AT329115B - Halbleiteranordnung mit versenktem isoliermuster und an dieses grenzender dotierter zone - Google Patents
Halbleiteranordnung mit versenktem isoliermuster und an dieses grenzender dotierter zoneInfo
- Publication number
- AT329115B AT329115B AT593871A AT593871A AT329115B AT 329115 B AT329115 B AT 329115B AT 593871 A AT593871 A AT 593871A AT 593871 A AT593871 A AT 593871A AT 329115 B AT329115 B AT 329115B
- Authority
- AT
- Austria
- Prior art keywords
- border
- semi
- insulation pattern
- conductor arrangement
- doped zone
- Prior art date
Links
Classifications
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- H10W10/13—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
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- H10P14/61—
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- H10W10/00—
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- H10W10/01—
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- H10W10/0121—
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- H10W10/0126—
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- H10W15/00—
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- H10W15/01—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NLAANVRAGE7010205,A NL169936C (nl) | 1970-07-10 | 1970-07-10 | Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA593871A ATA593871A (de) | 1975-07-15 |
| AT329115B true AT329115B (de) | 1976-04-26 |
Family
ID=19810545
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT593871A AT329115B (de) | 1970-07-10 | 1971-07-08 | Halbleiteranordnung mit versenktem isoliermuster und an dieses grenzender dotierter zone |
| AT593771A AT329114B (de) | 1970-07-10 | 1971-07-08 | Halbleiteranordnung, insbesondere monolithische integrierte schaltung, mit voneinander isolierten halbleiterinseln |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT593771A AT329114B (de) | 1970-07-10 | 1971-07-08 | Halbleiteranordnung, insbesondere monolithische integrierte schaltung, mit voneinander isolierten halbleiterinseln |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3718843A (de) |
| JP (1) | JPS5029629B1 (de) |
| AT (2) | AT329115B (de) |
| BE (1) | BE769730A (de) |
| CA (1) | CA927015A (de) |
| CH (1) | CH528823A (de) |
| DE (1) | DE2133977C3 (de) |
| ES (1) | ES393036A1 (de) |
| FR (1) | FR2098320B1 (de) |
| GB (1) | GB1353488A (de) |
| NL (1) | NL169936C (de) |
| SE (1) | SE368482B (de) |
| ZA (2) | ZA714522B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL170901C (nl) * | 1971-04-03 | 1983-01-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| NL166156C (nl) * | 1971-05-22 | 1981-06-15 | Philips Nv | Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan. |
| GB1393027A (en) * | 1972-05-30 | 1975-05-07 | Ferranti Ltd | Semiconductor devices |
| JPS5228550B2 (de) * | 1972-10-04 | 1977-07-27 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US34420A (en) * | 1862-02-18 | Improvement in tools | ||
| FR1458860A (fr) * | 1964-12-24 | 1966-03-04 | Ibm | Dispositif à circuit intégré, utilisant une lamelle semi-conductrice pré-formée |
| US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
| US3597287A (en) * | 1965-11-16 | 1971-08-03 | Monsanto Co | Low capacitance field effect transistor |
| FR1527898A (fr) * | 1967-03-16 | 1968-06-07 | Radiotechnique Coprim Rtc | Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication |
-
1970
- 1970-07-10 NL NLAANVRAGE7010205,A patent/NL169936C/xx not_active IP Right Cessation
-
1971
- 1971-07-07 CA CA117579A patent/CA927015A/en not_active Expired
- 1971-07-07 GB GB3184071A patent/GB1353488A/en not_active Expired
- 1971-07-07 SE SE08800/71A patent/SE368482B/xx unknown
- 1971-07-07 CH CH1000971A patent/CH528823A/de not_active IP Right Cessation
- 1971-07-08 ZA ZA714522A patent/ZA714522B/xx unknown
- 1971-07-08 ZA ZA714523A patent/ZA714523B/xx unknown
- 1971-07-08 ES ES393036A patent/ES393036A1/es not_active Expired
- 1971-07-08 DE DE2133977A patent/DE2133977C3/de not_active Expired
- 1971-07-08 BE BE769730A patent/BE769730A/xx not_active IP Right Cessation
- 1971-07-08 US US00160653A patent/US3718843A/en not_active Expired - Lifetime
- 1971-07-08 AT AT593871A patent/AT329115B/de not_active IP Right Cessation
- 1971-07-08 AT AT593771A patent/AT329114B/de not_active IP Right Cessation
- 1971-07-09 FR FR7125294A patent/FR2098320B1/fr not_active Expired
- 1971-07-10 JP JP46050733A patent/JPS5029629B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| ATA593771A (de) | 1975-07-15 |
| SE368482B (de) | 1974-07-01 |
| NL169936C (nl) | 1982-09-01 |
| JPS5029629B1 (de) | 1975-09-25 |
| CA927015A (en) | 1973-05-22 |
| FR2098320A1 (de) | 1972-03-10 |
| BE769730A (fr) | 1972-01-10 |
| CH528823A (de) | 1972-09-30 |
| DE2133977C3 (de) | 1979-08-30 |
| ZA714522B (en) | 1973-02-28 |
| AT329114B (de) | 1976-04-26 |
| ZA714523B (en) | 1973-02-28 |
| NL7010205A (de) | 1972-01-12 |
| NL169936B (nl) | 1982-04-01 |
| FR2098320B1 (de) | 1974-10-11 |
| GB1353488A (en) | 1974-05-15 |
| ATA593871A (de) | 1975-07-15 |
| US3718843A (en) | 1973-02-27 |
| DE2133977B2 (de) | 1978-12-21 |
| ES393036A1 (es) | 1973-08-16 |
| DE2133977A1 (de) | 1972-01-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |