DK1348553T3 - Ink-jet registreringshovedet og ink-jet printer - Google Patents

Ink-jet registreringshovedet og ink-jet printer

Info

Publication number
DK1348553T3
DK1348553T3 DK03006728T DK03006728T DK1348553T3 DK 1348553 T3 DK1348553 T3 DK 1348553T3 DK 03006728 T DK03006728 T DK 03006728T DK 03006728 T DK03006728 T DK 03006728T DK 1348553 T3 DK1348553 T3 DK 1348553T3
Authority
DK
Denmark
Prior art keywords
electronic device
ink
buffer layer
jet
layer
Prior art date
Application number
DK03006728T
Other languages
Danish (da)
English (en)
Inventor
Takamitsu Higuchi
Setsuya Iwashita
Hiromu Miyazawa
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DK1348553T3 publication Critical patent/DK1348553T3/da

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/03—Specific materials used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Semiconductor Memories (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ink Jet Recording Methods And Recording Media Thereof (AREA)
  • Ink Jet (AREA)
  • Liquid Crystal (AREA)
DK03006728T 2002-03-25 2003-03-25 Ink-jet registreringshovedet og ink-jet printer DK1348553T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002084327 2002-03-25
JP2003044370A JP4859333B2 (ja) 2002-03-25 2003-02-21 電子デバイス用基板の製造方法

Publications (1)

Publication Number Publication Date
DK1348553T3 true DK1348553T3 (da) 2007-12-17

Family

ID=27807011

Family Applications (1)

Application Number Title Priority Date Filing Date
DK03006728T DK1348553T3 (da) 2002-03-25 2003-03-25 Ink-jet registreringshovedet og ink-jet printer

Country Status (10)

Country Link
US (1) US6984843B2 (ja)
EP (1) EP1348553B1 (ja)
JP (1) JP4859333B2 (ja)
CN (1) CN1238193C (ja)
AT (1) ATE369986T1 (ja)
CY (1) CY1106880T1 (ja)
DE (1) DE60315535T2 (ja)
DK (1) DK1348553T3 (ja)
ES (1) ES2289198T3 (ja)
PT (1) PT1348553E (ja)

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JP4120589B2 (ja) * 2004-01-13 2008-07-16 セイコーエプソン株式会社 磁気抵抗効果素子及び磁気メモリ装置
WO2005104257A1 (en) * 2004-04-23 2005-11-03 Agency For Science, Technology And Research Micro-electromechanical device
CN101652505B (zh) * 2007-03-29 2012-05-30 株式会社藤仓 多晶薄膜和其制造方法及氧化物超导导体
US8097175B2 (en) * 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US20090152684A1 (en) * 2007-12-18 2009-06-18 Li-Peng Wang Manufacture-friendly buffer layer for ferroelectric media
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
JP2009208243A (ja) * 2008-02-29 2009-09-17 Seiko Epson Corp 圧電装置およびその製造方法、液体噴射ヘッド、並びに、プリンタ
JP4977640B2 (ja) * 2008-03-03 2012-07-18 富士フイルム株式会社 機能性酸化物構造体、及び機能性酸化物構造体の製造方法
JP4977641B2 (ja) * 2008-03-03 2012-07-18 富士フイルム株式会社 機能性酸化物構造体
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
WO2010097862A1 (ja) 2009-02-24 2010-09-02 パナソニック株式会社 半導体メモリセル及びその製造方法並びに半導体記憶装置
JP5491757B2 (ja) * 2009-03-27 2014-05-14 株式会社東芝 磁気抵抗素子および磁気メモリ
JP2011086903A (ja) * 2009-09-15 2011-04-28 Seiko Epson Corp 液体噴射ヘッド、液体噴射装置及び圧電素子
EP2617076B1 (en) * 2010-09-15 2014-12-10 Ricoh Company, Limited Electromechanical transducing device and manufacturing method thereof
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
TWI431641B (zh) * 2011-12-16 2014-03-21 Juant Technology Co Ltd 被動元件之結構
US10141497B2 (en) * 2012-07-31 2018-11-27 Hewlett-Packard Development Company, L.P. Thin film stack
JP2014154632A (ja) * 2013-02-06 2014-08-25 Rohm Co Ltd 多層構造体、コンデンサ素子およびその製造方法
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
JP6244865B2 (ja) * 2013-12-09 2017-12-13 船井電機株式会社 振動ミラー素子
JP6618168B2 (ja) * 2015-02-13 2019-12-11 新科實業有限公司ＳＡＥ Ｍａｇｎｅｔｉｃｓ（Ｈ．Ｋ．）Ｌｔｄ． 薄膜圧電体基板、薄膜圧電体素子およびその製造方法
JP6910631B2 (ja) * 2016-11-15 2021-07-28 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法
US11039814B2 (en) * 2016-12-04 2021-06-22 Exo Imaging, Inc. Imaging devices having piezoelectric transducers
JP6859805B2 (ja) * 2017-03-30 2021-04-14 Tdk株式会社 積層体、熱電変換素子
JP2019041054A (ja) * 2017-08-28 2019-03-14 東芝メモリ株式会社 半導体装置
JP7363067B2 (ja) * 2019-03-19 2023-10-18 株式会社リコー 圧電体薄膜素子、液体吐出ヘッド、ヘッドモジュール、液体吐出ユニット、液体を吐出する装置及び圧電体薄膜素子の製造方法
JP2022057129A (ja) * 2020-09-30 2022-04-11 株式会社リコー アクチュエータ、液体吐出ヘッド及び液体吐出装置

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JP3901894B2 (ja) 1999-11-29 2007-04-04 株式会社フジクラ 多結晶薄膜とその製造方法およびこれを用いた酸化物超電導導体
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Also Published As

Publication number Publication date
ES2289198T3 (es) 2008-02-01
CN1238193C (zh) 2006-01-25
JP2004002150A (ja) 2004-01-08
JP4859333B2 (ja) 2012-01-25
DE60315535T2 (de) 2008-05-21
CN1446690A (zh) 2003-10-08
US20030218644A1 (en) 2003-11-27
ATE369986T1 (de) 2007-09-15
DE60315535D1 (de) 2007-09-27
CY1106880T1 (el) 2012-09-26
US6984843B2 (en) 2006-01-10
EP1348553A1 (en) 2003-10-01
EP1348553B1 (en) 2007-08-15
PT1348553E (pt) 2007-10-23

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