DE3851419D1 - MOS-Transistor mit erhöhtem Isolationsvermögen. - Google Patents

MOS-Transistor mit erhöhtem Isolationsvermögen.

Info

Publication number
DE3851419D1
DE3851419D1 DE3851419T DE3851419T DE3851419D1 DE 3851419 D1 DE3851419 D1 DE 3851419D1 DE 3851419 T DE3851419 T DE 3851419T DE 3851419 T DE3851419 T DE 3851419T DE 3851419 D1 DE3851419 D1 DE 3851419D1
Authority
DE
Germany
Prior art keywords
mos transistor
insulation capacity
increased insulation
increased
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3851419T
Other languages
English (en)
Other versions
DE3851419T2 (de
Inventor
Howard L Tigelaar
James L Paterson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE3851419D1 publication Critical patent/DE3851419D1/de
Application granted granted Critical
Publication of DE3851419T2 publication Critical patent/DE3851419T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE19883851419 1987-12-23 1988-11-28 MOS-Transistor mit erhöhtem Isolationsvermögen. Expired - Fee Related DE3851419T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13727887A 1987-12-23 1987-12-23

Publications (2)

Publication Number Publication Date
DE3851419D1 true DE3851419D1 (de) 1994-10-13
DE3851419T2 DE3851419T2 (de) 1995-01-19

Family

ID=22476618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883851419 Expired - Fee Related DE3851419T2 (de) 1987-12-23 1988-11-28 MOS-Transistor mit erhöhtem Isolationsvermögen.

Country Status (3)

Country Link
EP (1) EP0321738B1 (de)
JP (1) JPH022666A (de)
DE (1) DE3851419T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697277A (ja) * 1992-09-11 1994-04-08 Texas Instr Japan Ltd 半導体装置及びその素子分離方法
DE69531282T2 (de) * 1994-12-20 2004-05-27 STMicroelectronics, Inc., Carrollton Isolierung durch aktive Transistoren mit geerdeten Torelektroden
US6380598B1 (en) 1994-12-20 2002-04-30 Stmicroelectronics, Inc. Radiation hardened semiconductor memory
JP2907070B2 (ja) * 1995-08-11 1999-06-21 日本電気株式会社 半導体装置の製造方法
DE69630678T2 (de) * 1996-05-13 2004-09-23 Stmicroelectronics S.R.L., Agrate Brianza Spaltenmultiplexer
US6091630A (en) 1999-09-10 2000-07-18 Stmicroelectronics, Inc. Radiation hardened semiconductor memory
JP2007005580A (ja) * 2005-06-24 2007-01-11 Sanyo Electric Co Ltd メモリ
US9502414B2 (en) 2015-02-26 2016-11-22 Qualcomm Incorporated Adjacent device isolation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
JPS5556663A (en) * 1978-10-23 1980-04-25 Nec Corp Insulating-gate type field-effect transistor
JPS55102251A (en) * 1979-01-29 1980-08-05 Toshiba Corp Mos integrated circuit device
JPS5667959A (en) * 1979-11-05 1981-06-08 Mitsubishi Electric Corp Mos dynamic random access memory
JPS56103448A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Semiconductor ic device
JPS6066444A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
EP0321738B1 (de) 1994-09-07
EP0321738A3 (en) 1990-03-07
JPH022666A (ja) 1990-01-08
DE3851419T2 (de) 1995-01-19
EP0321738A2 (de) 1989-06-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee