JP3451352B2 - 化学量論的関係を制御した無機酸化物の薄層フィルムの製造方法 - Google Patents

化学量論的関係を制御した無機酸化物の薄層フィルムの製造方法

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Publication number
JP3451352B2
JP3451352B2 JP51598293A JP51598293A JP3451352B2 JP 3451352 B2 JP3451352 B2 JP 3451352B2 JP 51598293 A JP51598293 A JP 51598293A JP 51598293 A JP51598293 A JP 51598293A JP 3451352 B2 JP3451352 B2 JP 3451352B2
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JP
Japan
Prior art keywords
oxide
film
volatile
deposition
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP51598293A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07505114A (ja
Inventor
フエイス，デイーン・ウイレツト
Original Assignee
イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPH07505114A publication Critical patent/JPH07505114A/ja
Application granted granted Critical
Publication of JP3451352B2 publication Critical patent/JP3451352B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0381—Processes for depositing or forming superconductor layers by evaporation independent of heat source, e.g. MBE
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material
JP51598293A 1992-03-13 1993-03-10 化学量論的関係を制御した無機酸化物の薄層フィルムの製造方法 Expired - Fee Related JP3451352B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US85062192A 1992-03-13 1992-03-13
US850,621 1992-03-13
US98413492A 1992-12-09 1992-12-09
US984,134 1992-12-09
PCT/US1993/002162 WO1993018200A1 (en) 1992-03-13 1993-03-10 Process for producing thin films of inorganic oxides of controlled stoichiometry

Publications (2)

Publication Number Publication Date
JPH07505114A JPH07505114A (ja) 1995-06-08
JP3451352B2 true JP3451352B2 (ja) 2003-09-29

Family

ID=27126941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51598293A Expired - Fee Related JP3451352B2 (ja) 1992-03-13 1993-03-10 化学量論的関係を制御した無機酸化物の薄層フィルムの製造方法

Country Status (13)

Country Link
US (1) US5389606A (zh)
EP (1) EP0630422B1 (zh)
JP (1) JP3451352B2 (zh)
KR (1) KR100276539B1 (zh)
AT (1) ATE137811T1 (zh)
CA (1) CA2131791A1 (zh)
DE (1) DE69302572T2 (zh)
DK (1) DK0630422T3 (zh)
ES (1) ES2087740T3 (zh)
GR (1) GR3020559T3 (zh)
HK (1) HK180596A (zh)
SG (1) SG76474A1 (zh)
WO (1) WO1993018200A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892243A (en) * 1996-12-06 1999-04-06 Trw Inc. High-temperature SSNS and SNS Josephson junction and method of making junction
JP3385889B2 (ja) * 1996-12-25 2003-03-10 株式会社日立製作所 強誘電体メモリ素子及びその製造方法
US6120857A (en) * 1998-05-18 2000-09-19 The Regents Of The University Of California Low work function surface layers produced by laser ablation using short-wavelength photons
US6129898A (en) * 1998-08-17 2000-10-10 Ford Global Technologies, Inc. NOx trap catalyst for lean burn engines
US7439208B2 (en) 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
US20100279124A1 (en) * 2008-10-31 2010-11-04 Leybold Optics Gmbh Hafnium or zirconium oxide Coating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH075435B2 (ja) * 1987-03-31 1995-01-25 住友電気工業株式会社 超電導薄膜の製造方法及び装置
DE3726016A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial
DE3734069A1 (de) * 1987-10-08 1989-04-20 Siemens Ag Verfahren zur abscheidung von schichten aus einem oxidkeramischen supraleitermaterial auf einem substrat
DE3827069A1 (de) * 1987-11-21 1989-06-08 Asea Brown Boveri Verfahren zur herstellung eines supraleiters
DE3822502C1 (zh) * 1988-07-03 1989-08-24 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
KR950011339B1 (ko) * 1989-02-10 1995-09-30 미쓰비시 긴소꾸 가부시기가이샤 초전도 세라믹스막 형성용 타아겟재
DE4006489A1 (de) * 1990-03-02 1991-09-05 Hoechst Ag Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat

Also Published As

Publication number Publication date
EP0630422B1 (en) 1996-05-08
ATE137811T1 (de) 1996-05-15
US5389606A (en) 1995-02-14
KR950700436A (ko) 1995-01-16
SG76474A1 (en) 2000-11-21
DK0630422T3 (da) 1996-06-10
JPH07505114A (ja) 1995-06-08
ES2087740T3 (es) 1996-07-16
KR100276539B1 (ko) 2000-12-15
DE69302572D1 (de) 1996-06-13
EP0630422A1 (en) 1994-12-28
CA2131791A1 (en) 1993-09-16
HK180596A (en) 1996-10-04
DE69302572T2 (de) 1996-12-05
GR3020559T3 (en) 1996-10-31
WO1993018200A1 (en) 1993-09-16

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