KR950702339A - 크라운 캐패시터용 제조방법 및 장치(process for producing a dish capacitor) - Google Patents
크라운 캐패시터용 제조방법 및 장치(process for producing a dish capacitor)Info
- Publication number
- KR950702339A KR950702339A KR1019940704838A KR19940704838A KR950702339A KR 950702339 A KR950702339 A KR 950702339A KR 1019940704838 A KR1019940704838 A KR 1019940704838A KR 19940704838 A KR19940704838 A KR 19940704838A KR 950702339 A KR950702339 A KR 950702339A
- Authority
- KR
- South Korea
- Prior art keywords
- producing
- manufacturing
- crown capacitors
- dish
- capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4221431A DE4221431A1 (de) | 1992-06-30 | 1992-06-30 | Herstellverfahren für einen Schlüsselkondensator |
| PCT/DE1993/000551 WO1994000874A1 (de) | 1992-06-30 | 1993-06-24 | Herstellungsverfahren für einen schüsselkondensator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950702339A true KR950702339A (ko) | 1995-06-19 |
Family
ID=6462140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940704838A KR950702339A (ko) | 1992-06-30 | 1994-12-30 | 크라운 캐패시터용 제조방법 및 장치(process for producing a dish capacitor) |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0647356A1 (ko) |
| JP (1) | JPH07508136A (ko) |
| KR (1) | KR950702339A (ko) |
| DE (1) | DE4221431A1 (ko) |
| TW (1) | TW230844B (ko) |
| WO (1) | WO1994000874A1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714779A (en) * | 1992-06-30 | 1998-02-03 | Siemens Aktiengesellschaft | Semiconductor memory device having a transistor, a bit line, a word line and a stacked capacitor |
| DE4221432C2 (de) * | 1992-06-30 | 1994-06-09 | Siemens Ag | Globales Planarisierungsverfahren für integrierte Halbleiterschaltungen oder mikromechanische Bauteile |
| KR950021710A (ko) * | 1993-12-01 | 1995-07-26 | 김주용 | 반도체 장치의 캐패시터 제조방법 |
| US5840623A (en) * | 1995-10-04 | 1998-11-24 | Advanced Micro Devices, Inc. | Efficient and economical method of planarization of multilevel metallization structures in integrated circuits using CMP |
| JPH10144882A (ja) * | 1996-11-13 | 1998-05-29 | Oki Electric Ind Co Ltd | 半導体記憶素子のキャパシタ及びその製造方法 |
| WO1998028789A1 (fr) * | 1996-12-20 | 1998-07-02 | Hitachi, Ltd. | Dispositif memoire a semi-conducteur et procede de fabrication associe |
| GB2322964B (en) * | 1997-03-07 | 2001-10-17 | United Microelectronics Corp | Polysilicon CMP process for high-density DRAM cell structures |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2524862B2 (ja) * | 1990-05-01 | 1996-08-14 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| US5162248A (en) * | 1992-03-13 | 1992-11-10 | Micron Technology, Inc. | Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing |
-
1992
- 1992-06-30 DE DE4221431A patent/DE4221431A1/de not_active Withdrawn
-
1993
- 1993-06-12 TW TW082104683A patent/TW230844B/zh active
- 1993-06-24 JP JP6501947A patent/JPH07508136A/ja active Pending
- 1993-06-24 EP EP93912618A patent/EP0647356A1/de not_active Withdrawn
- 1993-06-24 WO PCT/DE1993/000551 patent/WO1994000874A1/de not_active Application Discontinuation
-
1994
- 1994-12-30 KR KR1019940704838A patent/KR950702339A/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07508136A (ja) | 1995-09-07 |
| EP0647356A1 (de) | 1995-04-12 |
| DE4221431A1 (de) | 1994-01-05 |
| WO1994000874A1 (de) | 1994-01-06 |
| TW230844B (ko) | 1994-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2250377B (en) | Method for manufacturing a semiconductor device with villus-type capacitor | |
| DE69323978D1 (de) | Herstellungsverfahren eines Leiterrahmens | |
| KR970005727B1 (en) | Method for manufacturing capacitor element in super-lsi | |
| EP0543616A3 (en) | A capacitor and method for making a capacitor | |
| GB2219287B (en) | A method for manufacturing a reduction-reoxidation type semiconductive capacitor | |
| GB2197534B (en) | Capacitance element for a semiconductor device and method of manufacturing the same | |
| KR960016838B1 (en) | Method of manufacturing a capacitor node for semiconductor memory device | |
| GB8928333D0 (en) | Method of fabricating multilayer capacitor | |
| KR890015430A (ko) | 캐패시터 및 그 제조방법 | |
| EP0416926A3 (en) | Method for manufacturing a solid electrolytic capacitor | |
| EP0405659A3 (en) | A method of manufacturing a semiconductor device | |
| EP0452955A3 (en) | Capacitor and process for production thereof | |
| EP0372476A3 (en) | Semiconductor device having a reduced parasitic capacitance and manufacturing method thereof | |
| GB2307789B (en) | Method for fabricating a capacitor of a semiconductor device and the structure of the same | |
| FI970543A (fi) | Menetelmä piikondensaattorin valmistamiseksi | |
| EP0444214A4 (en) | Film capacitor and its manufacturing method | |
| SG43381A1 (en) | Capacitor in a semiconductor arrangement and method for its production | |
| KR950702339A (ko) | 크라운 캐패시터용 제조방법 및 장치(process for producing a dish capacitor) | |
| GB2230899B (en) | A production method of a semiconductor device | |
| KR900015198A (ko) | 캐패시터 및 그의 제조방법 | |
| DE69300518D1 (de) | Herstellungsverfahren eines keramischen Vielschichtkondensators. | |
| EP0436224A3 (en) | Solid electrolytic capacitor and a method of producing the same | |
| GB2221572B (en) | Lead type chip capacitor and process for producing the same | |
| EP0460763A3 (en) | Method of manufacturing a superconductor device | |
| GB2242784B (en) | Method for manufacturing multilayer ceramic capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| NORF | Unpaid initial registration fee |