DE19881806D2 - Optimierter Randabschluss von Halbleiter-Bauelementen - Google Patents

Optimierter Randabschluss von Halbleiter-Bauelementen

Info

Publication number
DE19881806D2
DE19881806D2 DE19881806D DE19881806D DE19881806D2 DE 19881806 D2 DE19881806 D2 DE 19881806D2 DE 19881806 D DE19881806 D DE 19881806D DE 19881806 D DE19881806 D DE 19881806D DE 19881806 D2 DE19881806 D2 DE 19881806D2
Authority
DE
Germany
Prior art keywords
semiconductor components
edge termination
optimized edge
optimized
termination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19881806D
Other languages
English (en)
Other versions
DE19881806B4 (de
Inventor
Roland Sittig
Detlef Nagel
Ralf-Ulrich Dudde
Bernd Wagner
Klaus Reimer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority claimed from DE19881806A external-priority patent/DE19881806B4/de
Application granted granted Critical
Publication of DE19881806D2 publication Critical patent/DE19881806D2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE19881806D 1997-11-24 1998-11-23 Optimierter Randabschluss von Halbleiter-Bauelementen Expired - Lifetime DE19881806D2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19752020 1997-11-24
DE19881806A DE19881806B4 (de) 1997-11-24 1998-11-23 Optimierter Randabschluss von Halbleiter-Bauelementen
PCT/DE1998/003453 WO1999027582A2 (de) 1997-11-24 1998-11-23 Optimierter randabschluss von halbleiter-bauelementen

Publications (1)

Publication Number Publication Date
DE19881806D2 true DE19881806D2 (de) 2000-08-24

Family

ID=7849660

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19881806D Expired - Lifetime DE19881806D2 (de) 1997-11-24 1998-11-23 Optimierter Randabschluss von Halbleiter-Bauelementen

Country Status (5)

Country Link
US (3) US6426540B1 (de)
EP (1) EP1036418A2 (de)
JP (1) JP2001524756A (de)
DE (1) DE19881806D2 (de)
WO (1) WO1999027582A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001524756A (ja) * 1997-11-24 2001-12-04 フラウンホーファー−ゲゼルシャフト ツル フェルデング デル アンゲヴァンテン フォルシュング エー．ファー． 半導体素子の最適化されたエッジ終端部
US6301051B1 (en) * 2000-04-05 2001-10-09 Rockwell Technologies, Llc High fill-factor microlens array and fabrication method
US7362697B2 (en) 2003-01-09 2008-04-22 International Business Machines Corporation Self-healing chip-to-chip interface
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
JP5625336B2 (ja) * 2009-11-30 2014-11-19 サンケン電気株式会社 半導体装置
CN102184947A (zh) * 2011-03-15 2011-09-14 上海集成电路研发中心有限公司 一种高压半导体结构及其制备方法
US9196560B2 (en) 2013-10-31 2015-11-24 Infineon Technologies Austria Ag Semiconductor device having a locally reinforced metallization structure and method for manufacturing thereof
CN112701165A (zh) * 2019-10-22 2021-04-23 珠海格力电器股份有限公司 碳化硅二极管及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3706128A (en) * 1970-06-30 1972-12-19 Varian Associates Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor
DE3219606A1 (de) * 1982-05-25 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schottky-leistungsdiode
DE3220250A1 (de) 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit planarstruktur
JPS61181414A (ja) 1985-02-07 1986-08-14 松下電器産業株式会社 電動調理器
EP0237844A1 (de) 1986-03-18 1987-09-23 BBC Brown Boveri AG Verfahren zur Herstellung einer Abdeckschicht für die Halbleitertechnik sowie Verwendung der Abdeckschicht
JPS6338259A (ja) * 1986-08-01 1988-02-18 Fujitsu Ltd 半導体装置
KR0154702B1 (ko) * 1995-06-09 1998-10-15 김광호 항복전압을 향상시킨 다이오드 제조 방법
DE19535322A1 (de) 1995-09-22 1997-03-27 Siemens Ag Anordnung mit einem pn-Übergang und einer Maßnahme zur Herabsetzung der Gefahr eines Durchbruchs des pn-Übergangs
SE9700156D0 (sv) * 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
JP2001524756A (ja) * 1997-11-24 2001-12-04 フラウンホーファー−ゲゼルシャフト ツル フェルデング デル アンゲヴァンテン フォルシュング エー．ファー． 半導体素子の最適化されたエッジ終端部

Also Published As

Publication number Publication date
US6426540B1 (en) 2002-07-30
EP1036418A2 (de) 2000-09-20
US20020140046A1 (en) 2002-10-03
WO1999027582A2 (de) 1999-06-03
US20040129993A1 (en) 2004-07-08
JP2001524756A (ja) 2001-12-04
US6956249B2 (en) 2005-10-18
WO1999027582A3 (de) 1999-07-15

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