DK0630422T3 - Fremgangsmåde til fremstilling af tynde film af uorganiske oxider med kontrolleret støkiometri - Google Patents

Fremgangsmåde til fremstilling af tynde film af uorganiske oxider med kontrolleret støkiometri

Info

Publication number
DK0630422T3
DK0630422T3 DK93912066.3T DK93912066T DK0630422T3 DK 0630422 T3 DK0630422 T3 DK 0630422T3 DK 93912066 T DK93912066 T DK 93912066T DK 0630422 T3 DK0630422 T3 DK 0630422T3
Authority
DK
Denmark
Prior art keywords
thin films
preparation
inorganic oxides
oxides
controlled stoichiometry
Prior art date
Application number
DK93912066.3T
Other languages
Danish (da)
English (en)
Inventor
Dean Willett Face
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Application granted granted Critical
Publication of DK0630422T3 publication Critical patent/DK0630422T3/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0381—Processes for depositing or forming superconductor layers by evaporation independent of heat source, e.g. MBE
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material
DK93912066.3T 1992-03-13 1993-03-10 Fremgangsmåde til fremstilling af tynde film af uorganiske oxider med kontrolleret støkiometri DK0630422T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85062192A 1992-03-13 1992-03-13
US98413492A 1992-12-09 1992-12-09

Publications (1)

Publication Number Publication Date
DK0630422T3 true DK0630422T3 (da) 1996-06-10

Family

ID=27126941

Family Applications (1)

Application Number Title Priority Date Filing Date
DK93912066.3T DK0630422T3 (da) 1992-03-13 1993-03-10 Fremgangsmåde til fremstilling af tynde film af uorganiske oxider med kontrolleret støkiometri

Country Status (13)

Country Link
US (1) US5389606A (zh)
EP (1) EP0630422B1 (zh)
JP (1) JP3451352B2 (zh)
KR (1) KR100276539B1 (zh)
AT (1) ATE137811T1 (zh)
CA (1) CA2131791A1 (zh)
DE (1) DE69302572T2 (zh)
DK (1) DK0630422T3 (zh)
ES (1) ES2087740T3 (zh)
GR (1) GR3020559T3 (zh)
HK (1) HK180596A (zh)
SG (1) SG76474A1 (zh)
WO (1) WO1993018200A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892243A (en) * 1996-12-06 1999-04-06 Trw Inc. High-temperature SSNS and SNS Josephson junction and method of making junction
JP3385889B2 (ja) * 1996-12-25 2003-03-10 株式会社日立製作所 強誘電体メモリ素子及びその製造方法
US6120857A (en) * 1998-05-18 2000-09-19 The Regents Of The University Of California Low work function surface layers produced by laser ablation using short-wavelength photons
US6129898A (en) * 1998-08-17 2000-10-10 Ford Global Technologies, Inc. NOx trap catalyst for lean burn engines
US7439208B2 (en) 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
US20100279124A1 (en) * 2008-10-31 2010-11-04 Leybold Optics Gmbh Hafnium or zirconium oxide Coating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
DE3726016A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial
DE3734069A1 (de) * 1987-10-08 1989-04-20 Siemens Ag Verfahren zur abscheidung von schichten aus einem oxidkeramischen supraleitermaterial auf einem substrat
DE3827069A1 (de) * 1987-11-21 1989-06-08 Asea Brown Boveri Verfahren zur herstellung eines supraleiters
DE3822502C1 (zh) * 1988-07-03 1989-08-24 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
KR950011339B1 (ko) * 1989-02-10 1995-09-30 미쓰비시 긴소꾸 가부시기가이샤 초전도 세라믹스막 형성용 타아겟재
DE4006489A1 (de) * 1990-03-02 1991-09-05 Hoechst Ag Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat

Also Published As

Publication number Publication date
EP0630422B1 (en) 1996-05-08
ATE137811T1 (de) 1996-05-15
US5389606A (en) 1995-02-14
KR950700436A (ko) 1995-01-16
SG76474A1 (en) 2000-11-21
JPH07505114A (ja) 1995-06-08
ES2087740T3 (es) 1996-07-16
KR100276539B1 (ko) 2000-12-15
DE69302572D1 (de) 1996-06-13
EP0630422A1 (en) 1994-12-28
CA2131791A1 (en) 1993-09-16
HK180596A (en) 1996-10-04
DE69302572T2 (de) 1996-12-05
JP3451352B2 (ja) 2003-09-29
GR3020559T3 (en) 1996-10-31
WO1993018200A1 (en) 1993-09-16

Similar Documents

Publication Publication Date Title
GB2220792B (en) Silicon thin film transistor and method for producing the same
DK353284D0 (da) Fremgangsmaade til kemisk dampafsaetning af titaniumnitrid og lignende film
AU1656888A (en) Method of forming superconductive thin films and solutions for forming the same
DK0464573T3 (da) Plaster med højt indhold af blødgørende indholdsstoffer
KR890015366A (ko) 반도체 박막형성법
DK0645352T3 (da) Transparent substrat med en følge af tynde lag med virkning på sol- eller infrarødstråling
DE68909270D1 (de) Halbleiter-Dünnschicht und Herstellungsverfahren.
EP0239958A3 (en) Thin film semiconductor device and method of manufacturing the same
NO890636D0 (no) Fremgangsmaate for fremstilling av en metallisert polyolefinfilm og en saaledes fremstilt film.
NO168118C (no) Fotonedbrytbare og varmestabile materialer, og anvendelseav disse i form av en film i en jordbruksprosess
GB8924601D0 (en) Method for manufacturing organic semiconductor thin film and semiconductor device comprising the thin film
DK0630422T3 (da) Fremgangsmåde til fremstilling af tynde film af uorganiske oxider med kontrolleret støkiometri
DE69116106T2 (de) Dünne ferroelektrische Schicht von höchster Reinheit
JPS5294381A (en) Biaxially stretched polypropylene composite film
DE69112520D1 (de) Supraleitende Dünnschicht-Oxydverbindung und Verfahren zu deren Herstellung.
NO873014D0 (no) Fremgangsmaate for fremstilling av dugg-hindrende forbindelser og filmer fremstilt derfra.
AU2603092A (en) Hydrosonically embedded soft thin film materials and process for forming said materials
EP0484251A3 (en) Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film and method for manufacturing the same
DE68914921T2 (de) Prozess zur Herstellung thalliumartiger supraleitender Dünnfilme.
DE3664793D1 (en) Chemical vapor deposition method for the thin film of semiconductor
EP0599699A3 (en) Method for the preparation of a thin superconductive film composed of a high temperature superconductive oxide.
AU3389689A (en) Semiconductor substrate having a superconducting thin film, and a process for producing the same
EP0519692A3 (en) Thin film transistor and method for manufacturing the same
DE69309830D1 (de) Supraleitende dünne Schicht und ihr Herstellungsverfahren
DE375594T1 (de) Herstellung duenner ferroelektrischer filme.