DK0864171T3 - Dannelse af kontakter på halvledersubstrater til strålingsdetektorer og billedregistreringsindretninger - Google Patents

Dannelse af kontakter på halvledersubstrater til strålingsdetektorer og billedregistreringsindretninger

Info

Publication number
DK0864171T3
DK0864171T3 DK96941641T DK96941641T DK0864171T3 DK 0864171 T3 DK0864171 T3 DK 0864171T3 DK 96941641 T DK96941641 T DK 96941641T DK 96941641 T DK96941641 T DK 96941641T DK 0864171 T3 DK0864171 T3 DK 0864171T3
Authority
DK
Denmark
Prior art keywords
substrate
layer
forming
image sensing
sensing devices
Prior art date
Application number
DK96941641T
Other languages
Danish (da)
English (en)
Inventor
Olavi Orava Risto
Jouni Ilari Pyyhtia
Tom Gunnar Schulman
Miltiadis Evangelos Sarakinos
Konstantinos Evange Spartiotis
Panu Yrjaenae Jalas
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simage Oy filed Critical Simage Oy
Application granted granted Critical
Publication of DK0864171T3 publication Critical patent/DK0864171T3/da

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406Combination of charge coupled devices, i.e. CCD, or BBD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/93Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/958Passivation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
DK96941641T 1995-11-29 1996-11-26 Dannelse af kontakter på halvledersubstrater til strålingsdetektorer og billedregistreringsindretninger DK0864171T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9524387A GB2307785B (en) 1995-11-29 1995-11-29 Forming contacts on semiconductor substrates for radiation detectors and imaging devices
PCT/EP1996/005348 WO1997020342A1 (en) 1995-11-29 1996-11-26 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Publications (1)

Publication Number Publication Date
DK0864171T3 true DK0864171T3 (da) 2001-01-29

Family

ID=10784628

Family Applications (1)

Application Number Title Priority Date Filing Date
DK96941641T DK0864171T3 (da) 1995-11-29 1996-11-26 Dannelse af kontakter på halvledersubstrater til strålingsdetektorer og billedregistreringsindretninger

Country Status (17)

Country Link
US (2) US6046068A (el)
EP (2) EP1001469A3 (el)
JP (2) JP3540325B2 (el)
CN (1) CN1113392C (el)
AT (1) ATE198679T1 (el)
AU (1) AU713954B2 (el)
CA (1) CA2238827C (el)
DE (1) DE69611540T2 (el)
DK (1) DK0864171T3 (el)
ES (1) ES2154850T3 (el)
GB (1) GB2307785B (el)
GR (1) GR3035628T3 (el)
HK (2) HK1004243A1 (el)
IL (2) IL124656A0 (el)
NO (1) NO982444L (el)
PT (1) PT864171E (el)
WO (1) WO1997020342A1 (el)

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US6781132B2 (en) * 2001-08-10 2004-08-24 The Regents Of The University Of Michigan Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module
US7170062B2 (en) 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
GB0224689D0 (en) * 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
JP2006504258A (ja) 2002-10-25 2006-02-02 ゴールドパワー リミテッド 回路基板およびその製造方法
US7223981B1 (en) * 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7763820B1 (en) 2003-01-27 2010-07-27 Spectramet, Llc Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli
US20060033029A1 (en) * 2004-08-13 2006-02-16 V-Target Technologies Ltd. Low-voltage, solid-state, ionizing-radiation detector
CN1328598C (zh) * 2005-01-26 2007-07-25 上海大学 共面栅阳极碲锌镉探测器的制备方法
JP2008546177A (ja) * 2005-05-16 2008-12-18 Ii−Vi インコーポレイテッド 高性能のCdxZn1−xTe(0≦x≦1)のX線及びγ線の放射線検出器およびその製造方法
CA2541256A1 (en) * 2006-02-22 2007-08-22 Redlen Technologies Inc. Shielding electrode for monolithic radiation detector
GB0615452D0 (en) * 2006-08-03 2006-09-13 Radiation Watch Ltd Sensors
DE102006046314A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Strahlungsdirektkonvertermodul und Strahlungsdirektkonverter
US7589324B2 (en) * 2006-12-21 2009-09-15 Redlen Technologies Use of solder mask as a protective coating for radiation detector
US7462833B2 (en) * 2007-04-17 2008-12-09 Redlen Technologies Multi-functional cathode packaging design for solid-state radiation detectors
CN101720490B (zh) * 2007-06-29 2013-10-23 皇家飞利浦电子股份有限公司 用于碲化镉部件的电触点
US7955992B2 (en) * 2008-08-08 2011-06-07 Redlen Technologies, Inc. Method of passivating and encapsulating CdTe and CZT segmented detectors
US8614423B2 (en) * 2009-02-02 2013-12-24 Redlen Technologies, Inc. Solid-state radiation detector with improved sensitivity
US9202961B2 (en) 2009-02-02 2015-12-01 Redlen Technologies Imaging devices with solid-state radiation detector with improved sensitivity
JP2010210590A (ja) * 2009-03-12 2010-09-24 Fujifilm Corp 放射線検出器
WO2010132056A1 (en) 2009-05-14 2010-11-18 Neoprobe Corporation Stacked crystal array for detection of photon emissions
US8476101B2 (en) * 2009-12-28 2013-07-02 Redlen Technologies Method of fabricating patterned CZT and CdTe devices
US9000389B2 (en) * 2011-11-22 2015-04-07 General Electric Company Radiation detectors and methods of fabricating radiation detectors
WO2015157124A1 (en) * 2014-04-07 2015-10-15 Flir Systems, Inc. Method and systems for coupling semiconductor substrates
DE102014211602B4 (de) * 2014-06-17 2018-10-25 Siemens Healthcare Gmbh Detektormodul für einen Röntgendetektor
CN107735869A (zh) 2015-02-17 2018-02-23 瑞德兰科技有限公司 高性能辐射检测器和其制造方法
KR101835089B1 (ko) 2015-11-16 2018-03-08 주식회사 디알텍 방사선 검출장치와 이를 포함하는 방사선 촬영장치
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
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Also Published As

Publication number Publication date
EP1001469A2 (en) 2000-05-17
EP1001469A3 (en) 2000-09-06
WO1997020342A1 (en) 1997-06-05
DE69611540T2 (de) 2001-04-26
US6215123B1 (en) 2001-04-10
JP3540325B2 (ja) 2004-07-07
GB9524387D0 (en) 1996-01-31
JP2000516392A (ja) 2000-12-05
PT864171E (pt) 2001-05-31
GR3035628T3 (en) 2001-06-29
AU713954B2 (en) 1999-12-16
NO982444D0 (no) 1998-05-28
CN1113392C (zh) 2003-07-02
HK1010282A1 (en) 1999-06-17
NO982444L (no) 1998-07-29
GB2307785B (en) 1998-04-29
IL124656A0 (en) 1998-12-06
EP0864171B1 (en) 2001-01-10
CN1203695A (zh) 1998-12-30
DE69611540D1 (de) 2001-02-15
JP2003229555A (ja) 2003-08-15
ES2154850T3 (es) 2001-04-16
EP0864171A1 (en) 1998-09-16
US6046068A (en) 2000-04-04
AU1096797A (en) 1997-06-19
IL124656A (en) 2001-10-31
CA2238827A1 (en) 1997-06-05
ATE198679T1 (de) 2001-01-15
HK1004243A1 (en) 1998-11-20
CA2238827C (en) 2002-10-29
GB2307785A (en) 1997-06-04

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