EP0096096A1 - Procédé pour régler l'angle d'inclination dans du polysilicum - Google Patents
Procédé pour régler l'angle d'inclination dans du polysilicum Download PDFInfo
- Publication number
- EP0096096A1 EP0096096A1 EP82105173A EP82105173A EP0096096A1 EP 0096096 A1 EP0096096 A1 EP 0096096A1 EP 82105173 A EP82105173 A EP 82105173A EP 82105173 A EP82105173 A EP 82105173A EP 0096096 A1 EP0096096 A1 EP 0096096A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- polysilicon
- layer
- hydrogen peroxide
- ammonia
- polysilicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 47
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 40
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000010405 reoxidation reaction Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ZRUOTKQBVMWMDK-UHFFFAOYSA-N 2-hydroxy-6-methylbenzaldehyde Chemical compound CC1=CC=CC(O)=C1C=O ZRUOTKQBVMWMDK-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- XXTZHYXQVWRADW-UHFFFAOYSA-N diazomethanone Chemical compound [N]N=C=O XXTZHYXQVWRADW-UHFFFAOYSA-N 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910000403 monosodium phosphate Inorganic materials 0.000 description 1
- 235000019799 monosodium phosphate Nutrition 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
Definitions
- the invention relates to a method for adjusting the edge angle of openings in a polysilicon layer, in which a resist mask is produced on the polysilicon layer to be etched in a photolithographic method and the exposed polysilicon is subsequently etched.
- the method according to the invention is used in the production of integrated memory arrangements with a plurality of memory cells arranged in a semiconductor substrate, each of which has a field effect transistor (FET) and a capacitor connected in series with it.
- FET field effect transistor
- the physical structures of this field effect transistor memory arrangement and a suitable process for producing these structures are described in German Patent 23 63 466.
- a characteristic of this process, which will be discussed in more detail in the specific description, is the multilayer gate insulation (oxide nitride) Shielding layer made of p-doped polycrystalline silicon and a diffusion source made of doped oxide.
- the application of the method according to the invention is not limited to the manufacture of the structures mentioned above, but can also be used in future semiconductor technologies.
- edge angles of openings in the shielding layer made of polysilicon must be set to values below 45 °.
- edge angles cannot be produced in p-doped polysilicon layers using graphic methods; typically steeper angles of the order of 60 ° to 70 ° are obtained.
- the object of the invention is therefore to provide a method for adjusting the edge angle of openings in a polysilicon layer, in which the photoresist adhesion in the photolithographic process carried out is influenced by a suitable pretreatment in such a way that during the subsequent etching of the exposed areas of the polysilicon layer, flat edge angles be preserved.
- the object of the invention is achieved according to claim 1 in that the polysilicon layer is treated with a mixture of 5 parts of water and 1 to 3 parts of ammonia and 0.25 to 1 part of hydrogen peroxide before applying the photoresist layer.
- the edge angle can also be influenced by the selection of a suitable temperature during the treatment.
- the so-called side path effect which relates to the formation of a parasitic current path between the source and drain of an FET when the gate is positively acted upon and is caused by movably charged contaminants near the edge of the metal gate, can be effectively prevented.
- FIG. 3 shows a scanning electron microscope image of the etched edge of an opening in the polysilicon layer.
- a substrate (1) made of p-doped silicon is shown, on the back of which there is an amorphous silicon layer (2) which serves to control leakage currents and was produced by implantation of argon with a dose and energy sufficient for amorphization .
- silicon dioxide (3) doped with arsenic is deposited on the wafer (1) in a reactor and undoped oxide from this is deposited from the vapor phase.
- the doped oxide layer deposited over the entire surface is structured in a photolithographic process using a first mask.
- As 2 0 3 diffuses from the oxide zones (3) to the silicon substrate (1) and is reduced there:
- This reaction is carried out in an oxidizing atmosphere, which prevents the formation of an arsenic layer.
- a driving-in step in pure nitrogen follows which the arsenic is driven to the desired depth.
- a thin thermal oxide layer grows on the wafer surface, which serves as a shield for the boron implantation (6) that now follows.
- the implantation of boron which leads to a doping profile of approximately 1.8 x 1016 At / cm 3 on the wafer surface, serves to set a constant threshold voltage.
- the doped oxide (3) above the storage node (5) is removed in a photolithographic process using a second mask, while it is retained over the bit line (4). After removing the photoresist, the thin driving oxide is also removed from the wafer surface. In this state, the memory cell is shown in Fig. La.
- insulators and conductors that are used to control the surface condition of the wafer are manufactured.
- an oxide layer (7) is thermally grown on the wafer (1). This is used as gate insulation of the field effect transistor.
- a silicon nitride layer (8) is then deposited from the vapor phase. The thickness ratio of both layers is matched to the desired properties of the integrated circuits to be produced.
- a polycrystalline silicon layer (9) is deposited over the oxide / nitride insulation and is doped with an acceptor material, for example with boron, for high conductivity.
- the method according to the invention is incorporated into the process sequence.
- the polysilicon (9) is then removed in the areas which are provided as a gate (10) and as contact points to the silicon (not shown) in a photolithographic process using a third mask. This state is shown in Fig. 1b.
- a second oxide layer (11) is formed on the polycrystalline silicon layer (9) by thermal oxidation in such a way that the edges of the layer 9 are also completely covered with oxide.
- the polysilicon (9) is converted into oxide in a layer thickness of approximately 300 nm. Since silicon dioxide grows very slowly on silicon nitride, only a very thin oxide layer (IIa) is formed at the same time on the nitride layer (8) exposed in the gate opening (10).
- An aluminum layer (12) is then evaporated onto the surface of the device.
- a fifth mask is structured using a fifth mask. The structuring takes place according to a metal lifting process, which is described in German Patent 26 17 914. The state after completion of the first metallization is shown in Fig. 1c. Insulated parts of the aluminum layer (12) establish the electrical connection between the polysilicon shielding layer (9) and the semiconductor substrate (1).
- the surface of the structure is covered by a sprayed-on quartz layer, which is used for protection and passivation.
- the application of a further metallization will not be discussed in more detail in the context of this description.
- a suitable pretreatment of the polysilicon is to ensure that in the subsequent photolithographic process the adhesion of the resist to the polysilicon layer (9) in the vicinity of the gate (10) to be etched and the contact points to be etched is modified such that the etching following the exposure, development and curing of the photoresist can be obtained through the photoresist mask in the polysilicon layer etching angle between 15 ° and 35 °.
- steeper etching angles are obtained due to the doping profile of the polysilicon and if one works according to conventional photolithographic processes.
- pretreatment solutions containing ammonia, hydrogen peroxide and water which are used in semiconductor technology to remove organic contaminants from wafer surfaces, are particularly suitable for influencing the photoresist adhesion if the individual constituents in the solution in a certain concentration ratio are included.
- the steepness of the edge angle can be further influenced by the selection of a specific temperature range. Experimental results have shown that the etching angles become steeper with increasing ammonia content and that they become flatter with increasing hydrogen peroxide content in the solution. Solutions containing 5 parts water, 1 to 3 parts ammonia and 0.25 to 1 part hydrogen peroxide are particularly suitable. Concentrated aqueous solutions of ammonia (28 to 29%) and hydrogen peroxide (30%) are used to prepare the solutions.
- the pretreatment solutions can be used as long as active hydrogen peroxide is still in the concentration range described above is available. For practical reasons, a standing time of 4 hours has proven itself.
- Substrates (1) which are provided with a polysilicon layer (9) are treated with an aqueous ammoniacal hydrogen peroxide solution.
- the treatment solution contains 5 parts water, 1 to 3 parts ammonia and 0.25 to 1 part hydrogen peroxide.
- the bath temperature is advantageously between 40 and 70 ° C. The pretreatment is carried out within two hours.
- the wafers pretreated in this way are then coated with an adhesion promoter, for example with hexamethyldisilazane.
- an adhesion promoter for example with hexamethyldisilazane.
- a positive photoresist dissolved in a mixture of organic solvents is applied.
- a resist available from Shipley under the trade name AZ 1350J which consists of an m-cresol-formaldehyde novolak resin, is suitable as such and a diazoketone sensitizer, which is identified as 4'-2'-3'-dihydroxybenzophenone ester of 1-0xo-2-diazonaphthalin-5-sulfonic acid.
- the photoresist layer is then dried for 3 to 15 minutes at 80 to 100 ° C. and exposed in a known manner.
- the exposure time depends on the size of the motif of the desired structures and depends on the exposure device used.
- the exposed photoresist layer is developed in a known manner in a developer based on sodium dihydrogen phosphate, sodium metasilicate and sodium hydroxide and cured at 130 ° C. for about 15 minutes.
- the polysilicon layer (9) is etched in a NNO 3 -HF-H 2 O mixture.
- the measurement of the edge angle of the openings in the polysilicon layer is performed with the scanning electron microscope (SEM) at a 90 inclination 0 of the sample.
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE8282105173T DE3277343D1 (en) | 1982-06-14 | 1982-06-14 | Method of adjusting the edge angle in polysilicon |
EP82105173A EP0096096B1 (fr) | 1982-06-14 | 1982-06-14 | Procédé pour régler l'angle d'inclination dans du polysilicum |
JP58067174A JPS58220431A (ja) | 1982-06-14 | 1983-04-18 | 多結晶シリコン層中の開孔の端部角度を設定する方法 |
US06/494,755 US4452881A (en) | 1982-06-14 | 1983-05-16 | Method of adjusting the edge angle in polysilicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP82105173A EP0096096B1 (fr) | 1982-06-14 | 1982-06-14 | Procédé pour régler l'angle d'inclination dans du polysilicum |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0096096A1 true EP0096096A1 (fr) | 1983-12-21 |
EP0096096B1 EP0096096B1 (fr) | 1987-09-16 |
Family
ID=8189085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP82105173A Expired EP0096096B1 (fr) | 1982-06-14 | 1982-06-14 | Procédé pour régler l'angle d'inclination dans du polysilicum |
Country Status (4)
Country | Link |
---|---|
US (1) | US4452881A (fr) |
EP (1) | EP0096096B1 (fr) |
JP (1) | JPS58220431A (fr) |
DE (1) | DE3277343D1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0469370A2 (fr) * | 1990-07-31 | 1992-02-05 | Gold Star Co. Ltd | Procédé d'attaque pour obtenir des parois inclinées |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970002427B1 (en) * | 1994-01-14 | 1997-03-05 | Lg Semicon Co Ltd | Fine patterning method of photoresist film |
US7022592B2 (en) * | 2003-10-03 | 2006-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ammonia-treated polysilicon semiconductor device |
TWI258201B (en) * | 2005-02-16 | 2006-07-11 | Powerchip Semiconductor Corp | Method for manufacturing semiconductor device and plug |
CN104409324A (zh) * | 2014-11-12 | 2015-03-11 | 吉林华微电子股份有限公司 | 能够避免沾污的多晶硅磷掺杂后处理清洗方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0001550A1 (fr) * | 1977-10-25 | 1979-05-02 | International Business Machines Corporation | Dispositif semiconducteur à intégration avec de petites structures et procédé pour sa fabrication |
DE2363466C3 (de) * | 1973-01-02 | 1980-10-02 | International Business Machines Corp., Armonk, N.Y. (V.St.A.) | Integrierte Speicheranordnung und Verfahren zur ihrer Herstellung |
DE2617914C2 (de) * | 1975-05-09 | 1982-05-27 | International Business Machines Corp., 10504 Armonk, N.Y. | Verfahren zum Herstellen von Mustern eines dünnen Films auf einem Substrat bei der Herstellung von integrierten Schaltungen |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3827908A (en) * | 1972-12-11 | 1974-08-06 | Ibm | Method for improving photoresist adherence |
US3811076A (en) * | 1973-01-02 | 1974-05-14 | Ibm | Field effect transistor integrated circuit and memory |
US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
JPS5218098B2 (fr) * | 1973-05-04 | 1977-05-19 |
-
1982
- 1982-06-14 EP EP82105173A patent/EP0096096B1/fr not_active Expired
- 1982-06-14 DE DE8282105173T patent/DE3277343D1/de not_active Expired
-
1983
- 1983-04-18 JP JP58067174A patent/JPS58220431A/ja active Granted
- 1983-05-16 US US06/494,755 patent/US4452881A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2363466C3 (de) * | 1973-01-02 | 1980-10-02 | International Business Machines Corp., Armonk, N.Y. (V.St.A.) | Integrierte Speicheranordnung und Verfahren zur ihrer Herstellung |
DE2617914C2 (de) * | 1975-05-09 | 1982-05-27 | International Business Machines Corp., 10504 Armonk, N.Y. | Verfahren zum Herstellen von Mustern eines dünnen Films auf einem Substrat bei der Herstellung von integrierten Schaltungen |
EP0001550A1 (fr) * | 1977-10-25 | 1979-05-02 | International Business Machines Corporation | Dispositif semiconducteur à intégration avec de petites structures et procédé pour sa fabrication |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0469370A2 (fr) * | 1990-07-31 | 1992-02-05 | Gold Star Co. Ltd | Procédé d'attaque pour obtenir des parois inclinées |
EP0469370A3 (en) * | 1990-07-31 | 1992-09-09 | Gold Star Co. Ltd | Etching process for sloped side walls |
Also Published As
Publication number | Publication date |
---|---|
DE3277343D1 (en) | 1987-10-22 |
JPH0139647B2 (fr) | 1989-08-22 |
US4452881A (en) | 1984-06-05 |
EP0096096B1 (fr) | 1987-09-16 |
JPS58220431A (ja) | 1983-12-22 |
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