ATE254338T1 - Stromgesteuerter feldeffekttransistor - Google Patents
Stromgesteuerter feldeffekttransistorInfo
- Publication number
- ATE254338T1 ATE254338T1 AT00938019T AT00938019T ATE254338T1 AT E254338 T1 ATE254338 T1 AT E254338T1 AT 00938019 T AT00938019 T AT 00938019T AT 00938019 T AT00938019 T AT 00938019T AT E254338 T1 ATE254338 T1 AT E254338T1
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- effect transistor
- current controlled
- controlled field
- current
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 230000000295 complement effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
- Electronic Switches (AREA)
- Control Of Eletrric Generators (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13707799P | 1999-06-02 | 1999-06-02 | |
PCT/US2000/015066 WO2000074144A1 (en) | 1999-06-02 | 2000-05-31 | Current controlled field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE254338T1 true ATE254338T1 (de) | 2003-11-15 |
Family
ID=22475731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00938019T ATE254338T1 (de) | 1999-06-02 | 2000-05-31 | Stromgesteuerter feldeffekttransistor |
Country Status (8)
Country | Link |
---|---|
US (1) | US6630382B1 (de) |
EP (1) | EP1186054B9 (de) |
JP (1) | JP4139595B2 (de) |
KR (1) | KR100416442B1 (de) |
AT (1) | ATE254338T1 (de) |
CA (1) | CA2373602A1 (de) |
DE (1) | DE60006529T2 (de) |
WO (1) | WO2000074144A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5130641B2 (ja) * | 2006-03-31 | 2013-01-30 | サンケン電気株式会社 | 複合半導体装置 |
JP2002289790A (ja) | 2001-03-27 | 2002-10-04 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
JP2002353411A (ja) * | 2001-05-25 | 2002-12-06 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
US20040188703A1 (en) * | 2003-03-07 | 2004-09-30 | Tongwei Cheng | Switch |
WO2006099744A1 (en) * | 2005-03-25 | 2006-09-28 | The University Of British Columbia | Thin film field effect transistors having schottky gate-channel junctions |
US8841682B2 (en) * | 2009-08-27 | 2014-09-23 | Cree, Inc. | Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods |
CN108140614A (zh) * | 2015-07-30 | 2018-06-08 | 电路种子有限责任公司 | 基于互补电流场效应晶体管装置的参考产生器和电流源晶体管 |
US10096550B2 (en) * | 2017-02-21 | 2018-10-09 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
KR102599741B1 (ko) * | 2018-10-22 | 2023-11-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 포함하는 표시장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4277883A (en) * | 1977-12-27 | 1981-07-14 | Raytheon Company | Integrated circuit manufacturing method |
JP2604349B2 (ja) * | 1984-12-12 | 1997-04-30 | 日本電気株式会社 | 半導体装置 |
EP0268386A2 (de) * | 1986-11-18 | 1988-05-25 | General Motors Corporation | Tunneltransistor |
JP2503616B2 (ja) * | 1988-12-27 | 1996-06-05 | 日本電気株式会社 | 半導体装置 |
JPH04290474A (ja) * | 1991-03-19 | 1992-10-15 | Fujitsu Ltd | Soi構造電界効果半導体装置 |
JP3259395B2 (ja) * | 1993-02-08 | 2002-02-25 | 株式会社デンソー | 半導体集積回路 |
DE69323484T2 (de) * | 1993-04-22 | 1999-08-26 | Stmicroelectronics S.R.L. | Verfahren und Schaltung zur Tunneleffektprogrammierung eines MOSFETs mit schwebendem Gatter |
US5552330A (en) * | 1994-03-11 | 1996-09-03 | Motorola | Resonant tunneling fet and methods of fabrication |
-
2000
- 2000-05-31 JP JP2001500342A patent/JP4139595B2/ja not_active Expired - Fee Related
- 2000-05-31 EP EP00938019A patent/EP1186054B9/de not_active Expired - Lifetime
- 2000-05-31 CA CA002373602A patent/CA2373602A1/en not_active Abandoned
- 2000-05-31 DE DE60006529T patent/DE60006529T2/de not_active Expired - Fee Related
- 2000-05-31 AT AT00938019T patent/ATE254338T1/de not_active IP Right Cessation
- 2000-05-31 KR KR10-2001-7015537A patent/KR100416442B1/ko not_active IP Right Cessation
- 2000-05-31 US US10/018,439 patent/US6630382B1/en not_active Expired - Lifetime
- 2000-05-31 WO PCT/US2000/015066 patent/WO2000074144A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2000074144A1 (en) | 2000-12-07 |
EP1186054A1 (de) | 2002-03-13 |
EP1186054B1 (de) | 2003-11-12 |
KR20020010692A (ko) | 2002-02-04 |
US6630382B1 (en) | 2003-10-07 |
CA2373602A1 (en) | 2000-12-07 |
DE60006529T2 (de) | 2004-09-23 |
JP4139595B2 (ja) | 2008-08-27 |
DE60006529D1 (de) | 2003-12-18 |
JP2003501808A (ja) | 2003-01-14 |
KR100416442B1 (ko) | 2004-01-31 |
EP1186054B9 (de) | 2004-03-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |