EP0013222B1 - Diodenphasenschieber für Mikrowellen und elektronisch abtastende Antenne mit einem solchen Schieber - Google Patents

Diodenphasenschieber für Mikrowellen und elektronisch abtastende Antenne mit einem solchen Schieber Download PDF

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Publication number
EP0013222B1
EP0013222B1 EP79401032A EP79401032A EP0013222B1 EP 0013222 B1 EP0013222 B1 EP 0013222B1 EP 79401032 A EP79401032 A EP 79401032A EP 79401032 A EP79401032 A EP 79401032A EP 0013222 B1 EP0013222 B1 EP 0013222B1
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line
phase
phase changer
diode
diodes
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EP79401032A
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English (en)
French (fr)
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EP0013222A1 (de
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Michel Baril
Vu San Hoang
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Thales SA
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Thomson CSF SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/185—Phase-shifters using a diode or a gas filled discharge tube

Definitions

  • the present invention relates to a microwave phase shifter with diodes. More particularly, this phase shifter can be produced in a flat structure on a substrate of high dielectric constant and is capable of giving four phase states.
  • phase shifter there are different kinds of diode phase shifter, using those of the PIN type, such as disturbance phase shifters which are characterized by high power handling and wide bandwidth and line section phase shifters, such as the switching phase shifter, which characterized compared to the previous ones by a smaller footprint and constant losses as a function of the phase shift.
  • disturbance phase shifters which are characterized by high power handling and wide bandwidth
  • line section phase shifters such as the switching phase shifter
  • phase shifters pertaining to the prior art, involving propagation line lengths, therefore have phase shift, loss and TOS characteristics varying as a function of frequency.
  • the object of the invention is a microwave phase shifter with PIN diodes, the structure of which makes it possible to avoid the drawbacks previously mentioned.
  • This structure combines the advantages of perburbation structures which conveniently give constant phases, but at the cost of a large number of diodes, and those of line segment structures which use few diodes, but whose phase shift varies linearly in the frequency band envisaged.
  • the phase shifter is advantageously produced by the combination of two identical elementary phase shifters with diodes commonly called O- ⁇ phase shifters, as they are known for example from document FR ⁇ A ⁇ 2379 196, producing a structure giving four steps phase, while presenting only two different electrical states.
  • O- ⁇ phase shifters diodes commonly called O- ⁇ phase shifters
  • the phase shift of 7 r between two positions - (O, ⁇ ) and ( ⁇ , ⁇ + ⁇ ) - is created by the invention of the field obtained in the coupling zone of a line with an asymmetric field structure such as a slit line from a line with a symmetrical field structure, such as a ribbon line or a coplanar line, also achievable in planar structure on ceramic substrate of high dielectric constant; on the other hand, the phase shift of 7 r is obtained by changing the structure of the line ensuring the transmission of the wave.
  • the phase shifter considered comprises a first phase shifter O- ⁇ acting in the coupling zone of two lines with different electric field structures, and a second phase shifter O- ⁇ identical to the first, located at a determined distance first, the connection between the two phase shifters being established by two propagation lines with different electric field structures, different propagation constants and coincident or parallel propagation axes, the two lines then being located in two parallel planes and the propagation axes defining a plane orthogonal to the planes of the lines.
  • the invention proposes to produce a phase shifter giving four phase steps, also called two-bit phase shifter, with PIN diodes, using the absence of coupling which exists between two superposed parallel lines, of which one has a symmetric field structure and the other an asymmetric field structure, these two lines having parallel propagation axes belonging to the same plane orthogonal to the planes of the lines.
  • the connection between the two identical phase shifters O- ⁇ is made by such lines, produced in planar structure on ceramic substrate, and of which another characteristic is that they have different propagation constants ⁇ 1 , and P2, such that the difference ( ⁇ 1 , - ⁇ 2 ) is constant in the selected frequency band.
  • the difference between the propagation constants may well be due to the very nature of the lines, or may be obtained using high pass filters in one line and low pass filters in the other.
  • a slotted line is a propaga line tion consisting of an opening in a ground plane, deposited on a dielectric substrate.
  • the dielectric support provides the mechanical strength of the metal conductors, generally produced by photoengraving or photolithography. It is a line with asymmetrical field structure.
  • a ribbon propagation line known by the term microstrip line in the English language, comprises a dielectric plate placed between a metallic ribbon and a metallic plane, the latter called ground plane.
  • a metallic plane the latter called ground plane.
  • a coplanar line is made up of a thin metal strip deposited on the surface of a dielectric 90 with two ground electrodes placed in parallel on either side of the strip. When the dielectric constant is high, most of the energy is stored in the dielectric.
  • the coplanar line is a line capable of transmitting two propagation modes represented by FIGS. 6 and 7: a mode with symmetrical field structure and a mode with asymmetric field structure.
  • the object of the invention is achieved by combining, by at least two diodes, two phase shifters with O- ⁇ diodes as described in document FR-A-2 379 196.
  • the coupling between the line to be asymmetrical field structure and the line symmetrical field structure is at either of the first phase shifter 0- 7 r or the second; and in these conditions the transmission of energy is done in one or the other case in a line or in the other.
  • Figure 1 shows an example of phase shifter to two bit diodes according to the invention, comprising two phase shifters 0- 7 r microwave diodes, realized in the coupling area of a slot line and a strip line , and linked together by two lines with different electric field structures, a slotted line which extends on both sides by the slotted lines of the two O- ⁇ phase shifters thus constituting line 3, and a ribbon line which is extended at one of its ends by the ribbon line of the second phase shifter O- ⁇ , thus constituting line 2.
  • the ribbon lines 1 and 2 are obtained by depositing a conductive ribbon of a certain length on a ceramic substrate 90, located above a ground plane 10.
  • the line to slot 3 is cut in this ground plane and its axis of propagation is parallel to the longitudinal axis of the ribbon lines 1 and 2, and defines with the latter a plane orthogonal to the plane of the lines.
  • the adaptation between the lines is obtained, on the one hand by the fact that the slit line 3 extends towards the ribbon line 1 with a length of ⁇ / 4, and on the other hand by a diode 9 which can be short -circuit the slotted line 3 at a distance close to A / 4 from the end of the ribbon line 2.
  • diodes At the end of the strip line 1 are placed on either side two diodes, generally of the PIN type, 4 and 5.
  • the another terminal of the diode 4 is connected to an edge 41 of the strip line 1 by a conductor 410.
  • the diodes can be fixed directly by soldering to the strip lines 1 and 2, if the dimensions thereof allow it, and connected to the quarter wave lines by a conductor.
  • a diode 8 is fixed directly by brazing to the ribbon line 2 and connected to the ribbon line 1 by a conductor 81.
  • the polarization of this diode is done by means of a quarter-wave ribbon line 21, connected to the edge 72 of the ribbon line 2 by a conductor 212 and to the voltage source 83 of polarization by a conductor 210.
  • a diode 9 is fixed by brazing under the ground plane 10 and connected by a conductor 994, to a capacitor 94, itself connected to a bias voltage source 93 by a conductor 934.
  • a coaxial socket P is generally used, the connection of which with a ribbon line is easier than with a slotted line, because of the radial arrangement of the field lines in a coaxial socket. This is why the slit line 3 is coupled at its end to a ribbon line 100, so that the energy propagating in the slit line exits through the ribbon line 100.
  • state 0 is defined by reverse biasing the diodes 5, 6, 7, 8 and 9 and direct the diode 4.
  • the strip line 1 is connected by the conductive diode 4 to the slotted line 3, as described above.
  • the diode 8 between the two ribbon lines 1 and 2 is blocked, the energy is not transmitted in the ribbon line 2 but in the slotted line 3.
  • the electric field É o applied to the line ribbon 1, induced in the slit line 3, an electric field E4, in a determined direction and this field is maximum, the short-circuit of the tent line being placed, as has been indicated, at a length close to ⁇ / 4 below the ribbon line.
  • the blocking of diodes 6 and 7 makes it impossible to couple the ribbon line 2 and the slotted line 3.
  • the transmission phase is then: since the energy propagates over a length 1 of the slotted line 3, the propagation constant of which is ⁇ 2 .
  • the state ⁇ in reverse biasing the diodes 4, 5 and 7 and direct diodes 6, 8 and 9.
  • the first phase shifter 0- 7 r does not work and the diode 8 is conductive , the energy propagates from the ribbon line 1 to the ribbon line 2 to the conductive diode 6, where it is then transmitted in the slit line 3.
  • the diode 9 in conduction short-circuits the slit line 3 to ⁇ / 4 from the end of the ribbon line 2 and ensures its adaptation.
  • the electric field E 6 created in the slotted line is of the same value as E 4 , but their directions form an angle between them (p.
  • the third state 7r works in the same way as state 0, this time with the diode 5 in conduction instead of the diode 4.
  • the electric field Eg has a value identical to E 4 but its meaning is reversed.
  • FIG. 2 A variant of the invention is presented in FIG. 2, in which the ribbon line 2 is formed by two distinct sections T 1 and T 2 .
  • the microwave link between this two sections is provided by a capacitor 200 of very large value.
  • this capacitor insulates the two sections, avoiding any spurious propagation of the diode control signals.
  • the polarization of the diode 8 takes place via an open quarter wave line 21, which on one side is connected to it by a conductor 212 and on the other is connected to the bias voltage source 83 by a conductor 210.
  • the microwave frequency adaptation of the second section T, of the ribbon line 2 is ensured by an open quarter wave line 221, placed at a distance of ⁇ / 4 from the line 2.
  • Figure 3 shows in simplified section a part of the first phase shifter of Figure 1, showing more clearly how are made the connections of a phase shifter diode.
  • the diode 4 for example, is on the one hand fixed by brazing to the ribbon of the quarter-wave line 44 by one of its electrodes, the same which connects it to a source of non-drawn bias voltage, and on the other hand part, connected by its other electrode to the ribbon line 1 by means of the conductor 410 .
  • the quarter-wave line 44 is eliminated and the contact with the slotted line is made through the substrate 90.
  • the substrate is cut directly above the ribbon line 1.
  • a diode 4 on a base 40, by which the polarization of this diode takes place.
  • a dielectric disc 41 metallized on its two faces is brazed on the ground plane 10 and on the base of the diode.
  • the conductor 410 directly connects an electrode of the diode to an edge of the strip line 1.
  • phase shifting two bits following the diodes invention consisting of two elements 0- 7 r microwave diodes, realized in the coupling area of a slot line and a coplanar line, and interconnected both by a coplanar line extending at one of its ends by the coplanar line of the second phase shifter O- T r and constituting with it line 13, and also by a slotted line divided into two parallel sections 14 and 15 located on either side of the central metal strip of the coplanar line 13.
  • the coplanar lines 12 and 13, the longitudinal axes of which coincide, are obtained by depositing a conductive tape of a certain length, lying between two ground planes 16 and 17, on a ceramic substrate.
  • the coplanar line is capable of transmitting two modes of propagation, therefore it has two propagation constants: y, for the mode with symmetric field structure and ⁇ 2 for the mode with asymmetric field structure.
  • the coplanar line formed by the central conductor 13 and the two ground planes 16 and 1.7, transmits the propagation mode with symmetrical field structure, it can be likened to a slotted line, constituted by the two slots 14 and 15 made between the metal conductors.
  • the adaptation between the lines is obtained by the fact that, on the one hand, the slotted line 14-15 extends towards the coplanar line 12 with a length close to ⁇ / 4 up to the conductor 30 and on the other hand, a diode 601 can short-circuit the slotted line at a distance close to ⁇ / 4 from the end of the coplanar line 13.
  • State 0 is defined by reverse biasing the diodes 201, 301, 401, 501 and 601 and direct diode 101.
  • the coplanar line 12 is at the same potential as the ground plane 16 in the plane of the diode 101 which excites a mode with asymmetric field structure beyond this diode to the plane containing the diodes 301 and 401.
  • the transmission phase is: since the energy propagates over a length L of the line with an asymmetric field structure, the propagation constant of which is y 2 .
  • the transition phase is: since the energy propagates over the length L of the symmetrical field line.
  • the third state ⁇ is defined in the same way as state 0, but this time the diode 201 in conduction instead of the diode 101.
  • the coplanar line 12 is set to the potential of the ground plane 17 in the plane of diode 201, thus exciting, beyond this plane, an asymmetrical mode in phase opposition with respect to that of state 0.
  • the differential phase shift is:
  • the energy propagates from the coplanar line 12 to the coplanar line 13 to the plane of the diode 601.
  • the transmission phase is: and the differential phase shift with respect to state 0 is:
  • rp ⁇ / 2 by using, as connection between the two phase shifters 0-n, lines with different electric field structures of length 1, and whose propagation constants ⁇ 1 and ⁇ 2 (or ⁇ 1 and ⁇ 2 ) are as
  • phase shifters Two embodiments of broadband two-bit diode phase shifters have thus been described, produced in a flat structure on a ceramic substrate of high dielectric constant and established in the coupling zone of two transmission lines with different electric field and axis structures. of coincident or parallel propagation, the two lines then being located in two parallel planes and the propagation axes defining a plane orthogonal to the planes of the lines.
  • These phase shifters have several advantages, in particular a small variation of the phase shift in the frequency band considered, which can have a large width.
  • the superimposition of lines with different field structures, having parallel propagation axes, makes it possible to produce phase shifters of reduced bulk.
  • the width of the strip, the width of the slot, and the thickness of the substrate are conditioned by the value of the characteristic impedance of the transmission line upstream and downstream of the plane of the diodes.
  • the line is charged by this characteristic impedance so that a maximum transmitted power is obtained with a low TOS, which may be close to 1.
  • phase shifters which are particularly reliable and have a small variation in phase shift, attenuation and the standing wave ratio in a large frequency band, are advantageously.
  • used in electronic scanning antennas being connected directly to the radiating element mainly if the latter is slit on the substrate.
  • the radiating element mainly if the latter is slit on the substrate.

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  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Claims (17)

1. Ultrahochfrequenz-Dioden-Phasenschieber mit mindestens einem Ultrahochfrequenz-Dioden-Phasenschieber 0-π in Form einer Aufbauebene auf einem keramischen Substrat, dadurch gekennzeichnet, dass er einen zweiten Phasenschieber O-π enthält, der mit dem ersten durch mindestens zwei Ubertragungsleitungen mit verschiedenen elektrischen Feldern von der Länge I verbunden ist, deren Ausbreitungsachsen zusammengelegt oder parallel und übereinandergelegt angeordnet sind, wobei die Leitungen die Ausbreitungskonstanten β1, and β2 haben, die sich voneinander unterscheiden, indem ihr Unterschied (β1 - β2) im benützten Frequenzband konstant ist, und wobei mindestens eine Diode an einem der Enden einer jeden Leitung vorgesehen ist mit Mitteln zur Kommutierung ihres Zustands.
2. Phasenschieber gemäss Anspruch 1, dadurch gekennzeichnet, das er zwei O-n Ultrahochfrequenz-Dioden-Phasenschieber hat, von denen jeder eine Streifenleitung und eine Rinnenleitung mit parallelen, übereinanderliegenden Ausbreitungsachsen, getrennt durch ein dielektrisches Substrat (90) einschliesst, wobei die beiden Phasenschieber untereinander verbunden sind, einerseits durch einen Abschnitt einer hohlen Rinnenleitung in der Massenebene, die sich an jedem Ende durch die Rinnenleitung der beiden Phasenschieber verlängert, wobei eine Diode (9) auf der Massenebene direkt mit einer ihrer Elektroden befestigt ist, und die andere Elektrode durch eine Leitung (994) mit einem Kondensator (94) verbunden ist, der in Verbindung mit einer polarisierten Spannungsquelle (93) steht, und andererseits durch eine Streifenleitung, die auf dem keramischen Substrat (90) aufgebracht ist, deren eines Ende sich durch die Streifenleitung des zweiten Phasenschiebers O-π verlängert, und an deren anderem Ende eine Diode (8) mit einer ihrer Elektroden angebracht ist, wobei die andere Elektrode auf der Streifenleitung des ersten Phasenschiebers O-π durch eine Leitung (81) befestigt ist, und wobei die Diode mit Hilfe einer Viertelwellenlängen-Streifenleitung (21) polarisiert wird, die auf einer Seite durch eine Leitung (212) mit der Streifenleitung (2) und auf der anderen Seite durch eine Leitung (210) mit einer Polarisierten Spannungsquelle (83) verbunden ist.
3. Phasenschieber gemäss Anspruch 2, dadurch gekennzeichnet, dass die Diode (9) mit einem Abstand von A/4 am Ende des zweiten Phasenschiebers O-π plaziert ist.
4. Phasenschieber gemäss Anspruch 2, dadurch gekennzeichnet, dass sich die Rinnenleitung (3) in einer Länge verlängert, die einem Viertel der Wellenlänge unter der Streifenleitung (1) gleicht.
5. Phasenschieber gemäss Anspruch 2, dadurch gekennzeichnet, dass die Diode (8), welche die Übertragung elektrischer Energie von dem ersten Phasenschieber 0-7r auf die eine oder die andere der zwei Übertragungsleitungen sichert, durch Auflöten direkt auf der Streifenleitung (1) des ersten Phasenschiebers O-π befestigt ist und durch eine Leitung mit der Streifenleitung (2) verbunden ist.
6. Phasenschieber gemäss einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass er eine Streifenleitung (100) enthält, die an ihrem Ausgangsende mit der Rinnenleitung (3) des zweiten Phasenschiebers O-π verbunden ist.
7. Phasenschieber gemäss einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass die Streifenleitung (2), welche die beiden Phasenschieber O-π verbindet, in zwei Abschnitte T1 und T2 untergeteilt ist, die durch einen Kondensator (200) untereinander verbunden sind, wobei eine offene Viertelwellenlängen-Leitung (221) in einer Entfernung 1/4 der Leitung (2) plaziert ist.
8. Phasenschieber gemäss Anspruch 1, dadurch gekennzeichnet, dass er zwei Phasenschieber O-π enthält, wovon ein jeder eine koplanare Leitung und eine Rinnenleitung hat, die auf der gleichen Seite eines keramischen Substrats mit parallelen Ausbreitungsachsen zwischen zwei Massenebenen (16 und 17) aufgebracht sind, wobei die beiden Phasenschieber 0-7T untereinander verbunden sind, einerseits durch einen Abschnitt einer Rinnenleitung (14-15), wobei eine Diode (601) direkt auf eine der Massenebenen mit einer ihrer Elektroden befestigt ist, die sie mit einer polarisierten Spannungsquelle verbindet, und die andere Elektrode mit einer zweiten Massenebene durch eine Leitung (604) verbunden ist, und wobei die Diode (601) die Rinnenleitung (14-15) kurzschliesst, und andererseits durch einen Abschnitt der koplanaren Leitung (13), deren eines Ende sich durch die Koplanare Leitung des zweiten Phasenschiebers O-π verlängert; und an deren anderem Ende eine Diode (501) durch die gleiche Elektrode angeschlossen ist, die sie mit einer polarisierten Spannungsquelle verbindet, während die andere Elektrode sie mit der koplanaren Leitung (12) des ersten Phasenschiebers O-π verbindet.
9. Phasenschieber gemäss Anspruch 8, dadurch gekennzeichnet, dass die Diode (601) in einer Entfernung, die einem Viertel der Wellenlänge gleicht, am Ende des zweiten Phasenschiebers O-π plaziert ist.
10. Phasenschieber gemäss einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass eine jede der Dioden direkt auf einem Träger (40) angebracht ist, der in den Rinnen der Rinnenleitungen befestigt ist, verbunden mit den Streifenleitungen und den koplanaren Leitungen durch eine ihrer Elektroden, während die andere Elektrode einer Diode durch eine Leitung (410) durch das Substrat der Streifenleitungen und der koplanaren Leitungen hindurch mit einer polarisierten Spannungsquelle verbunden ist.
11. Phasenschieber gemäss einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass eine der Dioden des ersten Phasenschiebers 0-7T direkt polarisiert wird, während alle anderen Dioden des Zwei-Bits-Phasenschiebers invertiert polarisiert werden und so den Phasenzustand 0 definieren.
12. Phasenschieber gemäss einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass eine der zwei Dioden des ersten Phasenschiebers O-π der im Zustand der Phase 0 invertiert polarisiert wird, direkt polarisiert wird, während alle anderen Dioden des Zwei-Bits-Phasenschiebers invertiert polarisiert werden und so den Phasenzustand 7t definieren.
13. Phasenschieber gemäss einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass die zwei Dioden des ersten Phasenschiebers O-π und eine der beiden Dioden des zweiten Phasenschiebers 0-7r invertiert polarisiert werden, während all anderen Dioden des Zwei-Bits-Phasenschiebers direkt polarisiert werden und die Ausbreitungskonstanten β1 und β2 der zwei Verbindungslietungen zwischen den zwei Phasenschiebern O-π so gestaltet sind, dass (β1 - β2). I = Φ, wodurch der Phasenzustand Φ definiert wird.
14. Phasenschieber gemäss einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass die zwei Dioden des ersten Phasenschiebers O-π und die Diode des zweiten Phasenschiebers, die im zustand Φ direkt polarisiert wird, indirekt polarisiert werden, während alle anderen Dioden direkt polarisiert werden und die Ausbreitungskonstanten der zwei Phasenschieber O-π so gestaltet sind, dass (β1 - β2). I = Φ, wodurch der Phasenzustand Φ + π definiert wird.
15. Phasenschieber gemäss den Ansprüchen 13 oder 14, dadurch gekennzeichnet, dass die Verbindungsleitungen zwischen den beiden Phasenschiebern 0-7r so gestaltet sind, dass (β1 - β2) . I = π/2.
16. Phasenschieber gemäss einem der Ansprüche 1 bis 15, dadurch gekennzeichnet, dass er in einer elektronischen Abtastantenne verwendet wird, wobei der Ausgang des Phasenschiebers mit einem Strahlungselement, und die Streifenleitung (1) oder die koplanare Leitung (12) mit einer Energiequelle verbunden werden.
17. Elektronische Abtastantenne, welche die Phasenschieber gemäss den Ansprüchen 1 bis 16 verwendet.
EP79401032A 1978-12-22 1979-12-18 Diodenphasenschieber für Mikrowellen und elektronisch abtastende Antenne mit einem solchen Schieber Expired EP0013222B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7836247 1978-12-22
FR7836247A FR2445036A1 (fr) 1978-12-22 1978-12-22 Dephaseur hyperfrequence a diodes et antenne a balayage electronique comportant un tel dephaseur

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Publication Number Publication Date
EP0013222A1 EP0013222A1 (de) 1980-07-09
EP0013222B1 true EP0013222B1 (de) 1981-08-12

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US (1) US4305052A (de)
EP (1) EP0013222B1 (de)
JP (1) JPS5590102A (de)
DE (1) DE2960650D1 (de)
FR (1) FR2445036A1 (de)

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JPS5590102A (en) 1980-07-08
DE2960650D1 (en) 1981-11-12
FR2445036A1 (fr) 1980-07-18
FR2445036B1 (de) 1982-04-16
EP0013222A1 (de) 1980-07-09
JPS6239561B2 (de) 1987-08-24
US4305052A (en) 1981-12-08

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