JPS5562775A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS5562775A
JPS5562775A JP13561578A JP13561578A JPS5562775A JP S5562775 A JPS5562775 A JP S5562775A JP 13561578 A JP13561578 A JP 13561578A JP 13561578 A JP13561578 A JP 13561578A JP S5562775 A JPS5562775 A JP S5562775A
Authority
JP
Japan
Prior art keywords
fet
input
layer
output impedance
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13561578A
Other languages
Japanese (ja)
Inventor
Tomotaka Nobue
Shigeru Kusuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13561578A priority Critical patent/JPS5562775A/en
Publication of JPS5562775A publication Critical patent/JPS5562775A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To facilitate a matching problem of a high-frequency circuit, by limitting the input and output impedance of a FET within only a pure resistance component.
CONSTITUTION: An n+ layer 2 is stacked on a p type substrate 1, a poly Si layer 3 is mounted to a drain electrode portion, an n- channel layer 4 and an n+ source layer 5 are made up in an epitaxial shape and the electrodes of a source 6, a gate 7 and a drain 8 are added through etching and heat treatment. A JFET in distribution type connection is constituted by connecting each simple substance FET in parallel. When portions among simple substances are connected by means of straight- line conductors in Al with l length, w width and t thickness, the value of inductance is decided by these value. Input and output impedance is built up only by a pure resistance component by changing inductance by adjusting l length, w width and t thickness by the internal feedback capacity of the simple substances FET, the floating capacity of package and the operating frequency of the FET. And when an input gate and an output drain are terminated by means of the desired resistance and the input and output impedance are conformed to the characteristic inpedance of a transmission line, a matching problem can be facilitated or eliminated.
COPYRIGHT: (C)1980,JPO&Japio
JP13561578A 1978-11-02 1978-11-02 Field-effect transistor Pending JPS5562775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13561578A JPS5562775A (en) 1978-11-02 1978-11-02 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13561578A JPS5562775A (en) 1978-11-02 1978-11-02 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5562775A true JPS5562775A (en) 1980-05-12

Family

ID=15155940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13561578A Pending JPS5562775A (en) 1978-11-02 1978-11-02 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5562775A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012988A (en) * 1973-05-19 1975-02-10
JPS5012982A (en) * 1973-05-22 1975-02-10
JPS5162979A (en) * 1974-11-29 1976-05-31 Mitsubishi Electric Corp

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012988A (en) * 1973-05-19 1975-02-10
JPS5012982A (en) * 1973-05-22 1975-02-10
JPS5162979A (en) * 1974-11-29 1976-05-31 Mitsubishi Electric Corp

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