EP0013222A1 - Diodenphasenschieber für Mikrowellen und elektronisch abtastende Antenne mit einem solchen Schieber - Google Patents

Diodenphasenschieber für Mikrowellen und elektronisch abtastende Antenne mit einem solchen Schieber Download PDF

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Publication number
EP0013222A1
EP0013222A1 EP79401032A EP79401032A EP0013222A1 EP 0013222 A1 EP0013222 A1 EP 0013222A1 EP 79401032 A EP79401032 A EP 79401032A EP 79401032 A EP79401032 A EP 79401032A EP 0013222 A1 EP0013222 A1 EP 0013222A1
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EP
European Patent Office
Prior art keywords
line
phase shifter
phase
diode
ribbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP79401032A
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English (en)
French (fr)
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EP0013222B1 (de
Inventor
Michel Baril
Vu San Hoang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Thomson CSF Scpi
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Thomson CSF Scpi
Thomson CSF SA
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Publication date
Application filed by Thomson CSF Scpi, Thomson CSF SA filed Critical Thomson CSF Scpi
Publication of EP0013222A1 publication Critical patent/EP0013222A1/de
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Publication of EP0013222B1 publication Critical patent/EP0013222B1/de
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/185—Phase-shifters using a diode or a gas filled discharge tube

Definitions

  • the present invention relates to a microwave phase shifter with diodes. More particularly, this phase shifter can be produced in a flat structure on a substrate of high dielectric constant and is capable of giving four phase states.
  • phase shifter there are different kinds of diode phase shifter, using those of the PIN type, such as disturbance phase shifters which are characterized by high power handling and wide bandwidth and line section phase shifters, such as the switching phase shifter, which characterized compared to the previous ones by a smaller footprint and constant losses as a function of the phase shift.
  • disturbance phase shifters which are characterized by high power handling and wide bandwidth
  • line section phase shifters such as the switching phase shifter
  • phase shifters of the prior art involving propagation line lengths, therefore have phase shift, loss and TOS characteristics varying as a function of frequency.
  • the object of the invention is a microwave phase shifter with PIN diodes, the structure of which makes it possible to avoid the drawbacks previously mentioned.
  • This structure combines the advantages of perburbation structures which fairly conveniently give constant phases, but at the cost of a large number of diodes, and those of line segment structures which use few diodes, but whose phase shift varies linearly in the frequency band envisaged.
  • the phase shifter is advantageously produced by the combination of two identical elementary phase shifters with diodes commonly called 0- ⁇ phase shifters, producing a structure giving four phase steps, while having only two different electrical states.
  • Such a structure gives the advantage of a simple development.
  • the phase shift of ⁇ between two positions - (O, n) and ( ⁇ , ⁇ + ⁇ ) ⁇ - is created by the field inversion obtained in the coupling zone of a line with an asymmetric field structure such as a slotted line and a line with a symmetrical field structure, such as a ribbon line or a coplanar line, also achievable in planar structure on ceramic substrate of high dielectric constant; on the other hand, the phase shift of ⁇ is obtained by changing the structure of the line ensuring the transmission of the wave.
  • the phase shifter considered comprises a first phase shifter 0- ⁇ acting in the coupling zone of two lines with different electric field structures, and a second phase shifter 0- ⁇ identical to the first, located at a determined distance first, the connection between the two phase shifters being established by two propagation lines with different electric field structures, different propagation constants and coincident or parallel propagation axes, the two lines then being located in two parallel planes and the propagation axes defining a plane orthogonal to the planes of the lines.
  • the invention proposes to produce a phase shifter giving four phase steps, also called two-bit phase shifter, with PIN diodes, using the absence of coupling which exists between two superposed parallel lines, of which one has a symmetric field structure and the other an asymmetric field structure, these two lines having parallel propagation axes belonging to the same plane orthogonal to the planes of the lines.
  • the connection between the two identical phase shifters 0-n is made by such lines, produced in planar structure on ceramic substrate, and of which another characteristic is that they have different propagation constants ⁇ 1 and ⁇ 2 , such as the difference ( ⁇ 1 - ⁇ 2 ) is constant in the selected frequency band.
  • the difference between the propagation constants can either be due to the very nature of the lines, or be obtained using high pass filters in one line and low pass filters in the other.
  • a slotted line is a propagation line consisting of an opening made in a ground plane, deposited on a dielectric substrate.
  • the dielectric support provides the mechanical strength of the metal conductors, generally produced by photoengraving or photolithography. It is a line with asymmetrical field structure.
  • the almost totality of the energy propagates in the dielectric and is concentrated between the edges of the slit.
  • the thickness of the dielectric material is linked to its nature and the width of the slotted line then determines the characteristic impedance of the line.
  • a ribbon propagation line known by the term microstrip line in the English language, comprises a dielectric plate placed between a metallic ribbon and a metallic plane, the latter called ground plane. Again, almost all of the energy is concentrated in the dielectric. It is a line with a symmetrical field structure.
  • a coplanar line is made up of a thin metal strip deposited on the surface of a dielectric 90 with two ground electrodes placed in parallel on either side of the strip. When the dielectric constant is high, most of the energy is stored in the dielectric.
  • the coplanar line is a line capable of transmitting two propagation modes represented by FIGS. 6 and 7: a mode with symmetrical field structure and a mode with asymmetric field structure.
  • the object of the invention is achieved by combining, by at least two diodes, two phase shifters with 0-n diodes as described in a patent application filed by Applicant No. 76.12999 of April 30, 1976.
  • the coupling between the line with asymmetric field structure and the line with symmetrical field structure is done at either the first phase shifter 0-n, or the second; and in these conditions the transmission of energy is done in one or the other case in a line or in the other.
  • FIG. 1 represents an example of a two-bit phase-shifter with diodes according to the invention, constituted by two 0- ⁇ microwave phase-shifters, with diodes, produced in the coupling zone of a slotted line and a ribbon line, and connected together by two lines with different electric field structure, a slotted line which extends on both sides by the slotted lines of the two phase shifters 0-n thus constituting line 3, and a ribbon line which is extended at one of its ends by the ribbon line of the second phase-shifter 0- ⁇ , thus constituting line 2.
  • the ribbon lines 1 and 2 are obtained by depositing a conductive ribbon of a certain length on a ceramic substrate 90, located above a ground plane 10.
  • the slotted line 3 is cut in this ground plane and its axis of propagation is parallel to the longitudinal axis of the ribbon lines 1 and 2, and defines with the latter a plane orthogonal to the plane of the lines.
  • the adaptation between the lines is obtained, on the one hand by the fact that the slit line 3 extends towards the ribbon line 1 with a length of X / 4, and on the other hand by a diode 9 which can be short -circuit the slotted line 3 at a distance close to X / 4 from the end of the ribbon line 2.
  • diodes At the end of the strip line 1 are placed on either side two diodes, generally of the PIN type, 4 and 5.
  • the another terminal of the diode 4 is connected to an edge 41 of the strip line 1 by a conductor 410.
  • the diodes can be fixed directly by soldering to the strip lines 1 and 2, if the dimensions thereof allow it, and connected to the quarter wave lines by a conductor.
  • a diode 8 is fixed directly by brazing to the ribbon line 2 and connected to the ribbon line 1 by a conductor 81.
  • the polarization of this diode is done by 1 ' ' through a quarter wave ribbon line 21, connected to the edge 72 of the ribbon line 2 by a conductor 212 and to the source 83 of bias voltage by a conductor 210.
  • a diode 9 is fixed by brazing under the ground plane 10 and connected by a conductor 994, to a capacitor 94, itself connected to a bias voltage source 93 by a conductor 934.
  • a coaxial jack P is generally used, the connection of which with a ribbon line is easier than with a slotted line, because of the radial arrangement of the field lines in a coaxial jack . This is why the slit line 3 is coupled at its end to a ribbon line 100, so that the energy propagating in the slit line exits through the ribbon line 100.
  • the invention makes it possible to obtain, the electrical lengths of the lines identified by ⁇ 1 and ⁇ 2 representing the zones outside the phase shifters 0-n and whose phase shift is constant.
  • the diodes 4, 5, 6, 7, 8 and 9 are mounted as indicated in the description and in Figure 1, they behave as a first approximation, according to their polarity, either as a short-circuit equivalent to a low value inductance , or as an open circuit, equivalent to a low value capacity.
  • state 0 is defined by reverse biasing the diodes 5, 6, 7, 8 and 9 and direct the diode 4.
  • the strip line 1 is connected by the conductive diode 4 to the slotted line 3, as described above.
  • the diode 8 between the two ribbon lines 1 and 2 is blocked, the energy is not transmitted in the ribbon line 2 but in the slotted line 3.
  • the electric field E o applied to the ribbon line 1, induced in the slit line 3, an electric field E 4 in a determined direction and this field is maximum, the short-circuit of the slit line being placed, as has been indicated, at a length close to a / 4 below the ribbon line.
  • the blocking of diodes 6 and 7 makes it impossible to couple the ribbon line 2 and and the slotted line 3.
  • the transmission phase is then: since the energy propagates over a length 1 of the slotted line 3, the propagation constant of which is ⁇ 2 .
  • the state ⁇ is also defined, by reverse biasing the diodes 4, 5 and 7 and direct the diodes 6, 8 and 9.
  • the first phase-shifter 0- ⁇ does not work and the diode 8 being conductive, the energy propagates from the ribbon line 1 to the ribbon line 2 to the conductive diode 6, where it is then transmitted in the slit line 3.
  • the diode 9 in conduction short-circuits the slit line 3 at ⁇ / 4 from the end of the ribbon line 2 and ensures its adaptation.
  • the electric field E 6 created in the slotted line is of the same value as E 4 , but their directions form an angle ⁇ between them.
  • the third state ⁇ works in the same way as state 0, this time with the diode 5 in conduction instead of the diode 4.
  • the electric field E 5 has a value identical to E 4 but its meaning is reversed.
  • FIG. 2 A variant of the invention is presented in FIG. 2, in which the ribbon line 2 is formed by two separate sections T 1 and T 2 ' The microwave link between these two sections is provided by a capacitor 200 of very large value. On the other hand, continuously this capacitor insulates the two sections, avoiding any parasitic propagation of the control signals of the iodines.
  • the polarization of the diode 8 takes place via an open quarter wave line 21, which on one side is connected to it by a conductor 212 and on the other is connected to the bias voltage source 83 by a conductor 210.
  • the microwave adaptation of the second section T 2 of the ribbon line 2 is ensured by an open quarter-wave line 221, placed at a distance of X / 4 from the line 2.
  • Figure 3 shows in simplified section a part of the first phase shifter of Figure 1, showing more clearly how the connections of a diode of the phase shifter are made.
  • the diode 4 for example, is on the one hand fixed by brazing to the ribbon of the quarter-wave line 44 by one of its electrodes, the same which connects it to a source of non-drawn bias voltage, and on the other hand part, connected by its other electrode to the ribbon line 1 by means of the conductor 410.
  • the quarter-wave line 44 is eliminated and the contact with the slotted line is made through the substrate 90.
  • the substrate is cut directly above the ribbon line 1.
  • a diode 4 on a base 40, by which the polarization of this diode is effected.
  • a dielectric disc 41, metallized on its two faces is brazed on the ground plane 10 and on the base of the diode.
  • the conductor 410 directly connects an electrode of the diode to an edge of the strip line 1.
  • FIG. 5 shows another example of a two-bit diode phase shifter according to the invention, constituted by two 0-n microwave microwave elements with diodes, produced in the coupling zone of a slotted line and a coplanar line, and connected between them both by a coplanar line extending at one of its ends by the coplanar line of the second phase shifter 0- ⁇ and constituting with it the line 13, and also by a slotted line divided into two parallel sections 14 and 15 located on either side of the central metal strip of the coplanar line 13.
  • the coplanar lines 12 and 13, the longitudinal axes of which coincide, are obtained by depositing a conductive tape of a certain length, lying between two ground planes 16 and 17, on a ceramic substrate.
  • the coplanar line is capable of transmitting two propagation modes, therefore it has two propagation constants: YI for the mode with symmetric field structure and Y2 for the mode with asymmetric field structure.
  • the coplanar line constituted by the central conductor 13 and the two ground planes 16 and 17, transmits the propagation mode with symmetrical field structure, it can be likened to a slotted line, constituted by the two slots 14 and 15 made between the metal conductors.
  • the adaptation between the lines is obtained by the fact that, on the one hand, the slotted line 14-15 extends towards the coplanar line 12 with a length close to X / 4 up to the conductor 30 and on the other hand, a diode 601 can short-circuit the slotted line at a distance close to X / 4 from the end of the coplanar line 13.
  • State 0 is defined by reverse biasing the diodes 201, 301, 401, 501 and 601 and direct the diode 101.
  • the coplanar line 12 is at the same potential as the ground plane 16 in the plane of the diode 101 which excites a mode with asymmetric field structure beyond this diode to the plane containing the diodes 301 and 401.
  • the transmission phase is: since the energy propagates over a length L of the line with asymmetric field structure, the propagation constant of which is ⁇ 2 .
  • the state l'mony is also defined, by reverse biasing the diodes 101, 201 and 401 and direct the diodes 301, 501 and 601. Then the first phase shifter does not work, and the diode 501 being conductive, the energy propagates from the coplanar line 12 to the coplanar line 13 to the conductive diode 601, where it is transmitted in the slotted line.
  • the transition phase is: since the energy propagates over the length L of the symmetrical field line.
  • the third state ⁇ is defined in the same way as state 0, but this time the diode 201 in conduction instead of the diode 101.
  • the coplanar line 12 is set to the potential of the ground plane 17 in the plane of the diode 201, thus exciting, beyond this plane, an asymmetrical mode in phase opposition with respect to that of the state 0.
  • the differential phase shift is:
  • the energy propagates from the coplanar line 12 to the coplanar line 13 to the plane of the diode 601.
  • the transmission phase is: and the differential phase shift with respect to state 0 is:
  • phase shifters Two embodiments of broadband two-bit diode phase shifters have thus been described, produced in a flat structure on a ceramic substrate of high dielectric constant and established in the coupling zone of two transmission lines with different electric field and axis structures. of coincident or parallel propagation, the two lines then being located in two parallel planes and the propagation axes defining a plane orthogonal to the planes of the lines.
  • These phase shifters have several advantages, in particular a small variation of the phase shift in the frequency band considered, which can have a large width.
  • the superimposition of lines with different field structures, having parallel propagation axes, makes it possible to produce phase shifters of reduced bulk.
  • the width of the strip, the width of the slot, and the thickness of the substrate are conditioned by the value of the characteristic impedance of the transmission line upstream and downstream of the plane of the diodes.
  • the line is charged by this characteristic impedance so that a maximum transmitted power is obtained with a low TOS, which may be close to 1.
  • phase shifters which are particularly reliable and have a small variation in depha wise, attenuation and the standing wave ratio in a large frequency band are advantageously used in electronically scanned antennas, being connected directly to the radiating element mainly if the latter is slotted on the substrate.
  • the radiating element mainly if the latter is slotted on the substrate.

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  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
EP79401032A 1978-12-22 1979-12-18 Diodenphasenschieber für Mikrowellen und elektronisch abtastende Antenne mit einem solchen Schieber Expired EP0013222B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7836247 1978-12-22
FR7836247A FR2445036A1 (fr) 1978-12-22 1978-12-22 Dephaseur hyperfrequence a diodes et antenne a balayage electronique comportant un tel dephaseur

Publications (2)

Publication Number Publication Date
EP0013222A1 true EP0013222A1 (de) 1980-07-09
EP0013222B1 EP0013222B1 (de) 1981-08-12

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EP79401032A Expired EP0013222B1 (de) 1978-12-22 1979-12-18 Diodenphasenschieber für Mikrowellen und elektronisch abtastende Antenne mit einem solchen Schieber

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Country Link
US (1) US4305052A (de)
EP (1) EP0013222B1 (de)
JP (1) JPS5590102A (de)
DE (1) DE2960650D1 (de)
FR (1) FR2445036A1 (de)

Cited By (2)

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EP0089483A1 (de) * 1982-03-19 1983-09-28 ANT Nachrichtentechnik GmbH Schalter für Hochfrequenzenergie
EP0335788A1 (de) * 1988-04-01 1989-10-04 Thomson-Csf Mikrowellenphasenschieber

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US3568097A (en) * 1969-11-18 1971-03-02 Texas Instruments Inc Switched line length phase shift network for strip transmission line
FR2379196A1 (fr) * 1976-04-30 1978-08-25 Thomson Csf Dephaseur hyperfrequence a diodes et antenne a balayage electronique comportant un tel dephaseur

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US3916349A (en) * 1973-07-31 1975-10-28 Itt Phase shifter for linearly polarized antenna array
FR2371786A1 (fr) * 1976-04-30 1978-06-16 Thomson Csf Dispositif de couplage de differents types de lignes pour microcircuits hyperfrequences
US4146896A (en) * 1977-05-23 1979-03-27 Thomson-Csf 180° Phase shifter for microwaves supplied to a load such as a radiating element

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Publication number Priority date Publication date Assignee Title
US3568097A (en) * 1969-11-18 1971-03-02 Texas Instruments Inc Switched line length phase shift network for strip transmission line
FR2379196A1 (fr) * 1976-04-30 1978-08-25 Thomson Csf Dephaseur hyperfrequence a diodes et antenne a balayage electronique comportant un tel dephaseur

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0089483A1 (de) * 1982-03-19 1983-09-28 ANT Nachrichtentechnik GmbH Schalter für Hochfrequenzenergie
EP0335788A1 (de) * 1988-04-01 1989-10-04 Thomson-Csf Mikrowellenphasenschieber
FR2629641A1 (fr) * 1988-04-01 1989-10-06 Thomson Csf Circuit dephaseur hyperfrequence
US4967172A (en) * 1988-04-01 1990-10-30 Thomson-Csf Microwave phase shifter circuit

Also Published As

Publication number Publication date
FR2445036B1 (de) 1982-04-16
FR2445036A1 (fr) 1980-07-18
DE2960650D1 (en) 1981-11-12
JPS5590102A (en) 1980-07-08
EP0013222B1 (de) 1981-08-12
US4305052A (en) 1981-12-08
JPS6239561B2 (de) 1987-08-24

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