DE69938989D1 - Akustisches Oberflächenwellenfilter mit verbesserter Unterdrückung ausserhalb eines Durchlassbereichs - Google Patents

Akustisches Oberflächenwellenfilter mit verbesserter Unterdrückung ausserhalb eines Durchlassbereichs

Info

Publication number
DE69938989D1
DE69938989D1 DE69938989T DE69938989T DE69938989D1 DE 69938989 D1 DE69938989 D1 DE 69938989D1 DE 69938989 T DE69938989 T DE 69938989T DE 69938989 T DE69938989 T DE 69938989T DE 69938989 D1 DE69938989 D1 DE 69938989D1
Authority
DE
Germany
Prior art keywords
passband
wave filter
improved suppression
acoustic wave
suppression outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69938989T
Other languages
English (en)
Inventor
Osamu Kawachi
Masanori Ueda
Akira Suga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69938989D1 publication Critical patent/DE69938989D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6436—Coupled resonator filters having one acoustic track only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/644—Coupled resonator filters having two acoustic tracks
    • H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
    • H03H9/6469—Coupled resonator filters having two acoustic tracks being electrically coupled via two connecting electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
DE69938989T 1998-05-29 1999-05-25 Akustisches Oberflächenwellenfilter mit verbesserter Unterdrückung ausserhalb eines Durchlassbereichs Expired - Lifetime DE69938989D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15010098 1998-05-29

Publications (1)

Publication Number Publication Date
DE69938989D1 true DE69938989D1 (de) 2008-08-14

Family

ID=15489517

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69938989T Expired - Lifetime DE69938989D1 (de) 1998-05-29 1999-05-25 Akustisches Oberflächenwellenfilter mit verbesserter Unterdrückung ausserhalb eines Durchlassbereichs

Country Status (6)

Country Link
US (1) US6388545B1 (de)
EP (1) EP0961404B1 (de)
KR (1) KR100336302B1 (de)
CN (1) CN1185790C (de)
DE (1) DE69938989D1 (de)
TW (1) TW449965B (de)

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JP3339450B2 (ja) * 1999-03-02 2002-10-28 株式会社村田製作所 表面波装置の製造方法
JP3729081B2 (ja) * 2000-06-27 2005-12-21 株式会社村田製作所 弾性表面波装置
EP1320192A4 (de) * 2000-07-21 2009-11-04 Toshiba Kk Oberflächenwellenfilterbauelement
JP3711846B2 (ja) * 2000-07-27 2005-11-02 株式会社村田製作所 高周波モジュール及びそれを用いた移動体通信装置
DE10138335B4 (de) * 2000-07-28 2010-10-21 Kyocera Corp. Oberflächenwellen-Bauteil
US6700061B2 (en) * 2000-10-17 2004-03-02 Murata Manufacturing Co., Ltd. Composite electronic component
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JP3414387B2 (ja) * 2001-03-09 2003-06-09 株式会社村田製作所 弾性表面波装置、通信装置
JP2003060484A (ja) * 2001-08-14 2003-02-28 Murata Mfg Co Ltd 弾性表面波装置
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
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TWI315607B (en) * 2001-10-29 2009-10-01 Panasonic Corp Surface acoustic wave filter element, surface acoustic wave filter and communication device using the same
JP3747853B2 (ja) * 2002-01-08 2006-02-22 株式会社村田製作所 弾性表面波装置を備えた分波器
EP1475890A1 (de) * 2002-02-12 2004-11-10 Matsushita Electric Industrial Co., Ltd. Elastische oberflächenwellenvorrichtung
US6877209B1 (en) 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
US6846423B1 (en) 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
JP3764731B2 (ja) * 2002-10-18 2006-04-12 富士通メディアデバイス株式会社 多重モード弾性表面波フィルタ及び分波器
EP1427115A1 (de) * 2002-12-06 2004-06-09 TDK Corporation Antennenumschaltvorrichtung
JP4291115B2 (ja) * 2003-11-21 2009-07-08 富士通メディアデバイス株式会社 弾性表面波フィルタ及びそれを用いた無線装置
JP2005203889A (ja) * 2004-01-13 2005-07-28 Fujitsu Media Device Kk 弾性表面波デバイス
CN1670978B (zh) * 2004-02-26 2010-12-29 京瓷株式会社 电子装置的制造方法
US7750420B2 (en) * 2004-03-26 2010-07-06 Cypress Semiconductor Corporation Integrated circuit having one or more conductive devices formed over a SAW and/or MEMS device
JP3993579B2 (ja) * 2004-04-28 2007-10-17 富士通メディアデバイス株式会社 バランス出力型フィルタ
US7298231B2 (en) * 2004-05-27 2007-11-20 Kyocera Corporation Surface acoustic wave device and communication apparatus
JP4244865B2 (ja) * 2004-06-03 2009-03-25 セイコーエプソン株式会社 圧電発振器および電子機器
US7332986B2 (en) * 2004-06-28 2008-02-19 Kyocera Corporation Surface acoustic wave apparatus and communications equipment
KR100859097B1 (ko) * 2004-06-30 2008-09-17 가부시키가이샤 무라타 세이사쿠쇼 밸런스형 탄성파 필터 및 탄성파 필터 장치
JP4518870B2 (ja) * 2004-08-24 2010-08-04 京セラ株式会社 弾性表面波装置および通信装置
DE102005032058B4 (de) * 2005-07-08 2016-12-29 Epcos Ag HF-Filter mit verbesserter Gegenbandunterdrückung
JP5269301B2 (ja) * 2006-07-21 2013-08-21 太陽誘電株式会社 弾性表面波装置
US8330553B2 (en) * 2007-10-01 2012-12-11 Panasonic Corporation Duplexer
WO2009082012A1 (ja) * 2007-12-26 2009-07-02 Kyocera Corporation フィルタおよび通信装置
US8860553B2 (en) 2008-11-10 2014-10-14 Cornell University Self-powered, piezo-surface acoustic wave apparatus and method
KR20120035673A (ko) * 2010-10-06 2012-04-16 삼성전기주식회사 패키지기판
KR101598437B1 (ko) * 2015-05-07 2016-02-29 김봉원 샌드위치패널용 도어 제조방법
KR102653201B1 (ko) * 2016-03-30 2024-04-01 삼성전기주식회사 음향파 디바이스 및 그 제조방법
JP2021164142A (ja) * 2020-04-03 2021-10-11 株式会社村田製作所 高周波モジュール、高周波回路及び通信装置

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Also Published As

Publication number Publication date
US6388545B1 (en) 2002-05-14
KR19990088608A (ko) 1999-12-27
CN1239354A (zh) 1999-12-22
KR100336302B1 (ko) 2002-05-13
CN1185790C (zh) 2005-01-19
US20020039056A1 (en) 2002-04-04
TW449965B (en) 2001-08-11
EP0961404B1 (de) 2008-07-02
EP0961404A2 (de) 1999-12-01
EP0961404A3 (de) 2000-08-09

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU LTD., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: TAIYO YUDEN CO., LTD., TOKIO/TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE