DE69942880D1 - Hochfrequenzverstärker - Google Patents

Hochfrequenzverstärker

Info

Publication number
DE69942880D1
DE69942880D1 DE69942880T DE69942880T DE69942880D1 DE 69942880 D1 DE69942880 D1 DE 69942880D1 DE 69942880 T DE69942880 T DE 69942880T DE 69942880 T DE69942880 T DE 69942880T DE 69942880 D1 DE69942880 D1 DE 69942880D1
Authority
DE
Germany
Prior art keywords
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69942880T
Other languages
English (en)
Inventor
Esko Jaervinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Oyj
Original Assignee
Nokia Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Oyj filed Critical Nokia Oyj
Application granted granted Critical
Publication of DE69942880D1 publication Critical patent/DE69942880D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/366—Multiple MOSFETs are coupled in parallel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21131—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the input bias voltage of a power amplifier being controlled, e.g. by a potentiometer or an emitter follower

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE69942880T 1998-03-13 1999-02-25 Hochfrequenzverstärker Expired - Lifetime DE69942880D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI980567A FI105611B (fi) 1998-03-13 1998-03-13 Radiotajuusvahvistimet

Publications (1)

Publication Number Publication Date
DE69942880D1 true DE69942880D1 (de) 2010-12-02

Family

ID=8551254

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69942880T Expired - Lifetime DE69942880D1 (de) 1998-03-13 1999-02-25 Hochfrequenzverstärker
DE69933160T Expired - Lifetime DE69933160T2 (de) 1998-03-13 1999-02-25 Hochfrequenzverstärker

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69933160T Expired - Lifetime DE69933160T2 (de) 1998-03-13 1999-02-25 Hochfrequenzverstärker

Country Status (5)

Country Link
US (1) US6052032A (de)
EP (2) EP1744448B1 (de)
JP (1) JPH11330866A (de)
DE (2) DE69942880D1 (de)
FI (1) FI105611B (de)

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JP3904817B2 (ja) * 2000-08-31 2007-04-11 株式会社ルネサステクノロジ 電力増幅器モジュール
JP3631426B2 (ja) * 2000-09-25 2005-03-23 株式会社東芝 高出力増幅器
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US6515546B2 (en) 2001-06-06 2003-02-04 Anadigics, Inc. Bias circuit for use with low-voltage power supply
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US6624700B2 (en) * 2001-06-29 2003-09-23 Koninklijke Philips Electronics N.V. Radio frequency power amplifier for cellular telephones
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DE10212165A1 (de) * 2002-03-19 2003-10-09 Infineon Technologies Ag Transistoranordnung
GB2386775B (en) * 2002-03-20 2004-09-29 Roke Manor Research A bias circuit for a bipolar transistor
WO2003081771A1 (en) * 2002-03-20 2003-10-02 Roke Manor Research Limited A bias circuit for a bipolar transistor
US6653902B1 (en) * 2002-09-03 2003-11-25 Triquint Semiconductor, Inc. Amplifier power control circuit
US7151814B1 (en) * 2002-11-07 2006-12-19 Applied Micro Circuits Corporation Hogge phase detector with adjustable phase output
JP3829121B2 (ja) * 2003-01-31 2006-10-04 株式会社東芝 電力増幅回路
JP4088177B2 (ja) * 2003-03-12 2008-05-21 株式会社東芝 バイアス電流供給回路及び増幅回路
US7057461B1 (en) * 2003-03-19 2006-06-06 Dynalinear Technologies, Inc. Heterostructure bipolar transistor power amplifier module with dynamic voltage supply for improved efficiency
US7148751B2 (en) * 2003-04-14 2006-12-12 M/A-Com, Inc. Handset radiofrequency front end module in fine pitch quad flat no lead (FQFP-N) package
US6819183B1 (en) * 2003-05-23 2004-11-16 Qualcomm, Incorporated Temperature and process compensation of MOSFET operating in sub-threshold mode
EP1517437A1 (de) * 2003-09-19 2005-03-23 Siemens Aktiengesellschaft HF-Leistungsverstärker mit Betriebsstrommesseinrichtung
US20050140439A1 (en) * 2003-12-26 2005-06-30 Hyoung Chang H. Predistortion linearizer for power amplifier
JP2005223437A (ja) 2004-02-03 2005-08-18 Nec Compound Semiconductor Devices Ltd バイアス回路
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JP2007281930A (ja) * 2006-04-07 2007-10-25 Matsushita Electric Ind Co Ltd バイアス回路
JP4733560B2 (ja) * 2006-04-25 2011-07-27 シャープ株式会社 電力増幅器及び無線通信装置
DE602006020022D1 (de) 2006-05-12 2011-03-24 St Microelectronics Srl Ausgangsleistungskontrolle eines Hochfrequenzverstärkers
JP4802062B2 (ja) * 2006-08-08 2011-10-26 株式会社東芝 半導体増幅装置
US7696826B2 (en) * 2006-12-04 2010-04-13 Skyworks Solutions, Inc. Temperature compensation of collector-voltage control RF amplifiers
JP4887131B2 (ja) * 2006-12-18 2012-02-29 パナソニック株式会社 電力増幅器
WO2008103375A2 (en) * 2007-02-19 2008-08-28 Mobileaccess Networks Ltd. Method and system for improving uplink performance
US8576085B2 (en) * 2010-01-15 2013-11-05 Tektronix, Inc. Capacitance-type liquid level measuring probe
WO2014103495A1 (ja) 2012-12-26 2014-07-03 株式会社村田製作所 高周波増幅回路
JP5821876B2 (ja) 2013-03-05 2015-11-24 株式会社村田製作所 電力増幅モジュール
JP5939404B2 (ja) 2013-03-19 2016-06-22 株式会社村田製作所 無線周波数増幅回路及び電力増幅モジュール
JP6187444B2 (ja) 2014-03-20 2017-08-30 株式会社村田製作所 電力増幅モジュール
JP2017028342A (ja) * 2015-07-15 2017-02-02 株式会社村田製作所 電力増幅モジュール
CN117397171A (zh) * 2021-05-26 2024-01-12 株式会社村田制作所 发送电路

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Also Published As

Publication number Publication date
DE69933160D1 (de) 2006-10-26
EP0942524B1 (de) 2006-09-13
EP0942524A3 (de) 2001-03-21
EP0942524A2 (de) 1999-09-15
FI980567A (fi) 1999-09-14
EP1744448A1 (de) 2007-01-17
FI105611B (fi) 2000-09-15
JPH11330866A (ja) 1999-11-30
US6052032A (en) 2000-04-18
DE69933160T2 (de) 2007-08-30
EP1744448B1 (de) 2010-10-20
FI980567A0 (fi) 1998-03-13

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