EP0044758B1 - Abschlussvorrichtung für eine Mikrowellenleitung mit minimalem Stehwellenfaktor - Google Patents

Abschlussvorrichtung für eine Mikrowellenleitung mit minimalem Stehwellenfaktor Download PDF

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Publication number
EP0044758B1
EP0044758B1 EP81400958A EP81400958A EP0044758B1 EP 0044758 B1 EP0044758 B1 EP 0044758B1 EP 81400958 A EP81400958 A EP 81400958A EP 81400958 A EP81400958 A EP 81400958A EP 0044758 B1 EP0044758 B1 EP 0044758B1
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EP
European Patent Office
Prior art keywords
layer
capacitors
line
resistive layer
micro
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Expired
Application number
EP81400958A
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English (en)
French (fr)
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EP0044758A1 (de
Inventor
Sylviane Bitoune
Pierre Dufond
François Herrbach
Maurice Lecreff
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Thales SA
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Thomson CSF SA
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Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of EP0044758A1 publication Critical patent/EP0044758A1/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations
    • H01P1/268—Strip line terminations

Definitions

  • the invention relates to a transmission line termination device in which it is sought to minimize the standing wave rate originating from the reflection of microwaves on a resistive load placed at the end of the line.
  • Fréquemmen is carried out t of such fillers re- sistives, value equal to the transmission line of the characteristic impedance module in the form of an engraved deposition on an insulator, in particular an alloy layer of nickel and of chromium deposited on an insulating ceramic.
  • the first condition is easy to achieve, in the case of charges deposited by etching using a conventional adjustment process which can be erosion by sandblasting or attack by laser beam.
  • the second condition is more difficult to achieve because we observe capacitive or inductive effects from the non-negligible surface and irregularities of the nickel-chromium layer.
  • This surface cannot be reduced either in width, in length or in two dimensions without observing certain drawbacks.
  • a thinner layer of nickel-chromium, and of smaller surface, therefore more resistive cannot withstand certain thermal dissipations, which limits the power withstand of the device;
  • a layer of normal thickness but for example, narrower and longer, to present the same surface would give a discontinuity, and therefore an energy reflection, producing undesirable standing waves, at the transition point between the conductor of the microstrip line and the resistive layer.
  • the invention aims to remedy these drawbacks by seeking to correct the impedance of the resistive load, either by modifying its shape, or by adding a capacitance thereto, or finally by combining the two aforementioned means.
  • a microstrip line element comprises a dielectric substrate 1, for example made of pure alumina, in the form of an elongated and flat parallelepiped having two large faces: one of these faces is entirely metallized and constitutes the ground plane 2. The other n 'is metallized only over part of its width and constitutes a strip 3 which is none other than the upper conductor of the microstrip line.
  • This strip is produced for example by depositing successive layers of chromium, copper and gold. She is connects along a transverse straight line 11 to a layer 4 of resistive alloy constituting a termination charge.
  • This layer 4 is itself connected along a transverse straight line 12 to a metallization 5 forming a ground electrode and connected to the ground plane by a connection of negligible ohmic resistance.
  • the connection to the ground plane can be carried out either by etching a metal layer deposited on the terminal face 6 of the substrate, or by welding a flexible metal strip, not shown, or even by a metallized hole (not shown) between metallizations 5 and 2.
  • Layer 4 is constituted for example by a deposit of nickel and chromium alloy, carried out by evaporation under vacuum and reaching a few hundred angstroms (a few dezames of nancreters). It is known to obtain a layer resistance of 25 ohms per square by this method. To obtain a resistance of 50 ohms between lines 11 and 12, a deposit twice as long as wide is then carried out, that is to say in the case of an alumina substrate 0.4 mm thick, with a strip 3 of 0.35 mm in width giving substantially a microstrip line of 50 ohms, a layer 4 of 0.7 mm in length.
  • the deposit of nickel and chromium alloy can advantageously be carried out over a longer length than is necessary so that the useful length can then be easily adjusted by depositing a layer of gold on the parts. to short-circuit, by protecting, during the gilding operation, the useful part of the load using a resin layer obtained by photomasking.
  • the standing wave rate observed for a frequency of 18 GHz, is greater than 3. This is due in particular to the fact that at such frequency, the wavelength in the propagation medium (l alumina of the substrate) is 6.5 mm, length before which that of a resistive layer of 0.7 mm is by no means negligible. The resistance therefore does not act as a localized constant, which partly explains the importance of the standing wave rate observed.
  • layer 4 is given in the form of a trapezoid, the large base of which is the connection line 11 and the small base MN is connected to the metallization 5 over a length as small as possible while obtaining good return contact. mass is about 0.03 mm.
  • R (ohms) of the load is given by the formula: in which R o denotes the resistance per square (in ohms) of the resistive layer 4, h is the height of the trapezoid formed by this layer, and "In" means that we take a natural logarithm of the ratio a / b. For example, if we have: a 50 ohm load is obtained and a standing wave rate of the order of 1.7 for a frequency of 18 GHz.
  • a transverse conductive strip 30 is inserted, closer to the microstrip 3 than to the metallized layer 5, leading to two metallizations 31 and 32, which constitute the armatures of capacitors, the other armature of which is the ground plane.
  • the two metallizations measure 100 microns in width by 300 microns in length and are connected together by a band 30 of width equal to one hundred microns, distant about 200 microns from line 11.
  • the standing wave rate observed is for example 1.6 to 18 GHz.
  • the preceding characteristics are combined.
  • a standing wave rate of 1.3 is observed for a frequency of 18 GHz.
  • the invention also applies to lines of the "stripline" type where two ground planes are separated from a single central strip by two dielectric substrates.
  • the strip can be engraved on one of the substrates according to the same characteristics as those shown in fig. 2 to 5.
  • FIG. 6 one end of such a line, comprising, on a substrate 1, visible only between the metallizations, a conductive strip 3 deposited by etching between two lateral strips 61 and 62 deposited at the same time as the strip 3 and connected together by a deposit 60 of the same kind, constituting a mass return.
  • a resistive layer 4 of trapezoidal shape is deposited so as to be connected to the strip 3 on the one hand and to the deposit 60 on the other hand.
  • Capacities 63 and 64 consist of insulating deposits on the strips 61 and 62, deposits then covered with a conductive layer connected to layer 4 by connections 65 and 66, connected to layer 4 by two small pads 67 and 68 constituted by deposit of gold.
  • capacitors 63 and 64 It is also possible to use bare pads of ceramic capacitors to form the capacitors 63 and 64.

Landscapes

  • Non-Reversible Transmitting Devices (AREA)
  • Waveguides (AREA)

Claims (5)

1. Vorrichtung zum Abschließen einer Mikrowellen-Übertragungsleitung mit ebener Struktur, welche an die charakteristische Impedanz dieser Leitung angepaßt ist, mit einer Mikrobandleitung (3), die auf einem isolierenden Substrat (1) aufgebracht ist, und einer Masseelektrode, wovon wenigstens ein Teil durch eine metallisierte Schicht (5, 60) gebildet ist, welche in der Ebene der Mikrobandleitung (3) auf der Seite ihres Endes liegt, das die Abschlußvorrichtung aufnimmt, wobei diese dadurch gekennzeichnet ist, daß sie enthält:
- einen Lastwiderstand, der durch eine resistive Schicht (4) gebildet ist, welche das Ende der Mikrobandleitung (3) mit der metallisierten Schicht (5, 60) verbindet, wobei die resistive Schicht (4) eine Trapezform aufweist, dessen große Basis (11) an die Mikrobandleitung (3) angeschlossen ist und dessen kleine Basis an die metallisierte Schicht (5) angeschlossen ist,
- zwei Kondensatoren, welche den Lastwiderstand von Masse entkoppeln und auf den beiden Seiten der resistiven Schicht (4) auf derselben Seite des isolierenden Substrats (1) angeordnet sowie mit der genannten Schicht durch eine elektrische Verbindung (30, 65, 66) an einem Punkte dieser Schicht verbunden sind, der näher an der großen Basis (11) des Trapezes als an seiner kleinen Basis liegt, welche mit der metallisierten Schicht (5, 60) in Berührung ist.
2. Lastvorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die zwei Kondensatoren gebildet sind durch zwei Metallisierungen (31, 32), die auf derjenigen Fläche des Substrates (1) aufgebracht sind, welche die Mikrobandleitung (3) trägt, und durch die Masseebene (2), die auf der anderen Fläche des Substrats (1) aufgebracht ist, wobei das Material des Substrats (1) das Dielektrikum dieser Kondensatoren bildet, und daß die elektrische Verbindung (30) zwischen den Kondensatoren und der resistiven Schicht (4) durch einen Leiterstreifen gebildet ist, welcher auf dem Substrat (1) gleichzeitig mit den Metallisierungen (31, 32) aufgebracht ist.
3. Lastvorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß bei einer Übertragungsleitung, die koplanar mit ihrer Masseebene (60 + 61 + 62) ist, die zwei Kondensatoren durch zwei Ablagerungen aus isolierendem Material gebildet sind, welche von zwei metallischen Ablagerungen bedeckt sind, die zwei diskrete Kondensatoren (63, 64) bilden, welche auf diejenigen Teile (61, 62) der Masseebene aufgesetzt sind, die nahe an ihrem Ende liegen, welches die Lastvorrichtung aufnimmt, und daß die elektrische Verbindung zwischen den Kondensatoren und der resistiven Schicht (4) durch zwei Metalldrähte (65, 66) gebildet ist, die an den Kondensatoren (63, 64) und an der resistiven Schicht (4) angelötet bzw. angeschweißt sind.
4. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die resistive Schicht (4) eine Breite aufweist, die von der Mikrobandleitung (3) ausgehend zu der metallisierten Schicht (5) hin gemäß einem linearen abnehmenden Gesetz abnimmt (gerade Trapezseiten).
5. Lastvorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die resistive Schicht (4) eine Breite aufweist, die ausgehend von der Mi-. krobandleitung (3) zu der metallisierten Schicht (5) hin gemäß einem nicht linear abnehmenden Gesetz abnimmt (gekrümmte Trapezseiten).
EP81400958A 1980-07-11 1981-06-16 Abschlussvorrichtung für eine Mikrowellenleitung mit minimalem Stehwellenfaktor Expired EP0044758B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8015497A FR2486720A1 (fr) 1980-07-11 1980-07-11 Dispositif de terminaison d'une ligne de transmission, en hyperfrequence, a taux d'ondes stationnaires minimal
FR8015497 1980-07-11

Publications (2)

Publication Number Publication Date
EP0044758A1 EP0044758A1 (de) 1982-01-27
EP0044758B1 true EP0044758B1 (de) 1984-05-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP81400958A Expired EP0044758B1 (de) 1980-07-11 1981-06-16 Abschlussvorrichtung für eine Mikrowellenleitung mit minimalem Stehwellenfaktor

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US (1) US4413241A (de)
EP (1) EP0044758B1 (de)
DE (1) DE3163615D1 (de)
FR (1) FR2486720A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525383A1 (fr) * 1982-04-16 1983-10-21 Cables De Lyon Geoffroy Delore Resistances en constantes reparties pour charges a forte dissipation en hyperfrequence
US4670723A (en) * 1985-03-18 1987-06-02 Tektronix, Inc. Broad band, thin film attenuator and method for construction thereof
CA1323911C (en) * 1988-10-14 1993-11-02 Diethard Hansen Reflection-free termination of a tem-waveguide
WO1990009040A1 (fr) * 1989-02-02 1990-08-09 Fujitsu Limited Terminaison de resistance pelliculaire
FR2779577B1 (fr) * 1998-06-09 2001-01-05 Deti Composant passif hyperfrequence a charge resistive comportant des elements d'adaptation hyperfrequence integres
US6600384B2 (en) 2001-05-18 2003-07-29 Endwave Corporation Impedance-compensating circuit
GB2383199B (en) * 2001-12-11 2005-11-16 Marconi Optical Components Ltd Transmission line structures
US20040085150A1 (en) * 2002-10-30 2004-05-06 Dove Lewis R. Terminations for shielded transmission lines fabricated on a substrate
DE10350033A1 (de) * 2003-10-27 2005-05-25 Robert Bosch Gmbh Bauelement mit Koplanarleitung
KR20140037456A (ko) * 2012-09-18 2014-03-27 한국전자통신연구원 소형 도파관 종단기
JP6279189B2 (ja) * 2016-01-12 2018-02-14 三菱電機株式会社 終端器及び高周波回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582833A (en) * 1969-12-23 1971-06-01 Bell Telephone Labor Inc Stripline thin-film resistive termination wherein capacitive reactance cancels out undesired series inductance of resistive film
JPS5132946B1 (de) * 1970-05-04 1976-09-16
US3678417A (en) * 1971-07-14 1972-07-18 Collins Radio Co Planar r. f. load resistor for microstrip or stripline
DE2421784C3 (de) * 1974-05-06 1980-07-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Streckengerät für Übertragungsstrecken mit Koaxialkabeln zur Übertragung digitaler Signale
DE2634812C2 (de) * 1976-08-03 1983-05-05 Spinner-GmbH Elektrotechnische Fabrik, 8000 München HF-Leistungsabschlußwiderstand
US4118112A (en) * 1976-12-03 1978-10-03 Xerox Corporation Method for reducing power dissipation in tapered resistor devices
JPS5376728A (en) * 1976-12-20 1978-07-07 Toshiba Corp Microwave circuit
JPS5930323B2 (ja) * 1976-12-27 1984-07-26 日本電気株式会社 ストリツプ線路用無反射終端

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Publication number Publication date
DE3163615D1 (en) 1984-06-20
EP0044758A1 (de) 1982-01-27
US4413241A (en) 1983-11-01
FR2486720A1 (fr) 1982-01-15
FR2486720B1 (de) 1984-08-10

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