EP0044758A1 - Abschlussvorrichtung für eine Mikrowellenleitung mit minimalem Stehwellenfaktor - Google Patents

Abschlussvorrichtung für eine Mikrowellenleitung mit minimalem Stehwellenfaktor Download PDF

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Publication number
EP0044758A1
EP0044758A1 EP81400958A EP81400958A EP0044758A1 EP 0044758 A1 EP0044758 A1 EP 0044758A1 EP 81400958 A EP81400958 A EP 81400958A EP 81400958 A EP81400958 A EP 81400958A EP 0044758 A1 EP0044758 A1 EP 0044758A1
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EP
European Patent Office
Prior art keywords
resistive layer
ground
conductor
layer
resistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP81400958A
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English (en)
French (fr)
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EP0044758B1 (de
Inventor
Sylviane Bitoune
Pierre Dufond
François Herrbach
Maurice Lecreff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
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Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
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Publication of EP0044758B1 publication Critical patent/EP0044758B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations
    • H01P1/268—Strip line terminations

Definitions

  • the invention relates to a transmission line termination device in which it is sought to minimize the standing wave rate originating from the reflection of microwaves on a resistive load placed at the end of the line.
  • Such resistive loads are frequently produced, of value equal to the modulus of the characteristic impedance of the transmission line, in the form of a deposit etched on an insulator, in particular a layer of nickel and chromium alloy deposited. -on an insulating ceramic.
  • the first condition is easy to achieve, in the case of charges deposited by etching using a conventional adjustment process which can be erosion by sandblasting or attack by laser beam.
  • the second condition is more difficult to achieve because we observe capacitive or inductive effects from the non-negligible surface and irregularities of the nickel-chromium layer.
  • This surface cannot be reduced either in width, in length or in two dimensions without observing certain drawbacks.
  • a thinner layer of nickel-chromium therefore more resistive and therefore of smaller surface cannot withstand certain heat dissipation, which limits the power withstand of the device;
  • a layer of normal thickness but for example, narrower and longer, to present the same surface would give a discontinuity, and therefore an energy reflection, producing undesirable standing waves, at the transition point between the conductor of the microstrip line and the resistive layer.
  • the invention aims to remedy these drawbacks by seeking to correct the impedance of the resistive load, either by modifying its shape, or by adding a capacitance thereto, or finally by combining the two aforementioned means.
  • the device according to the invention comprises a conductor constituted by a metal strip deposited on an insulating substrate and at least one ground electrode, the metal strip being connected at its end to a resistive layer itself connected to ground, the device being of the type in which the resistive layer is of decreasing width between its points of connection to the metal strip and to ground, or in which the inherent inductance of the resistive layer is compensated, in the operating frequency range, by at least a conductive deposit capacitively coupled with this ground electrode and electrically connected to this resistive layer.
  • the resistive layer is interrupted by a transverse conductive strip located closer to the conductor than to the ground connection point, two conductive deposits being formed on the substrate on either side of the long sides of the trapezoid and interconnected by the conductive strip.
  • a microstrip line element comprises a dielectric substrate 1, for example made of pure alumina, in the form of an elongated and flat parallelepiped having two large faces: one of these faces is entirely metallized and constitutes the ground plane 2. The other is metallized only over part of its width and constitutes a strip 3 which is none other than the upper conductor of the microstrip line.
  • This strip is produced for example by depositing successive layers of chromium, copper and gold. It is connected along a transverse straight line 11 to a layer 4 of resistive alloy constituting a termination charge. This layer 4 is itself connected along a transverse straight line 12 to a metallization 5 connected to the ground plane by a connection of negligible ohmic resistance.
  • the connection to the ground plane can be carried out either by etching the end face 6 of the substrate, or by welding a flexible metal strip, not shown, or even by a metallized hole (not shown) between the metallizations 5 and 2 .
  • Layer 4 is constituted for example by a deposit of nickel and chromium alloy, carried out by evaporation under vacuum and reaching a few hundred angstroms. It is known to obtain a layer resistance of 25 ohms per square by this method. To obtain a resistance of 50 ohms between lines 11 and 12, a deposit twice as long as wide is then carried out, that is to say in the case of an alumina substrate 0.4 mm thick, with a strip 3 of 0.35 mm in width giving substantially a microstrip line of 50 ohms, a layer 4 of 0.7 mm in length.
  • the deposit of nickel and chromium alloy can advantageously be carried out over a longer length than is necessary so that the useful length can then be easily adjusted by depositing a layer of gold on the parts. to short-circuit, by protecting, during the gilding operation, the useful part of the load using a resin layer obtained by photomasking.
  • the standing wave rate observed for a frequency of 18 GHz, is greater than 3. This is due in particular to the fact that at such frequency, the wavelength in the propagation medium (l alumina of the substrate) is 6.5 mm, length before which that of a resistive layer of 0.7 mm is by no means negligible. The resistance therefore does not act as a localized constant, which partly explains the importance of the standing wave rate observed.
  • layer 4 is given the shape of a trapezoid, the large base of which is the connection line 11 and the small base MN is connected to the metallization 5 over a length as small as possible while obtaining a good ground return contact, ie approximately 0.03 mm.
  • the resistance R (ohms) of the load is given by the formula: in which R denotes the resistance per square (in ohms) of the resistive layer 4, h is the height of the trapezoid formed by this layer, and "ln" means that we take the natural logarithm of the ratio a / b.
  • a transverse conductive strip 30 is inserted, leading to two metallizations 31 and 32, which constitute the armatures of capacitors whose other armature is the ground plane.
  • the two metallizations measure 100 microns in width by 300 microns in length and are connected together by a band 30 of width equal to one hundred microns, distant about 200 microns from line 11.
  • the standing wave rate observed is for example 1.6 to 18 GHz.
  • a standing wave rate of 1.3 is observed for a frequency of 18 GHz.
  • the decrease in width is all the smaller for the strip 4 as one moves away from the line 11 separating the strip 3 from the resistive load.
  • the invention also applies to lines of the "stripline" type where two ground planes are separated from a single central strip by two dielectric substrates.
  • the strip can be etched on one of the substrates according to the same characteristics as those found in Figures 2 to 3.
  • FIG. 6 an end of such a line, comprising, on a substrate 1, visible only between the metallizations, a conductive strip 3 deposited by etching entered two lateral strips 61 and 62 deposited by etching between two lateral bands 61 and 62 deposited at the same time as the band 3 and connected together by a deposit 60 of the same kind, constituting a mass return.
  • a resistive layer 4 of trapezoidal shape is deposited so as to be connected to the strip 3 on the one hand and to the deposit 60 on the other hand.
  • Capacities 63 and 64 consist of insulating deposits on the strips 63 and 64, deposits then covered with a conductive layer connected to the layer 4 by connections 65 and 66, connected to layer 4 by two small pads 67 and 68 constituted by deposit of gold.
  • capacitors 63 and 64 It is also possible to use bare pads of ceramic capacitors to form the capacitors 63 and 64.
EP81400958A 1980-07-11 1981-06-16 Abschlussvorrichtung für eine Mikrowellenleitung mit minimalem Stehwellenfaktor Expired EP0044758B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8015497 1980-07-11
FR8015497A FR2486720A1 (fr) 1980-07-11 1980-07-11 Dispositif de terminaison d'une ligne de transmission, en hyperfrequence, a taux d'ondes stationnaires minimal

Publications (2)

Publication Number Publication Date
EP0044758A1 true EP0044758A1 (de) 1982-01-27
EP0044758B1 EP0044758B1 (de) 1984-05-16

Family

ID=9244122

Family Applications (1)

Application Number Title Priority Date Filing Date
EP81400958A Expired EP0044758B1 (de) 1980-07-11 1981-06-16 Abschlussvorrichtung für eine Mikrowellenleitung mit minimalem Stehwellenfaktor

Country Status (4)

Country Link
US (1) US4413241A (de)
EP (1) EP0044758B1 (de)
DE (1) DE3163615D1 (de)
FR (1) FR2486720A1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525383A1 (fr) * 1982-04-16 1983-10-21 Cables De Lyon Geoffroy Delore Resistances en constantes reparties pour charges a forte dissipation en hyperfrequence
EP0195649A2 (de) * 1985-03-18 1986-09-24 Tektronix, Inc. Dünnschichtiges und breitbandiges Dämpfungsglied und Verfahren zu dessen Herstellung
EP0363831A1 (de) * 1988-10-14 1990-04-18 Asea Brown Boveri Ag Reflexionsfreier Abschluss eines TEM-Wellenleiters
EP0424536A1 (de) * 1989-02-02 1991-05-02 Fujitsu Limited Filmförmiger abschlusswiderstand für microstripleitung
FR2779577A1 (fr) * 1998-06-09 1999-12-10 Deti Composant passif hyperfrequence a charge resistive comportant des elements d'adaptation hyperfrequence integres

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6600384B2 (en) 2001-05-18 2003-07-29 Endwave Corporation Impedance-compensating circuit
GB2383199B (en) * 2001-12-11 2005-11-16 Marconi Optical Components Ltd Transmission line structures
US20040085150A1 (en) * 2002-10-30 2004-05-06 Dove Lewis R. Terminations for shielded transmission lines fabricated on a substrate
DE10350033A1 (de) * 2003-10-27 2005-05-25 Robert Bosch Gmbh Bauelement mit Koplanarleitung
KR20140037456A (ko) * 2012-09-18 2014-03-27 한국전자통신연구원 소형 도파관 종단기
WO2017122269A1 (ja) * 2016-01-12 2017-07-20 三菱電機株式会社 終端器及び高周波回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582833A (en) * 1969-12-23 1971-06-01 Bell Telephone Labor Inc Stripline thin-film resistive termination wherein capacitive reactance cancels out undesired series inductance of resistive film
FR2270730A1 (de) * 1974-05-06 1975-12-05 Siemens Ag
US4118112A (en) * 1976-12-03 1978-10-03 Xerox Corporation Method for reducing power dissipation in tapered resistor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132946B1 (de) * 1970-05-04 1976-09-16
US3678417A (en) * 1971-07-14 1972-07-18 Collins Radio Co Planar r. f. load resistor for microstrip or stripline
DE2634812C2 (de) * 1976-08-03 1983-05-05 Spinner-GmbH Elektrotechnische Fabrik, 8000 München HF-Leistungsabschlußwiderstand
JPS5376728A (en) * 1976-12-20 1978-07-07 Toshiba Corp Microwave circuit
JPS5930323B2 (ja) * 1976-12-27 1984-07-26 日本電気株式会社 ストリツプ線路用無反射終端

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582833A (en) * 1969-12-23 1971-06-01 Bell Telephone Labor Inc Stripline thin-film resistive termination wherein capacitive reactance cancels out undesired series inductance of resistive film
FR2270730A1 (de) * 1974-05-06 1975-12-05 Siemens Ag
US4118112A (en) * 1976-12-03 1978-10-03 Xerox Corporation Method for reducing power dissipation in tapered resistor devices

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525383A1 (fr) * 1982-04-16 1983-10-21 Cables De Lyon Geoffroy Delore Resistances en constantes reparties pour charges a forte dissipation en hyperfrequence
EP0092137A1 (de) * 1982-04-16 1983-10-26 LES CABLES DE LYON Société anonyme dite: Verteilte Widerstände für Hochleistungslasten im Mikrowellenbereich
US4456894A (en) * 1982-04-16 1984-06-26 Les Cables De Lyon Distributed-constant resistance for use as a high dissipation load at hyperfrequencies
EP0195649A2 (de) * 1985-03-18 1986-09-24 Tektronix, Inc. Dünnschichtiges und breitbandiges Dämpfungsglied und Verfahren zu dessen Herstellung
EP0195649A3 (de) * 1985-03-18 1988-08-10 Tektronix, Inc. Dünnschichtiges und breitbandiges Dämpfungsglied und Verfahren zu dessen Herstellung
EP0363831A1 (de) * 1988-10-14 1990-04-18 Asea Brown Boveri Ag Reflexionsfreier Abschluss eines TEM-Wellenleiters
US5055806A (en) * 1988-10-14 1991-10-08 Asea Brown Boveri Ltd. Reflection-free termination of a tem waveguide
EP0424536A1 (de) * 1989-02-02 1991-05-02 Fujitsu Limited Filmförmiger abschlusswiderstand für microstripleitung
EP0424536A4 (en) * 1989-02-02 1991-07-03 Fujitsu Limited Film resistor terminator
FR2779577A1 (fr) * 1998-06-09 1999-12-10 Deti Composant passif hyperfrequence a charge resistive comportant des elements d'adaptation hyperfrequence integres
WO1999065104A1 (fr) * 1998-06-09 1999-12-16 Deti (Societe Anonyme) Composant passif hyperfrequence a charge resistive

Also Published As

Publication number Publication date
DE3163615D1 (en) 1984-06-20
FR2486720A1 (fr) 1982-01-15
US4413241A (en) 1983-11-01
FR2486720B1 (de) 1984-08-10
EP0044758B1 (de) 1984-05-16

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