DK185186A - Celle, som er opbygget i cmos-teknik - Google Patents

Celle, som er opbygget i cmos-teknik Download PDF

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Publication number
DK185186A
DK185186A DK185186A DK185186A DK185186A DK 185186 A DK185186 A DK 185186A DK 185186 A DK185186 A DK 185186A DK 185186 A DK185186 A DK 185186A DK 185186 A DK185186 A DK 185186A
Authority
DK
Denmark
Prior art keywords
transistors
cell
resistor
special
cmos technology
Prior art date
Application number
DK185186A
Other languages
Afrikaans (af)
English (en)
Other versions
DK185186D0 (da
Inventor
Heinz Peter Holzapfel
Petra Michel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK185186D0 publication Critical patent/DK185186D0/da
Publication of DK185186A publication Critical patent/DK185186A/da

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Immobilizing And Processing Of Enzymes And Microorganisms (AREA)
  • Luminescent Compositions (AREA)
  • Bipolar Transistors (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
  • Pyridine Compounds (AREA)
  • Fuel Cell (AREA)
  • Element Separation (AREA)

Description

Figure DK185186AD00021
DK185186A 1985-04-24 1986-04-22 Celle, som er opbygget i cmos-teknik DK185186A (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3514849 1985-04-24
DE3514849 1985-04-24

Publications (2)

Publication Number Publication Date
DK185186D0 DK185186D0 (da) 1986-04-22
DK185186A true DK185186A (da) 1986-10-25

Family

ID=6269024

Family Applications (1)

Application Number Title Priority Date Filing Date
DK185186A DK185186A (da) 1985-04-24 1986-04-22 Celle, som er opbygget i cmos-teknik

Country Status (12)

Country Link
US (1) US4839710A (da)
EP (1) EP0199231B1 (da)
JP (1) JPS61248551A (da)
AT (1) ATE57793T1 (da)
DE (1) DE3675064D1 (da)
DK (1) DK185186A (da)
ES (1) ES8704674A1 (da)
FI (1) FI861408A (da)
GR (1) GR861056B (da)
IE (1) IE57450B1 (da)
NO (1) NO861166L (da)
PT (1) PT82439B (da)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2786467B2 (ja) * 1989-03-15 1998-08-13 沖電気工業株式会社 Ｃｍｏｓ半導体集積回路
US5281835A (en) * 1989-06-14 1994-01-25 Fujitsu Limited Semi-custom integrated circuit device
JPH05315448A (ja) * 1992-04-27 1993-11-26 Nec Corp 集積回路装置およびそのレイアウト方法
US5367187A (en) * 1992-12-22 1994-11-22 Quality Semiconductor, Inc. Master slice gate array integrated circuits with basic cells adaptable for both input/output and logic functions
JP3719618B2 (ja) * 1996-06-17 2005-11-24 松下電器産業株式会社 半導体装置及びその製造方法
US6180984B1 (en) 1998-12-23 2001-01-30 Honeywell Inc. Integrated circuit impedance device and method of manufacture therefor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4399417A (en) * 1980-06-06 1983-08-16 Bell Telephone Laboratories, Incorporated Integrated CRC filter circuit
JPS587854A (ja) * 1981-07-06 1983-01-17 Nippon Telegr & Teleph Corp <Ntt> 相補型ｍｉｓ回路装置及びそれを有する半導体集積回路装置
JPS59135745A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd 半導体集積回路装置
JPS6047441A (ja) * 1983-08-26 1985-03-14 Fujitsu Ltd 半導体集積回路
JPS6074644A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd Ｃｍｏｓゲ−トアレ−

Also Published As

Publication number Publication date
PT82439B (pt) 1992-07-31
ES8704674A1 (es) 1987-04-01
DK185186D0 (da) 1986-04-22
FI861408A0 (fi) 1986-04-01
EP0199231B1 (de) 1990-10-24
EP0199231A1 (de) 1986-10-29
GR861056B (en) 1986-08-19
IE861081L (en) 1986-10-24
IE57450B1 (en) 1992-09-09
ES554331A0 (es) 1987-04-01
ATE57793T1 (de) 1990-11-15
DE3675064D1 (de) 1990-11-29
US4839710A (en) 1989-06-13
PT82439A (de) 1986-05-01
JPS61248551A (ja) 1986-11-05
FI861408A (fi) 1986-10-25
NO861166L (no) 1986-10-27

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment