FI970543A - Menetelmä piikondensaattorin valmistamiseksi - Google Patents

Menetelmä piikondensaattorin valmistamiseksi Download PDF

Info

Publication number
FI970543A
FI970543A FI970543A FI970543A FI970543A FI 970543 A FI970543 A FI 970543A FI 970543 A FI970543 A FI 970543A FI 970543 A FI970543 A FI 970543A FI 970543 A FI970543 A FI 970543A
Authority
FI
Finland
Prior art keywords
silicone
capacitor
producing
silicone capacitor
Prior art date
Application number
FI970543A
Other languages
English (en)
Swedish (sv)
Other versions
FI970543A0 (fi
Inventor
Josef Willer
Hermann Wendt
Herbert Schaefer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of FI970543A0 publication Critical patent/FI970543A0/fi
Publication of FI970543A publication Critical patent/FI970543A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FI970543A 1994-08-09 1997-02-07 Menetelmä piikondensaattorin valmistamiseksi FI970543A (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4428195A DE4428195C1 (de) 1994-08-09 1994-08-09 Verfahren zur Herstellung eines Siliziumkondensators
PCT/DE1995/001036 WO1996005620A1 (de) 1994-08-09 1995-08-07 Verfahren zur herstellung eines siliziumkondensators

Publications (2)

Publication Number Publication Date
FI970543A0 FI970543A0 (fi) 1997-02-07
FI970543A true FI970543A (fi) 1997-02-07

Family

ID=6525268

Family Applications (1)

Application Number Title Priority Date Filing Date
FI970543A FI970543A (fi) 1994-08-09 1997-02-07 Menetelmä piikondensaattorin valmistamiseksi

Country Status (7)

Country Link
US (1) US5866452A (fi)
EP (1) EP0775370A1 (fi)
JP (1) JPH10503886A (fi)
KR (1) KR970705174A (fi)
DE (1) DE4428195C1 (fi)
FI (1) FI970543A (fi)
WO (1) WO1996005620A1 (fi)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19701935C1 (de) * 1997-01-21 1997-12-11 Siemens Ag Verfahren zur Herstellung eines Siliziumkondensators
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur
US6100132A (en) * 1997-06-30 2000-08-08 Kabushiki Kaisha Toshiba Method of deforming a trench by a thermal treatment
US6384466B1 (en) * 1998-08-27 2002-05-07 Micron Technology, Inc. Multi-layer dielectric and method of forming same
DE10120053A1 (de) * 2001-04-24 2002-11-14 Infineon Technologies Ag Stressreduziertes Schichtsystem
US6797992B2 (en) * 2001-08-07 2004-09-28 Fabtech, Inc. Apparatus and method for fabricating a high reverse voltage semiconductor device
DE10158798A1 (de) * 2001-11-30 2003-06-18 Infineon Technologies Ag Kondensator und Verfahren zum Herstellen eines Kondensators
DE10162900C1 (de) * 2001-12-20 2003-07-31 Infineon Technologies Ag Verfahren zur Herstellung niederohmiger Elektroden in Grabenkondensatoren
US6984860B2 (en) * 2002-11-27 2006-01-10 Semiconductor Components Industries, L.L.C. Semiconductor device with high frequency parallel plate trench capacitor structure
DE102005030638A1 (de) * 2005-06-30 2007-01-11 Infineon Technologies Ag Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung
US8558964B2 (en) * 2007-02-15 2013-10-15 Baxter International Inc. Dialysis system having display with electromagnetic compliance (“EMC”) seal
US7670931B2 (en) * 2007-05-15 2010-03-02 Novellus Systems, Inc. Methods for fabricating semiconductor structures with backside stress layers
US8502340B2 (en) 2010-12-09 2013-08-06 Tessera, Inc. High density three-dimensional integrated capacitors
US8742541B2 (en) * 2010-12-09 2014-06-03 Tessera, Inc. High density three-dimensional integrated capacitors
US8487405B2 (en) 2011-02-17 2013-07-16 Maxim Integrated Products, Inc. Deep trench capacitor with conformally-deposited conductive layers having compressive stress
US8592883B2 (en) * 2011-09-15 2013-11-26 Infineon Technologies Ag Semiconductor structure and method for making same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4889492A (en) * 1986-05-07 1989-12-26 Motorola, Inc. High capacitance trench capacitor and well extension process
US4782036A (en) * 1986-08-29 1988-11-01 Siemens Aktiengesellschaft Process for producing a predetermined doping in side walls and bases of trenches etched into semiconductor substrates
US5354710A (en) * 1988-01-14 1994-10-11 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices using an adsorption enhancement layer
RU2082258C1 (ru) * 1991-08-14 1997-06-20 Сименс АГ Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления
DE4418430C1 (de) * 1994-05-26 1995-05-11 Siemens Ag Verfahren zur Herstellung eines Siliziumkondensators

Also Published As

Publication number Publication date
US5866452A (en) 1999-02-02
WO1996005620A1 (de) 1996-02-22
JPH10503886A (ja) 1998-04-07
FI970543A0 (fi) 1997-02-07
EP0775370A1 (de) 1997-05-28
KR970705174A (ko) 1997-09-06
DE4428195C1 (de) 1995-04-20

Similar Documents

Publication Publication Date Title
FI971812A (fi) Menetelmä yhdistekokoelman valmistamiseksi
DE69631903D1 (de) Diskreter gegenstromchromatographieprozess
FI920072A (fi) Menetelmä selluloosamuotokappaleen valmistamiseksi
FI954863A0 (fi) Parannettu menetelmä polymeerien muodostamiseksi
FI970102A0 (fi) Menetelmä substiuoitujen sulfoksidien syntetisoimiseksi
FI971028A (fi) Menetelmä kumiperustan valmistamiseksi
NO307935B1 (no) FremgangsmÕte for fremstilling av en polyester-kopolymer
FI970543A0 (fi) Menetelmä piikondensaattorin valmistamiseksi
FI960145A (fi) Menetelmä sellun valmistamiseksi
NO933788L (no) Fremgangsmåte for fremstilling av et naturlig ökosystem
FI952719A0 (fi) Menetelmä puolijohdelaitteen valmistamiseksi
FI915591A0 (fi) Menetelmä paperimassan valmistamiseksi
NO964154D0 (no) Fremgangsmåte for fremstilling av en konstruksjonsdel
FI943549A0 (fi) Parannettu menetelmä paperin valmistamiseksi
NO952209L (no) Fremgangsmåte for fremstilling av et plaströr
DE69516097D1 (de) Ein Beschichtungsverfahren
FI951081A0 (fi) Menetelmä päällystetyn paperin valmistamiseksi
EP0684618A3 (de) Verfahren zur Herstellung eines Siliziumkondensators.
FI104248B1 (fi) Menetelmä nikkelihydroksidin valmistamiseksi
FI963018A0 (fi) Menetelmä gammapyronien valmistamiseksi
MD254B1 (ro) Procedeu de cultivare a marului
FI944460A0 (fi) Menetelmä lääkepreparaatin valmistamiseksi
FI972694A (fi) Uusi menetelmä sameridiinin valmistamiseksi
FI962293A0 (fi) Menetelmä kondensaattorin valmistamiseksi ja näin aikaansaatu kondensaattori
GB2290878B (en) A photographic production method