US20020140046A1 - Optimized junction termination of semiconductor components - Google Patents
Optimized junction termination of semiconductor components Download PDFInfo
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- US20020140046A1 US20020140046A1 US10/127,636 US12763602A US2002140046A1 US 20020140046 A1 US20020140046 A1 US 20020140046A1 US 12763602 A US12763602 A US 12763602A US 2002140046 A1 US2002140046 A1 US 2002140046A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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Abstract
The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10 a , 10 b , 10 c , 10 d , 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30 a , 30 b , 30 c , 30 d , 31 b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30 a , 30 b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10 a , . . . , 11) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings (1, 31, MET1; 3, MET2) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.
Description
- In semiconductor components having at least one blocking p-n junction, the latter appears on the surface of the substrate, on which and in which the semiconductor component is realized, somewhere between the live contacts. In said surfacing areas high electric field strengths, in case the p-n junction is blocking, i.e. a higher voltage is applied to the cathode than to the anode or a controllable semiconductor device is not yet connected through its gate terminal, result in undesired leaking currents flowing between the anode and the cathode, which currents are designated as positive or negative reverse bias current depending on the direction of polarization of the voltage to be blocked or reversed. For reducing that portion of the reverse bias currents, which is caused by high field strengths in the termination portion, so-called “junction terminations” are employed in the prior art, which, for example in the form of specially formed field plates, cause an optimized course of equipotential lines and thus avoid high field strengths in the termination portion of such components, cf. DE-A 195 35 332 (Siemens),
column 3, line 58 to column 4, line 35; or “Multistep Field Plates . . . ”,IEEE Transactions on electron. devices, Vol. 39, No. 6, June 1992, from page 1514 onwards; “The Contour of an Optimal Field Plate”, IEEE Transactions on electron. devices, Vol. 35, No. 5, May 1988, from page 684 onwards; and finally “Theoretical Investigation of Planar Junction Termination”, Solid-State Electronics, Vol. 39, No. 3, pages 323 to 328, 1996. The planar junction terminations described therein are optimized with regard to their geometry, on the one hand as a field plate having steps and on the other hand as an optimized steadily curved field plate having a modified elliptical geometry. However, the prior art has not yet succeeded in economically fabricating the optimized geometric structure of a field plate in the termination portion of a semiconductor component capable of blocking, especially of such a component to which a high voltage of more than 500 V can be applied. - It is the object of the invention to fabricate the aforementioned semiconductor components, which are in particular highly blocking or capable of blocking, on an economic basis, i.e. at low costs, and nevertheless utilize their maximum blocking capacity.
- This is achieved by the invention, if a termination portion of the inner anode metallic coating comprises an insulator profile, having a shape which begins flat and is curved outwards and upwards in a steadily increasing manner, which portion is the “curved portion” of the insulator profile, and having a “base portion”, which is located directly adjacent thereto and is virtually planar, said base portion together with the curved portion determining the cross-section of the insulator profile.
- The insulator profile is designed such that, between the curved inner metallic coating, outwardly extending the anode, and the outer metallic coating, located outwards of and adjacent to the base portion of the insulator profile, which will in most cases be the cathode, peak values of an electric field generated during operation can be avoided. The insulator profile is produced by a method, in which an Sat first deposited insulator layer having a thickness is additionally covered with a resist layer over the entire substrate, which resist layer is illuminated through a mask in a structured manner, which mask changes in its gray-tone value in accordance with the desired course of curvature in the curved portion of the respective insulator profile. The gray-tone value in the mask is transferred into the resist layer by e exposure, which layer can be structured subsequent thereto, especially by developing, in order to then transfer the structure of the developed resist layer into the insulator layer having a thickness by an etching process, such as RIE (reactive ion etching), wherein it is an advantage if the etching rate of the insulator layer and the etching rate of the resist remainders, remaining after developing the exposed resist layer, are about equal in order to prevent a not-to-shape transfer of the resist profile into the insulator.
- The resulting insulator profiles can either surround the anode in the form of a wall or a plurality of insulator profiles may be provided which are arranged in an outwards staggered manner and the curved surface of which is differently shaped. If a plurality of staggered insulator profiles is provided (
claim 2, claim 3), the curvature of the surfaces of the curved portions is not equal, but steadily increases with each profile being located further outwards (claim 3). - On the mentioned respective curved surfaces metallic coatings are deposited, which, for the insulator profile outwardly adjoining the inner anode, conductingly pass over into the anode metallic coating.
- The structuring, which is coded in its gray-tone value, is performed, during exposure, such that a desired light-intensity profile is coded into the mask by the semitone process, i.e. via a pixel screen, and that the pixel sizes are transferred below the resolving limit of a reducing projection exposure in an almost continuous course of exposure of the resist layer, by which it is thus possible to produce continuous surfaces curving outwards and upwards; the insulator profiles formed according to the invention thus have at least one continuous surface (without steps) steadily extending across a substantial area, which surface is designed in a manner which theoretical calculations for an optimized course of flux lines, when a reverse bias voltage load or conducting-state blocking load is applied, imply to be favorable.
- By use of the invention the thickness of the insulator layer can be continuously varied in a process in a predetermined and controlled manner over a wide area of up to 10 μm; it is not necessarily required to give the surface curvature an ideal course as long as it is ensured that the substantial increases of field strength can be avoided and that the reverse bias voltage load at the termination of the anode towards the cathode does not include substantial peak values.
- Even with semiconductor components having reverse bias voltages of more than approx. 500 V, the theoretically maximally possible reverse bias voltage can almost be achieved at minimum space requirements for the junction termination, i.e. the “blocking capacity” of the occupied space can be fully utilized. The minimum space requirements are important in said components, a plurality of which is produced from one wafer, and wherein utilizing the blocking capacity to a maximally possible extent becomes the more important the higher the reverse bias voltages are. Said aspects are of particularly great importance for highly blocking IGBTs.
- Even with Schottky diodes, which are not based on a p-n junction, but which utilize the blocking capacity of a metal-semiconductor junction, the insulator profiles produced according to the invention may be employed in an advantageous manner. At the edge of the metal-semiconductor junction the small effective radii of curvature would result in excessive field increases. For preventing said increases, diffused guard rings are employed in the prior which, however, at strong conducting-state loads, cause an undesired injection of minority charge carriers. By use of the insulator profiles and field plates produced according to the invention such an injection of charge carriers does not occur and the diffusion process during production can be omitted.
- The use of the invention, which is limited to measures performed at the surface of the semiconductors, is particularly advantageous even if the power semiconductors are to be improved on the basis of silicon carbide (SiC), as an example for a semiconductor having a high band width (claim 12). In said semiconductors a very low diffusion constant for doting substances must be put up with and this being the reason why termination portions can virtually not be produced by diffusion.
- The component, with the insulator profiles produced according to the invention, comprises profiles which, at the transition to the anode, do not terminate in a continuous or steady manner, but terminate with a small step in the order of magnitude of more than 5 nm and less than 50 nm. Said step being very small compared to the thickness of the metallic coating and is virtually of no consequence, but results from the method of production by gray-tone lithography. Thus, the metallic coating may, for example, have a thickness of approx. 1 μm, while the “step” of the insulator at the end of the curved portion of the
insulator 20 produced by gray-tone lithography is 20 nm. - Gray-tone lithography works in such a manner that the substrate is covered with an insulator layer, which is at first covered with a photosensitive layer, which is exposed in such a manner that the course of curvature of the surface of the insulator profile is exposed into the photoresist layer by gray-tone variation, i.e. by adapting the light-intensity distribution to the shape of the insulator profile, which photoresist layer is structured subsequent thereto by developing (claim 11). The photoresist layer structured in such a manner now consists of resist remainders only, forming blocks on the insulator layer, which blocks correspond to the insulator profiles. By means of an etching technique, for example a dry-etching process, the resist remainder still present on the substrate surface is conformally etched into the insulator layer, wherein the insulator layer is substantially planely removed and is more extensively removed where there are no resist remainders (claim 6).
- The transfer by shape is promoted if the etching rates of the resist remainders and the insulator layer are equal; if they are not equal the shape of the resist remainder must be adapted accordingly, which may be effected by adapting the intensity distribution during exposure.
- The height of the insulator profile in the base portion can be selected to be higher or lower (claim 4, claim 5). If the insulator profile has a height of more than approx. 5 μm in the base portion, the slope at the end of the curved portion at the transition to the base portion is more than 10°. The curved portion ends steeper here than in the insulator profile, which is flat in the base portion (claim 5). In a higher base portion the normal extension of the base portion is substantially ten times the height of the base portion, preferably even more.
- If a more flat base profile, which is easier to fabricate by gray-tone lithography, is selected (claim 5), an additional screen electrode, which is located above the anode potential of the inner metallic coating, can be formed above the junction termination. The lateral extension of the base portion is a multiple of the height of the base portion here, in particular more than 50 times to 200 times the height of the base portion, which especially has a height of 2 μm. Between the end of the curved portion and the beginning of the upward curvature of the additional screen electrode (hood) there is an intermediate region, which, in its extension, is adapted substantially to the radius of curvature of the curved lateral outer end of the hood, in which intermediate region the distance between the hood, which follows a substantially horizontal path here, and the surface of the base portion is substantially constant.
- The curved portion of the hood is preferably a quarter circle (claim 7). Its curvature can be considerably more pronounced than that of the surface of the curved portion within the base portion of the insulator profile.
- The region between the anode metallic coating and the outer cathode metallic coating, i.e. the region of one or more staggered insulator profiles, can be covered in an elevated manner with a wall-like casting compound, in order to prevent flashover (claim 9).
- If insulator profiles arranged in an outwards staggered manner are provided (
claims 2, 3), below each of the staggered metallic coatings, extending beginning from the outer end of the base portion of the insulator profile located further inwards up to the upper end of the curved portion of the base profile located further outwards, a strip-shaped compensating area can be provided in the substrate, which is diffused into the substrate and which transfers the potential present at the respective location when a voltage is applied from the substrate area to the respective metallic coating (claim 10). The doting of said strip-shaped zones diffused into the substrate substantially corresponds to the doting which is selected for a p+ region below the anode metallic coating. - The penetration depth of the diffused zones below the metallic coating is preferably only low, preferably less than 10 μm, which technologically does not give rise to field peaks. The p+ diffusion zones transfer their potential to the respective metallic coating curving outwards and upwards (away from the substrate).
- The lateral extension of the metallic curved portions should be adjusted to the space-charge depth and at the same time correspond to twice to three times the space-charge depth.
- The invention(s) are described and completed in the following by means of a number of embodiments.
- FIG. 1 shows. in section, a cutout of an active part of a semiconductor component capable of blocking, here a diode having an
anode 1 and acathode - FIG. 2a is an illustration of the structuring of a
photoresist layer 20, which is at first present over the entire surface and which, after structuring (by exposure), is conformally transferred into theinsulator 10 having the illustrated shape 20 a, by the showndry etching process 60, here a reactive ion etching (RIE) process. - FIG. 2b is, corresponding to FIG. 2a, an illustration of staggered
resist profiles insulator 10, wherein it is just begun, byreactive ion etching 60, to conformally transfer the resist remainders (resist profiles), already having the shape of desired insulator profiles, into theinsulator layer 10. - FIG. 3a is a section through a finished junction termination, produced after completion of the
reactive ion etching 60 according to FIG. 2a and which, by ametallic coating 30 a, extends the anodemetallic coating 1 in the curved portion KB of theinsulator profile 10 a. Theinsulator profile 10 a has a width corresponding to approx. 10 times to 15 times the height h10. For example, a selected height of 10 μm results in a lateral extension of the profile of 100 μm, which is, however, highly dependent on the desired reverse bias voltage. - FIG. 3b is a result of the completed method of production for the staggered insulator profiles, which were begun to be transferred into the
insulator layer 10 in FIG. 2b. For example, three outwards staggered insulator profiles 10 b, 10 c, 10 d are produced, the curvatures of which are steeper towards the outside. Also in this case the figure is only a schematic illustration, wherein the intersection lines “S” remove a large region of unchanged shape. - FIG. 4 and
- FIG. 4a are illustrations of a more
flat insulator profile 11, which, at the inner end towards theanode 31, has asmall step 11 s having a height “d”, which is shown more clearly in the enlarged illustration of FIG. 4a. Said step has a height of less than 50 nm, which height is preferably in an order of magnitude of between 20 nm and 30 nm, with ametallic coating metallic screen 32, which, starting from the anodemetallic coating 31, is formed in the manner of a hood and is curved 32 a laterally outwards and upwards adjacent to the curvature of the metallic coating having an ellipse-like form. A castingcompound 41 insulates the region between anode,metallic hood 32 andcathode 3, outwards of the end of the insulator profile, which here has lateral dimensions of approx. 50 times to 200 1times the height of theprofile 1 in the base portion. - FIG. 5 schematically illustrates the structure of an insulator profile produced by gray-tone lithography including the curved portion KB and the extensively extending base portion SB, the latter having an about constant height “h”, whereas the curved portion steadily decreases from said constant height towards the anode, where, preferably by a
small step 11 s, it reaches the level of thesubstrate 9. A metallic coating MET1 is deposited in the curved portion, which coating extends the anodemetallic coating - FIG. 6 is an approx. true to scale illustration of the arrangement of FIG. 4 with the insulator profile having a flat base portion SB.
- The semiconductor component capable of blocking of FIG. 1 is provided with intersection regions S so that only cutouts of the actual lateral extension of this semiconductor component can be seen herein. Two essential regions are the
anode region 1 and the junction termination, being provided with an insulator profile here, which will be described in more detail with respect to FIGS. 3a and 3 b. The relevant cutout AV is illustrated in more detail and to a larger scale therein. - Below the
anode 1, which is formed by a metallic coating, there is a p+ region of high doting concentration, which is to be considered virtually as a metallic region. In the termination portion themetallic coating 1 changes in form of an upwards curved field plate, which curvature is determined by the profile shape of the insulator in the cutout region AV. Outwards of the insulator profile thecathode 3 is provided as well as on the opposite side of asubstrate 9, which forms the semiconductor component. Below the outermetallic coating 3 there is achannel stop 7, which is formed as an n+ region of high concentration diffused into the substrate. The cutout AV of FIG. 1 is shown enlarged in FIGS. 3a and 3 b. - In FIG. 3a the termination portion of the
anode 1 with thep+ region 8 arranged underneath is an upwards curvedmetallic coating 30 a. It is covered by a wall-like casting compound 40 extending above theinsulator profile 10 a and reaching as far as the outermetallic coating 3 above thechannel stop 7. Also in this case the junction termination is arranged on thesubstrate 9. - The
insulator profile 10 a is to be divided, for reasons of illustration, into a curved portion KB and a base portion SB, wherein the curved portion KB is located below the outwards and upwards curvedmetallic coating 30 a as a continuation of the anodemetallic coating 1 and the base portion SB is located outwards of the outer end of said extended curvedmetallic coating 30 a having a substantially constant height h10. - In FIG. 3b a number of the shapes shown in FIG. 3a are arranged in a staggered manner. Herein the insulator profile is lower in the base portion SB than in FIG. 3a. In the illustrated example, three
base profiles metallic coating metallic coating 30 c than in the firstmetallic coating 30 b and is larger in the thirdmetallic coating 30 d than in the secondmetallic coating 30 c. - Starting from the
inner anode 1, the first curvedmetallic coating 30 b is located directly adjacent thereto. Outwards of thefirst insulator profile 10 b, located below it, is the second curvedmetallic coating 30 c, which includes ahorizontal region 1′, below which ap+ zone 7 b is diffused into the substrate. Said zone will transfer the potential present at the component at the respective location when a voltage is applied from thesubstrate area 9 to themetallic coating 1′ so that outwards staggered potentials will be defined, which are suspected by the metallic coatings and result in a field strength march in the curved portion, which largely avoids peak values. Accordingly, also the horizontal orientation of themetallic coating 1 located further outwards is provided horizontally above a further p+zone 7 a, being diffused into the substrate and extending towards thecurved portion 30 d, which has already been explained. Outwards of theoutermost insulator profile 10 d the cathodemetallic coating 3 is provided including achannel stop 7, as illustrated in FIG. 3a. The respective intersection regions S cut out those regions, which have a far lateral extension and in which no change of shape is provided. - The
zones - The semiconductor according to FIG. 3b is very cost-effective with regard to production since the insulator profiles have a low height h10 only in the base portion SB. The height h10 will be less than 5 μm, preferably in the order of magnitude of 2 μm.
- During operation, when a reverse bias voltage or blocking voltage is applied, the described three staggered metallic coatings, from the
anode 1 over thefirst stage 1′ including thecurved portion 30 c and over thesecond stage 1″ including thecurved portion 30 d, have different potentials, which are transferred by the potential-transmittingzones zones substrate 9 are chosen such that each of them begins internal of and below the outer end portion of the base portion of the insulator profile and extends outwards up to approx. that region, in which the insulator profile located further outwards with its curved portion KB begins to emerge or increase in height. - The production of the geometries according to FIGS. 3a and 3 b will be explained with reference to FIGS. 2a and 2 b.
- FIG. 2a shows the
substrate 9 having aninsulator layer 10 formed thereon, usually made of silicon oxide. In FIG. 2a the starting point is illustrated, at which a shape 20 a of a resist profile or resist remainder formed after structuring (by exposure) is conformally transferred from aphotoresist layer 20, present over the entire surface (illustrated by dashed lines), into theinsulator layer 10 located below it. As the etching process a dry etching process, here a reactive ion etching byion radiation 60, is illustrated. Prior thereto an area 8 (p+ diffusion area), diffused into thesubstrate 9 below the anode to be formed, and achannel stop 7, diffused in to the substrate and having an n+ diffusion area (outwards of the resist profile to be formed), are provided. On the thusprepared substrate 9 aninsulator 10 is uniformly applied, substantially having the height, which a future resist profile is to have in the base portion SB of FIG. 3a. An additional resistlayer 20 is deposited on the insulator profile, which layer is at first illuminated through a mask in a structured manner, which mask changes in its gray-tone value in accordance with the respective course of curvature in the curved portion KB of the insulator profile. The gray-tone value present in the mask (not shown) is transferred by exposure into the resistlayer 20, which is structured subsequent thereto (especially by developing) in order to then transfer, by means of the etching process illustrated in FIG. 2a, the resist remainders remaining after exposure and development into theinsulator layer 10, wherein, figuratively speaking, the surface of the resistlayer 20 present so far is lowered onto the surface of the substrate, i.e. the remaining resist relief 20 a, as the insulator profile, is (figuratively speaking) lowered into the insulator layer. Theinsulator 10 is removed in those regions where there are no resist blocks and is removed to a minor extent where the height of the resist remainder 20 a is low, whereas in those regions where the resist remainder 20 a is to form the base portion SB little to nothing is removed from the insulator height. Thus, after the conformal projection of the resistremainder 20 into theinsulator layer 10, a shape of theinsulator profile 10 a having a curved portion KB and a base portion SB is produced, as is shown in FIG. 3a, however, yet withoutmetallic coatings like casting compound 40, in order to complete the junction termination. - For the conformal projection it is advantageous to substantially equalize the etching rate of the
insulator layer 10 and the etching rate of the remaining resist remainders 20 a so that no distortions will emerge during formation of the base profile, in particular in the curved portion KB. If a conformal projection is achieved, the angle of inclination α1 of the resist remainder 20 a will be projected directly in the angle of inclination α1 in the slope at the upper end of themetallic coating 30 a in FIG. 3a, or the surface OF of the curved portion KB will have said slope in the laterally outer end portion, respectively. - The structure of FIG. 3b is produced in accordance with the method of production schematically illustrated in FIG. 2b in the same manner, which method is performed analogously to FIG. 2a. Herein, with the same number of process steps, a staggered arrangement of insulator profiles 10 b, 10 c, 10 d was projected from respective resist
remainders - Also in FIG. 2b, the starting point is the plane resist
layer 20, which is illuminated in a structured manner and leaves behind resist remainders, which are conformally projected by means of adry etching process 60 into theinsulator 10, which is selected thinner here, the height of which h10 being in an order of magnitude of less than 5 μm, especially 2 μm, for the staggered arrangement. - Prior to applying the
insulator layer 10, as already explained with regard to FIG. 3b, the potential-transmitting zones or—for a circular design—rings 7 a, 7 b are diffused into an n− substrate 9, wherein said zones are arranged in such a way such that they will be located below that region of theinsulator 10, in which the plane resistlayer 20 is virtually completely removed by developing. - The ratio of the slopes at the upper end of the respective curved portions of the resist
remainders - For a better illustration of the upper end of the curved portion KB, i.e. the transition area between curved portion and base portion, an enlarged cutout of either FIG. 3a or the outer stage of the
field plate 1″ of FIG. 3b is illustrated in FIG. 5. FIG. 5 is divided into a left-hand curved portion KB having a lateral extension b1 and a base portion SB having a lateral extension b2. Thesubstrate 9 is arranged below the insulator profile (consisting of curved portion and base portion). Right-hand of the base portion begins the outer metallic coating MET2 having a thickness dm, left-hand of the base portion at the upper end of the curved portion KB begins the inwards curved inner metallic coating MET1, which is applied to a correspondingly curved surface OF and having a thickness dm. The angle of inclination α at the upper end of the curved portion is illustrated. It corresponds to angle α4 or α1, respectively, with regard to the examples shown in FIG. 3a or 3 b. Height h of the base portion SB corresponds to height h10 of FIGS. 3a, 3 b. - FIG. 4 together with its enlarged cutout shown in FIG. 4a shows an
insulator profile 11, which may be formed in accordance with the flat insulator profile of FIG. 3b, which is, however, not comprised of a plurality of staggered arrangements, but comprises ahood 32 extending above the insulator profile, which hood serves as a screen and includes an outercurved portion 32 a. It is connected to the anode 31 (above the p+ diffusion area 8) in a voltaically conducting manner and runs at first upwards and then laterally outwards with a constant height h41. The region between the lower area of thehood 32 and the insulator profile as well as themetallic coating compound 41, which has an insulating effect. FIG. 4 is not true to scale, it serves instead to describe the structural elements. An exemplary, approx. true to scale embodiment of the arrangement according to FIG. 4 is shown in FIG. 6. - It is the purpose of FIG. 4 and the enlarged cutout shown in FIG. 4a to describe a detail of the inner end of the curved portion KB of the
insulator profile 11. Said inner end, which substantially begins at the outer end of thep+ diffusion zone 8, is provided in the form of astep 11 s, which is formed in an order of magnitude of 20 nm to 30 nm; it may, however, also deviate from said values, but usually has a height of 50 nm, which height is designated “d”. Said step is produced by the method of production according to FIGS. 2a, 2 b and results from the graduation of the gray-tone value of the mask during exposure. The gray-tone value cannot decrease in an infinitely fine manner to zero (permeable mask) so that from a minimum gray-tone value onwards no further graduation is effected and step 11 s is at first produced in the resistremainder 20 a or 20 b, respectively, during exposure and is then transferred into theinsulator 10 bydry etching 60. In the region ofstep 11 s, also the course of themetallic coating 31 towards the continuouslycurved portion 31 b, which is free of steps, includes aslight prominence 31 a, which, however, with a metallization thickness of usually 1 μm, is hardly noticeable compared to the preferred step height “d” being within a range of 50 nm and does not cause peak values in the course of flux lines. - A second detail is only schematically visible in FIG. 4, it is the radius of curvature r=r32 preferably selected here shown as a quarter circle in the
curved portion 32 a of thehood 32. It begins at the distance b10 from the upper end of the curvedmetallic coating 31 b, which distance is considerably larger than illustrated in FIG. 4 and which is shown true to scale in FIG. 6 according to a specific example. In this example, said distance substantially corresponds to the radius of curvature r within thequarter circle 32 a of thehood 32 above the base portion SB of theinsulator 10. - Herein the
insulator 10, according to FIG. 3b, has a flat height h10, which is less than 5 μm and is preferably 2 μm. The radius r, illustrated as r32 in FIG. 4, has dimensions of for example 100 μm and the distance b10, according to FIG. 4, is likewise dimensioned. - In the example according to FIG. 6, in addition to this also the lateral extension of the curved portion KB of the
insulator profile 11 is suitably provided with a width b9, which substantially corresponds to the width b10. The distance between the bottom surface of thehood 32 and thecurved field plate 31 b in the curved portion and thebase portion 10, according to the example, is between 10 μm and 30 μm, represented by h41, as shown in FIG. 4. Said region, as well as the curved portion and the region located laterally further outwards, is filled with a castingcompound 41. It has an insulating effect and forms a mechanical stabilization. - A semiconductor component capable of blocking is an IGBT, a thyristor, a GTO or a diode, especially a Schottky diode. An insulator profile (10 a, 10 b, 10 c, 10 d, 11) is provided in the termination portion of an anode metallic coating (1, 31) and is fixed (directly) on the substrate (9) of the component and having a curved portion (KB) and a base portion (SB), said insulator profile comprising a surface (OF) in the curved portion (KB), which begins flat and is curved outwards and upwards in a steadily increasing manner. A metallic coating (MET1; 30 a, 30 b, 30 c, 30 d, 31 b) is deposited on the surface (OF), which coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The end of the metallic coating (MET1; 30 a, 30 b . . . ) is spaced in an insulating manner by the surrounding base portion (SB) of the insulator profile (10 a, 11) from an outer metallic coating (MET2;3) surrounding said base portion.
- A largely constant course of flux lines avoiding peak values results between both metallic coatings (1, 31, MET1; 3, MET2), when one of a reverse bias voltage and blocking voltage is applied between the spaced metallic coatings.
Claims (14)
1. Semiconductor component capable of blocking, such as an IGBT, a thyristor, a GTO or a diode, especially a Schottky diode, wherein
(a) an insulator profile (10 a, 10 b, 10 c, 10 d, 11) is provided in a termination portion of an anode metallic coating (1, 31) and is fixed (directly in the termination portion) on a substrate (9) of the component and having a curved portion (KB) and a base portion (SB), said insulator profile comprising a surface (OF) in the curved portion (KB), which begins flat and is curved outwards and upwards in a steadily increasing manner;
(b) a metallic coating (MET1; 30 a, 30 b, 30 c, 30 d, 31 b) is deposited on the surface (OF), which coating directly follows the surface curvature and laterally extends the inner anode metallic coating;
(c) to space an upper end of the curved metallic coating (MET1; 30 a, 30 b . . . ) in an insulating manner by the surrounding base portion (SB) of the insulator profile (10 a, . . . , 11) from an outer metallic coating (MET2;3) surrounding said base portion such that a substantially constant course of flux lines avoiding peak values results between both metallic coatings (1, 31, MET1; 3, MET2), when one of reverse bias voltage and blocking voltage is applied between the spaced metallic coatings.
2. Component according to claim 1 , wherein a plurality of insulator profiles (10 b, 10 c, 10 d), especially two or three insulator profiles, each having a curved portion (KB) and base portion (SB), are arranged in a staggered manner around the inner anode metallic coating (1), said plurality of insulator profiles being all fixed on the substrate (9), wherein the curved metallic coating (30 b) of the innermost insulator profile conductingly passes over into the anode metallic coating (1) and the surrounding outer metallic coating (3) of the outermost insulator profile (10 d) is provided as a cathode metallic coating (3) of the component.
3. Component according to claim 2 , wherein the steady course of curvature of the curved metallic coatings (30 b, 30 c, 30 d) is the steeper towards the outside, the further outward the associated insulator profile (10 b, 10 c, 10 d) is located relative to the inner anode metallic coating (1).
4. Component according to claim 1 , wherein only one insulator profile (10 a) surrounds the anode metallic coating (1, 31), said insulator profile (10 a) having a height in the base portion (SB), said height being more than 5 μm, in particular substantially 10 μm, and
the metallic coating (30 a) in the upper portion of the curved portion of the insulator profile is noticeably inclined (more than 10°), in particular between 15° and 20°, relative to a surface of the substrate (9), and
a lateral distance of an upper end of the curved portion (KB) from an inner end of the outer metallic coating (3) is not less than, in particular substantially, ten times the height of the base portion (SB) of the insulator profile (10 a).
5. Component according to claim 1 , wherein only one insulator profile (10 a) surrounds the anode metallic coating (1, 31), said insulator profile (11) being flat in the base portion (SB) and having a height of less than 5 μm, in particular substantially 2 μm, and
an upper portion of the metallic coating (31 b) is slightly curved, especially inclined by a maximum of approx. 10° relative to the surface of the substrate (9), wherein a distance of said upper end of the only slightly curved metallic coating (31 b) from an inner end of the outer metallic coating (3) is more than ten times the height of the base portion (SB), in particular more than fifty times to two-hundred times the height of the base portion (SB),
wherein the anode (31) extends along a curved hood (32, 32 a) running particularly analogously to the curved portion in a continued manner in a distance (h41) above the insulator profile (11), and
an insulating mass (41) is provided between the insulator profile (11) and the hood (32).
6. Semiconductor component capable of blocking according to any one of the previous claims for power electronics; or method for producing a termination portion of said component, wherein the insulator profile (10 a, 10 b) including said curved surface (OF), which is free of steps, is produced or may be produced by gray-tone lithography in the termination portion of an anode (1; 31), wherein
(a) the substrate (9) is covered with an insulating layer (10) having a thickness of in particular between 0.5 μm and 15 μm;
(b) said insulator layer having a thickness is covered with a photosensitive to layer (photoresist layer; 20);
(c) the photoresist layer (20) is exposed through a mask, which changes in its gray-tone value in accordance with the course of curvature of the surface (OF) of at least one insulator profile (10 a, 10 b, 10 c, 10 d), and is subsequently structured to form at least one resist remainder (20 a, 20 b, 20 c, 20 d);
(d) the structured photoresist layer (20 a, 20 b, 20 c, 20 d) and the insulator layer (10) are substantially planely removed by a dry-etching process, in order to transfer the at least one resist remainder—defined by the structuring—by shape into the insulator (10) and to form (10 a, 10 b, 10 c, 10 d) at least one insulator profile around the anode (1; 31).
7. Component according to claim 5 , wherein the curvature (32 a, r) of the hood (32), extending particularly as a quarter circle, is greater or more pronounced than the curvature of the laterally extended metallic coating (31 b).
8. Component according to any one of claims 1 to 4 , wherein a transition (31 a) of the curved metallic coating (31 b) to the anode metallic coating (31) is provided through a small step (d) of the insulator profile at an inner end of the curved portion (KB) of the insulator profile (11), wherein said small step is in an order of magnitude of 5 nm to 30 nm so that the insulator profile does not terminate towards the anode metallic coating (31) completely free of steps.
9. Component or method according to any one of the previous claims, wherein—after metallizing the curved surface (OF) of the insulator profile (10 a)—a wall-like casting compound (40) is deposited around the one or at least one of the plurality of insulator profiles (10 c), which casting compound insulatingly overlaps the metallic coatings (MET1, MET2) on both ends of the insulator profile (10 a).
10. Component according to claim 2 or 3, wherein below each of the plurality of insulator profiles (10 c, 10 d), which are arranged in an outwards staggered manner, a strip-shaped—ring-strip shaped for a circular anode (1)—compensating area is diffused into the substrate (9) as a zone (7 a, 7 b) in order to transfer the potential present at the component at the respective location when a voltage is applied from the substrate area to the respective metallic coating (30 c, 30 d) of the respective insulator profile (10 c, 10 d), wherein the width of the strip is smaller than the width of the respective associated insulator profile and at least slightly overlaps the end of the insulator profile (10 b) located further inwards.
11. Component or method according to claim 6 , wherein the curved surface of the at least one insulator profile is metallized (31), wherein the structuring according to feature (c) is effected prior thereto by developing the exposed photoresist layer (20) and is transferred into the insulator layer (10) according to feature (d).
12. Component according to any one of the previous claims, comprising a substrate (9) made of silicon carbide (SiC), which has a very low diffusion constant for doting substances.
13. Component according to claim 5 , wherein an intermediate region (b10) is formed between the curved portion of the hood (32 a) and the laterally extended, curved metallic coating (31 b), in which intermediate region the hood (32) has a substantially constant distance from the base portion (11, SB).
14. Component according to claim 5 or 13, wherein the base portion (SB) also extends below the curved hood portion (32 a).
Priority Applications (2)
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US10/127,636 US20020140046A1 (en) | 1997-11-24 | 2002-04-22 | Optimized junction termination of semiconductor components |
US10/669,024 US6956249B2 (en) | 1997-11-24 | 2003-09-23 | Termination of semiconductor components |
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DE19752020.0 | 1997-11-24 | ||
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US09/555,040 US6426540B1 (en) | 1997-11-24 | 1998-11-23 | Optimized border of semiconductor components |
US10/127,636 US20020140046A1 (en) | 1997-11-24 | 2002-04-22 | Optimized junction termination of semiconductor components |
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US09555040 Continuation | 1998-11-23 | ||
PCT/DE1998/003453 Continuation WO1999027582A2 (en) | 1997-11-24 | 1998-11-23 | Optimized border of semiconductor components |
US09/555,040 Continuation US6426540B1 (en) | 1997-11-24 | 1998-11-23 | Optimized border of semiconductor components |
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US10/669,024 Continuation US6956249B2 (en) | 1997-11-24 | 2003-09-23 | Termination of semiconductor components |
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US10/127,636 Abandoned US20020140046A1 (en) | 1997-11-24 | 2002-04-22 | Optimized junction termination of semiconductor components |
US10/669,024 Expired - Fee Related US6956249B2 (en) | 1997-11-24 | 2003-09-23 | Termination of semiconductor components |
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US09/555,040 Expired - Fee Related US6426540B1 (en) | 1997-11-24 | 1998-11-23 | Optimized border of semiconductor components |
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EP (1) | EP1036418A2 (en) |
JP (1) | JP2001524756A (en) |
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---|---|---|---|---|
US20060006394A1 (en) * | 2004-05-28 | 2006-01-12 | Caracal, Inc. | Silicon carbide Schottky diodes and fabrication method |
Families Citing this family (7)
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JP2001524756A (en) * | 1997-11-24 | 2001-12-04 | フラウンホーファー−ゲゼルシャフト ツル フェルデング デル アンゲヴァンテン フォルシュング エー.ファー. | Optimized edge termination for semiconductor devices |
US6301051B1 (en) * | 2000-04-05 | 2001-10-09 | Rockwell Technologies, Llc | High fill-factor microlens array and fabrication method |
US7362697B2 (en) | 2003-01-09 | 2008-04-22 | International Business Machines Corporation | Self-healing chip-to-chip interface |
JP5625336B2 (en) * | 2009-11-30 | 2014-11-19 | サンケン電気株式会社 | Semiconductor device |
CN102184947A (en) * | 2011-03-15 | 2011-09-14 | 上海集成电路研发中心有限公司 | High-voltage semiconductor structure and preparation method thereof |
US9196560B2 (en) | 2013-10-31 | 2015-11-24 | Infineon Technologies Austria Ag | Semiconductor device having a locally reinforced metallization structure and method for manufacturing thereof |
CN112701165A (en) * | 2019-10-22 | 2021-04-23 | 珠海格力电器股份有限公司 | Silicon carbide diode and preparation method thereof |
Family Cites Families (10)
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US3706128A (en) * | 1970-06-30 | 1972-12-19 | Varian Associates | Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor |
DE3219606A1 (en) * | 1982-05-25 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | SCHOTTKY PERFORMANCE DIODE |
DE3220250A1 (en) | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | SEMICONDUCTOR COMPONENT WITH PLANAR STRUCTURE |
JPS61181414A (en) | 1985-02-07 | 1986-08-14 | 松下電器産業株式会社 | Electromotive cooker |
EP0237844A1 (en) | 1986-03-18 | 1987-09-23 | BBC Brown Boveri AG | Process for manufacturing a passivation layer for the semiconductor technique, and use of this layer |
JPS6338259A (en) * | 1986-08-01 | 1988-02-18 | Fujitsu Ltd | Semiconductor device |
KR0154702B1 (en) * | 1995-06-09 | 1998-10-15 | 김광호 | Method for manufacturing a diode with the breakdown voltage improved |
DE19535322A1 (en) | 1995-09-22 | 1997-03-27 | Siemens Ag | Arrangement with a pn junction and a measure to reduce the risk of a breakdown of the pn junction |
SE9700156D0 (en) * | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
JP2001524756A (en) * | 1997-11-24 | 2001-12-04 | フラウンホーファー−ゲゼルシャフト ツル フェルデング デル アンゲヴァンテン フォルシュング エー.ファー. | Optimized edge termination for semiconductor devices |
-
1998
- 1998-11-23 JP JP2000522625A patent/JP2001524756A/en not_active Withdrawn
- 1998-11-23 WO PCT/DE1998/003453 patent/WO1999027582A2/en active Application Filing
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060006394A1 (en) * | 2004-05-28 | 2006-01-12 | Caracal, Inc. | Silicon carbide Schottky diodes and fabrication method |
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WO1999027582A2 (en) | 1999-06-03 |
US6426540B1 (en) | 2002-07-30 |
JP2001524756A (en) | 2001-12-04 |
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US20040129993A1 (en) | 2004-07-08 |
DE19881806D2 (en) | 2000-08-24 |
WO1999027582A3 (en) | 1999-07-15 |
US6956249B2 (en) | 2005-10-18 |
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