HK180596A - Process for producing thin films of inorganic oxides of controlled stoichiometry - Google Patents
Process for producing thin films of inorganic oxides of controlled stoichiometryInfo
- Publication number
- HK180596A HK180596A HK180596A HK180596A HK180596A HK 180596 A HK180596 A HK 180596A HK 180596 A HK180596 A HK 180596A HK 180596 A HK180596 A HK 180596A HK 180596 A HK180596 A HK 180596A
- Authority
- HK
- Hong Kong
- Prior art keywords
- thin films
- inorganic oxides
- producing thin
- controlled stoichiometry
- oxides
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0381—Processes for depositing or forming superconductor layers by evaporation independent of heat source, e.g. MBE
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/731—Sputter coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85062192A | 1992-03-13 | 1992-03-13 | |
US98413492A | 1992-12-09 | 1992-12-09 | |
PCT/US1993/002162 WO1993018200A1 (en) | 1992-03-13 | 1993-03-10 | Process for producing thin films of inorganic oxides of controlled stoichiometry |
Publications (1)
Publication Number | Publication Date |
---|---|
HK180596A true HK180596A (en) | 1996-10-04 |
Family
ID=27126941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK180596A HK180596A (en) | 1992-03-13 | 1996-09-26 | Process for producing thin films of inorganic oxides of controlled stoichiometry |
Country Status (13)
Country | Link |
---|---|
US (1) | US5389606A (zh) |
EP (1) | EP0630422B1 (zh) |
JP (1) | JP3451352B2 (zh) |
KR (1) | KR100276539B1 (zh) |
AT (1) | ATE137811T1 (zh) |
CA (1) | CA2131791A1 (zh) |
DE (1) | DE69302572T2 (zh) |
DK (1) | DK0630422T3 (zh) |
ES (1) | ES2087740T3 (zh) |
GR (1) | GR3020559T3 (zh) |
HK (1) | HK180596A (zh) |
SG (1) | SG76474A1 (zh) |
WO (1) | WO1993018200A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5892243A (en) * | 1996-12-06 | 1999-04-06 | Trw Inc. | High-temperature SSNS and SNS Josephson junction and method of making junction |
JP3385889B2 (ja) * | 1996-12-25 | 2003-03-10 | 株式会社日立製作所 | 強誘電体メモリ素子及びその製造方法 |
US6120857A (en) * | 1998-05-18 | 2000-09-19 | The Regents Of The University Of California | Low work function surface layers produced by laser ablation using short-wavelength photons |
US6129898A (en) * | 1998-08-17 | 2000-10-10 | Ford Global Technologies, Inc. | NOx trap catalyst for lean burn engines |
US7439208B2 (en) | 2003-12-01 | 2008-10-21 | Superconductor Technologies, Inc. | Growth of in-situ thin films by reactive evaporation |
US20100279124A1 (en) * | 2008-10-31 | 2010-11-04 | Leybold Optics Gmbh | Hafnium or zirconium oxide Coating |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH075435B2 (ja) * | 1987-03-31 | 1995-01-25 | 住友電気工業株式会社 | 超電導薄膜の製造方法及び装置 |
DE3726016A1 (de) * | 1987-08-05 | 1989-02-16 | Siemens Ag | Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial |
DE3734069A1 (de) * | 1987-10-08 | 1989-04-20 | Siemens Ag | Verfahren zur abscheidung von schichten aus einem oxidkeramischen supraleitermaterial auf einem substrat |
DE3827069A1 (de) * | 1987-11-21 | 1989-06-08 | Asea Brown Boveri | Verfahren zur herstellung eines supraleiters |
DE3822502C1 (zh) * | 1988-07-03 | 1989-08-24 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
KR950011339B1 (ko) * | 1989-02-10 | 1995-09-30 | 미쓰비시 긴소꾸 가부시기가이샤 | 초전도 세라믹스막 형성용 타아겟재 |
DE4006489A1 (de) * | 1990-03-02 | 1991-09-05 | Hoechst Ag | Vorrichtung zum herstellen duenner schichten aus metallmischoxiden aus organischen metallverbindungen auf einem substrat |
-
1993
- 1993-03-10 EP EP93912066A patent/EP0630422B1/en not_active Expired - Lifetime
- 1993-03-10 AT AT93912066T patent/ATE137811T1/de not_active IP Right Cessation
- 1993-03-10 DK DK93912066.3T patent/DK0630422T3/da active
- 1993-03-10 CA CA002131791A patent/CA2131791A1/en not_active Abandoned
- 1993-03-10 DE DE69302572T patent/DE69302572T2/de not_active Expired - Fee Related
- 1993-03-10 JP JP51598293A patent/JP3451352B2/ja not_active Expired - Fee Related
- 1993-03-10 WO PCT/US1993/002162 patent/WO1993018200A1/en active IP Right Grant
- 1993-03-10 ES ES93912066T patent/ES2087740T3/es not_active Expired - Lifetime
- 1993-03-10 SG SG1996008311A patent/SG76474A1/en unknown
- 1993-03-10 KR KR1019940703183A patent/KR100276539B1/ko not_active IP Right Cessation
- 1993-11-12 US US08/151,236 patent/US5389606A/en not_active Expired - Fee Related
-
1996
- 1996-07-17 GR GR960401928T patent/GR3020559T3/el unknown
- 1996-09-26 HK HK180596A patent/HK180596A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0630422B1 (en) | 1996-05-08 |
ATE137811T1 (de) | 1996-05-15 |
US5389606A (en) | 1995-02-14 |
KR950700436A (ko) | 1995-01-16 |
SG76474A1 (en) | 2000-11-21 |
DK0630422T3 (da) | 1996-06-10 |
JPH07505114A (ja) | 1995-06-08 |
ES2087740T3 (es) | 1996-07-16 |
KR100276539B1 (ko) | 2000-12-15 |
DE69302572D1 (de) | 1996-06-13 |
EP0630422A1 (en) | 1994-12-28 |
CA2131791A1 (en) | 1993-09-16 |
DE69302572T2 (de) | 1996-12-05 |
JP3451352B2 (ja) | 2003-09-29 |
GR3020559T3 (en) | 1996-10-31 |
WO1993018200A1 (en) | 1993-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU1656888A (en) | Method of forming superconductive thin films and solutions for forming the same | |
GB8915530D0 (en) | Silicon thin film transistor and method for producing the same | |
AU6820294A (en) | Method for the improved microwave deposition of thin films | |
TW348320B (en) | Ferroelectric member and process for producing the same | |
AU5748399A (en) | Method for growing oxide thin films containing barium and strontium | |
EP0517548A3 (en) | Chemical vapor deposition method for forming silicon oxide film | |
AU2485492A (en) | Process for forming low resistivity titanium nitride films | |
AU8616991A (en) | Films containing polyhydroxy acids | |
EP0535979A3 (en) | A thin film transistor and a method for producing the same | |
GB2224669B (en) | Organic semiconductor thin films | |
EP0612112A3 (en) | Semiconductor layer with chalcopyrite structure and manufacturing method. | |
EP0625401A3 (en) | Laser system for laser ablation process and thereby ablation process for the preparation of a thin layer of superconductive oxide material. | |
EP0328757A3 (en) | Method for manufacturing thin films from high tc oxide superconductors | |
SG76474A1 (en) | Process for producing thin films of inorganic oxides of controlled stoichiometry | |
CA2238857A1 (en) | Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same | |
EP0698932A3 (en) | Method for manufacturing a thin layer of high crystallinity oxide and apparatus for this method | |
EP0308869A3 (en) | Thin film of single crystalline lna2cu3o7-x having three-layered perovskite structure and process for producing the same | |
AU656025B2 (en) | Hydrosonically embedded soft thin film materials and process for forming said materials | |
AU7923091A (en) | Process and apparatus for preparing superconducting thin films | |
EP0325659A4 (en) | COMPLEX COMPOUNDS FOR FORMING THIN FILMS OF SUPERCONDUCTING OXIDE AND METHOD FOR FORMING THESE FILMS. | |
AU3389689A (en) | Semiconductor substrate having a superconducting thin film, and a process for producing the same | |
AU606807B2 (en) | A superconducting thin film and a process for depositing the same | |
EP0599699A3 (en) | Method for the preparation of a thin superconductive film composed of a high temperature superconductive oxide. | |
DE68914921T2 (de) | Prozess zur Herstellung thalliumartiger supraleitender Dünnfilme. | |
EP0519692A3 (en) | Thin film transistor and method for manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20050310 |