EP0153618B1 - Verfahren zur Herstellung eines hochwärmeleitenden Substrates und Kupferleiterblech verwendbar in diesem Verfahren - Google Patents

Verfahren zur Herstellung eines hochwärmeleitenden Substrates und Kupferleiterblech verwendbar in diesem Verfahren Download PDF

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Publication number
EP0153618B1
EP0153618B1 EP85101186A EP85101186A EP0153618B1 EP 0153618 B1 EP0153618 B1 EP 0153618B1 EP 85101186 A EP85101186 A EP 85101186A EP 85101186 A EP85101186 A EP 85101186A EP 0153618 B1 EP0153618 B1 EP 0153618B1
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EP
European Patent Office
Prior art keywords
layer
substrate
thickness
ain
alloy
Prior art date
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EP85101186A
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English (en)
French (fr)
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EP0153618A2 (de
EP0153618A3 (en
Inventor
Masako Nakahashi
Makoto Shirokane
Tatsuo Yamazaki
Hisashi Yoshino
Akio Hori
Hiromitsu Takeda
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Toshiba Corp
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Toshiba Corp
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Publication of EP0153618A3 publication Critical patent/EP0153618A3/en
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Publication of EP0153618B1 publication Critical patent/EP0153618B1/de
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/268—Pb as the principal constituent
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    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
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    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Definitions

  • This invention relates to a method for bonding a Cu member to an AIN substrate and a copper wiring sheet (hereinafter “Cu wiring sheet”) usable in the method.
  • a power semiconductor module as shown in Fig. 1 has heretofore been used which employs a heat radiation substrate.
  • numeral 1 denotes a heat sink made of copper (Cu) and the like.
  • a first insulating plate Z 1 made of A1 2 0 3 is joined by means of a solder layer 3a onto the heat sink 1 in order to insulate the latter from a thermal diffusion plate described below.
  • the thermal diffusion plate 4 is joined by a solder layer 3b onto the insulating plate Z 1 .
  • second insulating plates Z 2 are also joined by a solder layer 3b onto the insulating plate Z 1 .
  • each numeral 6 denotes a joining layer formed between the insulating plate Z 1 or Z 2 and the solder layers.
  • a thermal radiation substrate used in conventional power semiconductor modules has the drawback that it is extremely complicated in construction, as shown in Fig. 1.
  • A1 2 0 3 constituting the first and second insulation plates Z 1 and Z 2 is low in thermal conductivity (20 W/m.°C) but high in dielectric strength (100 kV/cm), so that both functions, radiation and insulation, are required to be satisfied by employing both materials, C u and A1 2 0 3 separately.
  • aluminium nitride has recently attracted attention due to its excellent dielectric strength (140 to 170 kV/cm) and thermal conductivity (90 W/m.°C), and been joined to a copper (Cu) member to form a module substrate.
  • AIN is inferior in wettability with brazing materials, so that it is difficult to obtain a sufficient joining strength even if the joining of an AIN member to a Cu member with the use of silver brazing materials is attempted.
  • EP-A-0 135 603 (Ant. 54-3 document) describes a Ti-Ag-Cu brazing alloy for brazing Cu to A1 2 0 3 .
  • the invention comprises a method for bonding of a Cu member to an AIN substrate and is characterized in that an active layer 13 is interposed therebetween, said active layer comprising a laminate of an Ag layer with a thickness of 0,2 to 9 ⁇ m, an active metal layer (Ti, Zr and/or Hf) with a thickness of 0,1 to 5pm and an (optional) Cu layer with a thickness of 0 to 9 ⁇ m; upon heat-treatment in a vacuum or inert atmosphere, a Ti-(Zr, Hf)-Ag-Cu alloy layer is formed so that upon cooling the AIN substrate 11 and the Cu member 12 are securely joined together through the alloy layer 13.
  • an active layer 13 comprising a laminate of an Ag layer with a thickness of 0,2 to 9 ⁇ m, an active metal layer (Ti, Zr and/or Hf) with a thickness of 0,1 to 5pm and an (optional) Cu layer with a thickness of 0 to 9 ⁇ m; upon heat-treatment in a vacuum or inert atmosphere, a Ti-(
  • the active metal layer 13 comprises titanium.
  • the invention also comprises a method for preparing a highly heat-conductive substrate which is characterized in that an active layer 13 comprising a laminate of an Ag layer with a thickness of 0,2 to 9pm, an active metal layer (Ti, Zr and/or Hf) with a thickness of 0,1 to 5pm and an (optional) Cu layer with a thickness of 0 to 9pm is first provided on the surface of a Cu sheet 12 and the assembly is then bonded to an AIN substrate 11.
  • an active layer 13 comprising a laminate of an Ag layer with a thickness of 0,2 to 9pm, an active metal layer (Ti, Zr and/or Hf) with a thickness of 0,1 to 5pm and an (optional) Cu layer with a thickness of 0 to 9pm is first provided on the surface of a Cu sheet 12 and the assembly is then bonded to an AIN substrate 11.
  • the active layer 13 preferably comprises titanium.
  • the invention also comprises a Cu wiring sheet for use in the methods of claims 1 to 4 which comprises an active layer 13 comprising a laminate of an Ag layer with a thickness of 0,2 to 9 ⁇ m, a a layer of an active metal (Ti, Zr and/or Hf) with a thickness of 0,1 to 5um and an (optional) Cu layer with a thickness of 0 to 9pm.
  • an active layer 13 comprising a laminate of an Ag layer with a thickness of 0,2 to 9 ⁇ m, a a layer of an active metal (Ti, Zr and/or Hf) with a thickness of 0,1 to 5um and an (optional) Cu layer with a thickness of 0 to 9pm.
  • the active metal layer comprises titanium.
  • the method for preparing the highly heat-conductive substrate according to this invention will be given below, taking an example in which Ti is used as an active metal layer.
  • an active layer comprising an Ag layer and a Ti layer, or an Ag layer, a Ti layer and a Cu layer, and having a thickness of 0.5 to 10 um is interposed between an AIN substrate and a Cu member.
  • methods for interposing the active layer may include a method employing Ag, Ti and Cu metal foils, a method of laminating Ag, Ti and Cu on an AIN member or a Cu member by a sputtering method, a vacuum evaporation method or a plating method, and a method in which stages of the metal foil method, the sputtering method and the vacuum evaporation method are combined.
  • the Ag layer is 0.2 to 9 _ ⁇ m thick and the active metal (such as Ti) layer is 0.1 to 5 um thick.
  • the active layer comprising an Ag layer, a Ti layer and a Cu layer and having a thickness of 0.5 to 10 ⁇ m is interposed, it is preferred that the Ag layer is 0.2 to 9 pm thick, the active metal (such as Ti) layer is 0.1 to 5 ⁇ m thick and the Cu layer is not more than 9 pm thick.
  • the active layer comprising an Ag layer and a Ti layer, or an Ag layer, a Ti layer and a Cu layer
  • the active layer is less than 0.5 um in thickness
  • high bonding strength between the AIN substrate and the Cu member cannot be obtained.
  • the active layer is more than 10 ⁇ m in thickness, molten materials are overflowed to the outer side of the joining part during fusing by heat resulting in the loss of function as a substrate.
  • an Ag layer and a Ti layer, or an Ag layer, a Ti layer and a Cu layer may be interposed between the AIN substrate and the Cu member in any order, the most stable joining part can be obtained by arranging the Ti layer, the Ag layer and furthermore the Cu layer, if necessary, in this order, on the surface of the AIN substrate.
  • the number of layers of each Ag, Ti and Cu to be interposed is not necessarily limited to a single one but, if desired, a plurality of the layers can be interposed.
  • Lamination of an Ag layer, a Ti layer or a Cu layer by a sputtering method, a vacuum evaporation method and the like may-be effected on either the AIN substrate or the Cu member, but a method of laminating the Ti layer, the Ag layer and optionally the Cu layer on the Cu member in this order may provide a method easy in procedure and also result in stable joining materials.
  • the joining part between the AIN substrate and the Cu member is then heated in a vacuum or inert atmosphere.
  • the joining part may be heated under a pressure of 0 to 1 kg/mm 2 as required; the application of pressure is basically not essential, however.
  • the heating temperature is required to be lower than the melting point of the Cu member. Specifically, heating may be effected within the range of 780 to 1082°C. As a result of this heat treatment, a fused Ag-Cu-Ti alloy liquid is formed between the AIN substrate and the Cu member.
  • the surface portion of the Cu member in contact with the Ag-Ti layer is fused in part of the above- mentioned temperature by an eutectic reaction with Ag to form a Ti-Ag-Cu alloy layer. Subsequently, the alloy thus obtained is cooled to achieve a highly heat-conductive power semiconductor module substrate in which the AIN substrate and the Cu member are securely joined without any of the Ag-Ti-Cu alloy fused liquid having overflowed towards the joining part or the outer side thereof.
  • the active layer comprising an Ag layer and a Ti layer, or an Ag layer, a Ti layer and a Cu layer, is previously provided on the surface of a Cu sheet, which is a wiring layer, to obtain a Cu wiring sheet.
  • a Cu sheet which is a wiring layer
  • This is then provided on the AIN substrate so that the active layer side thereof is in contact with the AIN substrate, and heated to convert said layer to an alloy, thereby joining it to the AIN substrate.
  • methods for providing the active layer on the surface of a Cu sheet may include, for example, a method in which an active metal layer and a soft metal layer are laminated directly by a vacuum evaporation, a sputtering method or a plating method, a method in which an active metal foil and a soft metal foil are joined on the Cu sheet by the use of bonding agents, a method in which powders of an active metal or soft metal are mixed with an organic solvent to form a paste, the resulting paste then being applied on a Cu sheet, and a method in which the above methods are combined.
  • the order for interposing the active layer between the AIN substrate and the Cu sheet is the same as in the first embodiment described above.
  • the Cu sheet of this invention is excellent in processability as it possesses excellent ductility and has a structure basically comprising a Cu sheet, which can be readily etched, and on which an active layer with a thickness of 10 ⁇ m or less is easily provided.
  • the Cu wiring sheet of this invention is laminated on a AIN substrate so that the active layer side of the sheet may be in contact with the AIN substrate, and the joining parts of both members are then heated by means of high frequency induction, for example, in a vacuum or an inert -atmosphere.
  • a small pressure (0 to 1 kg/mm 2 ) may be applied to bring the joining surfaces in close contact with each other during heating, although it is not essential to apply pressure.
  • the heating temperature is required to be less than the melting point of the Cu sheet, and preferably ranges from 780 to 1082°C.
  • a fused liquid alloy for example, of Ag-Cu-Ti is formed between the AIN substrate and the Cu sheet, and the resulting liquid is solidified by the subsequent cooling without any liquid overflowing towards the outer side of the joining part.
  • the AIN substrate and the Cu sheet are thereby securely joined to form an AIN substrate suitable for a high power semiconductor substrate.
  • a plurality of sheet of the Cu member 12, deposited with a_Ti layer of 0.5 um thickness and an Ag layer of 1.0 pm thickness in this order, as an active layer by means of a vacuum evaporation method, and an AIN substrate 11, functioning simultaneously as an insulating plate, a radiation plate and a heat sink are washed and degreased with trichlene and acetone, and then set in a hot press, maintained in a vacuum of 2 x 10- 5 Torr, in such a manner that the vacuum evaporated side of the Cu member is in close contact with the AIN substrate.
  • a pressure of 0.1 kg/mm 2 is applied from above and below on a joining part between the AIN substrate and the plurality sheets of the Cu member, the joining part being maintained at 830°C for 10 minutes by means of high frequency heating to form a fused Ag-Ti-Cu liquid alloy.
  • the resulting liquid is cooled in an argon gas atmosphere to obtain a power semiconductor module substrate 14 having structure in which the Cu member 12 is joined to the AIN substrate by an Ag-Ti-Cu alloy layer 13 obtained from the active layer comprising an Ag layer and a Ti layer.
  • the semiconductor module substrate obtained in this manner is one in which the AIN substrate 11 and the Cu member 12 are securely joined with each other by the allo layer 13, no overflowing of the alloy layer from the joining part being observed.
  • a power semiconductor module with a thermal conductivity of 88 W/K.cm in the direction from the semiconductor element 15 to the AIN substrate 11 (thickness direction) is obtained, which- is capable of radiating effectively a large quantity of heat generated in the semiconductor 15 from the Cu member 12 and the AIN substrate 11.
  • Shown in cross-section in Fig. 4 are a plurality of sheets of Cu members 12 and a thermal diffusion plate 17, each having an Ag layer with a thickness of 2 ⁇ m and a Ti layer of 1 ⁇ m thickness deposited in this order, respectively, on the joining surfaces defined between an AIN substrate 11, by a vacuum evaporation method.
  • These and an AIN substrate 11 are then washed and degreased with trichlene and acetone, and set in a hot press maintained in a vacuum of 2 x 10- 5 Torr, so that the vacuum evaporated sides of the Cu member 12 and the thermal diffusion plate 17 are in close contact with upper and lower surfaces of the AIN, respectively.
  • the semiconductor module substrate 14 obtained in this way is one in which the AIN substrate 11 and the Cu member 12, and the AIN substrate 11 and the thermal diffusion plate 17 are joined securely with each other by the alloy layer 13', respectively, no overflowing of the alloy layers 13' from the joining part being observed.
  • a power semiconductor module with a thermal conductivity of 88 W/K.cm in the direction from the semiconductor element 15 to the AIN substrate 11 (thickness direction) is obtained, which is capable of radiating effectively a large quantity of heat generated in the semiconductor 15 from the Cu member 12' the AIN substrate 11, thermal diffusion plate 17 and the heat sink 18.
  • an AIN substrate having a Ti layer of 0.5 ⁇ m thickness deposited thereon by a vacuum evaporation method, and a plurality of sheets of the Cu member 12 having an Ag layer of 3 pm thickness plated thereon and a Ti layer with a thickness of 0.5 ⁇ m deposited thereon by a vacuum evaporation method are washed and degreased with trichlene and acetone, and then set in a hot press maintained in a vacuum of 2 x 10- 5 Torr, so that the vacuum evaporated sides or plated side of the AIN substrate and the Cu member are in close contact with each other.
  • the semiconductor module substrate obtained is one in which the AIN substrate and the Cu member are securely joined with each other by the alloy layer, no overflowing of the alloy layer from the joining part being observed.
  • a power semiconductor module is obtained with a thermal conductivity of 88 W/K.cm in the direction of thickness, which is capable of effectively radiating a large quantity of heat generated in the semiconductor from the Cu member and the AIN substrate.
  • a plurality of sheets of the Cu member 12, deposited with an Ag layer of 1 um thickness and a Ti layer of 0.6 um thickness in this order by a vacuum evaporation method, and an AIN substrate are washed and degreased with trichlene and acetone, and then set in a hot press maintained in a vacuum of 2 x 10- 5 Torr, so that the vacuum evaporated side of the Cu member is in close contact with the AIN.
  • a pressure of 0.1 kg/mm 2 is applied from above and below on a joining part between the AIN substrate and the plural sheets of Cu member, the joining part being maintained at 830°C for 10 minutes by means of high frequency heating to form a fused Ag-Ti-Cu liquid alloy. After heating, the resulting liquid is then cooled in an argon gas atmosphere to obtain a power semiconductor module substrate.
  • the semiconductor module substrate obtained in this manner is one in which the AIN substrate and the Cu member 12 are securely joined with each other by the alloy layer 13, no overflowing of the alloy layer from the joining part being observed.
  • the substrate obtained in the above manner is confirmed to have a good joining state without any crack generation in the AIN substrate.
  • a plurality of sheets of the Cu member 12, deposited with a Ti layer of 0.5 um thickness, an Ag layer of 2 ⁇ m thickness and a Cu layer of 2 pm thickness in this order by a vacuum evaporation method, and an AIN substrate are washed and degreased with trichlene and acetone.
  • a pressure of 0.1 kg/mm 2 is applied from above and below on a joining part between the AIN substrate and the plurality of sheets of the Cu member, which was set so that the vacuum evaporated side of the Cu member is in close contact with the AIN, the joining part being maintained at 830°C for 10 minutes in a highly pure argon gas (Ar) atmosphere to form an Ag-Ti-Cu alloy layer.
  • the resulting layer is cooled in an argon atmosphere to obtain a power semiconductor module subtrate having a structure in which the Cu member is joined to the AIN substrate by the Ag-Ti-Cu alloy layer.
  • the semiconductor module substrate obtained in this way is one in which the AIN substrate and the Cu member are joined securely with each other by the alloy layer, no overflowing of the alloy layer from the joining part being observed.
  • a Cu wiring sheet deposited with a Ti layer of 1 ⁇ m thickness and an Ag layer of 4 pm thickness in this order by a vacuum evaporation method, thus giving a total thickness of 5 ⁇ .1m as an active layer, is processed to form a predetermined shape by a photo-etching method.
  • a plurality of sheets of the Cu wiring sheet 1, an AIN substrate 2, functioning simultaneously as an insulating plate, a radiation plate and a heat sink are washed and degreased with trichlene and acetone, and then set in a hot press maintained in a vacuum of 2 x 10- 5 Torr, so that the vacuum evaporated side of the Cu member overlapping the AIN substrate 2 is in contact with the AIN.
  • the joining part is maintained at 830°C for 10 minutes by means of high frequency heating to form a fused Ag-Ti-Cu liquid alloy.
  • the resulting liquid is cooled in an argon gas atmosphere to obtain a power semiconductor module substrate 4 having a structure in which the Cu wiring sheet is joined to the AIN substrate 2 by an Ag-Ti-Cu alloy layer 3 obtained by fusing and solidifying the Ti active layer, as shown in Fig. 6.
  • the semiconductor module substrate 4 obtained by this method is one in which the AIN substrate 2 and the Cu member 1 are securely joined with each other by the alloy layer 3, no overflowing of the alloy layer 3 from the joining part being observed.
  • semiconductor elements 5 are mounted on the above module substrate 4 with a Pb-Sn type solder 6.
  • the measurement of a heat conductivity in a direction from the semiconductor element 5 to the AIN substrate 2 (thickness direction) gives a value of 88 W/K.cm, and the substrate is confirmed to have the capability of radiating effectively a large quantity of heat generated in the semiconductor 5 through the Cu wiring sheet and the alloy layer 3 towards the AIN substrate 2 and to have a good joining state between the Cu wiring sheet and AIN substrate 2.
  • the Cu wiring sheet 1 obtained and the AIN substrate 2 are washed and degreased with trichlene and acetone, and then set in a hot press maintained in a vacuum of 2 x 10 -5 Torr, so that the active layer deposited side of the Cu member is in contact with the AIN.
  • a pressure of 0.05 kg/mm 2 is applied from above and below on a joining part between the AIN substrate 2 and the Cu wiring sheet 1, the joining part being maintained at 830°C for 10 minutes by means of high frequency heating to form fused Ag-Ti-Cu alloy liquid.
  • the resulting liquid is cooled in an argon gas atmosphere to form a power semiconductor module substrate 4 having a structure in which the Cu wiring sheet 1 is joined to the AIN substrate 2 by an alloy layer obtained by fusing and solidifying of the Ag-Ti-Cu active layer as shown in Fig. 6.
  • the semiconductor module substrate 4 obtained here is one in which the AIN substrate 2 and the Cu wiring sheet 1 are securely joined with each other by the alloy layer 3, with a good joining state and without any overflowing of the alloy layer 3 from the joining part.

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Claims (6)

1. Verfahren zum Binden eines Kupferteils an ein AIN-Substrat, dadurch gekennzeichnet, dass eine aktive Schicht (13) dazwischengelegt wird, wobei die aktive Schicht ein Laminat aus einer Ag-Schicht mit einer Dicke von 0,2 bis 9um und einer aktiven Metallschicht (Ti, Zr und/oder Hf) mit einer Dicke von 0,1 bis 5µm und (gewünschtenfalls) eine Cu-Schicht mit einer Dicke von 0 bis 9um umfasst; bei einer Wärmebehandlung in einem Vakuum oder einer inerten Atmosphäre eine Ti(Zr, Hf)-Ag-Cu-Legierungsschicht- gebildet wird, so dass beim Abkühlen das AIN-Substrat (11) und das Kupferteil (12) fest miteinander durch die Legierungsschicht (13) verbunden sind.
2. Verfahren gemäss Anspruch 1, bei welchem die aktive Metallschicht (13) Titan einschliesst.
3. Verfahren zur Herstellung eines hoch wärmeleitfähigen Substrates, dadurch gekennzeichnet, dass eine aktive Schicht (13), umfassend ein Laminat aus einer Ag-Schicht mit einer Dicke von 0,2 bis 9µm, eine aktive Metallschicht (Ti, Zr und/ oder Hf) mit einer Dicke von 0,1 bis 5µm und (gewünschtenfalls) einer Cu-Schicht mit einer Dicke von 0 bis 9µm zunächst auf der Oberfläche eines Kupferbleches (12) ausgebildet wird und die Anordnung dann an ein AIN-Substrat (11) gebunden wird, wobei die aktive Schicht (13) darin in Kontakt mit dem AIN-Substrat ist und in eine Legierung überführt wird.
4. Verfahren gemäss Anspruch 3, bei welchem die aktive Metallschicht (13) Titan einschliesst.
5. Ein Cu-Verdrahtungsblech für die Verwendung in dem Verfahren gemäss Ansprüchen 1 bis 4, welches eine aktive Schicht (13) umfasst, umfassend ein Laminat aus einer Ag-Schicht mit einer Dicke von 0,2 bis 9µm, einer Schicht aus einem aktiven Metall (Ti, Zr und/oder Hf) mit einer Dicke von 0,1 bis 5µm und (gewünschtenfalls) einer Cu-Schicht mit einer Dicke von 0 bis 9µm.
6. Blech gemäss Anspruch 5, bei dem die aktive Metallschicht Titan einschliesst.
EP85101186A 1984-02-24 1985-02-05 Verfahren zur Herstellung eines hochwärmeleitenden Substrates und Kupferleiterblech verwendbar in diesem Verfahren Expired - Lifetime EP0153618B1 (de)

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JP59032628A JPH0810710B2 (ja) 1984-02-24 1984-02-24 良熱伝導性基板の製造方法
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Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265991A (ja) * 1985-09-13 1987-03-25 株式会社東芝 高熱伝導性セラミツクス基板
DE3604075A1 (de) * 1986-02-08 1987-08-13 Bosch Gmbh Robert Verpackung von leistungsbauelementen
JPH06387B2 (ja) * 1986-05-29 1994-01-05 富士通株式会社 ガラス・セラミツク基板
DE3635375A1 (de) * 1986-10-17 1988-04-28 Heraeus Gmbh W C Systemtraeger fuer elektronische bauelemente
EP0286335B2 (de) * 1987-04-02 2001-10-17 Kabushiki Kaisha Toshiba Luftdichter Keramikbehälter
DE3883873T2 (de) * 1987-06-30 1994-01-05 Sumitomo Electric Industries Trägerelement für Halbleiterapparat.
JPS649878A (en) * 1987-07-02 1989-01-13 Agency Ind Science Techn Bonding between silicon nitride ceramics and metal
CA1284536C (en) * 1987-07-03 1991-05-28 Akira Sasame Member for semiconductor apparatus
US5010388A (en) * 1987-07-03 1991-04-23 Sumitomo Electric Industries, Ltd. Connection structure between components for semiconductor apparatus
JPH0676790B2 (ja) * 1987-07-30 1994-09-28 株式会社東芝 イグナイタ
JP2544398B2 (ja) * 1987-08-27 1996-10-16 富士通株式会社 Ａ１ｎセラミックスのメタライズ方法
DE3740295A1 (de) * 1987-11-27 1989-06-08 Asea Brown Boveri Axiales magnetlager
EP0331500B1 (de) * 1988-03-04 1993-01-07 Kabushiki Kaisha Toshiba Hartlötpaste zum Verbinden von Metalle und keramische Materialien
JP2755594B2 (ja) * 1988-03-30 1998-05-20 株式会社 東芝 セラミックス回路基板
GB2222721B (en) * 1988-08-23 1993-07-28 Nobuo Mikoshiba Cooling semiconductor devices
JPH0264070A (ja) * 1988-08-29 1990-03-05 Nec Corp ろう付方法
JPH0671137B2 (ja) * 1989-06-15 1994-09-07 電気化学工業株式会社 銅を接合した窒化アルミニウム基板の製法
JPH0345571A (ja) * 1989-07-14 1991-02-27 Showa Denko Kk 銅・セラミックス複合基板
JPH07114316B2 (ja) * 1989-09-28 1995-12-06 電気化学工業株式会社 銅回路を有する窒化アルミニウム基板の製造方法
US5653379A (en) * 1989-12-18 1997-08-05 Texas Instruments Incorporated Clad metal substrate
JP2594475B2 (ja) * 1990-04-16 1997-03-26 電気化学工業株式会社 セラミックス回路基板
JPH09181423A (ja) * 1990-04-16 1997-07-11 Denki Kagaku Kogyo Kk セラミックス回路基板
DE69031039T2 (de) * 1990-04-16 1997-11-06 Denki Kagaku Kogyo Kk Keramische leiterplatte
JP2504610B2 (ja) * 1990-07-26 1996-06-05 株式会社東芝 電力用半導体装置
US5170930A (en) * 1991-11-14 1992-12-15 Microelectronics And Computer Technology Corporation Liquid metal paste for thermal and electrical connections
TW238419B (de) 1992-08-21 1995-01-11 Olin Corp
US5328087A (en) * 1993-03-29 1994-07-12 Microelectronics And Computer Technology Corporation Thermally and electrically conductive adhesive material and method of bonding with same
US5445308A (en) * 1993-03-29 1995-08-29 Nelson; Richard D. Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal
US5581151A (en) * 1993-07-30 1996-12-03 Litton Systems, Inc. Photomultiplier apparatus having a multi-layer unitary ceramic housing
US5360942A (en) * 1993-11-16 1994-11-01 Olin Corporation Multi-chip electronic package module utilizing an adhesive sheet
EP0661748A1 (de) * 1993-12-28 1995-07-05 Hitachi, Ltd. Halbleitervorrichtung
JP3866320B2 (ja) * 1995-02-09 2007-01-10 日本碍子株式会社 接合体、および接合体の製造方法
US5534356A (en) * 1995-04-26 1996-07-09 Olin Corporation Anodized aluminum substrate having increased breakdown voltage
US5742021A (en) * 1996-08-12 1998-04-21 International Business Machines Corporation High thermal conductivity substrate and the method of brazing a cap thereto
JP3987201B2 (ja) * 1998-05-01 2007-10-03 日本碍子株式会社 接合体の製造方法
JP2000082774A (ja) * 1998-06-30 2000-03-21 Sumitomo Electric Ind Ltd パワ―モジュ―ル用基板およびその基板を用いたパワ―モジュ―ル
JP3794454B2 (ja) * 1998-09-16 2006-07-05 富士電機ホールディングス株式会社 窒化物セラミックス基板
AT408345B (de) * 1999-11-17 2001-10-25 Electrovac Verfahren zur festlegung eines aus metall-matrix- composite-(mmc-) materiales gebildeten körpers auf einem keramischen körper
US7061111B2 (en) * 2000-04-11 2006-06-13 Micron Technology, Inc. Interconnect structure for use in an integrated circuit
US7012810B2 (en) * 2000-09-20 2006-03-14 Ballard Power Systems Corporation Leadframe-based module DC bus design to reduce module inductance
DE10212495B4 (de) * 2002-03-21 2004-02-26 Schulz-Harder, Jürgen, Dr.-Ing. Verfahren zum Herstellen eines Metall-Keramik-Substrats, vorzugsweise eines Kupfer-Keramik-Substrats
JP4130352B2 (ja) * 2002-03-29 2008-08-06 Ｄｏｗａホールディングス株式会社 ベース一体型の金属セラミックス接合部材の湿式処理方法、および当該湿式処理方法により製造されたパワーモジュール用部材並びにパワーモジュール
DE10327360B4 (de) 2003-06-16 2012-05-24 Curamik Electronics Gmbh Verfahren zum Herstellen eines Keramik-Metall-Substrates
DE102005042554B4 (de) 2005-08-10 2008-04-30 Curamik Electronics Gmbh Metall-Keramik-Substrat und Verfahren zur Herstellung eines Metall-Keramik-Substrats
DE102005061049A1 (de) * 2005-12-19 2007-06-21 Curamik Electronics Gmbh Metall-Keramik-Substrat
US20080000679A1 (en) * 2006-06-09 2008-01-03 Nitto Denko Corporation Wired circuit board and producing method thereof
EP1959528B1 (de) 2007-02-13 2017-04-12 Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH Diodenlaseranordnung sowie Verfahren zum Herstellen einer solchen Anordnung
DE102007008027A1 (de) 2007-02-13 2008-08-21 Curamik Electronics Gmbh Diodenlaseranordnung sowie Verfahren zum Herstellen einer solchen Anordnung
DE102007030389B4 (de) 2007-03-30 2015-08-13 Rogers Germany Gmbh Moduleinheit mit einer Wärmesenke
DE102009041574A1 (de) 2008-10-29 2010-05-12 Electrovac Ag Verbundmaterial, Verfahren zum Herstellen eines Verbundmaterials sowie Kleber oder Bondmaterial
JP5492191B2 (ja) * 2009-03-30 2014-05-14 株式会社トクヤマ メタライズド基板を製造する方法、メタライズド基板
DE102009015520A1 (de) 2009-04-02 2010-10-07 Electrovac Ag Metall-Keramik-Substrat
DE102009022877B4 (de) 2009-04-29 2014-12-24 Rogers Germany Gmbh Gekühlte elektrische Baueinheit
JP2012528471A (ja) 2009-05-27 2012-11-12 キュラミーク エレクトロニクス ゲーエムベーハー 冷却される電気構成ユニット
DE102009033029A1 (de) 2009-07-02 2011-01-05 Electrovac Ag Elektronische Vorrichtung
KR20130002980A (ko) 2010-03-02 2013-01-08 가부시끼가이샤 도꾸야마 메탈라이즈드 기판의 제조 방법
DE102010024520B4 (de) 2010-06-21 2017-08-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erhöhung der thermo-mechanischen Beständigkeit eines Metall-Keramik-Substrats
DE102010049499B4 (de) 2010-10-27 2014-04-10 Curamik Electronics Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines solchen Substrates
WO2013017124A1 (de) 2011-07-29 2013-02-07 Curamik Electronics Gmbh Verpackung für substrate sowie verpackungseinheit mit einer solchen verpackung
DE102012110382B4 (de) 2011-12-21 2021-02-18 Rogers Germany Gmbh Substrat sowie Verfahren zum Herstellen eines Substrates
DE102012102090A1 (de) 2012-01-31 2013-08-01 Curamik Electronics Gmbh Thermoelektrisches Generatormodul, Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
JP2013179263A (ja) * 2012-02-01 2013-09-09 Mitsubishi Materials Corp パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
KR102078891B1 (ko) 2012-02-01 2020-02-18 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판, 히트 싱크가 부착된 파워 모듈용 기판, 파워 모듈, 파워 모듈용 기판의 제조 방법, 및 동 부재 접합용 페이스트
DE102012102611B4 (de) 2012-02-15 2017-07-27 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
WO2013143534A1 (de) 2012-03-30 2013-10-03 Curamik Electronics Gmbh Tunnelofen
DE102012102787B4 (de) 2012-03-30 2015-04-16 Rogers Germany Gmbh Verfahren zum Herstellen von Metall-Keramik-Substraten
DE102013102797A1 (de) 2012-03-30 2013-10-02 Curamik Electronics Gmbh Tunnelofen
DE102012103786B4 (de) 2012-04-30 2017-05-18 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102012104903B4 (de) 2012-05-10 2023-07-13 Rogers Germany Gmbh Verfahren zum Herstellen von Metall-Keramik-Substraten sowie nach diesem Verfahren hergestelltes Metall-Keramik-Substrat
DE102012107399B4 (de) 2012-07-10 2014-09-11 Rogers Germany Gmbh Verfahren zum Herstellen von Metall-Keramik-Substraten sowie Metall-Keramik-Substrat
DE102012106244B4 (de) 2012-07-11 2020-02-20 Rogers Germany Gmbh Metall-Keramik-Substrat
DE102012107570B4 (de) 2012-08-17 2017-08-03 Rogers Germany Gmbh Verfahren zur Herstellung von Hohlkörpern, insbesondere von Kühlern, Hohlkörper sowie Kühler enthaltende elektrische oder elektronische Baugruppen
DE102012110322B4 (de) 2012-10-29 2014-09-11 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102013102540B4 (de) 2013-02-22 2019-07-04 Rogers Germany Gmbh Metall-Keramik-Substrat, Modulanordnung sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
JP2014172802A (ja) * 2013-03-12 2014-09-22 Mitsubishi Materials Corp 銅部材接合用ペースト、接合体、及びパワーモジュール用基板
DE102013104739B4 (de) 2013-03-14 2022-10-27 Rogers Germany Gmbh Metall-Keramik-Substrate sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102013102637B4 (de) 2013-03-14 2017-08-31 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines derartigen Metall-Keramik-Substrates und Anordnung von derartigen Metall-Keramik-Substraten
JP5672324B2 (ja) * 2013-03-18 2015-02-18 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
DE102013104055B4 (de) 2013-04-22 2023-08-31 Rogers Germany Gmbh Basissubstrat, Metall-Keramik-Substrat hergestellt aus einem Basissubstrat sowie Verfahren zum Herstellen eines Basissubstrates
DE102013105528B4 (de) 2013-05-29 2021-09-02 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102013108610A1 (de) 2013-08-06 2015-02-12 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102013013842B4 (de) 2013-08-20 2015-10-15 Rogers Germany Gmbh Verfahren zum Herstellen von Metall-Keramik-Substraten sowie Metall-Keramik-Substrat
DE102013113734B4 (de) 2013-12-10 2018-03-08 Rogers Germany Gmbh Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102013113736B4 (de) 2013-12-10 2019-11-14 Rogers Germany Gmbh Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102014106694B3 (de) * 2014-05-13 2015-04-02 Rogers Germany Gmbh Verfahren zur Metallisierung zumindest eines plattenförmigen Keramiksubstrates sowie Metall-Keramik-Substrat
DE102014119386B4 (de) 2014-12-22 2019-04-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen eines Metall-Keramik-Substrates und zugehöriges Metall-Keramik-Substrat
EP3301082A1 (de) 2016-09-30 2018-04-04 Infineon Technologies AG Verfahren zur herstellung eines metall-keramik-substrats und metall-keramik-substrat
EP3326986B1 (de) 2016-11-28 2020-11-25 Infineon Technologies AG Verfahren zur herstellung eines metall-keramik-substrats
DE102018207955B4 (de) 2018-05-22 2023-05-17 Schweizer Electronic Ag Leiterplattenmodul mit integriertem leistungselektronischen Metall-Keramik-Modul sowie Verfahren zu dessen Herstellung
JP2020145335A (ja) * 2019-03-07 2020-09-10 株式会社Ｆｊコンポジット 回路基板の製造方法
DE102019126954A1 (de) * 2019-10-08 2021-04-08 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats, Lötsystem und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren
DE102019135097A1 (de) * 2019-12-19 2021-06-24 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren
DE102020111697A1 (de) * 2020-04-29 2021-11-04 Rogers Germany Gmbh Trägersubstrat und Verfahren zur Herstellung eines Trägersubstrats
DE102020111700A1 (de) 2020-04-29 2021-11-04 Rogers Germany Gmbh Trägersubstrat und Verfahren zur Herstellung eines Trägersubstrats
DE102020111698A1 (de) * 2020-04-29 2021-11-04 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und ein Metall-Keramik-Substrat hergestellt mit einem solchen Verfahren
JPWO2022034810A1 (de) * 2020-08-12 2022-02-17

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1433158B2 (de) * 1960-01-28 1971-10-21 Magyar Adocsogyar, Budapest Lotpulvergemisch in gepresster form zum vakuumdichten mechani sch festen verbinden schwer benetzbarer werkstoffe
US3609471A (en) * 1969-07-22 1971-09-28 Gen Electric Semiconductor device with thermally conductive dielectric barrier
SE7508730L (sv) * 1974-08-02 1976-02-03 Inst Materialovedenia Akademii Forfarande for sammanlodning av metaller med extremt harda material, foretredesvis syntetiska material, samt lodemedel for genomforande av forfarandet
JPS5696784A (en) * 1979-12-28 1981-08-05 Seiko Instr & Electronics Joint member for ceramics and metal
DE3165502D1 (en) * 1980-04-21 1984-09-20 Bbc Brown Boveri & Cie Multi-layered-solder and method of producing such solder
DE3377570D1 (en) * 1983-09-26 1988-09-08 Gte Prod Corp Ductile low temperature brazing alloy
DE3345219C1 (de) * 1983-12-14 1985-03-21 Daimler-Benz Ag, 7000 Stuttgart Lötfolie zur spannungsfreien Verbindung von Keramikkörpern mit Metall

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EP0153618A2 (de) 1985-09-04
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EP0153618A3 (en) 1987-04-15
DE3578264D1 (de) 1990-07-19
US4611745A (en) 1986-09-16

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