DE69934028D1 - Schaltung gegen überströmen in einem leistungshalbleiter - Google Patents
Schaltung gegen überströmen in einem leistungshalbleiterInfo
- Publication number
- DE69934028D1 DE69934028D1 DE69934028T DE69934028T DE69934028D1 DE 69934028 D1 DE69934028 D1 DE 69934028D1 DE 69934028 T DE69934028 T DE 69934028T DE 69934028 T DE69934028 T DE 69934028T DE 69934028 D1 DE69934028 D1 DE 69934028D1
- Authority
- DE
- Germany
- Prior art keywords
- overstakes
- powerful
- surgery
- circuit against
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001356 surgical procedure Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1999/005158 WO2001022584A1 (fr) | 1999-09-20 | 1999-09-20 | Circuit anti-surtension pour semi-conducteur de puissance |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69934028D1 true DE69934028D1 (de) | 2006-12-28 |
DE69934028T2 DE69934028T2 (de) | 2007-06-21 |
Family
ID=14236764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69934028T Expired - Lifetime DE69934028T2 (de) | 1999-09-20 | 1999-09-20 | Schaltung gegen überströmen in einem leistungshalbleiter |
Country Status (6)
Country | Link |
---|---|
US (1) | US6633473B1 (de) |
EP (1) | EP1143618B1 (de) |
JP (1) | JP3590612B2 (de) |
KR (1) | KR100427923B1 (de) |
DE (1) | DE69934028T2 (de) |
WO (1) | WO2001022584A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112311235A (zh) * | 2019-07-25 | 2021-02-02 | 夏普株式会社 | 整流电路以及电源装置 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4219567B2 (ja) | 2001-04-03 | 2009-02-04 | 三菱電機株式会社 | 半導体装置 |
TW200523340A (en) | 2003-09-24 | 2005-07-16 | Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh | Hochefeizienter leuchtstoff |
US7310213B2 (en) * | 2003-09-26 | 2007-12-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device provided with overheat protection circuit and electronic circuit using the same |
EP1536563B1 (de) * | 2003-11-28 | 2007-01-17 | Delphi Technologies, Inc. | Lastschaltvorrichtung und Verfahren zur Diagnose eines Laststromkreises mit einer Lastschaltvorrichtung |
DE602004010487T2 (de) | 2004-03-31 | 2008-11-13 | Deutsche Thomson-Brandt Gmbh | Schaltungsanordnung für den Betrieb eines Schalttransistors |
US7375424B2 (en) * | 2005-05-03 | 2008-05-20 | International Rectifier Corporation | Wirebonded device packages for semiconductor devices having elongated electrodes |
JP4626513B2 (ja) * | 2005-12-28 | 2011-02-09 | 株式会社デンソー | ドライバ用半導体素子の過電流保護装置 |
JP2008042950A (ja) * | 2006-08-01 | 2008-02-21 | Mitsubishi Electric Corp | 電力変換装置 |
JP4432953B2 (ja) * | 2006-09-27 | 2010-03-17 | 株式会社日立製作所 | 半導体電力変換装置 |
JP2010045141A (ja) * | 2008-08-11 | 2010-02-25 | Fuji Electric Systems Co Ltd | 半導体装置および内燃機関用点火装置 |
JP5407398B2 (ja) * | 2009-02-12 | 2014-02-05 | 富士電機株式会社 | 半導体装置 |
JP5369300B2 (ja) * | 2009-09-16 | 2013-12-18 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN101741268B (zh) * | 2010-02-03 | 2013-04-24 | 西安民展微电子有限公司 | 交流/直流开关电源的脉宽调制控制电路 |
JP2015028969A (ja) * | 2013-07-30 | 2015-02-12 | 本田技研工業株式会社 | 半導体装置 |
US9882465B2 (en) * | 2013-11-14 | 2018-01-30 | Tm4 Inc. | Commutation cell, power converter and compensation circuit having dynamically controlled voltage gains |
DE102014202610A1 (de) * | 2014-02-13 | 2015-08-13 | Robert Bosch Gmbh | Stromdetektionseinrichtung und Verfahren zum Erfassen eines elektrischen Stroms |
DE102014202611A1 (de) * | 2014-02-13 | 2015-08-13 | Robert Bosch Gmbh | Schaltungsanordnung und Verfahren zur Strommessung |
DE112016003049T5 (de) * | 2016-02-17 | 2018-03-29 | Fuji Electric Co., Ltd. | Überstromschutzvorrichtung für halbleitervorrichtung |
GB2549934A (en) * | 2016-04-28 | 2017-11-08 | Reinhausen Maschf Scheubeck | Junction temperature and current sensing |
JP6569820B2 (ja) | 2016-10-14 | 2019-09-04 | 富士電機株式会社 | 電力素子の駆動回路 |
US11139808B2 (en) * | 2017-02-28 | 2021-10-05 | Mitsubishi Electric Corporation | Semiconductor device and power conversion system |
CN110521122B (zh) * | 2017-10-17 | 2023-06-13 | 富士电机株式会社 | 过电流检测装置、控制装置及过电流检测方法 |
KR102008277B1 (ko) * | 2017-10-31 | 2019-08-07 | 현대오트론 주식회사 | 전력 반도체 칩 |
US10432186B2 (en) * | 2017-11-14 | 2019-10-01 | Ford Global Technologies, Llc | Variable resistance power switch feedback |
JP7087371B2 (ja) * | 2017-12-18 | 2022-06-21 | 富士電機株式会社 | 半導体装置およびパワーモジュール |
US11394378B2 (en) * | 2018-03-05 | 2022-07-19 | Infineon Technologies Ag | Power switch with an integrated temperature and current sense circuit |
US10848053B2 (en) * | 2018-07-13 | 2020-11-24 | Kohler Co. | Robust inverter topology |
US10756532B2 (en) | 2018-07-13 | 2020-08-25 | Kohler Co. | Ground fault minimization |
JP7342408B2 (ja) * | 2019-04-15 | 2023-09-12 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2681990B2 (ja) | 1988-04-14 | 1997-11-26 | 株式会社デンソー | 保護機能を備えた半導体装置 |
JP3067448B2 (ja) | 1992-03-18 | 2000-07-17 | 富士電機株式会社 | 半導体装置 |
JP3052619B2 (ja) * | 1992-11-12 | 2000-06-19 | 富士電機株式会社 | カレントセンシング機能付半導体装置の制御回路装置 |
JPH06276071A (ja) * | 1993-03-23 | 1994-09-30 | Fuji Electric Co Ltd | 電力用トランジスタの過電流保護回路 |
US5444591A (en) * | 1993-04-01 | 1995-08-22 | International Rectifier Corporation | IGBT fault current limiting circuit |
KR950007167A (ko) | 1993-08-10 | 1995-03-21 | 이헌조 | 메스패트(mesfet) 제조방법 |
JP3982842B2 (ja) * | 1993-08-18 | 2007-09-26 | 株式会社ルネサステクノロジ | 半導体装置 |
GB9420572D0 (en) * | 1994-10-12 | 1994-11-30 | Philips Electronics Uk Ltd | A protected switch |
JPH08316472A (ja) | 1995-05-23 | 1996-11-29 | Hitachi Ltd | 電流供給回路 |
JPH0918310A (ja) | 1995-06-30 | 1997-01-17 | Hitachi Ltd | 絶縁ゲート半導体素子の過電流保護回路 |
JPH1032476A (ja) * | 1996-05-14 | 1998-02-03 | Fuji Electric Co Ltd | 過電流保護回路 |
WO1997045957A1 (fr) | 1996-05-28 | 1997-12-04 | Hitachi, Ltd. | Dispositif semiconducteur |
US5909135A (en) * | 1996-12-19 | 1999-06-01 | Texas Instruments Incorporated | High-side MOSFET gate protection shunt circuit |
JP3468067B2 (ja) | 1997-11-25 | 2003-11-17 | 株式会社日立製作所 | 電圧駆動型半導体素子の過電流抑制回路 |
-
1999
- 1999-09-20 KR KR10-2001-7006395A patent/KR100427923B1/ko active IP Right Grant
- 1999-09-20 US US09/807,952 patent/US6633473B1/en not_active Expired - Lifetime
- 1999-09-20 EP EP99943455A patent/EP1143618B1/de not_active Expired - Lifetime
- 1999-09-20 WO PCT/JP1999/005158 patent/WO2001022584A1/ja active IP Right Grant
- 1999-09-20 DE DE69934028T patent/DE69934028T2/de not_active Expired - Lifetime
- 1999-09-20 JP JP2001525843A patent/JP3590612B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112311235A (zh) * | 2019-07-25 | 2021-02-02 | 夏普株式会社 | 整流电路以及电源装置 |
CN112311235B (zh) * | 2019-07-25 | 2024-06-11 | 夏普株式会社 | 整流电路以及电源装置 |
Also Published As
Publication number | Publication date |
---|---|
JP3590612B2 (ja) | 2004-11-17 |
KR100427923B1 (ko) | 2004-05-06 |
WO2001022584A1 (fr) | 2001-03-29 |
EP1143618B1 (de) | 2006-11-15 |
DE69934028T2 (de) | 2007-06-21 |
KR20010107980A (ko) | 2001-12-07 |
EP1143618A1 (de) | 2001-10-10 |
US6633473B1 (en) | 2003-10-14 |
EP1143618A4 (de) | 2002-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |