CH536555A - Halbleiterbauelement mit mindestens vier Zonen abwechselnden Leitfähigkeitstyps - Google Patents

Halbleiterbauelement mit mindestens vier Zonen abwechselnden Leitfähigkeitstyps

Info

Publication number
CH536555A
CH536555A CH1469971A CH1469971A CH536555A CH 536555 A CH536555 A CH 536555A CH 1469971 A CH1469971 A CH 1469971A CH 1469971 A CH1469971 A CH 1469971A CH 536555 A CH536555 A CH 536555A
Authority
CH
Switzerland
Prior art keywords
zones
conductivity type
semiconductor component
alternating conductivity
alternating
Prior art date
Application number
CH1469971A
Other languages
English (en)
Inventor
Karl Dr Platzaeder
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712108111 external-priority patent/DE2108111C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH536555A publication Critical patent/CH536555A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CH1469971A 1971-02-19 1971-10-08 Halbleiterbauelement mit mindestens vier Zonen abwechselnden Leitfähigkeitstyps CH536555A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712108111 DE2108111C3 (de) 1971-02-19 Thyristor mit Kurzschlußring

Publications (1)

Publication Number Publication Date
CH536555A true CH536555A (de) 1973-04-30

Family

ID=5799320

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1469971A CH536555A (de) 1971-02-19 1971-10-08 Halbleiterbauelement mit mindestens vier Zonen abwechselnden Leitfähigkeitstyps

Country Status (9)

Country Link
US (1) US3758832A (de)
AT (1) AT312742B (de)
CA (1) CA956390A (de)
CH (1) CH536555A (de)
FR (1) FR2125543B1 (de)
GB (1) GB1331411A (de)
IT (1) IT947639B (de)
NL (1) NL7202112A (de)
SE (1) SE368116B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918279A (de) * 1972-06-08 1974-02-18
JPS50123282A (de) * 1974-03-15 1975-09-27
CH578254A5 (de) * 1974-12-03 1976-07-30 Bbc Brown Boveri & Cie
DE4035500A1 (de) * 1990-11-08 1992-05-14 Bosch Gmbh Robert Elektronischer schalter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH472119A (de) * 1964-11-28 1969-04-30 Licentia Gmbh Steuerbarer Halbleitergleichrichter

Also Published As

Publication number Publication date
IT947639B (it) 1973-05-30
SE368116B (de) 1974-06-17
FR2125543B1 (de) 1977-09-02
GB1331411A (en) 1973-09-26
US3758832A (en) 1973-09-11
FR2125543A1 (de) 1972-09-29
DE2108111A1 (de) 1972-08-24
AT312742B (de) 1974-01-10
CA956390A (en) 1974-10-15
NL7202112A (de) 1972-08-22
DE2108111B2 (de) 1977-07-07

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Legal Events

Date Code Title Description
PL Patent ceased