EP0335788B1 - Mikrowellenphasenschieber - Google Patents

Mikrowellenphasenschieber Download PDF

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Publication number
EP0335788B1
EP0335788B1 EP89400847A EP89400847A EP0335788B1 EP 0335788 B1 EP0335788 B1 EP 0335788B1 EP 89400847 A EP89400847 A EP 89400847A EP 89400847 A EP89400847 A EP 89400847A EP 0335788 B1 EP0335788 B1 EP 0335788B1
Authority
EP
European Patent Office
Prior art keywords
line
phase shifter
phase
junction plane
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP89400847A
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English (en)
French (fr)
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EP0335788A1 (de
Inventor
Joelle Ariel
Jacques Legendre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
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Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of EP0335788A1 publication Critical patent/EP0335788A1/de
Application granted granted Critical
Publication of EP0335788B1 publication Critical patent/EP0335788B1/de
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/1007—Microstrip transitions to Slotline or finline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/185—Phase-shifters using a diode or a gas filled discharge tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/19—Conjugate devices, i.e. devices having at least one port decoupled from one other port of the junction type
    • H01P5/20—Magic-T junctions

Definitions

  • the invention relates to microwave phase shifting circuits and, more particularly, microwave phase shifting circuits which perform elementary phase shifts under the control of electrical signals and which can be grouped to obtain phase shifts which are integral multiples of the elementary phase shifts.
  • microwave propagation lines are used which can take different forms and FIGS. 1 to 4 are respectively views which respectively represent a slotted propagation line and a ribbon propagation line better known by the name of microstrip line.
  • a slotted line ( Figures 1 and 2) is formed by an opening 1 made in a metal layer 2 deposited on a dielectric substrate 3.
  • the dielectric support provides the mechanical strength of the metal conductors and constitutes the medium for propagation of the microwave wave. whose energy is concentrated between the edges 4 and 5 of the slit.
  • lines of force of the electric field E have been shown in dotted lines and those of the magnetic field in solid lines.
  • the thickness of the dielectric material is related to its nature and the width of the slotted line determines the characteristic impedance of the line.
  • the ribbon propagation line (FIGS. 3 and 4) comprises a dielectric plate 7 disposed between a ribbon 6 and a metallic plane 8 also called the ground plane. As with the slotted line in Figures 1 and 2, almost all of the energy is concentrated in the dielectric 7. In FIG. 4, the lines of force of the electric field E have been shown in dotted lines.
  • the dielectric material used in the two slit or ribbon lines can be polytetrafluoroethylene, beryllium oxide, aluminum ceramic, quartz or ferrite.
  • the slit or ribbon lines can separately perform a phase shift function by configuring them in different ways.
  • the slit or ribbon lines can separately perform a phase shift function by configuring them in different ways.
  • phase shifters of the prior art whether they are of the slotted line or ribbon line type, reference may be made to numerous articles in the review IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES and in particular an article by Elio A MARIANI and others - vol MTT-17 n ° 12 - December 1969 pages 1091 to 1096 entitled “Slot Line Characteristics” as well as an article by FF WHITE March 1965 pages 232 to 242 entitled "High Power, pin Diode Controlled Microwave Transmission Phase Shifters "and in an article by RWBurns et.al., June 1974, pages 675-688 entitled” Low cost design techniques for semiconductor phase shifters "(see Figure 27).
  • the proposed architecture consists in using a ribbon line and a slotted line located in the extension of one another and no longer perpendicular to each other. At the junction point, the slit line and the ribbon line divide into two sections of line 120 ° from each other and 120 ° from the incident lines.
  • the ribbon line can at the junction, be formed by a line flaring outwardly in Y, a slot with edges parallel to the axis of the line being formed between the two branches of the Y or by the same outer shape but without a slot with edges parallel to the axis of the line ( Figures 4c and 4d) (page 5 lines 3-17).
  • the slotted line for its part, can be constituted by a line without 120 ° extensions, these extensions can be of zero length in particular if a large bandwidth is desired.
  • this type of coupling device is generally not intended to produce at the same time a phase-shifting circuit whose value of the phase-shift would be controlled.
  • the circuit is modified to insert a phase shift circuit of any known type before or after the coupling device, which increases the losses, complicates the circuit and makes it more voluminous.
  • An object of the present invention is therefore to achieve, in the same structure, a change of propagation line and a controlled phase shift of the incident wave, which leads to a reduction in losses and bulk.
  • the invention relates to a microwave phase shifting circuit according to claim 1.
  • Figures 1 to 4 have been described succinctly in the preamble to define the field of the invention, that is to say that of slit and ribbon lines.
  • FIG 5 is a perspective view which schematically shows a microwave phase shifting circuit which comprises a substrate 10 of dielectric material similar to that bearing the reference 3 or 7 in Figures 2 and 4.
  • the underside of the substrate 10 is covered with 'a metal layer 11 in which is made a straight slot 12 of a certain width d, for example by chemical action, so as to produce a slot line of the type described in relation to Figures 1 and 2.
  • This slot 12 does not extend over the entire length of the substrate and ends at one end 40 with a short circuit constituted by the metal layer 11.
  • the other end 41 of the slotted line is open.
  • the upper face 14 of the substrate 10 comprises a strip 15 called a microstrip, having a particular shape. It comprises a central arm 16 and two lateral arms 17 and 18 which are connected to the central arm 16 by a transverse arm 23, the set of arms providing a structure in the form of a candlestick with two branches of unequal length.
  • the arm 17, for example, has a length which is b / 4 greater than that of the arm 18 for reasons which will be explained below, b being the wavelength of the microwave signals transmitted by the line.
  • the ends 19 and 20 of the arms 17 and 18 are each connected to the cathode of a PIN diode 21 and 22, the anode of which is connected to ground.
  • These diodes 21 and 22 have been shown in their electrical form but it is understood that in practice they are in the form of a component which is wired to the substrate 10 by connecting the output terminals, one at the end of a branch 17 or 18 and the other at ground potential.
  • diodes 21 and 22 are biased by conventional type bias circuits which include, for the diode 22 for example, a shock coil 30 and a decoupling capacitor 31 for the cathode of the diode and a shock coil 32 and a decoupling capacitor 33 for the anode of the diode.
  • the bias voltage Vp is applied between points 34 and 35 of the bias circuits.
  • the diodes 21 and 22 are shown connected in a certain direction between the end of the branch and the ground potential. Of course, they can be connected in the other direction, the important thing being that they can be conductive or blocked according to the bias voltage Vp which is applied to them.
  • the positions of the slit line 12 and the ribbon line must be such that the slit line is aligned with the central arm 16 and its end 40 terminates under the arm 16 so as to obtain the best possible coupling. Furthermore, the lengths of the transverse arm 23 on either side of the central arm 16 are equal.
  • the arms 16, 17 and 18 produce a power divider for the incident wave transmitted by line 16 like a magic tee. It is known that in a magic tee (FIG. 6), the incident wave 25 at the input 26 is divided into two waves of amplitudes A and equal phases ⁇ on the channels 27 and 28, the channel 29 being decoupled. It is also known (FIG. 7) that two waves of the same amplitude A but in phase opposition which are applied to the channels 27 and 28 combine in phase on the channel 29, the channel 26 being decoupled.
  • FIG. 5 shows the directions of the electric fields e1 and e2 in the substrate 10 under the transverse arm 23 and the electric field e3 resulting from their combination in the slotted line 12.
  • the operation of the phase shifting circuit has been described for a certain direction of propagation - ribbon line to slotted line - but it is clear that the circuit phase shifter also works in the other direction of propagation - slotted line to substrate.
  • the variation of the phase shift between the wave entering by the strip line 16 and the wave leaving by the slit line 12 depends on the variation of impedance presented by the diodes 21 and 22 according to whether they are simultaneously blocked or conducting, their state depending on the bias voltage Vp applied to them. It should be noted that there is a certain phase shift between the input and output waves for a certain state of the diodes and that this phase shift is modified when the diodes pass into the other state so that this results in a variation. of the phase shift between the two successive states of the diodes.
  • phase shifting circuits which introduce elementary phase shifts of 22.5 ° 45 ° or 90 ° in frequency bands of 10%.
  • each elementary phase shift is obtained by making the diodes 21 and 22 simultaneously conducting or blocked.
  • phase shifting circuits of a group can be assembled in various ways and one of them consists in using the same substrate on which the different slit line / ribbon line transitions are made.
  • the coupling between the adjacent phase-shifting circuits can be achieved in various ways, by example a line-to-slit / line-to-line coupling, or a line to tape / line to line coupling, or even a line to slit / line to line coupling and vice versa.

Landscapes

  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Claims (6)

  1. Schaltung zum Koppeln zwischen einer Streifenleitung (16, 17, 18) und einer Schlitzleitung (12) mit steuerbarer Einführung einer Phasenverschiebung zwischen einer eine der Leitungen speisenden Höchstfrequenzwelle und einer Ausgangswelle an der anderen Leitung, wobei die Schlitzleitung (12) und die Streifenleitung (16, 17, 18) beiderseits einer von einem Substrat (10) aus dielektrischem Material gebildeten Schicht angebracht sind, eine Mittelachse jeder der Leitungen in der gleichen Ebene, der Verbindungsebene, senkrecht zur Substratschicht (10) liegt, die Streifenleitung in zwei Arme (23, 17; 23, 18) symmetrisch bezüglich der Verbindungsebene aufgeteilt ist und jeder Arm (23, 17; 23, 18) ein Ende (19, 20) aufweist, dadurch gekennzeichnet, daß die Arme jeweils von einem ersten Teil (23) senkrecht zur Verbindungsebene, wobei jeder der ersten Teile (23) bezüglich der Verbindungsebene symmetrisch zum anderen ist, und von einem zweiten Teil (17, 18) gebildet ist, der am Ende des ersten Teils parallel zur Verbindungsebene liegt, wobei diese beiden zweiten Teile zwischen sich eine Differenz der elektrischen Länge von b/4 aufweisen, wobei b die Wellenlänge der Höchstfrequenzwelle ist, und daß zwischen jedem der Enden (19, 20) der Arme (17, 18) und Masse ein PIN-Diode (21, 22) angeschlossen ist, wobei die Vorspannung der Dioden von Mitteln gesteuert ist, die sie gleichzeitig leitend oder sperrend machen, wobei die Änderung des Zustandes der Dioden (21, 22) eine Phasenverschiebung zwischen der Eingangswelle und der Ausgangswelle hervorruft.
  2. Phasenschieberschaltung, dadurch gekennzeichnet, daß sie mehrere in Serie geschaltete Phasenschieberschaltungen nach Anspruch 1 enthält, wobei jede Phasenschieberschaltung dazu vorgesehen ist, eine bestimmte Phasenänderung bei der Zustandsänderung der Dioden einzuführen.
  3. Phasenschieberschaltung nach Anspruch 2, dadurch gekennzeichnet, daß die Phasenschieberschaltungen auf dem gleichen Substrat gebildet sind.
  4. Schaltung nach Anspruch 3, dadurch gekennzeichnet, daß zwei nebeneinanderliegende Phasenschieberschaltungen über ihre Schlitzleitung (12) gekoppelt sind.
  5. Phasenschieberschaltung nach Anspruch 3, dadurch gekennzeichnet, daß zwei nebeneinanderliegende Phasenschieberschaltungen über ihre Streifenleitung (16) gekoppelt sind.
  6. Phasenschieberschaltung nach Anspruch 3, dadurch gekennzeichnet, daß zwei nebeneinanderliegende Phasenschieberschaltungen durch einen Übergang Schlitzleitung/Streifenleitung oder umgekehrt gekoppelt sind.
EP89400847A 1988-04-01 1989-03-24 Mikrowellenphasenschieber Expired - Lifetime EP0335788B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8804388A FR2629641B1 (fr) 1988-04-01 1988-04-01 Circuit dephaseur hyperfrequence
FR8804388 1988-04-01

Publications (2)

Publication Number Publication Date
EP0335788A1 EP0335788A1 (de) 1989-10-04
EP0335788B1 true EP0335788B1 (de) 1994-07-20

Family

ID=9364911

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89400847A Expired - Lifetime EP0335788B1 (de) 1988-04-01 1989-03-24 Mikrowellenphasenschieber

Country Status (4)

Country Link
US (1) US4967172A (de)
EP (1) EP0335788B1 (de)
DE (1) DE68916829T2 (de)
FR (1) FR2629641B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0398159A1 (de) * 1989-05-19 1990-11-22 Siemens Aktiengesellschaft Endlosphasenschieber
US4952895A (en) * 1989-09-15 1990-08-28 Hughes Aircraft Company Planar airstripline-stripline magic-tee
US5337027A (en) * 1992-12-18 1994-08-09 General Electric Company Microwave HDI phase shifter
GB2325786B (en) * 1997-05-22 2001-08-15 Nec Technologies Phase switch
JP3440909B2 (ja) 1999-02-23 2003-08-25 株式会社村田製作所 誘電体共振器、インダクタ、キャパシタ、誘電体フィルタ、発振器、誘電体デュプレクサおよび通信装置
FR2811141B1 (fr) * 2000-06-29 2002-09-20 Thomson Multimedia Sa Circuit en t realise en technologie microruban avec element dephaseur
CN101393261B (zh) * 2008-10-30 2012-01-11 西安华腾微波有限责任公司 一种x波段雷达接收机的保护电路
KR102409913B1 (ko) 2017-12-06 2022-06-16 삼성전자주식회사 솔더 리플로우 장치 및 이를 이용한 전자 장치의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1480369A (fr) * 1966-03-31 1967-05-12 Thomson Houston Comp Francaise Perfectionnements aux circuits solides déphaseurs, utilisés notamment dans le domaine des ultra hautes fréquences et des hyperfréquences
FR1570001A (de) * 1968-04-23 1969-06-06
FR2210021B1 (de) * 1972-12-12 1977-07-22 Thomson Csf
US4056792A (en) * 1975-11-11 1977-11-01 Westinghouse Electric Corporation Wideband diode switched microwave phase shifter network
DE2653676C2 (de) * 1976-11-26 1985-01-24 Philips Patentverwaltung Gmbh, 2000 Hamburg Breitbandiger 180 Grad-Phasenschieber
FR2445036A1 (fr) * 1978-12-22 1980-07-18 Thomson Csf Dephaseur hyperfrequence a diodes et antenne a balayage electronique comportant un tel dephaseur
US4301432A (en) * 1980-08-11 1981-11-17 Motorola, Inc. Complex RF weighter
CA1207852A (en) * 1984-02-29 1986-07-15 William D. Cornish Non-resonant microwave frequency halver

Also Published As

Publication number Publication date
DE68916829D1 (de) 1994-08-25
EP0335788A1 (de) 1989-10-04
US4967172A (en) 1990-10-30
DE68916829T2 (de) 1995-01-12
FR2629641B1 (fr) 1990-03-23
FR2629641A1 (fr) 1989-10-06

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