AT280348B - Integrierter Feld-Effekt-Kettenverstärker - Google Patents
Integrierter Feld-Effekt-KettenverstärkerInfo
- Publication number
- AT280348B AT280348B AT744168A AT744168A AT280348B AT 280348 B AT280348 B AT 280348B AT 744168 A AT744168 A AT 744168A AT 744168 A AT744168 A AT 744168A AT 280348 B AT280348 B AT 280348B
- Authority
- AT
- Austria
- Prior art keywords
- integrated field
- effect chain
- chain amplifier
- amplifier
- integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT744168A AT280348B (de) | 1968-07-30 | 1968-07-30 | Integrierter Feld-Effekt-Kettenverstärker |
| US798878A US3564442A (en) | 1968-07-30 | 1969-02-13 | Integrated field-effect distributed amplifier |
| DE19691935862 DE1935862B2 (de) | 1968-07-30 | 1969-07-15 | Kettenverstaerker mit feld effekt transistoren |
| GB35806/69A GB1271836A (en) | 1968-07-30 | 1969-07-16 | Integrated field-effect type distributed amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT744168A AT280348B (de) | 1968-07-30 | 1968-07-30 | Integrierter Feld-Effekt-Kettenverstärker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT280348B true AT280348B (de) | 1970-04-10 |
Family
ID=3596080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT744168A AT280348B (de) | 1968-07-30 | 1968-07-30 | Integrierter Feld-Effekt-Kettenverstärker |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3564442A (de) |
| AT (1) | AT280348B (de) |
| DE (1) | DE1935862B2 (de) |
| GB (1) | GB1271836A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486719A (en) * | 1982-07-01 | 1984-12-04 | Raytheon Company | Distributed amplifier |
| DE4335132A1 (de) * | 1993-10-15 | 1995-04-20 | Saur Brosch Roland | Breitband-Verstärkerschaltung |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3806772A (en) * | 1972-02-07 | 1974-04-23 | Fairchild Camera Instr Co | Charge coupled amplifier |
| JPS5546068B2 (de) * | 1973-05-22 | 1980-11-21 | ||
| US4001711A (en) * | 1974-08-05 | 1977-01-04 | Motorola, Inc. | Radio frequency power amplifier constructed as hybrid microelectronic unit |
| JPS57133712A (en) * | 1981-02-12 | 1982-08-18 | Fujitsu Ltd | Constituting method of delay circuit in master slice ic |
| US4419632A (en) * | 1981-12-11 | 1983-12-06 | Bell Telephone Laboratories, Incorporated | Bias circuit for microwave FETs |
| US4918401A (en) * | 1985-09-30 | 1990-04-17 | Siemens Aktiengesellschaft | Step adjustable distributed amplifier network structure |
| US4947220A (en) * | 1987-08-27 | 1990-08-07 | Yoder Max N | Yoked, orthogonally distributed equal reactance amplifier |
| US5012203A (en) * | 1989-12-27 | 1991-04-30 | Wisconsin Alumni Research Foundation | Distributed amplifier with attenuation compensation |
-
1968
- 1968-07-30 AT AT744168A patent/AT280348B/de not_active IP Right Cessation
-
1969
- 1969-02-13 US US798878A patent/US3564442A/en not_active Expired - Lifetime
- 1969-07-15 DE DE19691935862 patent/DE1935862B2/de active Pending
- 1969-07-16 GB GB35806/69A patent/GB1271836A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486719A (en) * | 1982-07-01 | 1984-12-04 | Raytheon Company | Distributed amplifier |
| DE4335132A1 (de) * | 1993-10-15 | 1995-04-20 | Saur Brosch Roland | Breitband-Verstärkerschaltung |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1935862B2 (de) | 1971-07-01 |
| GB1271836A (en) | 1972-04-26 |
| US3564442A (en) | 1971-02-16 |
| DE1935862A1 (de) | 1970-02-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |