EP1133000B1 - Aktiver Mikrowellenreflektor für Antenne mit elektronischer Strahlschwenkung - Google Patents

Aktiver Mikrowellenreflektor für Antenne mit elektronischer Strahlschwenkung Download PDF

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Publication number
EP1133000B1
EP1133000B1 EP20000400610 EP00400610A EP1133000B1 EP 1133000 B1 EP1133000 B1 EP 1133000B1 EP 20000400610 EP20000400610 EP 20000400610 EP 00400610 A EP00400610 A EP 00400610A EP 1133000 B1 EP1133000 B1 EP 1133000B1
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EP
European Patent Office
Prior art keywords
circuit
reflector
microwave
conductive
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP20000400610
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English (en)
French (fr)
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EP1133000A1 (de
Inventor
Claude Thomson-CSF Prop. Intellectuelle Chekroun
Michel Thomson-CSF Prop. Intellectuelle Dubois
Georges Thomson-CSF Prop. Intell. Guillaumot
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Thales SA
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Thales SA
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Priority to EP20000400610 priority Critical patent/EP1133000B1/de
Priority to DE2000606353 priority patent/DE60006353T2/de
Publication of EP1133000A1 publication Critical patent/EP1133000A1/de
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Publication of EP1133000B1 publication Critical patent/EP1133000B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
    • H01Q3/46—Active lenses or reflecting arrays

Definitions

  • the subject of the invention is an active microwave reflector with electronic scanning, capable of being illuminated by a wave source microwave to form an antenna.
  • Electronic scanning antennas are commonly made up of a set of radiating elements emitting a wave microwave whose phase is electronically controllable, independently for each element or group of elements.
  • An antenna whose beam is capable of scanning space in two directions orthogonal (2D) requires a large number of radiating elements; their cost, that of the phase shifters and associated electronics generally makes this very expensive type of antenna.
  • EP-A-595726 discloses an electronic scanning antenna comprising a network of photodetector phase-shifting elements which can operate in transmission as microwave lens or, with metallization or a network of metallic wires, such as active microwave reflector.
  • Document FR-A-2 708 808 describes a phase-shifting panel with four phase states and its application to a microwave lens, the panel comprising conductive wires arranged parallel to the direction of the electric field of an incident wave, each wire carrying at at least two diodes mounted in opposition and supplied by control conductors.
  • the object of the invention is to allow the realization of an antenna with 2D electronic scanning for a cost which is significantly lower, at performance comparable to that of known antennas.
  • the antenna according to the invention consists of a source linearly polarized wave wave, illuminating an active reflector microwave.
  • the active reflector according to the invention comprises an assembly of elementary cells each comprising a microwave circuit phase shifter arranged in front of a conducting plane.
  • the phase shifter has conductive wires arranged on a support, the wires each comprising at at least two semiconductor elements with two states, diodes for example, and being connected to conductors enabling the state of the diodes independently of each other, each of the diodes can be in the on or blocked state; we thus obtain four possible states and geometric and electrical characteristics of the cell are such that at each of these states corresponds to a given phase shift value.
  • microwave decoupling means are provided which consist in particular in forming between two neighboring cells, guides waves whose walls are parallel to the polarization of the wave and whose the spacing is such that it prohibits the propagation of the wave.
  • FIG. 1 schematically illustrates the principle used by the antenna according to the invention.
  • the antenna is formed by a source S of microwave wave O 1 with linear polarization, parallel to a predefined direction OY, which illuminates an active reflector RA located in a plane, for example XOY containing the direction OY.
  • the reflector RA is shown diagrammatically in FIG. 2, seen from above (in the XOY plane).
  • Each cell is capable of reflect the wave it receives with a controllable phase value electrically, according to a process described later.
  • Figure 3 is a schematic sectional view (in a YOZ plane normal to plane XOY) of an embodiment of the active reflector RA.
  • the reflector RA is composed of a microwave circuit CH, receiving the incident wave O 1 , for example substantially planar, and of a conductive plane CC, arranged substantially parallel to the circuit CH, at a predefined distance d from the latter.
  • the function of the CC conducting plane is to reflect waves microwave. It can be constituted by any known means, for example parallel wires or a sufficiently tight mesh, or a continuous plane.
  • the CH circuit and the CC plane are preferably made on two sides of a dielectric support 32, of the printed circuit type.
  • the RA reflector further comprises, preferably on the same printed circuit 32, which is then a multilayer circuit, the electronic circuit (components and interconnections) required to control the values of phase.
  • a multilayer circuit whose face front 30 carries the CH circuit, the rear face 31 carries components 132, and the intermediate layers form the plane CC and by example two PI plans for interconnecting components 132 to the CH circuit.
  • FIG. 4 represents an embodiment of the circuit microwave CH.
  • the CH circuit consists of elementary phase shifters D made on the surface 30 and separated by decoupling zones. Each phase shifter D, associated with the corresponding part of the DC conductor plane, forms one of the elementary cells C in FIG. 2.
  • a D comprises one or more wires F (only one in FIG. 4), substantially parallel to the direction OY and each carrying at least two semiconductor elements with two states, D 1 and D 2 , for example diodes, for example connected in opposition, for example by their cathode.
  • the supply voltage of the diodes D 1 and D 2 is brought by control conductors which are substantially parallel to each other and perpendicular to the wires F, marked CD. There are at least three, or four as shown in the figure, so as to control the diodes independently of one another.
  • phase shifters D are surrounded by conductive zones arranged towards their periphery, marked 74 in a direction parallel to OX and 75 in a direction parallel to OY, used for decoupling as explained below.
  • the CD conductors are connected to the electronic circuit carried by the reflector, via metallized holes 40 (41) made at the level of the conductive zones 75 but of course electrically isolated of the latter (for example for an interruption 43 of the zone 75).
  • the surface of the various conductors for example made in the form of metallic deposits on the surface 30, is shown hatched although not seen in section.
  • the incident microwave wave is received on terminals B 1 and B 2 and meets four capacitors C O , C I1 , C I2 , C I3 in series , connected in parallel on terminals B 1 and B 2 .
  • the capacitance C O represents the linear decoupling capacity between the extreme CD conductors and the conductive zones 74;
  • the capacitance C I1 is the linear capacitance between the conductors CD surrounding the diode D 1 , the capacitance C I3 , the linear capacitance between the central conductors CD, and the capacitance C I2 , the equivalent of C I1 for the diode D 2 .
  • diode D 2 represented by its equivalent diagram.
  • the latter is analogous to that of diode D 1 , its components bearing an index 2.
  • the microwave output voltage is taken between terminals B 3 and B 4 , terminals of the capacitors C 0 , C I1 , C I2 and C I3 .
  • phase shifter D The operation of the phase shifter D is explained below by considering, in a first step, the behavior of such a circuit in the absence of the diode D 2 and the central CD conductors, which returns to the equivalent diagram of the figure 5 to delete the block D 2 as well as the capacities C I2 and C I3 .
  • phase shifter D can have four different values for its susceptance B D (denoted B D1 , B D2 , B D3 and B D4 ) depending on the command (direct or reverse polarization) applied to each of the diodes D 1 and D 2 . These values are a function of the parameters of the circuit of FIG. 5, that is to say of the values chosen for the geometric (dimensions, shapes and spacings of the different conductive surfaces) and electrical (electrical characteristics of the diodes) parameters of the phase shifter.
  • B CC -cotg 2 ⁇ d ⁇ where ⁇ is the wavelength corresponding to the pulsation ⁇ .
  • the susceptance B C can take four distinct values (denoted B C1 , B C2 , B C3 , and B C4 ) corresponding respectively to the four values of B D , the distance d representing an additional parameter for the determination of the values B C1 - B C4 .
  • the parameters of the circuit are chosen so that the zero (or substantially zero) susceptances are such that they correspond to the diodes polarized in the direct direction, but that can of course choose a symmetrical operation in which the parameters are determined to substantially cancel the susceptances B r ; more generally, it is not necessary that one of the susceptances B d or B r is zero, these values being determined so that the condition of equal distribution of the phase shifts d ⁇ 1 -d ⁇ 4 is fulfilled.
  • the active reflector according to the invention also comprises means of decoupling between C cells.
  • the microwave wave received by the cells is linearly polarized, parallel to the OY direction. It is desirable that this wave does not propagate from one cell to another, in the direction OX.
  • the invention provides for having a conductive zone 75 substantially in the form of a strip, produced by metallic deposition on the surface 30 for example, between the cells, parallel to the direction OY.
  • This strip 75 forms, with the reflective plane CC which is below, a space of the waveguide type whose width is the distance d.
  • the distance d is chosen so that it is less than ⁇ / 2, knowing that a wave whose polarization is parallel to the bands cannot propagate in such a space.
  • the reflector according to the invention operates in a certain frequency band and d is chosen so that it is less than the smallest of the wavelengths of the band.
  • d is chosen so that it is less than the smallest of the wavelengths of the band.
  • the strip 75 must have a width e , in the direction OX, sufficient for the effect described above to be appreciable.
  • the width e may be of the order of ⁇ / 15.
  • FIG. 7 represents another embodiment of the circuit microwave CH, allowing to realize a bipolarization antenna.
  • phase shifting circuit carried on the surface 30 of the substrate 32 now consists of two wires F 1 , F 2 , each carrying two semiconductor elements such as diodes (D 11 , D 21 , D 12 , D 22 ), connected for example to the same central conductor 71 itself connected by a metallized hole 72 to the electronic circuit for controlling the reflector.
  • Each of the diode wires acts here on the only waves whose polarization has a component which is parallel to them, according to the same process as that which was described previously, subject to taking into account the differences in the geometry of the conductors.

Landscapes

  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Aerials With Secondary Devices (AREA)

Claims (8)

  1. Aktiver Höchstfrequenzreflektor, der eine elektromagnetische Welle empfangen kann, die in einer gegebenen ersten Richtung (OY) linear polarisiert ist, und eine Gruppe von Elementarzellen (C), die auf einer Oberfläche nebeneinander angeordnet sind, umfasst,
       wobei jede Zelle eine Höchstfrequenzphasenverschiebungsschaltung (D) und eine Leiterebene (CC), die im Wesentlichen parallel zu der Höchstfrequenzschaltung in einem im Voraus definierten Abstand (d) von dieser Letzteren angeordnet ist, umfasst, dadurch gekennzeichnet, dass der im Voraus definierte Abstand (d) kleiner ist als die Hälfte der kleinsten Wellenlänge des Betriebsbandes des Reflektors,
       wobei die Phasenverschiebungsschaltung einen dielektrischen Träger (32), wenigstens einen elektrisch leitenden Draht (F), der zu der gegebenen Richtung im Wesentlichen parallel ist, auf dem Träger angeordnet ist und wenigstens zwei Halbleiterelemente (D1, D2) mit zwei Zuständen trägt, wobei der Draht mit Steuerleitern (CD) der Halbleiterelemente verbunden ist, die zu den Drähten (F) im Wesentlichen senkrecht sind, wobei die Steuerleiter wenigstens in der Anzahl drei vorhanden sind, um den Zustand der Halbleiterelemente unabhängig voneinander zu steuern, sowie zwei erste leitende Zonen (74) umfasst, die in der Nähe des Umfangs der Zelle im Wesentlichen parallel zu den Steuerleitern angeordnet sind,
       wobei die geometrischen und elektrischen Eigenschaften der Zelle derart sind, dass jedem der Zustände der Halbleiterelemente ein gegebener Phasenverschiebungswert (dϕ1, dϕ2, dϕ3, dϕ4) der elektromagnetischen Welle, die von der Zelle reflektiert wird, entspricht,
       wobei der Reflektor außerdem eine elektronische Schaltung zum Steuern des Zustandes der Halbleiterelemente, die mit den Steuerleitern verbunden ist, und Höchstfrequenzentkopplungsmittel zwischen den Zellen umfasst, wobei diese Mittel eine zweite leitende Zone (75) aufweisen, die zwischen jeder Zelle parallel zu der gegebenen Richtung angeordnet ist und mit der Leiterebene einen Leiterraum bildet, in dem sich die Welle nicht ausbreiten kann.
  2. Reflektor nach Anspruch 1, dadurch gekennzeichnet, dass der dielektrische Träger (32) vom Typ einer mehrlagigen gedruckten Schaltung ist, wovon eine erste Fläche (30) die Höchstfrequenzschaltung trägt, eine erste Zwischenlage die Leiterebene trägt und die zweite Fläche (31) Komponenten der Steuerschaltung trägt.
  3. Reflektor nach Anspruch 2, dadurch gekennzeichnet, dass der dielektrische Träger (32) außerdem wenigstens eine zweite Zwischenlage (PI) aufweist, die Zwischenverbindungen der Steuerschaltung trägt.
  4. Reflektor nach einem der Ansprüche 2 oder 3, dadurch gekennzeichnet, dass er metallisierte Löcher (40, 41) aufweist, die in dem dielektrischen Träger (32) in einer zu der ersten Richtung im Wesentlichen senkrechten zweiten Richtung (OZ) in einem Abstand ausgebildet sind, der viel kleiner als die Länge der elektromagnetischen Welle ist, wobei bestimmte dieser metallisierten Löcher die Verbindung zwischen der Steuerschaltung und den Steuerleitern gewährleisten.
  5. Reflektor nach Anspruch 4, dadurch gekennzeichnet, dass die metallisierten Löcher (40, 41) in der zweiten leitenden Zone (75) ausgebildet sind, jedoch ohne dass mit dieser Letzteren ein elektrischer Kontakt besteht.
  6. Reflektor nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die ersten leitenden Zonen (74) durch Leiterebenen (61), die zu der ersten Richtung (OY) im Wesentlichen senkrecht sind und sich wenigstens zwischen der Leiterebene (CC) und der Phasenverschiebungsschaltung (D) erstrecken, verlängert sind.
  7. Reflektor nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Halbleiterelemente Dioden sind.
  8. Höchstfrequenzantenne mit elektronischer Stahlschwenkung, dadurch gekennzeichnet, dass sie einen Reflektor (RA) nach einem der vorhergehenden Ansprüche und eine Quelle für Höchstfrequenzwellen, die auf den Reflektor gerichtet sind, umfasst.
EP20000400610 2000-03-07 2000-03-07 Aktiver Mikrowellenreflektor für Antenne mit elektronischer Strahlschwenkung Expired - Lifetime EP1133000B1 (de)

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Application Number Priority Date Filing Date Title
EP20000400610 EP1133000B1 (de) 2000-03-07 2000-03-07 Aktiver Mikrowellenreflektor für Antenne mit elektronischer Strahlschwenkung
DE2000606353 DE60006353T2 (de) 2000-03-07 2000-03-07 Aktiver Mikrowellenreflektor für Antenne mit elektronischer Strahlschwenkung

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Application Number Priority Date Filing Date Title
EP20000400610 EP1133000B1 (de) 2000-03-07 2000-03-07 Aktiver Mikrowellenreflektor für Antenne mit elektronischer Strahlschwenkung

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EP1133000A1 EP1133000A1 (de) 2001-09-12
EP1133000B1 true EP1133000B1 (de) 2003-11-05

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Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044360A (en) * 1975-12-19 1977-08-23 International Telephone And Telegraph Corporation Two-mode RF phase shifter particularly for phase scanner array
FR2697679B1 (fr) * 1992-10-30 1994-11-25 Thomson Csf Déphaseur d'ondes électromagnétiques et application à une antenne à balayage électronique.
FR2708808B1 (fr) * 1993-08-06 1995-09-01 Thomson Csf Radant Panneau déphaseur à quatre états de phase et son application à une lentille hyperfréquence et à une antenne à balayage électronique.

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DE60006353T2 (de) 2004-10-14
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