DE69933681D1 - Ungleichmässige verteilung von minoritätsträger-lebensdauern in silizium-hochleistungsbauelementen - Google Patents

Ungleichmässige verteilung von minoritätsträger-lebensdauern in silizium-hochleistungsbauelementen

Info

Publication number
DE69933681D1
DE69933681D1 DE69933681T DE69933681T DE69933681D1 DE 69933681 D1 DE69933681 D1 DE 69933681D1 DE 69933681 T DE69933681 T DE 69933681T DE 69933681 T DE69933681 T DE 69933681T DE 69933681 D1 DE69933681 D1 DE 69933681D1
Authority
DE
Germany
Prior art keywords
high performance
minority carrier
carrier life
silicon high
performance components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69933681T
Other languages
English (en)
Other versions
DE69933681T2 (de
Inventor
J Falster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69933681D1 publication Critical patent/DE69933681D1/de
Publication of DE69933681T2 publication Critical patent/DE69933681T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69933681T 1998-08-05 1999-08-05 Ungleichmässige verteilung von minoritätsträger-lebensdauern in silizium-hochleistungsbauelementen Expired - Lifetime DE69933681T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9540798P 1998-08-05 1998-08-05
US95407P 1998-08-05
US9880898P 1998-09-02 1998-09-02
US98808P 1998-09-02
PCT/US1999/017726 WO2000008677A1 (en) 1998-08-05 1999-08-05 Non-uniform minority carrier lifetime distributions in high performance silicon power devices

Publications (2)

Publication Number Publication Date
DE69933681D1 true DE69933681D1 (de) 2006-11-30
DE69933681T2 DE69933681T2 (de) 2007-08-23

Family

ID=26790188

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69933681T Expired - Lifetime DE69933681T2 (de) 1998-08-05 1999-08-05 Ungleichmässige verteilung von minoritätsträger-lebensdauern in silizium-hochleistungsbauelementen

Country Status (7)

Country Link
EP (1) EP1110236B1 (de)
JP (2) JP4312385B2 (de)
KR (1) KR100498943B1 (de)
CN (1) CN1153262C (de)
DE (1) DE69933681T2 (de)
TW (1) TW425641B (de)
WO (1) WO2000008677A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6236104B1 (en) * 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US6897084B2 (en) 2001-04-11 2005-05-24 Memc Electronic Materials, Inc. Control of oxygen precipitate formation in high resistivity CZ silicon
JP4919700B2 (ja) * 2005-05-20 2012-04-18 トヨタ自動車株式会社 半導体装置及びその製造方法
US7485928B2 (en) 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
JP2008177296A (ja) * 2007-01-17 2008-07-31 Toyota Central R&D Labs Inc 半導体装置、ｐｎダイオード、ｉｇｂｔ、及びそれらの製造方法
JP2009177194A (ja) * 2009-03-19 2009-08-06 Sumco Corp シリコンウェーハの製造方法、シリコンウェーハ
JP5457613B1 (ja) * 2012-07-03 2014-04-02 新電元工業株式会社 半導体装置
JP6111572B2 (ja) 2012-09-12 2017-04-12 富士電機株式会社 半導体装置および半導体装置の製造方法
US9337058B2 (en) 2013-03-06 2016-05-10 Toyota Jidosha Kabushiki Kaisha Method for reducing nonuniformity of forward voltage of semiconductor wafer
US20140374882A1 (en) * 2013-06-21 2014-12-25 Infineon Technologies Austria Ag Semiconductor Device with Recombination Centers and Method of Manufacturing
DE102014107161B4 (de) * 2014-05-21 2019-10-31 Infineon Technologies Ag Verfahren zur Herstellung eines IGBTs und IGBT
CN108630614A (zh) * 2017-03-23 2018-10-09 扬州朗日新能源科技有限公司 一种防碰撞硅片及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259683A (en) * 1977-02-07 1981-03-31 General Electric Company High switching speed P-N junction devices with recombination means centrally located in high resistivity layer
JPS582449B2 (ja) * 1977-10-12 1983-01-17 シャープ株式会社 少数キヤリヤ拡散長の制御方法
JP2604580B2 (ja) * 1986-10-01 1997-04-30 三菱電機株式会社 アノード短絡形ゲートターンオフサイリスタ
JPS63205958A (ja) * 1987-02-21 1988-08-25 Matsushita Electric Works Ltd 静電誘導サイリスタ
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置
JPH01208830A (ja) * 1988-02-17 1989-08-22 Fujitsu Ltd シリコン・ウェハ
JP2725790B2 (ja) * 1988-08-12 1998-03-11 三洋電機株式会社 半導体装置の製造方法
JPH0262046A (ja) * 1988-08-26 1990-03-01 Mitsubishi Electric Corp 半導体装置
DE3912056A1 (de) * 1989-04-13 1990-10-18 Asea Brown Boveri Verfahren zum axialen einstellen der traegerlebensdauer
JPH04125933A (ja) * 1990-09-17 1992-04-27 Toshiba Corp 半導体装置の製造方法
JPH05102161A (ja) * 1991-07-15 1993-04-23 Toshiba Corp 半導体装置の製造方法とその半導体装置
DE69430913D1 (de) * 1994-07-25 2002-08-08 Cons Ric Microelettronica Verfahren zur lokalen Reduzierung der Ladungsträgerlebensdauer
JPH09260686A (ja) * 1996-03-25 1997-10-03 Toshiba Corp 半導体装置及びその製造方法
JPH09293729A (ja) * 1996-04-27 1997-11-11 Denso Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN1153262C (zh) 2004-06-09
JP4312385B2 (ja) 2009-08-12
JP2002522901A (ja) 2002-07-23
EP1110236B1 (de) 2006-10-18
KR20010087171A (ko) 2001-09-15
CN1317149A (zh) 2001-10-10
DE69933681T2 (de) 2007-08-23
WO2000008677A1 (en) 2000-02-17
TW425641B (en) 2001-03-11
JP2009239269A (ja) 2009-10-15
JP5405856B2 (ja) 2014-02-05
KR100498943B1 (ko) 2005-07-04
EP1110236A1 (de) 2001-06-27

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