Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D1/00—Resistors, capacitors or inductors
  • H10D1/01—Manufacture or treatment
  • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
  • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
  • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
  • H10B12/03—Making the capacitor or connections thereto
  • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
  • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
  • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
  • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D1/00—Resistors, capacitors or inductors
  • H10D1/60—Capacitors
  • H10D1/68—Capacitors having no potential barriers
  • H10D1/692—Electrodes
  • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
  • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Definitions

• the invention relates to a manufacturing method for a capacitor of a semiconductor circuit, the lower capacitor plate being designed as a bowl.
• Such a bowl capacitor is used in particular in DRAM semiconductor memories with so-called “stacked capacitor” or “stacked capacitor above bitline” memory cells, in which the capacitor is arranged above the transistor or additionally above the bit line .
• the latter cell concept has the basic advantage that the available cell area can be optimally used for the capacitor, but with increasing reduction it is no longer sufficient for a planar capacitor with sufficient capacitance.
• the object of the present invention is to specify a production method for a bowl capacitor, in particular for memory cells of the stacked-capacitor type or of the stacked-capacitor-above-bitline type.
• the process should be simple to carry out and should have a high level of process reliability.
• the bowl capacitors produced in this way should have a high electrical reliability and enable global planarization of the semiconductor circuit containing the capacitors. This object is achieved by a manufacturing method according to claim 1. Further developments are the subject of subclaims.
• the invention is based on the use of a grinding process (so-called chemical mechanical polishing, CMP) in the production of the lower capacitor electrode.
• CMP can be used with various materials and is described in the article W.J. Patrick et al., In J. Electrochem. Soc. Vol. 138 No 6, June 91, p. 1778 described in more detail. So far, however, it has preferably been used for multi-layer wiring of integrated circuits (see e.g. R. Utrecnt et al., VMIC Conference 1991, p. 144).
• the use in the manufacture of a bowl condenser is not known.
• the invention is particularly applicable to
• CMP enables a long-range, ie global, planarization of the surface with very low remaining levels (maximum about 100 n).
• selectivity between different materials can be achieved be achieved.
• a sensible use of a CMP step in many cases requires that the surface is sufficiently well planarized before the process. Further details are explained in the aforementioned German patent applications by the same inventors.
• FIG. 1 shows a cross section through a section of cell field (Z) and periphery (P) after carrying out the method according to the invention.
• Figures 2 to 5 shows a partial cross section through the semiconductor substrate in the cell field, on which the method steps of an embodiment of the
• FIG. 1 A DRAM memory arrangement is shown as an example of a semiconductor circuit, specifically a cross section through two adjacent memory cells (Z) parallel to the active area and through a typical peripheral circuit (P), the memory arrangement excepting the origin ⁇ position of wiring levels is completed.
• Isolation regions 2 are arranged in a semiconductor substrate 1, which isolate different memory cells from one another.
• the semiconductor substrate 1 furthermore contains doped regions 3, 4, 5 as source or drain (3, 4) of transistors in the cell field or in the periphery or as connection (5) of the semiconductor substrate 1.
• a transistor bit line pillar 8 (TB pillar) connects the drain region of the transistor to an overlying bit line 10
• TK pillar transistor stor capacitor pillar 9
• Source region 3 with a lower capacitor plate 11. Further pillars are provided in the periphery, the interconnects 12 lying in the bit line plane with the doped substrate region 5 (SB pillar 13) or with the conductive one
• the pillars 8, 9, 13, 14, bit line 10 and interconnects 12 are arranged in a first insulating layer 15. It is advantageous if the first insulating layer 15 has a globally planarized surface which is at the same height as the upper edge of the TC pillars 9. All conductive structures 8, 10, 12, 13, 14 with the exception of the TK pillars 9 are embedded in the first insulating layer 15, i. H. insulated on all sides and especially upwards.
• the TK pillars extend to the surface of layer 15.
• the pillars are made of a suitable conductive material, e.g. B. doped polysilicon or a metal, e.g. B. Tungsten.
• the TK pillars preferably consist of doped polysilicon in order to achieve low contact resistances between the pillar and the capacitor.
• Metallic pillars are possible if the subsequent process sequence is coordinated with them.
• a contact layer (eg Ti) and a diffusion barrier (eg TiN) may then be required between the capacitor material and metal (eg layer 40 as a TiN / Ti layer), the properties of which must be taken into account .
• the capacitor can also consist of a metal, so that a TiN / Ti layer is not necessary.
• the capacitor consists of the lower capacitor electrode 11 in the form of a bowl, which preferably has internal fins 46, and a counterplate 16 which is common to all storage cells and which is separated from the lower capacitor electrode 11 by a dielectric 47 is isolated.
• the invention provides that the upper edges of the lower capacitor electrode 11 (ie the bowl edge and the lamellae) are at the same level by using a CMP cut and that the upper edges of the lower capacitor electrodes of all memory cells of the semiconductor memory provide global planarization exhibit.
• a second insulating layer 17 covers the counterplate 16 in the cell array Z or the first insulating layer 15 in the periphery P.
• contact holes 18, 19, referred to as vias are arranged, via which the counterplate 16 or the interconnect 12 of the bit line level (and thus the semiconductor substrate or the word line level) can be connected.
• FIG. 2 The manufacturing method according to the invention is based on the first insulating layer 15 as the substrate 15, which contains the TK pillar 9 as a connection 9 for the lower capacitor electrode 11 to be formed.
• a thin, (for example 30 nm), electrically conductive intermediate layer 40 can first be applied over the entire surface. If the TK pillar consists of doped polysilicon, the material of layer 40 is preferably also doped polysilicon.
• An auxiliary layer 41 preferably silicon oxide approximately 500-1000 nm thick, is then deposited over the entire surface. Holes 43 are etched into the auxiliary layer 41 with the aid of a photo technique (resist mask 42) at the points where a capacitor is later to be created. The etching may stop on the intermediate layer 40.
• an isotropic oxide etching is carried out to widen the hole 43 before removing the resist mask 42. If no intermediate layer 40 is used, it must be ensured that that each hole 43 opens at least partially a TK pillar.
• FIG. 3 A conductive layer 44, preferably polysilicon of approximately 100 to 200 nm thick, is deposited over the entire surface, so that it forms a bowl in hole 43. Using known methods, a spacer 45 approx. 100 to 200 nm thick is formed on the bowl walls, e.g. made of silicon oxide. These two process steps can be repeated until the hole is filled; in the exemplary embodiment, only one doped polysilicon layer 46 is deposited for filling.
• Figure 4 According to the invention, the polysilicon 46, 44 on the horizontal surface outside the holes 43 is now removed in a CMP step. Vertical polysilicon lamellae 46 remain in the bowl and are separated from one another and from the edge of the bowl 44 by the spacers 45. The lower capacitor electrode 11 is formed by the bowl 44, the fins 46 and possibly parts of the intermediate layer 40.
• FIG. 5 The auxiliary layer 41 and the spacers 45 are removed, preferably together.
• the etching must be selective to the polysilicon 44, 46 and optionally to the intermediate layer 40 and can be, for example, wet etching.
• the intermediate layer which may have been initially applied is etched through at the exposed locations to separate adjacent capacitors from one another and a capacitor dielectric 47 is applied. Since the intermediate layer 40 is very thin, the removal of the bowl and the lamellae is slight with this etching. Finally, the counter plate 16 is separated and structured, and the capacitor dielectric 47 in the periphery can also be removed.
• the polysilicon 46, 44 on the planar surface is not removed by an etching but by a CMP step.
• the upper edges of the lower capacitor electrode 11 (ie the upper edge of the "bowl edge” formed from the polysilicon layer 44 and the upper edges of the lamellae 46 lying in the bowl) thus have essentially the same height.
• the advantage is that the capacitors have a have planar top surfaces which are well defined in terms of height, as a result of which a later global planarization of the entire semiconductor circuit (here, therefore, of the cell field and periphery) is considerably simplified.
• Polysilicon can be ground with high selectivity against oxide in the CMP process, so that the oxide 41 can be stopped without problems. Furthermore, the auxiliary layer is at this point all the way down to the holes 43, i.e. especially in the periphery outside the cell field. There is therefore no danger that capacitors at the edge of the cell field will be too deeply ground or damaged by the influence of an adjacent topography stage. A later global planarization of the entire circuit and the production of vias 18, 19 is supported by a global planar background 15; this is explained in detail in the aforementioned German patent application by the same inventors.
• the counter plate 16 is preferably to be deposited so thick that all the gaps between the polysilicon lamellae of a capacitor and between adjacent lower capacitor electrodes are filled. This is also simplified if the gap between the capacitor is narrowed by the isotropic oxide etching mentioned.
• the thickness of the counter plate 48 can be reduced, which reduces the overall height of the capacitors and facilitates the planarization.
• the oxide layer 41 is only recognizable as an auxiliary layer, which, like the spacer 45, is removed again later.
• These two structures 41, 45 can therefore consist of other materials that meet the conditions explained above. They are preferably made of the same material so that they can be removed together.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Semiconductor Memories (AREA)
• Semiconductor Integrated Circuits (AREA)

Applications Claiming Priority (3)

Publications (1)

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ID=6462140

Family Applications (1)

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• 1992
  • 1992-06-30 DE DE4221431A patent/DE4221431A1/de not_active Withdrawn
• 1993
  • 1993-06-12 TW TW082104683A patent/TW230844B/zh active
  • 1993-06-24 WO PCT/DE1993/000551 patent/WO1994000874A1/de not_active Application Discontinuation
  • 1993-06-24 JP JP6501947A patent/JPH07508136A/ja active Pending
  • 1993-06-24 EP EP93912618A patent/EP0647356A1/de not_active Withdrawn
• 1994
  • 1994-12-30 KR KR1019940704838A patent/KR950702339A/ko not_active Abandoned

Non-Patent Citations (1)

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