AT280348B - Integrierter Feld-Effekt-Kettenverstärker - Google Patents

Integrierter Feld-Effekt-Kettenverstärker

Info

Publication number
AT280348B
AT280348B AT744168A AT744168A AT280348B AT 280348 B AT280348 B AT 280348B AT 744168 A AT744168 A AT 744168A AT 744168 A AT744168 A AT 744168A AT 280348 B AT280348 B AT 280348B
Authority
AT
Austria
Prior art keywords
integrated field
effect chain
chain amplifier
amplifier
integrated
Prior art date
Application number
AT744168A
Other languages
English (en)
Inventor
Reimar Dipl Ing Germann
H C Hans Dipl Ing Dr Dr List
Original Assignee
H C Hans Dipl Ing Dr Dr List
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by H C Hans Dipl Ing Dr Dr List filed Critical H C Hans Dipl Ing Dr Dr List
Priority to AT744168A priority Critical patent/AT280348B/de
Priority to US798878A priority patent/US3564442A/en
Priority to DE19691935862 priority patent/DE1935862B2/de
Priority to GB35806/69A priority patent/GB1271836A/en
Application granted granted Critical
Publication of AT280348B publication Critical patent/AT280348B/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
AT744168A 1968-07-30 1968-07-30 Integrierter Feld-Effekt-Kettenverstärker AT280348B (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT744168A AT280348B (de) 1968-07-30 1968-07-30 Integrierter Feld-Effekt-Kettenverstärker
US798878A US3564442A (en) 1968-07-30 1969-02-13 Integrated field-effect distributed amplifier
DE19691935862 DE1935862B2 (de) 1968-07-30 1969-07-15 Kettenverstaerker mit feld effekt transistoren
GB35806/69A GB1271836A (en) 1968-07-30 1969-07-16 Integrated field-effect type distributed amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT744168A AT280348B (de) 1968-07-30 1968-07-30 Integrierter Feld-Effekt-Kettenverstärker

Publications (1)

Publication Number Publication Date
AT280348B true AT280348B (de) 1970-04-10

Family

ID=3596080

Family Applications (1)

Application Number Title Priority Date Filing Date
AT744168A AT280348B (de) 1968-07-30 1968-07-30 Integrierter Feld-Effekt-Kettenverstärker

Country Status (4)

Country Link
US (1) US3564442A (de)
AT (1) AT280348B (de)
DE (1) DE1935862B2 (de)
GB (1) GB1271836A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486719A (en) * 1982-07-01 1984-12-04 Raytheon Company Distributed amplifier
DE4335132A1 (de) * 1993-10-15 1995-04-20 Saur Brosch Roland Breitband-Verstärkerschaltung

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806772A (en) * 1972-02-07 1974-04-23 Fairchild Camera Instr Co Charge coupled amplifier
JPS5546068B2 (de) * 1973-05-22 1980-11-21
US4001711A (en) * 1974-08-05 1977-01-04 Motorola, Inc. Radio frequency power amplifier constructed as hybrid microelectronic unit
JPS57133712A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Constituting method of delay circuit in master slice ic
US4419632A (en) * 1981-12-11 1983-12-06 Bell Telephone Laboratories, Incorporated Bias circuit for microwave FETs
US4918401A (en) * 1985-09-30 1990-04-17 Siemens Aktiengesellschaft Step adjustable distributed amplifier network structure
US4947220A (en) * 1987-08-27 1990-08-07 Yoder Max N Yoked, orthogonally distributed equal reactance amplifier
US5012203A (en) * 1989-12-27 1991-04-30 Wisconsin Alumni Research Foundation Distributed amplifier with attenuation compensation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486719A (en) * 1982-07-01 1984-12-04 Raytheon Company Distributed amplifier
DE4335132A1 (de) * 1993-10-15 1995-04-20 Saur Brosch Roland Breitband-Verstärkerschaltung

Also Published As

Publication number Publication date
GB1271836A (en) 1972-04-26
DE1935862B2 (de) 1971-07-01
US3564442A (en) 1971-02-16
DE1935862A1 (de) 1970-02-05

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