EP0570584A4 - - Google Patents

Info

Publication number
EP0570584A4
EP0570584A4 EP19920902725 EP92902725A EP0570584A4 EP 0570584 A4 EP0570584 A4 EP 0570584A4 EP 19920902725 EP19920902725 EP 19920902725 EP 92902725 A EP92902725 A EP 92902725A EP 0570584 A4 EP0570584 A4 EP 0570584A4
Authority
EP
European Patent Office
Prior art keywords
channel mos
mos transistor
channel
gates
accompanied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP19920902725
Other languages
English (en)
French (fr)
Other versions
EP0570584A1 (en
Inventor
Tadashi 5-2 Nihondaira Taihaku-Ku Shibata
Tadahiro 1-17-301 Komegabukuro 2-Chome Ohmi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03013780A external-priority patent/JP3122756B2/ja
Application filed by Individual filed Critical Individual
Publication of EP0570584A1 publication Critical patent/EP0570584A1/en
Publication of EP0570584A4 publication Critical patent/EP0570584A4/xx
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Neurology (AREA)
  • Computational Linguistics (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Data Mining & Analysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Artificial Intelligence (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
EP92902725A 1991-01-12 1992-01-13 Semiconductor device Ceased EP0570584A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP03013780A JP3122756B2 (ja) 1991-01-12 1991-01-12 半導体装置
JP13780/91 1991-01-12
JP188147/91 1991-07-02
JP18814791 1991-07-02

Publications (2)

Publication Number Publication Date
EP0570584A1 EP0570584A1 (en) 1993-11-24
EP0570584A4 true EP0570584A4 (zh) 1994-02-16

Family

ID=26349625

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92902725A Ceased EP0570584A1 (en) 1991-01-12 1992-01-13 Semiconductor device

Country Status (3)

Country Link
US (1) US5469085A (zh)
EP (1) EP0570584A1 (zh)
WO (1) WO1992012575A1 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5594372A (en) * 1989-06-02 1997-01-14 Shibata; Tadashi Source follower using NMOS and PMOS transistors
US5764081A (en) * 1991-05-17 1998-06-09 Theseus Logic, Inc. Null convention interface circuits
US5664211A (en) * 1993-06-08 1997-09-02 Theseus Research, Inc. Null convention threshold gate
US5796962A (en) * 1991-05-17 1998-08-18 Theeus Logic Null convention bus
US6020754A (en) * 1991-05-17 2000-02-01 Theseus Logic, Inc. Look up table threshold gates
US5656948A (en) * 1991-05-17 1997-08-12 Theseus Research, Inc. Null convention threshold gate
EP0584265A4 (en) * 1991-05-17 1994-05-18 Theseus Research Inc Null convention speed independent logic
US5930522A (en) * 1992-02-14 1999-07-27 Theseus Research, Inc. Invocation architecture for generally concurrent process resolution
JP3459017B2 (ja) * 1993-02-22 2003-10-20 直 柴田 半導体装置
US5652902A (en) * 1993-06-08 1997-07-29 Theseus Research, Inc. Asynchronous register for null convention logic systems
US5793662A (en) * 1993-06-08 1998-08-11 Theseus Research, Inc. Null convention adder
EP0694198A1 (en) * 1994-02-15 1996-01-31 SHIBATA, Tadashi Semiconductor device
US6327607B1 (en) 1994-08-26 2001-12-04 Theseus Research, Inc. Invocation architecture for generally concurrent process resolution
US5585744A (en) * 1995-10-13 1996-12-17 Cirrus Logic, Inc. Circuits systems and methods for reducing power loss during transfer of data across a conductive line
DE19548529C1 (de) * 1995-12-22 1997-04-03 Siemens Ag Verfahren zur Herstellung eines Neuron-MOS-Transistors auf der Basis eines CMOS-Prozesses
DE19609078C1 (de) * 1996-03-08 1997-06-05 Siemens Ag Schwellwertlogik mit verbessertem Signal-Rausch-Abstand
US5907693A (en) * 1997-09-24 1999-05-25 Theseus Logic, Inc. Autonomously cycling data processing architecture
US5986466A (en) * 1997-10-08 1999-11-16 Theseus Logic, Inc. Programmable gate array
US6031390A (en) * 1997-12-16 2000-02-29 Theseus Logic, Inc. Asynchronous registers with embedded acknowledge collection
US6262593B1 (en) 1998-01-08 2001-07-17 Theseus Logic, Inc. Semi-dynamic and dynamic threshold gates with modified pull-up structures
DE19945432A1 (de) * 1999-09-22 2001-04-12 Infineon Technologies Ag Schaltungsanordnung zum Ansteuern einer Last mit reduzierter Störabstrahlung
US6469562B1 (en) * 2000-06-26 2002-10-22 Jun-Ren Shih Source follower with Vgs compensation
JP2002217416A (ja) * 2001-01-16 2002-08-02 Hitachi Ltd 半導体装置
US6765430B2 (en) * 2002-07-22 2004-07-20 Yoshiyuki Ando Complementary source follower circuit controlled by back bias voltage
US7402869B2 (en) * 2004-09-29 2008-07-22 Agere Systems Inc Apparatus and method for breakdown protection of a source follower circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159604A (en) * 1979-05-31 1980-12-11 Mitsubishi Electric Corp Complementary type source follower
JPS6018953A (ja) * 1983-07-12 1985-01-31 Seiko Epson Corp 半導体集積回路

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52133747A (en) * 1976-04-30 1977-11-09 Nec Corp Semiconductor logic gate circuit
JPS53103371A (en) * 1977-02-22 1978-09-08 Nec Corp Field effect transistor complementary circuit
JPS5937585B2 (ja) * 1979-07-26 1984-09-11 日本電信電話株式会社 相補性ｍｉｓ論理回路
JPS57190423A (en) * 1981-05-19 1982-11-24 Toshiba Corp Semiconductor circuit
US4652773A (en) * 1982-09-30 1987-03-24 Rca Corporation Integrated circuits with electrically erasable electrically programmable latch circuits therein for controlling operation
JPS59221678A (ja) * 1983-05-31 1984-12-13 Fujitsu Ltd 半導体素子の駆動回路
KR890004211B1 (ko) * 1983-07-08 1989-10-27 후지쓰가부시끼가이샤 콤프리멘타리 로직회로
JP2564787B2 (ja) * 1983-12-23 1996-12-18 富士通株式会社 ゲートアレー大規模集積回路装置及びその製造方法
US5059835A (en) * 1987-06-04 1991-10-22 Ncr Corporation Cmos circuit with programmable input threshold
JPH01125952A (ja) * 1987-11-11 1989-05-18 Nec Corp マスタスライス集積回路
JPH01137821A (ja) * 1987-11-25 1989-05-30 Mitsubishi Electric Corp Ｃｍｏｓ出力バッファ
JPH01268313A (ja) * 1988-04-20 1989-10-26 Seiko Epson Corp 出力回路
US5036223A (en) * 1989-05-22 1991-07-30 Kabushiki Kaisha Toshiba Inverter circuit and chopper type comparator circuit using the same
JP2662559B2 (ja) * 1989-06-02 1997-10-15 直 柴田 半導体装置
JPH0435224A (ja) * 1990-05-28 1992-02-06 Nec Corp 半導体装置
JPH04192716A (ja) * 1990-11-26 1992-07-10 Mitsubishi Electric Corp Ｍｏｓトランジスタ出力回路
US5206544A (en) * 1991-04-08 1993-04-27 International Business Machines Corporation CMOS off-chip driver with reduced signal swing and reduced power supply disturbance
JP3379862B2 (ja) * 1995-06-30 2003-02-24 本多通信工業株式会社 光伝達部材における反射防止膜の形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159604A (en) * 1979-05-31 1980-12-11 Mitsubishi Electric Corp Complementary type source follower
JPS6018953A (ja) * 1983-07-12 1985-01-31 Seiko Epson Corp 半導体集積回路

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 005, no. 034 (E - 048) 4 March 1981 (1981-03-04) *
PATENT ABSTRACTS OF JAPAN vol. 009, no. 136 (E - 320) 12 June 1985 (1985-06-12) *
See also references of WO9212575A1 *

Also Published As

Publication number Publication date
US5469085A (en) 1995-11-21
EP0570584A1 (en) 1993-11-24
WO1992012575A1 (en) 1992-07-23

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