SE7710301L - Felteffekttransistor - Google Patents

Felteffekttransistor

Info

Publication number
SE7710301L
SE7710301L SE7710301A SE7710301A SE7710301L SE 7710301 L SE7710301 L SE 7710301L SE 7710301 A SE7710301 A SE 7710301A SE 7710301 A SE7710301 A SE 7710301A SE 7710301 L SE7710301 L SE 7710301L
Authority
SE
Sweden
Prior art keywords
regions
disposed
highly doped
power transistor
field power
Prior art date
Application number
SE7710301A
Other languages
English (en)
Other versions
SE423657B (sv
Inventor
J Nishizawa
T Kitsuregawa
Original Assignee
Semiconductor Res Found
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Res Found, Mitsubishi Electric Corp filed Critical Semiconductor Res Found
Publication of SE7710301L publication Critical patent/SE7710301L/sv
Publication of SE423657B publication Critical patent/SE423657B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE7710301A 1973-05-22 1977-09-14 Felteffektransistor SE423657B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5805473A JPS5546068B2 (sv) 1973-05-22 1973-05-22

Publications (2)

Publication Number Publication Date
SE7710301L true SE7710301L (sv) 1977-09-14
SE423657B SE423657B (sv) 1982-05-17

Family

ID=13073188

Family Applications (2)

Application Number Title Priority Date Filing Date
SE7710302A SE424119B (sv) 1973-05-22 1977-09-14 Felteffekttransistor
SE7710301A SE423657B (sv) 1973-05-22 1977-09-14 Felteffektransistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SE7710302A SE424119B (sv) 1973-05-22 1977-09-14 Felteffekttransistor

Country Status (7)

Country Link
US (1) US4297718A (sv)
JP (1) JPS5546068B2 (sv)
CA (1) CA1003121A (sv)
DE (1) DE2424947C2 (sv)
FR (1) FR2231114B1 (sv)
NL (1) NL7406911A (sv)
SE (2) SE424119B (sv)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811756B2 (ja) * 1974-11-29 1983-03-04 三菱電機株式会社 デンカイコウカハンドウタイソシ オヨビ ソノソウチ
JPS5562775A (en) * 1978-11-02 1980-05-12 Matsushita Electric Ind Co Ltd Field-effect transistor
US4463366A (en) * 1980-06-20 1984-07-31 Nippon Telegraph & Telephone Public Corp. Field effect transistor with combination Schottky-junction gate
US4361814A (en) * 1980-09-29 1982-11-30 Rockwell International Corporation Distributed optical parametric amplifier
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
US4507845A (en) * 1983-09-12 1985-04-02 Trw Inc. Method of making field effect transistors with opposed source _and gate regions
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
GB2156152B (en) * 1984-03-21 1987-07-15 Plessey Co Plc Travelling-wave field-effect transistor
US4797716A (en) * 1984-04-04 1989-01-10 The United States Of America As Represented By The United States Department Of Energy Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
US4641164A (en) * 1986-05-30 1987-02-03 Rca Corporation Bidirectional vertical power MOS device and fabrication method
US4700460A (en) * 1986-05-30 1987-10-20 Rca Corporation Method for fabricating bidirectional vertical power MOS device
FR2608318B1 (fr) * 1986-12-16 1989-06-16 Thomson Semiconducteurs Dispositif semi-conducteur a faible bruit en hyperfrequence, monte dans un boitier
US5057886A (en) * 1988-12-21 1991-10-15 Texas Instruments Incorporated Non-volatile memory with improved coupling between gates
US5627389A (en) * 1994-07-15 1997-05-06 Schary; Alison High-frequency traveling wave field-effect transistor
US6563150B1 (en) 2000-07-25 2003-05-13 Alison Schary High frequency field effect transistor
US7791160B2 (en) 2006-10-19 2010-09-07 International Business Machines Corporation High-performance FET device layout
US7689946B2 (en) * 2006-10-19 2010-03-30 International Business Machines Corporation High-performance FET device layout
WO2017043611A1 (ja) * 2015-09-10 2017-03-16 古河電気工業株式会社 パワーデバイス

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299911A (sv) * 1951-08-02
US3011104A (en) * 1959-07-31 1961-11-28 Watanabe Yasushi Semiconductor diodes
DE1789084B2 (de) * 1961-08-17 1973-05-30 Rca Corp., New York, N.Y. (V.St.A.) Duennschicht-verknuepfungsglied und verfahren zu seiner herstellung
US3436689A (en) * 1964-11-02 1969-04-01 Us Navy Field effect delay line
GB1155578A (en) * 1965-10-08 1969-06-18 Sony Corp Field Effect Transistor
US3427514A (en) * 1966-10-13 1969-02-11 Rca Corp Mos tetrode
AT280348B (de) * 1968-07-30 1970-04-10 H C Hans Dipl Ing Dr Dr List Integrierter Feld-Effekt-Kettenverstärker
DE2058702A1 (de) * 1970-11-28 1972-06-29 Licentia Gmbh Feldeffekttransistor
IT981240B (it) * 1972-03-10 1974-10-10 Teszner S Perfezionamenti ai gridistori per iperfrequenze
US3905036A (en) * 1974-03-29 1975-09-09 Gen Electric Field effect transistor devices and methods of making same

Also Published As

Publication number Publication date
SE424119B (sv) 1982-06-28
JPS5012982A (sv) 1975-02-10
SE423657B (sv) 1982-05-17
SE7710302L (sv) 1977-09-14
FR2231114A1 (sv) 1974-12-20
DE2424947A1 (de) 1974-12-05
CA1003121A (en) 1977-01-04
US4297718A (en) 1981-10-27
JPS5546068B2 (sv) 1980-11-21
FR2231114B1 (sv) 1978-11-24
DE2424947C2 (de) 1982-12-16
NL7406911A (sv) 1974-11-26

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