FI970543A0 - Menetelmä piikondensaattorin valmistamiseksi - Google Patents

Menetelmä piikondensaattorin valmistamiseksi

Info

Publication number
FI970543A0
FI970543A0 FI970543A FI970543A FI970543A0 FI 970543 A0 FI970543 A0 FI 970543A0 FI 970543 A FI970543 A FI 970543A FI 970543 A FI970543 A FI 970543A FI 970543 A0 FI970543 A0 FI 970543A0
Authority
FI
Finland
Prior art keywords
silicone
capacitor
producing
silicone capacitor
Prior art date
Application number
FI970543A
Other languages
English (en)
Swedish (sv)
Other versions
FI970543A (fi
Inventor
Josef Willer
Hermann Wendt
Herbert Schaefer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of FI970543A0 publication Critical patent/FI970543A0/fi
Publication of FI970543A publication Critical patent/FI970543A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FI970543A 1994-08-09 1997-02-07 Menetelmä piikondensaattorin valmistamiseksi FI970543A (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4428195A DE4428195C1 (de) 1994-08-09 1994-08-09 Verfahren zur Herstellung eines Siliziumkondensators
PCT/DE1995/001036 WO1996005620A1 (de) 1994-08-09 1995-08-07 Verfahren zur herstellung eines siliziumkondensators

Publications (2)

Publication Number Publication Date
FI970543A0 true FI970543A0 (fi) 1997-02-07
FI970543A FI970543A (fi) 1997-02-07

Family

ID=6525268

Family Applications (1)

Application Number Title Priority Date Filing Date
FI970543A FI970543A (fi) 1994-08-09 1997-02-07 Menetelmä piikondensaattorin valmistamiseksi

Country Status (7)

Country Link
US (1) US5866452A (fi)
EP (1) EP0775370A1 (fi)
JP (1) JPH10503886A (fi)
KR (1) KR970705174A (fi)
DE (1) DE4428195C1 (fi)
FI (1) FI970543A (fi)
WO (1) WO1996005620A1 (fi)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19701935C1 (de) * 1997-01-21 1997-12-11 Siemens Ag Verfahren zur Herstellung eines Siliziumkondensators
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur
US6100132A (en) * 1997-06-30 2000-08-08 Kabushiki Kaisha Toshiba Method of deforming a trench by a thermal treatment
US6384466B1 (en) * 1998-08-27 2002-05-07 Micron Technology, Inc. Multi-layer dielectric and method of forming same
DE10120053A1 (de) 2001-04-24 2002-11-14 Infineon Technologies Ag Stressreduziertes Schichtsystem
US6797992B2 (en) * 2001-08-07 2004-09-28 Fabtech, Inc. Apparatus and method for fabricating a high reverse voltage semiconductor device
DE10158798A1 (de) * 2001-11-30 2003-06-18 Infineon Technologies Ag Kondensator und Verfahren zum Herstellen eines Kondensators
DE10162900C1 (de) * 2001-12-20 2003-07-31 Infineon Technologies Ag Verfahren zur Herstellung niederohmiger Elektroden in Grabenkondensatoren
US6984860B2 (en) * 2002-11-27 2006-01-10 Semiconductor Components Industries, L.L.C. Semiconductor device with high frequency parallel plate trench capacitor structure
DE102005030638A1 (de) * 2005-06-30 2007-01-11 Infineon Technologies Ag Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung
US8558964B2 (en) * 2007-02-15 2013-10-15 Baxter International Inc. Dialysis system having display with electromagnetic compliance (“EMC”) seal
US7670931B2 (en) * 2007-05-15 2010-03-02 Novellus Systems, Inc. Methods for fabricating semiconductor structures with backside stress layers
US8502340B2 (en) 2010-12-09 2013-08-06 Tessera, Inc. High density three-dimensional integrated capacitors
US8742541B2 (en) * 2010-12-09 2014-06-03 Tessera, Inc. High density three-dimensional integrated capacitors
US8487405B2 (en) 2011-02-17 2013-07-16 Maxim Integrated Products, Inc. Deep trench capacitor with conformally-deposited conductive layers having compressive stress
US8592883B2 (en) * 2011-09-15 2013-11-26 Infineon Technologies Ag Semiconductor structure and method for making same
DE102018217001B4 (de) * 2018-10-04 2020-06-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Halbleiterkondensatoren unterschiedlicher Kapazitätswerte in einem Halbleitersubstrat

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4889492A (en) * 1986-05-07 1989-12-26 Motorola, Inc. High capacitance trench capacitor and well extension process
US4782036A (en) * 1986-08-29 1988-11-01 Siemens Aktiengesellschaft Process for producing a predetermined doping in side walls and bases of trenches etched into semiconductor substrates
US5354710A (en) * 1988-01-14 1994-10-11 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices using an adsorption enhancement layer
RU2082258C1 (ru) * 1991-08-14 1997-06-20 Сименс АГ Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления
DE4418430C1 (de) * 1994-05-26 1995-05-11 Siemens Ag Verfahren zur Herstellung eines Siliziumkondensators

Also Published As

Publication number Publication date
JPH10503886A (ja) 1998-04-07
EP0775370A1 (de) 1997-05-28
DE4428195C1 (de) 1995-04-20
KR970705174A (ko) 1997-09-06
US5866452A (en) 1999-02-02
WO1996005620A1 (de) 1996-02-22
FI970543A (fi) 1997-02-07

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