boveri Widerstand mit ptc - verhalten
US5294374A (en) * 1992-03-20 1994-03-15 Leviton Manufacturing Co., Inc. Electrical overstress materials and method of manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7843308B2 (en) 2002-04-08 2010-11-30 Littlefuse, Inc. Direct application voltage variable material
US8574358B2 (en) 2005-12-06 2013-11-05 James Hardie Technology Limited Geopolymeric particles, fibers, shaped articles and methods of manufacture

Also Published As

Publication number Publication date
DE59406312D1 (de) 1998-07-30
JPH07169607A (ja) 1995-07-04
US5858533A (en) 1999-01-12
EP0649150A1 (de) 1995-04-19
JP3628049B2 (ja) 2005-03-09

Similar Documents

Publication Publication Date Title
EP0649150B1 (de) Verbundwerkstoff
EP0640995B1 (de) Elektrisches Widerstandselement und Verwendung dieses Widerstandselementes in einem Strombegrenzer
EP0590347B1 (de) Widerstand mit PTC-Verhalten
DE68907905T2 (de) Heizelement und verfahren zur herstellung eines heizelementes.
DE69103135T2 (de) Vorrichtung zum motor- und kurzschlussschutz.
EP1274102B1 (de) Polymercompound mit nichtlinearer Strom-Spannungs-Kennlinie und Verfahren zur Herstellung eines Polymercompounds
DE2948281C2 (de) Elektrische Schaltung und Schaltungsschutzeinrichtung
EP0576836B1 (de) Strombegrenzendes Element
DE2235783C2 (de) Metalloxid-Varistorelement
EP0548606A2 (de) Widerstand mit PTC - Verhalten
WO1999056290A1 (de) Nichtlinearer widerstand mit varistorverhalten und verfahren zur herstellung dieses widerstands
EP2488468B1 (de) Widerstandsbauelement umfassend ein keramikmaterial
DE1646988B2 (de) Verfahren zum herstellen polykristalliner scheiben-, stabrohr- oder folienfoermiger keramischer kaltleiter- bzw. dielektrikums- bzw. heissleiterkoerper
DE2459664A1 (de) Kaltleiterbindungsvorrichtung
DE2247643C2 (de) Varistor mit mindestens drei Elektroden
DE2453065C2 (de) Varistor und Verfahren zu seiner Herstellung
DE2809449A1 (de) Heizelement
DE3887731T2 (de) Material für Widerstände und daraus hergestellter nichtlinearer Widerstand.
DE2826485A1 (de) Organische, auf waerme ansprechende, halbleitende feste loesungen
DE19818375A1 (de) PTCR-Widerstand
DE2941196C2 (ja)
EP0040881B1 (de) Spannungsabhängiger Widerstand und Verfahren zu seiner Herstellung
WO2010015525A1 (de) Heizungsvorrichtung und verfahren zur herstellung der heizungsvorrichtung
DE2342172A1 (de) Widerstaende mit nichtlinearer stromspannungskennlinie
DE10315220A1 (de) Dickschichtpaste zur Herstellung von elektrischen Bauteilen

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): CH DE FR IT LI SE

17P Request for examination filed

Effective date: 19950916

17Q First examination report despatched

Effective date: 19961113

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): CH DE FR IT LI SE

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REF Corresponds to:

Ref document number: 59406312

Country of ref document: DE

Date of ref document: 19980730

ITF It: translation for a ep patent filed

Owner name: DE DOMINICIS & MAYER S.R.L.

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 20060914

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20060930

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20060914

Year of fee payment: 13

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070924

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

EUG Se: european patent has lapsed
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070930

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070930

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070923

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20120921

Year of fee payment: 19

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20121010

Year of fee payment: 19

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 59406312

Country of ref document: DE

Effective date: 20140401

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20140530

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130930

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140401