DE69929755D1 - Klemmschaltung und -verfahren für dynamische Speicher mit wahlfreiem Zugriff - Google Patents

Klemmschaltung und -verfahren für dynamische Speicher mit wahlfreiem Zugriff

Info

Publication number
DE69929755D1
DE69929755D1 DE69929755T DE69929755T DE69929755D1 DE 69929755 D1 DE69929755 D1 DE 69929755D1 DE 69929755 T DE69929755 T DE 69929755T DE 69929755 T DE69929755 T DE 69929755T DE 69929755 D1 DE69929755 D1 DE 69929755D1
Authority
DE
Germany
Prior art keywords
random access
access memory
dynamic random
clamp circuit
clamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69929755T
Other languages
English (en)
Inventor
James Brady
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69929755D1 publication Critical patent/DE69929755D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE69929755T 1998-10-30 1999-10-27 Klemmschaltung und -verfahren für dynamische Speicher mit wahlfreiem Zugriff Expired - Lifetime DE69929755D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/183,054 US5949720A (en) 1998-10-30 1998-10-30 Voltage clamping method and apparatus for dynamic random access memory devices

Publications (1)

Publication Number Publication Date
DE69929755D1 true DE69929755D1 (de) 2006-04-20

Family

ID=22671232

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69929755T Expired - Lifetime DE69929755D1 (de) 1998-10-30 1999-10-27 Klemmschaltung und -verfahren für dynamische Speicher mit wahlfreiem Zugriff

Country Status (4)

Country Link
US (1) US5949720A (de)
EP (1) EP0997911B1 (de)
JP (1) JP2000149563A (de)
DE (1) DE69929755D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031768A (en) * 1998-12-18 2000-02-29 Stmicroelectronics, Inc. Self boosted wordline
US6420908B2 (en) * 1999-01-05 2002-07-16 Infineon Technologies Ag Sense amplifier
US6272054B1 (en) * 2000-10-31 2001-08-07 International Business Machines Corporation Twin-cell memory architecture with shielded bitlines for embedded memory applications
US7324393B2 (en) 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
US6987693B2 (en) 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7327619B2 (en) * 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US7443757B2 (en) * 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
EP1543529B1 (de) * 2002-09-24 2009-11-04 SanDisk Corporation Nichtflüchtiger speicher und ausleseverfahren
US6831866B1 (en) * 2003-08-26 2004-12-14 International Business Machines Corporation Method and apparatus for read bitline clamping for gain cell DRAM devices
US6956770B2 (en) * 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7064980B2 (en) * 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7849381B2 (en) 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7206230B2 (en) * 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7447078B2 (en) * 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7444525B2 (en) * 2005-05-25 2008-10-28 Sony Computer Entertainment Inc. Methods and apparatus for reducing leakage current in a disabled SOI circuit
US7619916B2 (en) * 2006-07-06 2009-11-17 Stmicroelectronics Pvt. Ltd. 8-T SRAM cell circuit, system and method for low leakage current
TWI670711B (zh) * 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58189898A (ja) * 1982-04-30 1983-11-05 Toshiba Corp ダイナミツク記憶装置
JPS6122494A (ja) * 1984-07-10 1986-01-31 Nec Corp アクテイブプルアツプ回路
US4679172A (en) * 1985-05-28 1987-07-07 American Telephone And Telegraph Company, At&T Bell Laboratories Dynamic memory with increased data retention time
KR0154755B1 (ko) * 1995-07-07 1998-12-01 김광호 가변플레이트전압 발생회로를 구비하는 반도체 메모리장치
US5636170A (en) * 1995-11-13 1997-06-03 Micron Technology, Inc. Low voltage dynamic memory
US5673219A (en) * 1996-03-21 1997-09-30 Texas Instruments Incorporated Apparatus and method for reducing leakage current in a dynamic random access memory
US5781497A (en) * 1996-08-02 1998-07-14 Alliance Semiconductor Corp. Random access memory word line select circuit having rapid dynamic deselect

Also Published As

Publication number Publication date
US5949720A (en) 1999-09-07
EP0997911A1 (de) 2000-05-03
EP0997911B1 (de) 2006-02-08
JP2000149563A (ja) 2000-05-30

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